RU40120M

RU40120M
N-Channel Advanced Power MOSFET
Features
Pin Description
• 40V/120A,
RDS (ON) =2.7mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• Fast Switching Speed
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
D D
D D
S G
SS
PIN1
PIN1
PDFN5060
D
Applications
• DC/DC Converters
• Power Supply
G
S
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
40
VGSS
Gate-Source Voltage
±20
Maximum Junction Temperature
150
°C
-55 to 150
°C
TC=25°C
50
A
TC=25°C
480
A
TC=25°C
120
TC=100°C
75
TA=25°C
21
TA=70°C
17
TC=25°C
96
TC=100°C
38
TA=25°C
4.2
TA=70°C
2.7
TJ
TSTG
IS
V
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP
①
300μs Pulse Drain Current Tested
Continuous Drain Current@TC(VGS=10V)
ID
②
Continuous Drain Current@TA(VGS=10V)
③
Maximum Power Dissipation@TC
PD
Maximum Power Dissipation@TA
Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2013
③
1
A
W
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RU40120M
Parameter
Symbol
RθJC
RθJA
③
Rating
Unit
Thermal Resistance-Junction to Case
1.3
°C/W
Thermal Resistance-Junction to Ambient
30
°C/W
400
mJ
Drain-Source Avalanche Ratings
EAS
④
Avalanche Energy, Single Pulsed
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
RU40120M
Symbol
Parameter
Test Condition
Unit
Min.
Typ.
Max.
Static Characteristics
BVDSS
IDSS
Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
Zero Gate Voltage Drain Current
40
V
VDS=40V, VGS=0V
1
TJ=125°C
VGS(th)
IGSS
⑤
RDS(ON)
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±20V, VDS=0V
Drain-Source On-state Resistance VGS=10V, IDS=60A
µA
30
2
2.7
4
V
±100
nA
4.5
mΩ
1.2
V
Diode Characteristics
VSD
⑤
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
ISD=60A, VGS=0V
ISD=60A, dlSD/dt=100A/µs
Reverse Recovery Charge
Dynamic Characteristics
33
ns
30
nC
1.8
Ω
⑥
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V,
VDS=20V,
Frequency=1.0MHz
Crss
Reverse Transfer Capacitance
345
td(ON)
Turn-on Delay Time
36
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
Turn-off Fall Time
Gate Charge Characteristics
Qg
VDD=20V,IDS=60A,
VGEN=10V,RG=4.7Ω
3700
680
205
pF
ns
85
45
⑥
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2013
90
VDS=32V, VGS=10V,
IDS=60A
32
nC
37
2
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RU40120M
Notes:
①Pulse width limited by safe operating area.
②Calculated continuous current based on maximum allowable junction temperature. The
package limitation current is 50A.
③When mounted on 1 inch square copper board, t≤10sec.
④Limited by TJmax, IAS =40A, VDD = 32V, RG = 50Ω, Starting TJ = 25°C.
⑤Pulse test;Pulse width≤300µs, duty cycle≤2%.
⑥Guaranteed by design, not subject to production testing.
Ordering and Marking Information
Device
Marking
Package
RU40120M
RU40120M
PDFN5060
Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2013
Packaging Quantity Reel Size Tape width
Tape&Reel
3
3000
13''
12mm
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RU40120M
Typical Characteristics
Power Dissipation
120
120
ID - Drain Current (A)
100
PD - Power (W)
Drain Current
140
100
80
80
60
60
40
40
20
20
VGS=10V
0
0
0
25
50
75
100
125
150
25
175
50
10
10µs
100µs
1ms
10ms
DC
1
0.1
TC=25°C
0.01
0.1
RDS(ON) - On - Resistance (mΩ)
RDS(ON) limited
ID - Drain Current (A)
100
100
125
150
175
Drain Current
Safe Operation Area
1000
75
TJ - Junction Temperature (°C)
TJ - Junction Temperature (°C)
10
Ids=60A
8
6
4
2
0
1
10
0
100
1
2
3
4
5
6
7
8
9
10
VGS - Gate-Source Voltage (V)
VDS - Drain-Source Voltage (V)
ZthJC - Thermal Response (°C/W)
Thermal Transient Impedance
10
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
1
0.1
Single Pulse
0.01
RθJC=1.3°C/W
0.001
1E-05
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2013
4
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RU40120M
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
10
RDS(ON) - On Resistance (mΩ)
ID - Drain Current (A)
180
10V
150
8V
5V
120
90
3V
60
30
2V
0
0
1
2
3
4
8
6
4
10V
2
0
5
0
30
VDS - Drain-Source Voltage (V)
120
Source-Drain Diode Forward
100
VGS=10V
IDS=60A
2.0
IS - Source Current (A)
Normalized On Resistance
90
ID - Drain Current (A)
Drain-Source On Resistance
2.5
60
1.5
1.0
0.5
TJ=25°C
Rds(on)=2.7mΩ
10
TJ=150°C
0.1
0.0
0.2
-50
-25
0
25
50
75
100
125
150
0.4
Capacitance
VGS - Gate-Source Voltage (V)
C - Capacitance (pF)
Frequency=1.0MHz
4000
3500
Ciss
2500
2000
1500
Coss
1000
500
Crss
0
1
0.8
1
1.2
1.4
Gate Charge
5000
3000
0.6
VSD - Source-Drain Voltage (V)
TJ - Junction Temperature (°C)
4500
TJ=25°C
1
10
100
10
VDS=32V
IDS=60A
9
8
7
6
5
4
3
2
1
0
0
VDS - Drain-Source Voltage (V)
20
40
60
80
100
QG - Gate Charge (nC)
Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2013
5
www.ruichips.com
RU40120M
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2013
6
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RU40120M
Package Information
PDFN5060
D2
0.04REF
H
C
L
K
E
E1
E2
1.20REF
L1
A
L1
e
b
a
Land Pattern
( Only for Reference)
4.32
0.61
1.27
3.91
6.61
3.81
4.52
D1
1.27
4.42
SYMBOL
A
b
c
D1
D2
E
E1
E2
e
H
k
L
L1
a
MM
MIN
0.90
0.33
0.20
4.80
3.61
5.90
5.65
3.38
0.41
1.10
0.51
0.06
0°
Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2013
NOM
1.00
0.42
0.25
4.90
3.79
6.00
5.75
3.58
1.27 BSC
0.51
0.61
0.13
INCH
MAX
1.10
0.51
0.30
5.00
3.96
6.10
5.85
3.78
MIN
0.035
0.013
0.008
0.189
0.142
0.232
0.222
0.133
0.61
0.016
0.043
0.020
0.002
0°
0.71
0.20
12°
7
NOM
0.039
0.017
0.010
0.193
0.149
0.236
0.226
0.141
0.005 BSC
0.020
0.024
0.005
MAX
0.043
0.020
0.012
0.197
0.156
0.240
0.230
0.149
0.024
0.028
0.008
12°
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RU40120M
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2013
8
www.ruichips.com