EMD22 / UMD22N : Transistors

EMD22 / UMD22N
NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
<For DTr1(NPN)>
Outline
Parameter
VCC
IC(MAX.)
R1
R2
Value
EMT6
UMT6
(6)
(6)
(5)
(5)
50V
100mA
4.7k
47k
(4)
(4)
(1)
(1)
(2)
(2)
(3)
(3)
EMD22
(SC-107C)
UMD22N
SOT-363 (SC-88)
<For DTr2(PNP)>
Parameter
Value
VCC
50V
100mA
4.7k
47k
IC(MAX.)
R1
R2
Inner circuit
Features
1) Both the DTC143Z chip and DTA143Z chip
in one package.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Lead Free/RoHS Compliant.
OUT
(6)
IN
(5)
R1
R2
DTr1
R2
(1)
GND
GND
(4)
R1
(2)
IN
DTr2
(3)
OUT
Application
Inverter circuit, Interface circuit, Driver circuit
Packaging specifications
Basic
Reel size Tape width
ordering
(mm)
(mm)
unit (pcs)
Package
Package
size
(mm)
Taping
code
EMD22
EMT6
1616
T2R
180
8
8,000
D22
UMD22N
UMT6
2021
TR
180
8
3,000
D22
Part No.
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© 2013 ROHM Co., Ltd. All rights reserved.
1/7
Marking
2013.10 - Rev.D
Data Sheet
EMD22 / UMD22N
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
DTr1(NPN)
DTr2(PNP)
Unit
Supply voltage
VCC
50
50
V
Input voltage
VIN
5 to 30
30 to 5
V
Output current
IO
100
100
mA
IC(MAX.)*1
*2
PD
100
100
mA
*3
mW
Collector current
Power dissipation
Tj
150
°C
Tstg
55 to 150
°C
Junction temperature
Range of storage temperature
150 (Total)
Electrical characteristics(Ta = 25°C) <For DTr1(NPN)>
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
VI(off)
VCC = 5V, IO = 100A
-
-
0.5
VI(on)
VO = 0.3V, IO = 5mA
1.3
-
-
VO(on)
IO / II = 5mA / 0.25mA
-
0.1
0.3
V
VI = 5V
-
-
1.8
mA
IO(off)
VCC = 50V, VI = 0V
-
-
0.5
A
DC current gain
GI
VO = 5V, IO = 10mA
80
-
-
-
Input resistance
R1
-
3.29
4.7
6.11
k
Resistance ratio
R2/R1
-
8
10
12
-
VCE = 10V, IE = 5mA
f = 100MHz
-
250
-
MHz
Unit
Input voltage
Output voltage
Input current
Output current
Transition frequency
II
fT
*1
V
Electrical characteristics(Ta = 25°C) <For DTr2(PNP)>
Parameter
Input voltage
Output voltage
Input current
Output current
Symbol
Conditions
Min.
Typ.
Max.
VI(off)
VCC = 5V, IO = 100μA
-
-
0.5
VI(on)
VO = 0.3V, IO = 5mA
1.3
-
-
VO(on)
IO / II = 5mA / 0.25mA
-
0.1
0.3
V
VI = 5V
-
-
1.8
mA
VCC = 50V, VI = 0V
-
-
0.5
A
II
IO(off)
V
DC current gain
GI
VO = 5V, IO = 10mA
80
-
-
-
Input resistance
R1
-
3.29
4.7
6.11
k
Resistance ratio
R2/R1
-
8
10
12
-
VCE = 10V, IE = 5mA
f = 100MHz
-
250
-
MHz
Transition frequency
fT
*1
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
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2/7
2013.10 - Rev.D
Data Sheet
EMD22 / UMD22N
Electrical characteristic curves (Ta = 25°C) <For DTr1(NPN)>
Fig.2 Output current vs. input voltage
(OFF characteristics)
INPUT VOLTAGE : VI(on) [V]
OUTPUT CURRENT : IO [A]
Fig.1 Input voltage vs. output current
(ON characteristics)
OUTPUT CURRENT : IO [A]
INPUT VOLTAGE : VI(off)[V]
Fig.3 Output current vs. output voltage
Fig.4 DC current gain vs. output current
Ta=25ºC
II=
500A
80
450A
400A
350A
60
300A
250A
40
200A
150A
20
100A
0
50A
0A
0
5
10
OUTPUT CURRENT : IO [A]
OUTPUT VOLTAGE : VO [V]
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DC CURRENT GAIN : GI
OUTPUT CURRENT : IO [mA]
100
3/7
2013.10 - Rev.D
Data Sheet
EMD22 / UMD22N
Electrical characteristic curves (Ta = 25°C) <For DTr1(NPN)>
OUTPUT VOLTAGE : VO(on) [V]
Fig.5 Output voltage vs. output current
OUTPUT CURRENT : IO [A]
Electrical characteristic curves (Ta = 25°C) <For DTr2(PNP)>
Fig.7 Output current vs. input voltage
(OFF characteristics)
INPUT VOLTAGE : VI(on) [V]
OUTPUT CURRENT : IO [A]
Fig.6 Input voltage vs. output current
(ON characteristics)
OUTPUT CURRENT : IO [A]
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© 2013 ROHM Co., Ltd. All rights reserved.
