US6J11 Pch -12V -1.3A Power MOSFET Datasheet lOutline VDSS -12V RDS(on) (Max.) 260mW ID -1.3A PD 1.0W lFeatures (6) TUMT6 (5) SOT-363T (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TUMT6). Tr1 Source Tr1 Gate Tr2 Drain Tr2 Source Tr2 Gate Tr1 Drain *1 ESD PROTECTION DIODE *2 BODY DIODE 5) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging Taping Reel size (mm) lApplication DC/DC converters Type 180 Tape width (mm) Basic ordering unit (pcs) 8 3,000 Taping code TR Marking J11 lAbsolute maximum ratings(Ta = 25°C) <It is the same ratings for the Tr1 and Tr2> Parameter Symbol Value Unit Drain - Source voltage VDSS -12 V Continuous drain current ID *1 1.3 A ID,pulse *2 5.2 A VGSS 10 V 1.0 W / total 0.7 W / element PD *4 0.32 W / total Tj 150 °C Tstg -55 to +150 °C Pulsed drain current Gate - Source voltage PD *3 Power dissipation Junction temperature Range of storage temperature www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/11 2012.10 - Rev.B Data Sheet US6J11 lThermal resistance Parameter Symbol Thermal resistance, junction - ambient Values Unit Min. Typ. Max. RthJA *3 - - 125 °C/W RthJA *4 - - 391 °C/W lElectrical characteristics, unless otherwise specified (Ta = 25°C) <It is the same characteristics for the Tr1 and Tr2> Parameter Drain - Source breakdown voltage Breakdown voltage temperature coefficient Symbol V(BR)DSS Conditions VGS = 0V, ID = -1mA ΔV(BR)DSS ID= -1mA ΔTj referenced to 25°C Values Unit Min. Typ. Max. -12 - - V - -17 - mV/°C Zero gate voltage drain current IDSS VDS = -12V, VGS = 0V - - -1 mA Gate - Source leakage current IGSS VGS = 10V, VDS = 0V - - 10 mA Gate threshold voltage VGS (th) VDS = -6V, ID = 1mA -0.3 - -1.0 V Gate threshold voltage temperature coefficient ΔV(GS)th ΔTj ID= -1mA referenced to 25°C - 2.4 - mV/°C VGS= -4.5V, ID= -1.3A - 190 260 VGS= -2.5V, ID= -0.6A - 280 390 RDS(on) *5 VGS= -1.8V, ID= -0.6A - 400 600 VGS= -1.5V, ID= -0.2A - 530 1060 VGS= -4.5V, ID= -1.3A, Tj=125°C - 280 400 RG f = 1MHz, open drain - 28 - W gfs *5 VDS= -6V, ID= -1.3A 1.4 2.8 - S Static drain - source on - state resistance Gate input resistannce Transconductance mW *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a ceramic board (30×30×0.8mm) *4 Mounted on a FR4 (15×20×0.8mm) *5 Pulsed www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/11 2012.10 - Rev.B Data Sheet US6J11 lElectrical characteristics(Ta = 25°C) <It is the same characteristics for the Tr1 and Tr2> Parameter Symbol Conditions Values Min. Typ. Max. Input capacitance Ciss VGS = 0V - 290 - Output capacitance Coss VDS = -6V - 28 - Reverse transfer capacitance Crss f = 1MHz - 21 - VDD ⋍ -6V, VGS = -4.5V - 8 - tr *5 ID = -0.6A - 10 - td(off) *5 RL = 10W - 30 - tf *5 RG = 10W - 9 - Turn - on delay time Rise time Turn - off delay time Fall time td(on) *5 Unit pF ns lGate Charge characteristics(Ta = 25°C) <It is the same characteristics for the Tr1 and Tr2> Parameter Symbol Conditions *5 Total gate charge Qg Gate - Source charge Qgs *5 Gate - Drain charge Qgd *5 VDD ⋍ -6V, ID= -1.3A VGS = -4.5V Values Min. Typ. Max. - 2.4 - - 0.6 - - 0.4 - Unit nC lBody diode electrical characteristics (Source-Drain)(Ta = 25°C) <It is the same characteristics for the Tr1 and Tr2> Parameter Inverse diode continuous, forward current Forward voltage www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Symbol IS *1 VSD *5 Conditions Values Unit Min. Typ. Max. Ta = 25°C - - -0.5 A VGS = 0V, Is = -1.3A - - -1.2 