IMD10A Power management (dual digital transistors) Features 1) Two digital class transistors in a SMT package. 2) Up to 500mA can be driven. 3) Low VCE(sat) of drive transistors for low power dissipation. Datasheet Dimensions (Unit : mm) (4) (5) (6) (3) (2) (1) Package, marking, and packaging specifications Part No. IMD10A Package Marking Code Basic ordering unit (pieces) SMT6 D10 T108 3000 SOT-457 ROHM : SMT6 EIAJ : SC-74 Each lead has same dimensions Absolute maximum ratings (Ta=25C) (4) (5) (6) R2 R1 DTr1 DTr2 R1 (3) (2) (1) Equivalent circuit DTr1 Parameter Symbol Limits Unit VCC VIN IC −50 −5 to +5 −500 V V mA Symbol Limits Unit VCBO VCEO 50 50 5 100 V V V mA Limits 300(TOTAL) Unit 150 °C °C Supply voltage Input voltage Collector current DTr2 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current VEBO IC Total Parameter Symbol Power dissipation Junction temperature Pd Tj Storage temperature Tstg ∗ −55 to +150 mW ∗ 200mW per element must not be exceeded. www.rohm.com c 2013 ROHM Co., Ltd. All rights reserved. ○ 1/2 2013.11 - Rev.C Datasheet IMD10A Electrical characteristics (Ta=25C) DTr1 Symbol Parameter Min. − −1.5 − − − VI(off) VI(on) VO(on) II Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio IO(off) GI 68 − fT Typ. − − −0.1 − − − Max. R2 / R1 70 80 200 100 100 Symbol Min. Typ. Max. BVCBO BVCEO 50 50 5 − − − − − − − − − R1 Unit −0.3 − −0.3 −25 −0.5 − − Conditions − − − − − − − − IO= −100mA , VO= −5V VCE= −10V , IE=50mA , f=100MHz − − VCC= 5V , IO= 100μA VO= 0.3V , IO= 100mA IO= 100mA , II= 5mA VI= 2V VCC= 50V , VI=0V V V mA μA − MHz Ω 130 120 − ∗ Transition frequency of the device. ∗ DTr2 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Input resistance BVEBO ICBO − − − IEBO VCE(sat) hFE fT 100 R1 7 − Unit 0.5 0.5 0.3 600 250 250 10 Conditions IC=50μA IC=1mA V V V μA μA V IE=50μA VCB=50V VEB=4V IC=10mA , IB=1mA VCE=5V , IC=1mA − − MHz kΩ 13 VCE=10V , IE= ∗ Transition frequency of the device. −5mA , f=100MHz − ∗ Electrical characteristic curves 100 50 20 10 5 −200m −50m −20m −10m −5m −1m −500μ −1m −5m −10m −20m −50m −100m−200m −500m OUTPUT CURRENT : IO (A) −5m −10m −20m −50m −100m −200m 1k −2m Ta=100°C 25°C −40°C −50μ −20μ −10μ −5μ −1 −2 −5 −2 Ta= −40°C 25°C 100°C −1 −500m −100m −500μ −1m −2m −500m −3 INPUT VOLTAGE : VI(off) (V) Fig.4 Output current vs. Input voltage (OFF characteristics) www.rohm.com c 2013 ROHM Co., Ltd. All rights reserved. ○ 200 100 50 Ta=100°C 25°C −40°C 20 10 5 2 1 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.5 DC current gain vs. Collector current 2/2 −5m −10m −20m −50m −100m −200m −500m OUTPUT CURRENT : IO (A) VCE=5V 500 −1m −500μ DC CURRENT GAIN : hFE OUTPUT CURRENT : Io (A) −2m Fig.2 Output voltage vs. Output current characteristics VCC=−5V −5m −10 OUTPUT CURRENT : IO (A) Fig.1 DC current gain vs. Output current characteristics −10m −20 −200m Fig.3 Input voltage vs. Output current (ON characteristics) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 1 −500μ −1m −2m −2μ −1μ 0 Ta=100°C 25°C −40°C −100m VO = −0.3V −50 −2m 2 −200μ −100μ −100 IO/II=20/1 −500m OUTPUT VOLTAGE : VO(on) (V) DC CURRENT GAIN : GI 200 −1 VO = −5V Ta=100°C 25°C −40°C INPUT VOLTAGE : VI(on) (V) 1k 500 1 lC/lB=10 500m 200m 100m 50m Ta=100°C 25°C −40°C 20m 10m 5m 2m 1m 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.6 Collector-emitter saturation voltage vs. Collector current 2013.11 - Rev.C Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. 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