RU3710R N-Channel Advanced Power MOSFET Features Pin Description • 100V/60A RDS (ON)=14mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching and Fully Avalanche Rated TO-220 • 100% avalanche tested • Lead Free and Green Available Applications ·Switching Application Systems Absolute Maximum Ratings Symbol N-Channel MOSFET Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current TC=25°C ① 60 V A Mounted on Large Heat Sink IDP 300µs Pulsed Drain Current Tested TC=25°C TC=25°C ID Continue Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance -Junction to Case ② 240 ① 60 TC=100°C 55 TC=25°C 176 TC=100°C 88 A W 0.85 °C/W 342 mJ Drain-Source Avalanche Ratings ③ EAS Avalanche Energy ,Single Pulsed Copyright Ruichips Semiconductor Co., Ltd Rev. D –NOV., 2012 www.ruichips.com RU3710R Electrical Characteristics (TA=25°C Unless Otherwise Noted) RU3710R Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current 100 V VDS= 100V, VGS=0V 1 TJ=85°C VGS(th) IGSS RDS(ON) VGS=0V, IDS=250µA ④ Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±25V, VDS=0V Drain-Source On-state Resistance VGS= 10V, IDS=40A µA 30 2 3 14 4 V ±100 nA 16 mΩ 1.2 V Diode Characteristics ④ VSD trr Diode Forward Voltage ISD=40A, VGS=0V Reverse Recovery Time 90 ns 180 nC 1.5 Ω ISD=40A, dlSD/dt=100A/µs qrr Reverse Recovery Charge Dynamic Characteristics ⑤ RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V,VDS=0V,F=1MHz 3600 510 pF 210 13 VDD=50V, RL=1.7Ω, IDS= 30A, VGEN= 10V, RG=6Ω Turn-off Fall Time Gate Charge Characteristics 25 ns 72 80 ⑤ Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: VGS=0V, VDS= 30V, Frequency=1.0MHz 85 VDS=80V, VGS= 10V, IDS=60A 20 nC 30 ①Calculated continuous current based on maximum allowable junction temperature. ②Pulse width limited by safe operating area. ③Limited by TJmax, IAS =37A, VDD =60V, RG = 50Ω , Starting TJ = 25°C. ④Pulse test ; Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. D –NOV., 2012 2 www.ruichips.com RU3710R Typical Characteristics Drain Current Ptot-Power(W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. D –NOV., 2012 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU3710R Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage VGS - Gate-Source Voltage (V) RDS(ON) - On - Resistance (mW) Drain-Source On Resistance VGS - Gate - Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. D –NOV., 2012 Tj - Junction Temperature (°C) 4 www.ruichips.com RU3710R Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. D –NOV., 2012 QG - Gate Charge (nC) 5 www.ruichips.com RU3710R Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. D –NOV., 2012 6 www.ruichips.com RU3710R Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU3710R RU3710R TO-220 Tube 50 - - Copyright Ruichips Semiconductor Co., Ltd Rev. D –NOV., 2012 7 www.ruichips.com RU3710R Package Information TO-220FB-3L SYMBOL A MM MM INCH MIN NOM MAX MIN NOM MAX 4.40 4.57 4.70 0.173 0.180 0.185 SYMBOL Øp1 INCH MIN NOM MAX MIN NOM MAX 1.40 1.50 1.60 0.055 0.059 0.063 A1 1.27 1.30 1.33 0.050 0.051 0.052 e 2.54BSC 0.1BSC A2 2.35 2.40 2.50 0.093 0.094 0.098 e1 5.08BSC 0.2BSC b 0.77 - 0.90 0.030 - 0.035 H1 6.40 6.50 6.60 0.252 0.256 0.260 b2 1.23 - 1.36 0.048 - 0.054 L 12.75 - 13.17 0.502 - 0.519 - - 3.95 - - 0.156 C 0.48 0.50 0.52 0.019 0.020 0.021 L1 D 15.40 15.60 15.80 0.606 0.614 0.622 L2 D1 9.00 9.10 9.20 0.354 0.358 0.362 Øp 3.57 3.60 3.63 0.141 0.142 0.143 DEP 0.05 0.10 0.20 0.002 0.004 0.008 Q 2.73 2.80 2.87 0.107 0.110 0.113 E 9.70 9.90 10.10 0.382 0.389 0.398 θ1 5° 7° 9° 5° 7° 9° θ2 1° 3° 5° 1° 3° 5° E1 - 8.70 - - 0.343 - E2 9.80 10.00 10.20 0.386 0.394 0.401 2.50REF. 0.098REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. D –NOV., 2012 8 www.ruichips.com RU3710R Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. D –NOV., 2012 9 www.ruichips.com