DTA144T series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) l Outline Parameter VCEO Value IC -100mA R1 47kΩ VMT3 EMT3 -50V DTA144TM (SC-105AA) l Features 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary NPN Types: DTC144T series 6) Lead Free/RoHS Compliant. UMT3 SMT3 DTA144TUA SOT-323(SC-70) l Inner circuit B: BASE C: COLLECTOR E: EMITTER Driver circuit l Packaging specifications DTA144TM DTA144TE DTA144TUA DTA144TKA DTA144TKA SOT-346(SC-59) l Application Switching circuit, Inverter circuit, Interface circuit, Part No. DTA144TE SOT-416(SC-75A) Package Package size Taping code VMT3 EMT3 UMT3 SMT3 1212 1616 2021 2928 T2L TL T106 T146 Reel size Tape width (mm) (mm) 180 180 180 180 8 8 8 8 Basic ordering unit.(pcs) Marking 8000 3000 3000 3000 96 96 96 96 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/7 20121023 - Rev.001 DTA144T series Datasheet l Absolute maximum ratings (Ta = 25°C) Parameter Symbol Values Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V IC -100 mA Collector current DTA144TM Power dissipation 150 DTA144TE 150 PD*1 DTA144TUA mW 200 DTA144TKA 200 Junction temperature Range of storage temperature Tj 150 ℃ Tstg -55 to +150 ℃ l Electrical characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BVCBO IC = -50μA -50 - - V Collector-emitter breakdown voltage BVCEO IC = -1mA -50 - - V Emitter-base breakdown voltage BVEBO IE = -50μA -5 - - V Collector cut-off current ICBO VCB = -50V - - -0.5 μA Emitter cut-off current IEBO VEB = -4V - - -0.5 μA VCE(sat) IC / IB = -5mA / -0.5mA - - -0.3 V DC current gain hFE VCE = -5V, IC = -1mA 100 250 600 - Input resistance R1 32.9 47 61.1 kΩ Transition frequency f T*2 - 250 - MHz Collector-emitter saturation voltage VCE = -10V, IE = 5mA, f = 100MHz *1 Each terminal mounted on a reference footprint *2 Characteristics of built-in transistor www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/7 20121023 - Rev.001 DTA144T series Datasheet l Electrical characteristic curves(Ta=25℃ ) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC Current gain vs. Collector Current Fig.4 Collector-emitter saturation voltage vs. Collector Current www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3/7 20121023 - Rev.001 DTA144T series Datasheet l Dimensions www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/7 20121023 - Rev.001 DTA144T series Datasheet l Dimensions www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 5/7 20121023 - Rev.001 DTA144T series Datasheet l Dimensions www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 6/7 20121023 - Rev.001 DTA144T series Datasheet l Dimensions www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 7/7 20121023 - Rev.001