Intelligent Power Modules

Power Devices
Intelligent Power Modules
CONTENTS
■IGBT-IPM
・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・
・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・
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P. B12
B
Intelligent Power Modules
■MOS-IPM
P. B12
Power Devices
Intelligent Power Modules
▶ Intelligent Power Modules
Intelligent Power Modules
●Quick Reference for Intelligent Power Modules
IGBT-IPM
Low Speed Switching Type
less than 6kHz
VDSS / VCES
(V)
MOS-IPM
High Speed Switching Type
less than 20kHz
ID / IC
(A)
HSDIP25
600
HSDIP25-VC
10
☆BM63363S-VA
☆BM63763S-VA
−
15
☆BM63364S-VA
☆BM63364S-VC
☆BM63764S-VA
☆BM65364S-VA
20
−
BM63165S-VA
−
☆:Under development
Intelligent Power Modules
IGBT-IPM
Part no.
Power Device
VCES
(V)
IC
(A)
Vce(sat)
(V)
Recomended Switching
Frequency (kHz)
Isolation Voltage *
(Vrms)
Package
BM63165S-VA
IGBT
600
20
1.6
less than 20
1500
☆BM63363S-VA
IGBT
600
10
1.5
less than 6
1500
HSDIP25
☆BM63763S-VA
IGBT
600
10
1.7
less than 20
1500
HSDIP25
☆BM63364S-VA
IGBT
600
15
1.5
less than 6
1500
HSDIP25
☆BM63364S-VC
IGBT
600
15
1.5
less than 6
1500
HSDIP25VC
☆BM63764S-VA
IGBT
600
15
1.7
less than 20
1500
HSDIP25
Power Device
VCES
(V)
IC
(A)
Ron
(mΩ)
Recomended Switching
Frequency (kHz)
Isolation Voltage *
(Vrms)
MOSFET
600
15
120
less than 20
1500
HSDIP25
MOS-IPM
Part no.
☆BM65364S-VA
Package
HSDIP25
*:AC 60Hz, 1 minutes, Corresponds to isolation voltage 2500Vrms in the case the convex-shaped heat sink.
☆:Under development
●Block Diagram
IGBT-IPM
VBU 2
Bootstrap Diode
B
VBV 3
VBW 4
・Fast Recovery Diodes
High Side
Gate Driver
(HVIC)
24 P
HVIC ( High-side Gate Driver )
23 U
・Current limiter function for bootstrap diode
・UVLO for floating supply
22 V
HINV 6
HINW 7
Inverter Part (IGBT and FWD)
21 W
HVCC 8
LVIC( Low-side Gate Driver)
GND 9
・Low Loss Field Stop Trench IGBTs
LINU 10
・UVLO, SCP, TSD
LINV 11
20 NU
・Ultra Low VF Fast Recovery Diodes
LINW 12
・Fault signal output
LVCC 13
Low Side
Gate Driver
(LVIC)
FO 14
19 NV
Protect Circuit
UVLO : Under Voltage Lock Out
SCP : Short Circuit Protection
TSD : Thermal Shut Down
CIN 15
GND 16
18 NW
●Packages
14×2.54(=35.56)
0.42
(3.3)
0.42
HEAT SINK SIDE
1.5MIN
0.5
0.5
0.5
(1.2)
(2.656)
(1.2)
(2.756)
HEAT SINK SIDE
DETAIL B
DETAIL A
B M 6 3 3 6 4 S
Package
S
B12
(3.5)
14×2.54(=35.56)
0.5
●Part No. Explanation
Part No.
33.7±0.5
8−0.6
HSDIP25
HSDIP25VC
-xx
Packaging and forming specification
VA
VC
(1.2)
(2.656)
5.5±0.5
HEAT SINK SIDE
0.8
2.5MIN
0.5
0.5
(0∼5°
)
0.5
14±0.5
0.5
0.28
2.54±0.2
4−C1.2
Tube, Long pin type (HSDIP25)
Tube, Staggered type (control side)(HSDIP25VC)
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(0∼5°
)
(0∼5°
)
1.5MIN
Type name
Lot No.
3MIN
1.5±0.05
B
0.42
HEAT SINK SIDE
24±0.5
0.8
2−R1.6
Specular surface
finish
29.2±0.5
14.4±0.5 18.9±0.5
14.4±0.5
0.28
2.54±0.2
3.5±0.25
16−0.5
8.0
0.42
4−C1.2
8−0.6
A
35.0±0.3
9.5±0.5
Specular surface
finish
0.28
1.778±0.2
5.5±0.5
Type name
Lot No.
3MIN
B
8.0
24±0.5
8
2−R1.6
1.5±0.05
20×1.778(=35.56)
(3.3)
1.778±0.2
16−0.5
(3.5)
0.28
3.8±0.5
3.5±0.25
0.42
35±0.3
HSDIP25VC
A
29.4±0.5
3.8±0.5
20×1.778(=35.56)
14.4±0.5 14.4±0.5
HSDIP25
8
Intelligent Power Modules
HINU 5
(1.2)
(2.756)
DETAIL A
DETAIL B