RU3560L N-Channel Advanced Power MOSFET MOSFET Features Pin Description • 40V/50A, RDS (ON) =13mΩ(Typ.)@VGS=10V RDS (ON) =18mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • Fast Switching and Fully Avalanche Rated TO252 • Lead Free and Green Devices Available (RoHS Compliant) Applications • Low Voltage Inverter Applications N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 40 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 50 A TC=25°C 200 TC=25°C TC=100°C 50 40 TC=25°C 50 TC=100°C 25 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD RθJC Maximum Power Dissipation Thermal Resistance-Junction to Case ① A ② A W 3 °C/W 100 mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Copyright Ruichips Semiconductor Co., Ltd Rev. D– SEP., 2012 www.ruichips.com RU3560L Electrical Characteristics Symbol (TA=25°C Unless Otherwise Noted) Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) Zero Gate Voltage Drain Current Test Condition VGS=0V, IDS=250µA Min. Typ. 1 Gate Leakage Current VGS=±20V, VDS=0V 30 1.5 Unit V TJ=85°C VDS=VGS, IDS=250µA Max. 40 VDS= 40V, VGS=0V Gate Threshold Voltage ④ RU3560L 2 µA 2.5 V ±100 nA VGS= 10V, IDS=25A 13 18 mΩ VGS= 4.5V, IDS=20A 18 28 mΩ 1.2 V Drain-Source On-state Resistance Diode Characteristics VSD ④ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=25A, VGS=0V 14 ns 32 nC VGS=0V,VDS=0V,F=1MHz 1.2 Ω VGS=0V, VDS=20V, Frequency=1.0MHz 980 ISD=25A, dlSD/dt=100A/µs ⑤ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf pF 160 80 6 VDD=20V, RL=15Ω, IDS=25A, VGEN= 10V, RG=6Ω Turn-off Fall Time 10 ns 24 5 ⑤ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 18 VDS=20V, VGS= 10V, IDS=25A 2.5 23 nC 5 Pulse width limited by safe operating area. Calculated continuous current based on maximum allowable junction temperature. Current limited by bond wire. Limited by TJmax, IAS =20A, VDD = 30V, RG = 50Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. D– SEP., 2012 2 www.ruichips.com RU3560L Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. D– SEP., 2012 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU3560L Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage RDS(ON) - On - Resistance (m) Normalized Threshold Voltage Drain-Source On Resistance VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. D– SEP., 2012 Tj - Junction Temperature (°C) 4 www.ruichips.com RU3560L Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. D– SEP., 2012 QG - Gate Charge (nC) 5 www.ruichips.com RU3560L Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. D– SEP., 2012 6 www.ruichips.com RU3560L Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU3560L RU3560L TO-252 Tape&Reel 2500 13’’ 16mm Copyright Ruichips Semiconductor Co., Ltd Rev. D– SEP., 2012 7 www.ruichips.com RU3560L Package Information TO252-2L SYMBOL MM INCH MM SYMBOL MIN MAX MIN MAX A 2.200 2.400 0.087 0.094 L A1 0.000 0.127 0.000 0.005 L1 INCH MIN MAX MIN MAX 9.800 10.400 0.386 0.409 2.900 REF. b 0.660 0.860 0.026 0.034 L2 C 0.460 0.580 0.018 0.023 L3 D 6.500 6.700 0.256 0.264 L4 0.600 1.000 0.024 0.039 D1 5.100 5.460 0.201 0.215 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° 0.000 0.300 0.000 0.012 D2 4.830 REF. 0.190 REF. E 6.000 6.200 0.236 0.244 h e 2.186 2.386 0.086 0.094 V 1.400 1.700 0.114 REF. 1.600 REF. 5.350 REF. 0.055 0.067 0.063REF. 0.211 REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. D– SEP., 2012 8 www.ruichips.com RU3560L Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. D– SEP., 2012 9 www.ruichips.com