RU140N10R N-Channel Advanced Power MOSFET Features Pin Description • 100V/140A RDS (ON)=6.5mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • Low Gate Charge • Fast Switching and Fully Avalanche Rated TO-220 • 100% avalanche tested Applications ·Switching applications N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current TC=25°C ① 140 V A Mounted on Large Heat Sink IDP 300µs Pulsed Drain Current Tested TC=25°C TC=25°C ID PD RθJC Continue Drain Current Maximum Power Dissipation Thermal Resistance -Junction to Case TC=100°C TC=25°C TC=100°C ② 560 ① 140 A ① 100 250 W 125 0.6 °C/W 1.1 J Drain-Source Avalanche Ratings ③ EAS Avalanche Energy ,Single Pulsed Copyright Ruichips Semiconductor Co., Ltd Rev. B –NOV., 2012 www.ruichips.com RU140N10R Electrical Characteristics (TA=25°C Unless Otherwise Noted) RU140N10R Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current 100 V VDS= 100V, VGS=0V 1 TJ=85°C VGS(th) IGSS RDS(ON) VGS=0V, IDS=250µA ④ Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±25V, VDS=0V Drain-Source On-state Resistance VGS= 10V, IDS=40A µA 30 2 3 6.5 4 V ±100 nA 8 mΩ 1.2 V Diode Characteristics ④ VSD Diode Forward Voltage ISD=40 A, VGS=0V Reverse Recovery Time trr 90 ns 200 nC 1.6 Ω ISD=40A, dlSD/dt=100A/µs Reverse Recovery Charge qrr Dynamic Characteristics ⑤ RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V,VDS=0V,F=1MHz 7550 810 pF 250 30 VDD=50V,IDS= 70A, VGEN= 10V,RG=2.5Ω Turn-off Fall Time Gate Charge Characteristics 210 ns 160 120 ⑤ Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: VGS=0V, VDS= 25V, Frequency=1.0MHz 135 VDS=80V, VGS= 10V, IDS=70A 30 nC 45 ①Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ②Pulse width limited by safe operating area. ③Limited by TJmax,IAS =55A, VDD = 50V, RG = 47Ω , Starting TJ = 25°C. ④Pulse test ; Pulse width≤400µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. B –NOV., 2012 2 www.ruichips.com RU140N10R Typical Characteristics Drain Current Ptot-Power(W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Thermal Transient Impedance ID - Drain Current (A) Normalized Effective Transient Safe Operation Area VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B –NOV., 2012 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU140N10R Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Normalized Gate Threshold Voltage RDS(ON) - On - Resistance (mΩ) Normalized Gate-Source Voltage (V) Drain-Source On Resistance VGS - Gate - Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B –NOV., 2012 Tj - Junction Temperature (°C) 4 www.ruichips.com RU140N10R Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B –NOV., 2012 QG - Gate Charge (nC) 5 www.ruichips.com RU140N10R Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. B –NOV., 2012 6 www.ruichips.com RU140N10R Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU140N10R RU140N10R TO-220 Tube 50 - - Copyright Ruichips Semiconductor Co., Ltd Rev. B –NOV., 2012 7 www.ruichips.com RU140N10R Package Information TO-220FB-3L SYMBOL A MM MM INCH MIN NOM MAX MIN NOM MAX 4.40 4.57 4.70 0.173 0.180 0.185 SYMBOL Øp1 INCH MIN NOM MAX MIN NOM MAX 1.40 1.50 1.60 0.055 0.059 0.063 A1 1.27 1.30 1.33 0.050 0.051 0.052 e 2.54BSC 0.1BSC A2 2.35 2.40 2.50 0.093 0.094 0.098 e1 5.08BSC 0.2BSC b 0.77 - 0.90 0.030 - 0.035 H1 6.40 6.50 6.60 0.252 0.256 0.260 b2 1.23 - 1.36 0.048 - 0.054 L 12.75 - 13.17 0.502 - 0.519 - - 3.95 - - 0.156 C 0.48 0.50 0.52 0.019 0.020 0.021 L1 D 15.40 15.60 15.80 0.606 0.614 0.622 L2 D1 9.00 9.10 9.20 0.354 0.358 0.362 Øp 3.57 3.60 3.63 0.141 0.142 0.143 DEP 0.05 0.10 0.20 0.002 0.004 0.008 Q 2.73 2.80 2.87 0.107 0.110 0.113 E 9.70 9.90 10.10 0.382 0.389 0.398 θ1 5° 7° 9° 5° 7° 9° θ2 1° 3° 5° 1° 3° 5° E1 - 8.70 - - 0.343 - E2 9.80 10.00 10.20 0.386 0.394 0.401 2.50REF. 0.098REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. B –NOV., 2012 8 www.ruichips.com RU140N10R Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. B –NOV., 2012 9 www.ruichips.com