TDZ22 : Diodes

Zener Diode
TDZ series
Datasheet
lDimensions (Unit : mm)
lApplication
lLand size figure (Unit : mm)
Constant voltage control
1.1
0.17±0.1
0.05
2.0
1.3±0.05
lFeatures
3) Can be mounted automatically,
0.8 0.5
2) High reliability.
2.5±0.2
1.9±0.1
1) Small mold type. (TUMD2)
TUMD2
using chip mounter.
lStructure
Cathode
0.8±0.05
0.6±0.2
0.1
ROHM : TUMD2
dot (year week factory) + day
lConstruction
Silicon epitaxial planar
Anode
EX. TDZ5.1B
lTaping specifications (Unit : mm)
0.25±0.05
8.0±0.2
2.75
1.43±0.05
4.0±0.1
φ 1.0±0.2
1.0
 0.2
0
0
2.8±0.05
φ1.55
1.55±0.1
 0.1
0 0
1.75±0.1
2.0±0.05
3.5±0.05
4.0±0.1
0.9±0.08
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Power dissipation
P
500
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 to +150
°C
Operating resistance
Topr
-55 to +150
°C
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1/6
2013.11 - Rev.D
Data Sheet
TDZ series
lElectrical characteristics (Ta= 25°C)
Symbol
Reverse current
:
IR(mA)
IZ(mA)
VR(V)
MIN.
MAX.
MAX.
TDZ 5.1
4.60
5.60
10
10
1.5
TDZ 5.6
5.10
6.10
10
10
2.5
TDZ 6.2
10
10
5.60
6.80
3.0
TDZ 6.8
10
10
6.20
7.40
3.5
TDZ 7.5
10
10
6.80
8.30
4.5
TDZ 8.2
10
10
7.40
9.00
4.9
TDZ 9.1
10
10
8.20
10.00
5.5
TDZ 10
10
10
9.00
11.00
6.0
TDZ 11
10
10
9.90
12.10
7.0
TDZ 12
10
10
10.80
13.20
8.0
TDZ 13
10
10
11.70
14.30
9.0
TDZ 15
10
10
13.50
16.50
10.0
TDZ 16
10
10
14.40
17.60
11.0
TDZ 18
10
10
16.20
19.80
12.0
TDZ 20
10
10
18.00
22.00
14.0
TDZ 22
10
10
19.80
24.20
15.0
TDZ 24
10
10
21.60
26.40
16.0
TDZ 27
10
10
24.30
29.70
19.0
27.00
33.00
21.0
TDZ 30
10
10
(1) The Zener voltage (Vz) is measured 40ms after power is supplied.
(2) The operating resistances(Zz,Zzk) are measured by superimposing a minute alternating current
on the regulated current(Iz)
TYP.
Zener voltage : VZ(V)
lMARKING (TYPE NO.)
TYPE
TDZ　5.1
TDZ　5.6
TDZ　6.2
TDZ　6.8
TDZ　7.5
TDZ　8.2
TDZ　9.1
TDZ　10
TDZ　11
TDZ　12
TYPE　NO.
A2
C2
E2
F2
H2
J2
L2
05
15
25
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TYPE
TDZ　13
TDZ　15
TDZ　16
TDZ　18
TDZ　20
TDZ　22
TDZ　24
TDZ　27
TDZ　30
2/6
TYPE　NO.
35
45
55
65
75
85
95
A5
C5
2013.11 - Rev.D
Data Sheet
TDZ series
lElectrical characteristic curves
10
ZENER CURRENT : IZ(mA)
1
0.1
8.2
7.5
6.8
16
6.2
0.01
5.6
5.1
0.001
11
15
10
13
5
22
24
27
18
30
12
9.1
0
20
10
15
20
25
30
35
40
ZENER VOLTAGE : VZ(V)
VZ -IZ CHARACTERISTICS
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3/6
2013.11 - Rev.D
Data Sheet
TDZ series
lElectrical characteristic curves
10000
500
REVERS SURGE MAXIMUM
POWER : PRSM(W)
POWER DISPERSION : Pd(mW)
600
400
300
200
100
0
0
25
50
75
100
125
t
100
10
1
0.001
150
30
0.08
25
20
0.06
15
0.04
10
0.02
5
0
0
5
10
15
20
25
30
35
-5
TEMP.COEFFICIENCE : γZ(mV/°C)
TRANSIENT THERMAL IMPEDANCE : Rth(°C/W)
TEMP.COEFFICIENCE : γZ(%/°C)
0.1
0
ZENER VOLTAGE : VZ(V)
γZ -VZ CHARACTERISTICS
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0.01
0.1
1
10
TIME : t(ms)
PRSM-TIME CHARACTERISTICS
AMBIENT TEMPERATURE : Ta(°C)
Pd-Ta CHARACTERISTICS
-0.02
PRSM
1000
1000
Mounted on glass epoxy board
IM=10mA
IF=0.5A
time
1ms 300ms
Rth(j-a)
100
10
0.001
Rth(j-c)
0.01
0.1
1
10
100
1000
TIME : t(s)
Rth-t CHARACTERISTICS
4/6
2013.11 - Rev.D
Data Sheet
TDZ22
lElectrical characteristic curves
100
REVERSE CURRENT : IR(nA)
ZENER CURRENT : IZ(mA)
10
1
0.1
Ta = 125°C
Ta = 75°C
Ta = 25°C
0.01
0.001
Ta = -25°C
19
20
21
22
23
24
10
0.1
0.0001
1
Ta=25°C
IZ=10mA
n=30pcs
22.1
AVE : 21.96V
22
21.9
21.8
21.7
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
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0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
22.2
ZENER VOLTAGE : VZ(V)
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
10
Ta = -25°C
0.001
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
f = 1MHz
100
Ta = 25°C
0.01
ZENER VOLTAGE : VZ(V)
VZ -IZ CHARACTERISTICS
1000
Ta = 75°C
1
0.00001
25
Ta = 125°C
VZ DISPERSION MAP
5/6
2013.11 - Rev.D
Data Sheet
TDZ22
lElectrical characteristic curves
1
0.8
45
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
0.9
REVERSE CURRENT : IR(nA)
50
Ta=25°C
VR=17V
n=30pcs
0.7
0.6
0.5
0.4
AVE : 0.102nA
0.3
0.2
40
35
30
25
20
15
10
0.1
5
0
0
IR DISPERSION MAP
AVE : 34.42pF
Ta=25°C
f=1MHz
VR=0V
n=10pcs
Ct DISPERSION MAP
DYNAMIC IMPEDANCE : ZZ(W)
1000
100
10
1
0.1
1
10
ZENER CURRENT : IZ(mA)
ZZ -IZ CHARACTERISTICS
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6/6
2013.11 - Rev.D
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
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R1102A