EMH4 / UMH4N / IMH4A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Outline Parameter Tr1 and Tr2 VCEO 50V 100mA 10k IC(MAX.) R1 EMT6 UMT6 (6) (6) (5) (5) (4) (4) (1) (1) (2) (2) (3) (3) EMH4 (SC-107C) SMT6 UMH4N SOT-353 (SC-88) (4) (5) Features (6) 1) Built-In Biasing Resistors. 2) Two DTC114T chips in one package. 3) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 5) Only the on/off conditions need to be set for operation, making the circuit design easy. 6) Lead Free/RoHS Compliant. (3) (2) (1) IMH4A SOT-457 (SC-74) Inner circuit IMH4A EMH4 / UMH4N Collector (6) Base (5) Emitter (4) Collector (4) Base (5) Emitter (6) (1) Emitter (2) Base (3) Collector (3) Emitter (2) Base (1) Collector Application Inverter circuit, Interface circuit, Driver circuit Packaging specifications Basic Reel size Tape width ordering (mm) (mm) unit (pcs) Package Package size (mm) Taping code EMH4 EMT6 1616 T2R 180 8 8,000 H4 UMH4N UMT6 2021 TN 180 8 3,000 H4 IMH4A SMT6 2928 T110 180 8 3,000 H4 Part No. www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/6 Marking 2014.10 - Rev.C Data Sheet EMH4 / UMH4N / IMH4A Absolute maximum ratings (Ta = 25°C) <For Tr1 and Tr2 in common> Parameter Symbol Values Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC(MAX.)*1 100 mA Collector current Collector Power dissipation EMH4 / UMH4N PD IMH4A Junction temperature Range of storage temperature *2 150 (Total) *3 mW 300 (Total) *4 mW Tj 150 °C Tstg 55 to 150 °C Electrical characteristics(Ta = 25°C) <For Tr1 and Tr2 in common> Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage Emitter-base breakdown voltage Min. Typ. Max. Unit IC= 50A 50 - - V BVCEO IC= 1mA 50 - - V BVEBO IE= 50A 5 - - V Collector cut-off current ICBO VCB = 50V - - 0.5 A Emitter cut-off current IEBO VEB = 4V - - 0.5 A VCE(sat) IC / IB= 10mA / 1mA - - 0.3 V DC current gain hFE VCE= 5V , IC= 1mA , 100 250 600 - Input resistance R1 - 7 10 13 k Transition frequency fT VCE = 10V, IE = 5mA, f = 100MHz - 250 - MHz Collector-emitter saturation voltage *1 Conditions *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 2/6 2014.10 - Rev.C Data Sheet EMH4 / UMH4N / IMH4A Electrical characteristic curves(Ta = 25°C) Fig.2 Grounded emitter output characteristics Fig.1 Grounded emitter propagation characteristics IB= 500μA 100 10 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) 1 0.1 Ta=100ºC 25ºC 40ºC 0.01 0.001 0 0.5 1 1.5 2 400μA 350μA 80 300μA 250μA 60 200μA 150μA 40 100μA 20 50μA 0A 0 0 BASE TO EMITTER VOLTAGE : VBE (V) 5 10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.4 Collector-emitter saturation voltage vs. Collector Current Fig.3 DC Current gain vs. Collector Current 1 1k VCE=5V 200 Ta=100°C 25°C −40°C 100 50 20 10 5 2 1 100μ 200μ 500μ 1m 2m 200m Ta=100°C 25°C −40°C 100m 50m 20m 10m 5m 2m 1m 100μ 200μ 500μ 1m 5m 10m 20m 50m100m 2m 5m 10m 20m 50m100m COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. lC/lB=10 500m COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 500 DC CURRENT GAIN : hFE 450μA Ta=25ºC VCE=5V 3/6 2014.10 - Rev.C Data Sheet EMH4 / UMH4N / IMH4A Dimensions (Unit : mm) D EMT6 A x c S A Lp Lp HE L E L b A1 y S l1 A e1 e S e b2 Patterm of terminal position areas DIM A1 A b c D E e HE L Lp x y DIM e1 b2 l1 MILIMETERS MIN MAX 0.00 0.10 0.45 0.55 0.17 0.27 0.08 0.18 1.50 1.70 1.10 1.30 0.50 1.50 1.70 0.10 0.30 0.35 0.10 0.10 MILIMETERS MIN MAX 1.25 0.37 0.45 INCHES MIN 0 0.018 0.007 0.003 0.059 0.043 MAX 0.004 0.022 0.011 0.007 0.067 0.051 0.02 0.059 0.004 - 0.067 0.012 0.014 0.004 0.004 INCHES MIN MAX 0.049 - 0.015 0.018 Dimension in mm/inches www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 4/6 2014.10 - Rev.C Data Sheet EMH4 / UMH4N / IMH4A Dimensions (Unit : mm) D A e c x Lp A3 S A e l1 A1 y S e1 A b HE E Q L1 UMT6 S b2 Patterm of terminal position areas DIM A A1 A3 b c D E e HE L1 Lp Q x y DIM e1 b2 l1 MILIMETERS MIN MAX 0.80 1.00 0.00 0.10 0.25 0.15 0.30 0.10 0.20 1.90 2.10 1.15 1.35 0.65 2.00 2.20 0.20 0.50 0.25 0.55 0.10 0.30 0.10 0.10 MILIMETERS MIN MAX 1.55 0.40 0.65 INCHES MIN 0 MAX 0.039 0.004 0.01 0.006 0.004 0.075 0.045 0.012 0.008 0.083 0.053 0.03 0.079 0.008 0.01 0.004 - 0.087 0.02 0.022 0.012 0.004 0.004 INCHES MIN MAX 0.06 - 0.016 0.026 Dimension in mm/inches www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 5/6 2014.10 - Rev.C Data Sheet EMH4 / UMH4N / IMH4A Dimensions (Unit : mm) SMT6 D A e c L1 Lp HE E Q b A3 x S A y S A1 l1 A e1 e S b2 Patterm of terminal position areas DIM A A1 A3 b c D E e HE L1 Lp Q x y DIM e1 b2 l1 MILIMETERS MIN MAX 1.00 1.30 0.00 0.10 0.25 0.25 0.40 0.09 0.25 2.80 3.00 1.50 1.80 0.95 2.60 3.00 0.30 0.60 0.40 0.70 0.20 0.30 0.20 0.10 MILIMETERS MIN MAX 2.10 0.60 0.90 INCHES MIN 0.039 0 MAX 0.051 0.004 0.01 0.01 0.004 0.11 0.059 0.016 0.01 0.118 0.071 0.04 0.102 0.012 0.016 0.008 - 0.118 0.024 0.028 0.012 0.008 0.004 INCHES MIN MAX 0.08 - 0.024 0.035 Dimension in mm/inches www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 6/6 2014.10 - Rev.C Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. 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ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. 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