RU3030M2 N-Channel Advanced Power MOSFET Features Pin Description • 30V/30A, RDS (ON) =10mΩ(Typ.)@VGS=10V RDS (ON) =15mΩ(Typ.)@VGS=4.5V D D D D • Super High Dense Cell Design • Fast Switching Speed • Low gate Charge • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) S G SS PIN1 PIN1 PDFN3333 D Applications • Switching Application Systems G S N-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 30 A TC=25°C 120 A TC=25°C 30 TC=100°C 19 TA=25°C 10.8 TA=70°C 8.7 TC=25°C 29 TC=100°C 12 TA=25°C 3.5 TA=70°C 2.3 TJ TSTG IS V Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP ① 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=10V) ID ② Continuous Drain Current@TA(VGS=10V) ③ Maximum Power Dissipation@TC PD Maximum Power Dissipation@TA Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 ③ 1 A W www.ruichips.com RU3030M2 Parameter Symbol RθJC RθJA ③ Rating Unit Thermal Resistance-Junction to Case 4.2 °C/W Thermal Resistance-Junction to Ambient 35 °C/W 42 mJ Drain-Source Avalanche Ratings EAS ④ Avalanche Energy, Single Pulsed Electrical Characteristics (TC=25°C Unless Otherwise Noted) RU3030M2 Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current 30 V VDS=30V, VGS=0V 1 TJ=125°C VGS(th) IGSS ⑤ RDS(ON) Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance µA 30 1.2 2.5 V ±100 nA VGS=10V, IDS=20A 10 15 mΩ VGS=4.5V, IDS=16A 15 25 mΩ 1.2 V Diode Characteristics VSD ⑤ trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=20A, VGS=0V ISD=20A, dlSD/dt=100A/µs Reverse Recovery Charge Dynamic Characteristics Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=15V, Frequency=1.0MHz Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time 8 nC 1 Ω 670 180 pF 75 5 VDD=15V, RL=0.75Ω, IDS=20A, VGEN=10V, RG=3Ω Turn-off Fall Time Gate Charge Characteristics Qg ns ⑥ RG tf 15 10 ns 15 4 ⑥ Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 12 VDS=24V, VGS=10V, IDS=20A 3 nC 4 2 www.ruichips.com RU3030M2 Notes: ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③When mounted on 1 inch square copper board, t≤10sec. ④Limited by TJmax, IAS =13A, VDD = 24V, RG = 50Ω, Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing. Ordering and Marking Information Device Marking Package RU3030M2 3030 PDFN3333 Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 Packaging Quantity Reel Size Tape width Tape&Reel 3 5000 13'' 12mm www.ruichips.com RU3030M2 Typical Characteristics Power Dissipation 35 30 ID - Drain Current (A) 30 PD - Power (W) Drain Current 35 25 25 20 20 15 15 10 10 5 5 VGS=10V 0 0 0 25 50 75 100 125 150 25 175 50 10µs 100µs 1ms 10ms DC 1 0.1 0.01 TC=25°C 0.01 0.1 125 150 175 100 RDS(ON) - On - Resistance (mΩ) RDS(ON) limited ID - Drain Current (A) 10 100 Drain Current Safe Operation Area 100 75 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) Ids=20A 80 60 40 20 0 1 10 0 100 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 10 1 0.1 Single Pulse RθJC=4.2°C/W 0.01 1E-05 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 4 www.ruichips.com RU3030M2 Typical Characteristics Output Characteristics 150 RDS(ON) - On Resistance (mΩ) 6V ID - Drain Current (A) Drain-Source On Resistance 50 10V 120 5V 90 3V 60 30 2V 0 0 1 2 3 4 40 30 4.5V 20 10 10V 0 5 0 10 20 VDS - Drain-Source Voltage (V) 50 60 Source-Drain Diode Forward 100 VGS=10V ID=20A 2.0 IS - Source Current (A) Normalized On Resistance 40 ID - Drain Current (A) Drain-Source On Resistance 2.5 30 1.5 1.0 0.5 TJ=25°C Rds(on)=10mΩ 10 TJ=150°C 0.1 0.0 0.2 -50 -25 0 25 50 75 100 125 150 0.4 Capacitance VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz 800 Ciss 600 400 Coss Crss 1 0.8 1 1.2 1.4 Gate Charge 1000 0 0.6 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 200 TJ=25°C 1 10 100 10 VDS=24V IDS=20A 9 8 7 6 5 4 3 2 1 0 0 VDS - Drain-Source Voltage (V) 5 10 15 QG - Gate Charge (nC) Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 5 www.ruichips.com RU3030M2 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 6 www.ruichips.com RU3030M2 Package Information PDFN3333 C M D2 D3 D1 D L b H L1 e A E2 θ Land Pattern ( Only for Reference ) 0.60 0.4 0.72 E1 E 0.25 1.98 3.55 0.65 2.80 SYMBOL A b c D D1 D2 D3 E MM MIN 0.70 0.25 0.10 3.25 3.00 1.78 * 3.20 NOM 0.75 0.30 0.15 3.35 3.10 1.88 0.13 3.30 INCH MAX 0.80 0.35 0.25 3.45 3.20 1.98 * 3.40 Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 MIN 0.028 0.010 0.004 0.128 0.118 0.070 * 0.126 NOM 0.030 0.012 0.007 0.132 0.122 0.074 0.005 0.130 MAX 0.031 0.014 0.010 0.136 0.126 0.078 * 0.134 7 SYMBOL E1 E2 e H L L1 θ M MM MIN 3.00 2.39 0.30 0.30 * * * NOM 3.15 2.49 0.65BSC 0.40 0.40 0.13 10° * INCH MAX 3.20 2.59 0.50 0.50 * 12° 0.15 MIN 0.118 0.094 NOM 0.122 0.098 0.026BSC 0.012 0.016 0.012 0.016 * 0.005 * 10° * * MAX 0.126 0.102 0.020 0.020 * 12° 0.006 www.ruichips.com RU3030M2 Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 8 www.ruichips.com