AlGaAs Infrared Laser Diode ADL-80V01NL DATE：2006/12/27 Ver 2.0 ★808nm 500mW 9φ TO-Type High Power Laser Diode • Features 1. Low operation current 2. Cost effective • Applications 1. Pumps for solid state lasers 2. Medical use • Absolute maximum ratings Parameter Light output power Reverse voltage (LD) Reverse voltage (PD) Forward current (PD) Case temperature Storage temperature Symbol Condition PO CW VRL VRD IFD TC TS - Rating 500 2 30 10 -10~+50 -40~+85 Unit mW V V mA o C o C • Electrical and optical characteristics (Tc=25 oC) Parameter Symbol λ Min. Typ. Max. Unit 805 808 811 nm Threshold current Operating current Ith Iop - 150 200 mA - 600 700 mA Po=500mW Operating voltage Vop - 1.8 2 V Po=500mW Differential efficiency Monitor current Parallel divergence angle Perpendicular divergence angle Emission point accuracy η 0.8 0.15 -80 1.0 0.8 10 44 1.20 15 48 +80 Peak wavelength * * * * * * Im θ// θ⊥ ΔxΔyΔz Conditions Po=500mW mW/mA Po=400-500mW mA Po=500mW, VRD=0V degree degree Po=500mW um Precautions Do not operate the device above maximum ratings. Doing so may cause unexpected and permanent damage to the device. Take precautions to avoid electrostatic discharge and/or momentary power spikes. A change in the characteristics of the laser or premature failure may result. Proper heat sinking of the device assures stability and lifetime. Always ensure that maximum operating temperatures are not exceeded. Observing visible or invisible laser beams with the human eye directly, or indirectly, can cause permanent damage. Use a camera to observe the laser. No laser device should be used in any application or situation where life or property is at risk in event of device failure. Specifications are subject to change without notice. Ensure that you have the latest specification by contacting us prior to purchase or use of the product. * For reference only. Contents above are subject to change without notice. AlGaAs Infrared Laser Diode ADL-80V01NL DATE：2006/12/27 Ver 2.0 600 2.0 O O 20 C 3040 50 60 70 C 1.9 500 O 20 C O 70 C 1.8 Voltage(V) Power(mW) 400 300 200 1.7 1.6 1.5 100 1.4 0 0 100 200 300 400 500 600 700 800 900 1.3 0 100 200 0.7 260 0.6 240 0.5 220 0.4 200 0.3 160 0.1 140 0.0 100 200 300 400 500 120 20 600 30 600 700 800 900 40 50 60 70 60 70 Temperature( C) 800 828 760 824 720 820 Wavelength(nm) Iop(mA) 500 O Power(mW) 680 640 816 812 808 600 560 20 400 180 0.2 0 300 Current(mA) Ith(mA) Monitor current(mA) Current(mA) 30 40 50 60 70 804 20 O Temperature( C) * For reference only. Contents above are subject to change without notice. 30 40 50 O Temperature( C)