INPUT VOLTAGE : VI(off)[V]
4/7
2013.10 - Rev.D
Data Sheet
EMD22 / UMD22N
Electrical characteristic curves (Ta = 25°C) <For DTr2(PNP)>
Fig.9 DC current gain vs. output current
Fig.8 Output current vs. output voltage
-100
II=
500A
-80
450A
400A
350A
-60
300A
250A
-40
200A
150A
-20
100A
DC CURRENT GAIN : GI
OUTPUT CURRENT : IO [mA]
Ta=25ºC
50A
0
0
-5
0A
-10
OUTPUT CURRENT : IO [A]
OUTPUT VOLTAGE : VO [V]
OUTPUT VOLTAGE : VO(on) [V]
Fig.10 Output voltage vs. output current
OUTPUT CURRENT : IO [A]
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© 2013 ROHM Co., Ltd. All rights reserved.
5/7
2013.10 - Rev.D
Data Sheet
EMD22 / UMD22N
Dimensions (Unit : mm)
D
x
c
S A
Lp
HE
L
E
L
EMT6
A
Lp
b
A1
y S
l1
A
e1
e
S
b2
e
Pattern of terminal position areas
[Not a recommended pattern of soldering pads] DIM
A
A1
b
c
D
E
e
HE
L
Lp
x
y
DIM
b2
e1
l1
MILIMETERS
MIN
MAX
0.45
0.55
0.00
0.10
0.17
0.27
0.08
0.18
1.50
1.70
1.10
1.30
0.50
1.50
1.70
0.10
0.30
0.35
0.10
0.10
INCHES
MIN
0.018
0.000
0.007
0.003
0.059
0.043
MAX
0.022
0.004
0.011
0.007
0.067
0.051
0.020
0.059
0.004
-
MILIMETERS
MIN
MAX
0.37
1.25
0.45
0.067
0.012
0.014
0.004
0.004
INCHES
MIN
-
MAX
0.015
0.049
-
0.018
Dimension in mm / inches
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6/7
2013.10 - Rev.D
Data Sheet
EMD22 / UMD22N
Dimensions (Unit : mm)
D
A
e
c
x
Lp
L1
A3
S A
e
e1
l1
y S
A1
A
b
HE
Q
E
UMT6
S
b2
Pattern of terminal position areas
[Not a recommended pattern of soldering pads] DIM
A
A1
A3
b
c
D
E
e
HE
L1
Lp
Q
x
y
MILIMETERS
MIN
MAX
0.80
1.00
0.00
0.10
0.25
0.15
0.30
0.10
0.20
1.90
2.10
1.15
1.35
0.65
2.00
2.20
0.20
0.50
0.25
0.55
0.10
0.30
0.10
0.10
INCHES
MIN
0.031
0.000
0.010
0.006
0.004
0.075
0.045
0.012
0.008
0.083
0.053
0.026
0.079
0.008
0.010
0.004
-
MILIMETERS
MIN
MAX
b2
0.40
e1
1.55
l1
0.65
Dimension in mm / inches
0.087
0.020
0.022
0.012
0.004
0.004
INCHES
DIM
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MAX
0.039
0.004
MIN
-
MAX
0.016
0.061
-
7/7
0.026
2013.10 - Rev.D
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
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Therefore, in order to prevent personal injury or fire arising from failure, please take safety
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provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
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this document.
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the recommended usage conditions and specifications contained herein.
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information.
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R1102A