UVC-selective SiC based UV sensor SIC01M-C Features • UVC Photodiode with medium-sized photoactive area • Good compromise between signal strength and price • Silicon Carbide based chip for extreme irradiation hardness • Spectral Response in accordance with DVGW W 294 • TO-39 metal package with 0.5 × 0.5 mm2 SiC chip • The chip is made by Cree Research Inc., U.S.A. • Radiation-hard UVC interference filter is made in Germany Eigenschaften • UVC Photodiode mit mittelgroßer photoaktiver Fläche • Guter Kompromiss zwischen Signalstärke und Preis • Siliziumcarbid-Chip garantiert extreme Strahlungsfestigkeit • Spektrale Empfindlichkeit in Übereinstimmung mit DVGW W 294 • TO-39 Metallgehäuse mit 0.5 × 0.5 mm2 SiC chip • Chiphersteller: Cree Research Inc., U.S.A. • Der strahlungsharte Interferenzfilter wird in Deutschland hergestellt Rev. 1.1 Page 1 [4] UVC-selective SiC based UV sensor SIC01M-C Maximum Ratings Parameter Symbol Value Unit Topt -25 ... +80 °C VRmax 20 V Symbol Value Unit Filter aperture D 3.6 mm Active area A 0.22 mm Dark current at 1 V reverse bias Id 2 fA Capacitance C 80 pF Short circuit current for 2 1 mW/cm @ 254 nm I0 ca. 130 nA Symbol Value Unit Max. spectral sensitivity Smax 0.11 AW Wavelength of max. spectral sensitivity λSmax 270 nm - 230 - 285 nm Operating temperature range Reverse voltage General Characteristics (Ta = 25 °C) Parameter 2 Spectral Characteristics (Ta = 25 °C) Parameter Range of spectral sensitivity (S=0.1*Smax) -1 Linear Spectral Response Rev. 1.1 Page 2 [4] UVC-selective SiC based UV sensor SIC01M-C Logarithmic Spectral Response Rev. 1.1 Page 3 [4] UVC-selective SiC based UV sensor SIC01M-C Application Example Pin Layout Rev. 1.1 Page 4 [4]