RU3568L N-Channel Advanced Power MOSFET Features Pin Description • 30V/60A, RDS (ON) =6mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VGS=4.5V D • Super High Dense Cell Design • Reliable and Rugged • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) G S TO252 Applications D • DC/DC Converters G S N-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 60 A TC=25°C 240 A TC=25°C 60 TC=100°C 48 TC=25°C 60 TC=100°C 30 TJ TSTG IS V Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ② Continuous Drain Current(VGS=10V) IDP ID PD Maximum Power Dissipation A W RθJC Thermal Resistance-Junction to Case 2.5 °C/W RθJA Thermal Resistance-Junction to Ambient 100 °C/W 132 mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2013 1 www.ruichips.com RU3568L Electrical Characteristics (TC=25°C Unless Otherwise Noted) RU3568L Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current 30 V VDS=30V, VGS=0V 1 TJ=125°C VGS(th) IGSS ④ RDS(ON) Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance µA 30 1 2.5 V ±100 nA VGS=10V, IDS=30A 6 7.5 mΩ VGS=4.5V, IDS=25A 10 13 mΩ 1.2 V Diode Characteristics VSD ④ trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=30A, VGS=0V ISD=30A, dlSD/dt=100A/µs Reverse Recovery Charge Dynamic Characteristics Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=15V, Frequency=1.0MHz Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time nC 1.4 Ω 1160 210 pF 9 VDD=15V, RL=0.5Ω, IDS=30A, VGEN=10V, RG=6Ω 13 ns 28 10 ⑤ Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 20 140 Turn-off Fall Time Gate Charge Characteristics Qg ns ⑤ RG tf 14 22 VDS=24V, VGS=10V, IDS=30A 4 nC 7 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. Current limited by bond wire. ③Limited by TJmax, IAS =23A, VDD =25V, RG = 50Ω , Starting TJ = 25°C. ④Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2013 2 www.ruichips.com ℃ RU3568L Ordering and Marking Information Device Marking Package RU3568L RU3568L TO252 Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2013 Packaging Quantity Reel Size Tape width Tape&Reel 3 2500 13'' 16mm www.ruichips.com ℃ RU3568L Typical Characteristics Power Dissipation 70 60 ID - Drain Current (A) 60 PD - Power (W) Drain Current 70 50 50 40 40 30 30 20 20 10 10 VGS=10V 0 0 0 25 50 75 100 125 150 25 175 50 10µs 100µs 1ms 10ms 10 DC 1 TC=25°C 0.1 0.1 1 RDS(ON) - On - Resistance (mΩ) RDS(ON) limited ID - Drain Current (A) 100 100 125 150 175 Drain Current Safe Operation Area 1000 75 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) 30 Ids=30A 25 20 15 10 5 0 10 0 100 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 10 1 0.1 Single Pulse RθJC=2.5°C/W 0.01 1E-05 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2013 4 www.ruichips.com ℃ RU3568L Typical Characteristics Output Characteristics Drain-Source On Resistance 30 10V RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) 200 6V 160 4.5V 120 3V 80 40 1V 0 0 1 2 3 4 25 20 15 10 5 10V 0 5 0 20 40 VDS - Drain-Source Voltage (V) 100 120 Source-Drain Diode Forward 100 VGS=10V ID=30A 2.0 IS - Source Current (A) Normalized On Resistance 80 ID - Drain Current (A) Drain-Source On Resistance 2.5 60 1.5 1.0 0.5 TJ=25°C Rds(on)=6mΩ TJ=150°C 10 TJ=25°C 1 0.1 0.0 0.2 -50 -25 0 25 50 75 100 125 150 0.4 Capacitance VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz 1600 Ciss 1200 1000 800 600 400 Coss 200 Crss 0 1 1 1.2 1.4 Gate Charge 2000 1400 0.8 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 1800 0.6 10 100 10 VDS=24V IDS=30A 9 8 7 6 5 4 3 2 1 0 0 VDS - Drain-Source Voltage (V) 5 10 15 20 25 QG - Gate Charge (nC) Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2013 5 www.ruichips.com ℃ RU3568L Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2013 6 www.ruichips.com ℃ RU3568L Package Information TO252 E b3 L3 C D1 θ1 H D A1 E1 θ1 θ L L4 L1 θ1 e L2 b A θ2 MM SYMBOL A A1 b b3 c D D1 E E1 e H L L1 L2 L3 L4 θ θ1 θ2 MIN 2.200 0.000 0.720 5.230 0.470 6.000 6.500 4.700 9.900 1.400 0.900 0.600 0° 5° 5° Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2013 INCH NOM 2.290 0.785 5.345 0.525 6.100 5.30 REF 6.600 4.810 2.28 REF 10.100 1.550 2.743 REF 0.510 BSC 1.075 0.800 7° 7° 7 MAX 2.380 0.100 0.850 5.460 0.580 6.200 MIN 0.087 0.000 0.028 0.206 0.019 0.236 6.700 4.920 0.256 0.185 10.300 1.700 0.390 0.055 1.250 1.000 8° 9° 9° 0.035 0.024 0° 5° 5° NOM 0.090 0.031 0.210 0.021 0.240 0.20 REF 0.260 0.189 0.09 REF 0.398 0.061 0.108 REF 0.020 BSC 0.042 0.031 7° 7° MAX 0.094 0.004 0.033 0.215 0.023 0.244 0.264 0.194 0.406 0.067 0.049 0.039 8° 9° 9° www.ruichips.com ℃ RU3568L Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2013 8 www.ruichips.com