RU80100S

RU80100S
N-Channel Advanced Power MOSFET
Features
Pin Description
• 80V/100A,
RDS (ON) =5.5mΩ (Typ.) @ VGS=10V
• Ultra Low On-Resistance
• Exceptional dv/dt capability
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Available
D
G
S
TO263
D
Applications
• High Current Switching Applications
• Inverter Systems
G
S
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
80
VGSS
Gate-Source Voltage
±25
Maximum Junction Temperature
175
°C
-55 to 175
°C
TC=25°C
100
A
TC=25°C
400
A
TC=25°C
100
TC=100°C
71
TC=25°C
188
TC=100°C
94
TJ
TSTG
IS
V
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
②
Continuous Drain Current(VGS=10V)
IDP
ID
PD
Maximum Power Dissipation
A
W
RθJC
Thermal Resistance-Junction to Case
0.8
°C/W
RθJA
Thermal Resistance-Junction to Ambient
62.5
°C/W
225
mJ
Drain-Source Avalanche Ratings
EAS
③
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
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RU80100S
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
RU80100S
Symbol
Parameter
Test Condition
Unit
Min.
Typ.
Max.
Static Characteristics
BVDSS
IDSS
Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
Zero Gate Voltage Drain Current
80
V
VDS=80V, VGS=0V
1
TJ=125°C
VGS(th)
IGSS
④
RDS(ON)
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±25V, VDS=0V
Drain-Source On-state Resistance VGS=10V, IDS=40A
µA
30
2
3
5.5
4
V
±100
nA
7.5
mΩ
1.2
V
Diode Characteristics
VSD
④
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
ISD=40A, VGS=0V
ISD=40A, dlSD/dt=100A/µs
Reverse Recovery Charge
Dynamic Characteristics
51
ns
96
nC
1.6
Ω
⑤
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V,
VDS=30V,
Frequency=1.0MHz
Crss
Reverse Transfer Capacitance
340
td(ON)
Turn-on Delay Time
15
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
pF
18
42
ns
⑤
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
470
64
Turn-off Fall Time
Gate Charge Characteristics
Qg
VDD=30V, RL=0.8Ω,
IDS=40A, VGEN=10V,
RG=6Ω
3600
78
VDS=64V, VGS=10V,
IDS=40A
15
nC
27
①Pulse width limited by safe operating area.
②Calculated continuous current based on maximum allowable junction temperature. The package
limitation current is 75A.
③Limited by TJmax, IAS =30A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C.
④Pulse test;Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
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RU80100S
Ordering and Marking Information
Device
Marking
Package
RU80100S
RU80100S
TO263
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
Packaging Quantity Reel Size Tape width
Tube
3
50
-
-
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RU80100S
Typical Characteristics
Power Dissipation
200
Drain Current
120
180
100
ID - Drain Current (A)
PD - Power (W)
160
140
80
120
60
100
80
40
60
40
20
20
VGS=10V
0
0
0
25
50
75
100
125
150
25
175
50
10µs
100µs
1ms
10ms
DC
1
0.1
0.01
TC=25°C
0.01
0.1
RDS(ON) - On - Resistance (mΩ)
RDS(ON) limited
ID - Drain Current (A)
10
100
125
150
175
Drain Current
Safe Operation Area
100
75
TJ - Junction Temperature (°C)
TJ - Junction Temperature (°C)
20
IDS=40A
15
10
5
0
1
10
0
100
1
2
3
4
5
6
7
8
9
10
VGS - Gate-Source Voltage (V)
VDS - Drain-Source Voltage (V)
ZthJC - Thermal Response (°C/W)
Thermal Transient Impedance
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
1
0.1
0.01
Single Pulse
RθJC=0.8°C/W
0.001
1E-05
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
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RU80100S
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
20
VGS=8,9,10V
120
6V
90
5V
60
30
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
RDS(ON) - On Resistance (mΩ)
ID - Drain Current (A)
150
15
10
10V
5
0
0
20
40
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
80
100
Source-Drain Diode Forward
100
VGS=10V
IDS=40A
2.0
IS - Source Current (A)
Normalized On Resistance
2.5
60
ID - Drain Current (A)
1.5
1.0
0.5
TJ=25°C
Rds(on)=5.5mΩ
TJ=175°C
10
TJ=25°C
1
0.1
0.0
0.2
-50
-25
0
25
50
75
100
125
150
175
0.4
Capacitance
VGS - Gate-Source Voltage (V)
C - Capacitance (pF)
Frequency=1.0MHz
4000
Ciss
3000
2500
2000
1500
1000
Coss
500
Crss
0
1
1
1.2
1.4
Gate Charge
5000
3500
0.8
VSD - Source-Drain Voltage (V)
TJ - Junction Temperature (°C)
4500
0.6
10
100
10
VDS=64V
IDS=40A
9
8
7
6
5
4
3
2
1
0
0
VDS - Drain-Source Voltage (V)
20
40
60
80
100
QG - Gate Charge (nC)
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
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RU80100S
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
6
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RU80100S
Package Information
TO263
A
E
L3
c1
L2
θ1
A1
H
D
DEP
A2
L1
θ1
b
C
L
b1
θ2
e
θ
θ2
SYMBOL
A
A1
A2
b
b1
c
c1
D
E
e
H
MM
MIN
4.40
0.00
2.59
0.77
1.23
0.34
1.22
8.60
10.00
14.70
NOM
4.55
0.10
2.69
*
*
*
*
8.70
10.13
2.54BSC
15.10
INCH
MAX
4.70
0.25
2.79
0.90
1.36
0.47
1.32
8.80
10.26
15.50
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
MIN
0.173
0.000
0.102
0.030
0.048
0.013
0.048
0.339
0.394
NOM
0.179
0.005
0.106
MAX
0.185
0.010
0.110
0.035
0.054
0.019
0.052
0.346
0.404
0.343
0.399
0.100BSC
0.579 0.594 0.610
7
SYMBOL
L
L3
L1
L4
L2
θ
θ1
θ2
DEP
Φp1
L4
MM
MIN
2.00
1.17
*
NOM
2.30
1.29
*
0.25 BSC
2.50 REF
0°
*
5°
7°
1°
3°
0.05 0.10
1.40 1.50
INCH
MAX
2.60
1.40
1.70
MIN
0.079
0.046
*
8°
9°
5°
0.20
1.60
0°
5°
1°
0.002
0.055
NOM
0.091
0.051
*
0.01 BSC
0.098 REF
*
7°
3°
0.004
0.059
MAX
0.102
0.055
0.067
8°
9°
5°
0.008
0.063
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RU80100S
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
8
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