R8008ANX Nch 800V 8A Power MOSFET Datasheet l Outline VDSS 800V RDS(on)(Max.) 1.03Ω ID ±8A PD 50W TO-220FM l Inner circuit l Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant l Packaging specifications Packing l Application Type Switching Power Supply Bulk Reel size (mm) - Tape width (mm) - Basic ordering unit (pcs) Taping code 500 - Marking R8008ANX l Absolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit VDSS 800 V TC = 25°C ID*1 ±8 A TC = 100°C ID*1 ±3.9 A ID,pulse*2 ±32 A Gate - Source voltage VGSS ±30 V Avalanche energy, single pulse EAS*3 4.2 mJ Avalanche energy, repetitive EAR*4 3.3 mJ Avalanche current Power dissipation (Tc = 25°C) IAR*3 4 A PD 50 W Tj 150 ℃ Range of storage temperature Tstg -55 to +150 ℃ Reverse diode dv/dt dv/dt 15 V/ns Drain - Source voltage Continuous drain current Pulsed drain current Junction temperature www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/13 20140410 - Rev.001 R8008ANX Datasheet l Absolute maximum ratings Parameter Symbol Drain - Source voltage slope Conditions VDS = 640V, ID = 8A dv/dt Tj = 125℃ l Thermal resistance Parameter Values Unit 50 V/ns Values Symbol Unit Min. Typ. Max. Thermal resistance, junction - case RthJC - - 2.5 ℃/W Thermal resistance, junction - ambient RthJA - - 70 ℃/W Soldering temperature, wavesoldering for 10s Tsold - - 265 ℃ l Electrical characteristics (Ta = 25°C) Parameter Symbol Values Conditions Unit Min. Typ. Max. 800 - - V V Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Drain - Source avalanche breakdown voltage V(BR)DS VGS = 0V, ID = 4A - 900 - VDS = 800V, VGS = 0V Tj = 25°C - 0.1 100 Tj = 125°C - - 1000 IGSS VGS = ±30V, VDS = 0V - - ±100 nA VGS(th) VDS = 10V, ID = 1mA 3 - 5 V VGS = 10V, ID = 4.0A Tj = 25°C - 0.79 1.03 Tj = 125°C - 1.54 - f = 1MHz, open drain - 6.6 - Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance Gate input resistance IDSS RDS(on)*6 RG www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 2/13 μA Ω Ω 20140410 - Rev.001 R8008ANX Datasheet l Electrical characteristics (Ta = 25°C) Parameter Symbol Values Conditions Min. Typ. Max. 2.0 4.0 - Transconductance gfs*6 VDS = 10V, ID = 4A Input capacitance Ciss VGS = 0V - 1080 - Output capacitance Coss VDS = 25V - 480 - Reverse transfer capacitance Crss f = 1MHz - 32 - Effective output capacitance, energy related Co(er) - 30.2 - Effective output capacitance, time related Co(tr) Turn - on delay time td(on)*6 Rise time Turn - off delay time Fall time VGS = 0V, VDS = 0V to 640V Unit S pF pF - 78.8 - VDD ⋍ 400V, VGS = 10V - 32 - tr*6 ID = 4.0A - 50 - td(off)*6 RL = 100Ω - 85 170 tf*6 RG = 10Ω - 30 60 ns l Gate charge characteristics (Ta = 25°C) Parameter Symbol Values Conditions Min. Typ. Max. Total gate charge Qg*6 VDD ⋍ 400V - 39 - Gate - Source charge Qgs*6 ID = 8A - 8.7 - Gate - Drain charge Qgd*6 VGS = 10V - 23 - Gate plateau voltage V(plateau) VDD ⋍ 400V, ID = 8A - 7.3 - Unit nC V *1 Limited only by maximum temperature allowed. *2 Pw ≤ 10μs, Duty cycle ≤ 1% *3 L⋍500μH, VDD=50V, RG=25Ω, starting Tj=25°C *4 L⋍500μH, VDD=50V, RG=25Ω, starting Tj=25°C, f=10kHz *5 Reference measurement circuits Fig.5-1. *6 Pulsed www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 3/13 20140410 - Rev.001 R8008ANX Datasheet l Body diode electirical characteristics (Source-Drain) (Ta = 25°C) Parameter Symbol Inverse diode continuous, forward current IS*1 Inverse diode direct current, pulsed ISM*2 Forward voltage VSD*6 Conditions Values Typ. Max. - - 8 A - - 32 A - - 1.5 V - 625 - ns - 7.03 - μC - 22.5 - A - 90 - A/μs TC = 25℃ Reverse recovery time trr*6 Reverse recovery charge Qrr*6 Peak reverse recovery current Irrm*6 Peak rate of fall of reverse recovery current dirr/dt VGS = 0V, IS = 8A IS = 8A di/dt = 100A/μs Tj = 25℃ l Typical transient thermal characteristics Symbol Value Rth1 0.144 Rth2 0.72 Rth3 2.15 Unit Min. Unit K/W Symbol Value Cth1 0.00267 Cth2 0.0348 Cth3 0.491 Unit Ws/K www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 4/13 20140410 - Rev.001 R8008ANX Datasheet l Electrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 5/13 20140410 - Rev.001 R8008ANX Datasheet l Electrical characteristic curves Fig.4 Avalanche Current vs. Inductive Load Fig.5 Avalanche Power Losses Fig.6 Avalanche Energy Derating Curve vs. Junction Temperature www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 6/13 20140410 - Rev.001 R8008ANX Datasheet l Electrical characteristic curves Fig.7 Typical Output Characteristics(I) Fig.8 Typical Output Characteristics(II) Fig.9 Tj = 150°C Typical Output Characteristics (I) Fig.10 Tj = 150°C Typical Output Characteristics (II) www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 7/13 20140410 - Rev.001 R8008ANX Datasheet l Electrical characteristic curves Fig.11 Breakdown Voltage vs. Junction Temperature Fig.12 Typical Transfer Characteristics Fig.13 Gate Threshold Voltage vs. Junction Temperature Fig.14 Transconductance vs. Drain Current www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 8/13 20140410 - Rev.001 R8008ANX Datasheet l Electrical characteristic curves Fig.15 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature Fig.17 Static Drain - Source On - State Resistance vs. Drain Current www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 9/13 20140410 - Rev.001 R8008ANX Datasheet l Electrical characteristic curves Fig.18 Typical Capacitance vs. Drain Source Voltage Fig.19 Coss Stored Energy Fig.20 Switching Characteristics Fig.21 Dynamic Input Characteristics www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 10/13 20140410 - Rev.001 R8008ANX Datasheet l Electrical characteristic curves Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.23 Reverse Recovery Time vs. Inverse Diode Forward Current www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 11/13 20140410 - Rev.001 R8008ANX Datasheet l Measurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 12/13 20140410 - Rev.001 R8008ANX Datasheet l Dimensions www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 13/13 20140410 - Rev.001