RU16P8M4 P-Channel Advanced Power MOSFET Features Pin Description • -16V/-8A, RDS (ON) =40mΩ(Typ.)@VGS=-4.5V RDS (ON) =65mΩ(Typ.)@VGS=-2.5V G • Super High Dense Cell Design • Fast Switching Speed • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) S D D S D D D PIN1 SDFN2020 D Applications • Load Swtich • Battery Charge • DC/DC Converters G S P-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage -16 VGSS Gate-Source Voltage ±12 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C -14 A TC=25°C -56 A TC=25°C -14 TC=100°C -9 TA=25°C -8 TA=70°C -5.6 TC=25°C 17.8 TC=100°C 7.1 TA=25°C 2.5 TA=70°C 1.6 TJ TSTG IS V Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP ① 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=-4.5V) ID ② Continuous Drain Current@TA(VGS=-4.5V) ③ Maximum Power Dissipation@TC PD Maximum Power Dissipation@TA Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 ③ 1 A W www.ruichips.com RU16P8M4 Parameter Symbol RθJC RθJA ③ Rating Unit Thermal Resistance-Junction to Case 7 °C/W Thermal Resistance-Junction to Ambient 50 °C/W TBD mJ Drain-Source Avalanche Ratings EAS ④ Avalanche Energy, Single Pulsed Electrical Characteristics (TC=25°C Unless Otherwise Noted) RU16P8M4 Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA Zero Gate Voltage Drain Current -16 V VDS=-16V, VGS=0V -1 TJ=125°C VGS(th) IGSS ⑤ RDS(ON) Gate Threshold Voltage VDS=VGS, IDS=-250µA Gate Leakage Current VGS=±12V, VDS=0V Drain-Source On-state Resistance µA -30 -0.4 -1.1 V ±100 nA VGS=-4.5V, IDS=-4A 40 50 mΩ VGS=-2.5V, IDS=-3A 65 80 mΩ -1.2 V Diode Characteristics VSD ⑤ trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=-1A, VGS=0V ISD=-4A, dlSD/dt=100A/µs Reverse Recovery Charge Dynamic Characteristics 8 ns 3 nC Ω ⑥ RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 0.6 Ciss Input Capacitance 500 Coss Output Capacitance VGS=0V, VDS=-8V, Frequency=1.0MHz Crss Reverse Transfer Capacitance 45 td(ON) Turn-on Delay Time 5 tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Gate Charge Characteristics Qg VDD=-8V,IDS=-4A, VGEN=-4.5V,RG=6Ω 90 10 pF ns 21 9 ⑥ Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 8 VDS=-12V, VGS=-4.5V, IDS=-4A 1.3 nC 2.5 2 www.ruichips.com RU16P8M4 Notes: ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③When mounted on 1 inch square copper board, t≤10sec. ④Limited by TJmax, Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing. Ordering and Marking Information Device Marking Package RU16P8M4 16P8 SDFN2020 Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 Packaging Quantity Reel Size Tape width Tape&Reel 3 3000 7'' 8mm www.ruichips.com RU16P8M4 Typical Characteristics Power Dissipation 20 18 14 16 -ID - Drain Current (A) PD - Power (W) Drain Current 16 12 14 10 12 10 8 6 4 2 8 6 4 2 VGS=-4.5V 0 0 0 25 50 75 100 125 150 25 175 50 150 175 RDS(ON) - On - Resistance (mΩ) 300 10µs 100µs 1ms 10ms DC 1 Ids=-4A 200 150 100 0.1 0.01 125 250 RDS(ON) limited -ID - Drain Current (A) 10 100 Drain Current Safe Operation Area 100 75 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) TC=25°C 0.01 0.1 50 0 1 10 0 100 1 2 3 4 5 6 7 8 9 10 -VGS - Gate-Source Voltage (V) -VDS - Drain-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 10 1 Single Pulse 0.1 RθJC=7°C/W 0.01 1E-05 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 4 www.ruichips.com RU16P8M4 Typical Characteristics Output Characteristics 50 RDS(ON) - On Resistance (mΩ) -3V -ID - Drain Current (A) Drain-Source On Resistance 200 -4.5V 40 150 -2.5V 30 100 -2V 20 10 -1V 0 0 1 2 3 4 -2.5V 50 -4.5V 0 5 0 2 4 -VDS - Drain-Source Voltage (V) 10 Source-Drain Diode Forward 100 VGS=-4.5V IDS=-4A 2.0 -IS - Source Current (A) Normalized On Resistance 8 -ID - Drain Current (A) Drain-Source On Resistance 2.5 6 1.5 1.0 0.5 TJ=25°C Rds(on)=40mΩ 10 TJ=150°C 1 TJ=25°C 0.1 0.0 0.2 -50 -25 0 25 50 75 100 125 150 0.4 Capacitance -VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz 600 Ciss Coss Crss 0 1 1 1.2 1.4 Gate Charge 800 200 0.8 -VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 400 0.6 10 100 -VDS - Drain-Source Voltage (V) 10 VDS=-12V IDS=-4A 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 QG - Gate Charge (nC) Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 5 www.ruichips.com RU16P8M4 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 6 www.ruichips.com RU16P8M4 Package Information SDFN2020 D e N5 N6 E E2 E1 k L N4 D2 N3 D1 N2 b N1 A A3 A1 Land Pattern (Only for Reference) SYMBOL A A1 A3 D E D1 E1 D2 E2 K b e L MM MIN 0.700 0.000 1.924 1.924 0.800 0.850 0.200 0.460 0.250 0.174 Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 NOM 0.750 0.025 0.203 REF. 2.000 2.000 0.900 0.950 0.300 0.560 0.200 MIN. 0.300 0.650 TYP 0.250 INCH MAX 0.800 0.050 MIN 0.028 0.000 2.076 2.076 1.000 1.050 0.400 0.660 0.076 0.076 0.031 0.033 0.008 0.018 0.350 0.010 0.326 0.007 7 NOM 0.030 0.001 0.008 REF. 0.079 0.079 0.035 0.037 0.012 0.022 0.008 MIN. 0.012 0.026 TYP 0.010 MAX 0.031 0.002 0.082 0.082 0.039 0.041 0.016 0.026 0.014 0.013 www.ruichips.com RU16P8M4 Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 8 www.ruichips.com