RU6H2K N-Channel Advanced Power MOSFET Features Pin Description • 600V/2A, RDS (ON) =4000mΩ(Typ.)@VGS=10V • Gate charge minimized • Low Crss( Typ. 5pF) • Extremely high dv/dt capability • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) G D S TO251 Applications • High efficiency switch mode power supplies • Lighting D G S N-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 2 A TC=25°C 8 A TC=25°C 2 TC=100°C 1.2 TC=25°C 56 TC=100°C 22 TJ TSTG IS V Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ② Continuous Drain Current(VGS=10V) IDP ID PD Maximum Power Dissipation A W RθJC Thermal Resistance-Junction to Case 2.2 °C/W RθJA Thermal Resistance-Junction to Ambient 100 °C/W 34 mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013 1 www.ruichips.com RU6H2K Electrical Characteristics (TC=25°C Unless Otherwise Noted) RU6H2K Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current 600 V VDS=600V, VGS=0V 1 TJ=125°C VGS(th) IGSS ④ RDS(ON) Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±30V, VDS=0V Drain-Source On-state Resistance VGS=10V, IDS=1A µA 30 2 3 4000 4 V ±100 nA 5000 mΩ 1.2 V Diode Characteristics VSD ④ trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=2A, VGS=0V ISD=2A, dlSD/dt=100A/µs Reverse Recovery Charge Dynamic Characteristics Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=300V, Frequency=1.0MHz Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time µC 8 Ω 280 pF 45 10 VDD=300V, RL=150Ω, IDS=2A, VGEN=10V, RG=25Ω 25 ns 20 25 ⑤ Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 0.77 5 Turn-off Fall Time Gate Charge Characteristics Qg ns ⑤ RG tf 190 9 VDS=480V, VGS=10V, IDS=2A nC 1.7 4.5 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③Limited by TJmax, IAS =2.6A, VDD = 100V, RG = 50Ω , Starting TJ = 25°C. ④Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013 2 www.ruichips.com ℃ RU6H2K Ordering and Marking Information Device Marking Package RU6H2K RU6H2K TO251 Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013 Packaging Quantity Reel Size Tape width Tube 3 75 - - www.ruichips.com ℃ RU6H2K Typical Characteristics Power Dissipation Drain Current 3 50 ID - Drain Current (A) PD - Power (W) 60 40 30 20 10 2 1 VGS=10V 0 0 0 25 50 75 100 125 150 25 175 50 125 150 175 RDS(ON) - On - Resistance (mΩ) 10000 10µs 100µs 1ms 10ms RDS(ON) limited ID - Drain Current (A) 1 100 Drain Current Safe Operation Area 10 75 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) Ids=1A 8000 6000 4000 DC 0.1 2000 TC=25°C 0.01 0.1 1 0 10 100 0 1000 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 0.1 Single Pulse 0.01 RθJC=2.2°C/W 0.001 1E-05 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013 4 www.ruichips.com ℃ RU6H2K Typical Characteristics Output Characteristics 3 RDS(ON) - On Resistance (mΩ) 8V 10V ID - Drain Current (A) Drain-Source On Resistance 10000 8000 6V 2 6000 5V 10V 4000 1 2000 3V 0 0 2 4 6 8 0 10 0 1 2 VDS - Drain-Source Voltage (V) 5 Source-Drain Diode Forward 10 VGS=10V ID=1A 2.0 IS - Source Current (A) Normalized On Resistance 4 ID - Drain Current (A) Drain-Source On Resistance 2.5 3 1.5 1.0 0.5 TJ=25°C Rds(on)=4000mΩ TJ=150°C 1 TJ=25°C 0.1 0.01 0.0 0.2 -50 -25 0 25 50 75 100 125 150 0.4 Capacitance VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz 400 Ciss 300 200 Coss Crss 1 10 1 1.2 1.4 Gate Charge 500 0 0.8 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 100 0.6 100 1000 10 VDS=480V IDS=2A 9 8 7 6 5 4 3 2 1 0 0 VDS - Drain-Source Voltage (V) 2 4 6 8 10 QG - Gate Charge (nC) Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013 5 www.ruichips.com ℃ RU6H2K Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013 6 www.ruichips.com ℃ RU6H2K Package Information TO251 E b2 A D D1 L2 C1 3Xb 3Xb1 L L1 E1 c 2Xe SYMBOL A A1 b b1 b2 c c1 D D1 E E1 e L L1 L2 A1 INCH MM MIN 2.220 0.890 0.550 0.760 5.200 0.460 0.450 5.950 4.200 6.400 4.750 8.900 1.900 0.900 Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013 NOM 2.320 1.015 0.610 0.860 5.300 0.515 0.500 6.100 4.350 6.550 4.800 2.280 REF 9.200 2.095 0.950 7 MAX 2.420 1.140 0.670 0.960 5.400 0.570 0.550 6.250 4.500 6.700 4.850 MIN 0.087 0.035 0.022 0.030 0.205 0.018 0.018 0.234 0.165 0.252 0.187 9.500 2.290 1.000 0.350 0.075 0.035 NOM 0.091 0.040 0.024 0.034 0.209 0.020 0.020 0.240 0.171 0.258 0.189 0.090 REF 0.362 0.082 0.037 MAX 0.095 0.045 0.026 0.038 0.213 0.022 0.022 0.246 0.177 0.264 0.191 0.374 0.090 0.039 www.ruichips.com ℃ RU6H2K Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013 8 www.ruichips.com