V 3/11 2012.10 - Rev.B Data Sheet US6J11 lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 100 10 Drain Current : -ID [A] Power Dissipation : PD/PD max. [%] 120 80 60 40 20 0 0 50 100 150 PW = 1ms 1 DC Operation 0.1 Operation in this area is limited by RDS(on) (VGS = -4.5V) 0.1 1 10 100 Drain - Source Voltage : -VDS [V] Junction Temperature : Tj [°C] Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width Fig.4 Single Pulse Maxmum Power dissipation 1000 10 Ta=25ºC Single Pulse Ta=25ºC Single Pulse 1 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 bottom Single 0.1 0.01 0.001 0.0001 Rth(ch-a)=179ºC/W Rth(ch-a)(t)=r(t)×Rth(ch-a) Mounted on ceramic board (30mm × 30mm × 0.8mm) 0.01 1 Peak Transient Power : P(W) Normalized Transient Thermal Resistance : r(t) PW = 100ms PW = 10ms 0.01 200 Ta=25ºC Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 10 1 0.0001 100 Pulse Width : PW [s] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 100 0.01 1 100 Pulse Width : PW [s] 4/11 2012.10 - Rev.B Data Sheet US6J11 lElectrical characteristic curves Fig.6 Typical Output Characteristics(II) Fig.5 Typical Output Characteristics(I) 2 2 Ta=25ºC Pulsed VGS= -10.0V VGS= -4.5V 1.5 VGS= -2.5V 1.5 VGS= -2.5V Drain Current : -ID [A] Drain Current : -ID [A] VGS= -4.5V VGS= -1.8V 1 VGS= -1.5V 0.5 VGS= -1.2V Ta=25ºC Pulsed VGS= -1.8V VGS= -1.5V 1 0.5 VGS= -1.2V VGS= -1.0V 0 0 0.2 0.4 0.6 0.8 0 1 0 6 8 10 Fig.8 Typical Transfer Characteristics Fig.7 Breakdown Voltage vs. Junction Temperature 60 10 VGS = 0V ID = -1mA Pulsed VDS= -6V Pulsed 1 Drain Current : -ID [A] Drain - Source Breakdown Voltage : -V(BR)DSS [V] 4 Drain - Source Voltage : -VDS [V] Drain - Source Voltage : -VDS [V] 40 20 0 2 -50 0 50 100 Junction Temperature : Tj [°C] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 0.1 0.01 0.001 150 Ta= 125ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 0 0.5 1 1.5 2 Gate - Source Voltage : -VGS [V] 5/11 2012.10 - Rev.B Data Sheet US6J11 lElectrical characteristic curves Fig.9 Gate Threshold Voltage vs. Junction Temperature 10 VDS = -10V ID = -1mA Pulsed VDS= -6V Pulsed Transconductance : gfs [S] Gate Threshold Voltage : -VGS(th) [V] 2 Fig.10 Transconductance vs. Drain Current 1 0 -50 0 50 100 1 Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC 0.1 0.01 150 0.1 Junction Temperature : Tj [°C] Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage 600 1 0.8 0.6 0.4 0.2 -25 0 25 50 75 100 125 150 Static Drain - Source On-State Resistance : RDS(on) [mW] 1.2 Drain Current Dissipation : ID/ID max. (%) 10 Drain Current : -ID [A] Fig.11 Drain CurrentDerating Curve 0 1 ID = -0.6A 400 ID = -1.3A 300 200 100 0 0 2 4 6 8 10 Gate - Source Voltage : -VGS [V] Junction Temperature : Tj [ºC] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Ta=25ºC Pulsed 500 6/11 2012.10 - Rev.B Data Sheet US6J11 lElectrical characteristic curves Fig.13 Static Drain - Source On - State Resistance vs. Drain Current(I) Fig.14 Static Drain - Source On - State Resistance vs. Junction Temperature 300 Ta=25ºC Pulsed 1000 VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 100 10 0.01 0.1 1 10 Static Drain - Source On-State Resistance : RDS(on) [mW] Static Drain - Source On-State Resistance : RDS(on) [mW] 10000 Drain Current : -ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 250 200 150 100 VGS = -4.5V ID = -1.3A Pulsed 50 0 -50 -25 0 25 50 75 100 125 150 Junction Temperature : Tj [ºC] 7/11 2012.10 - Rev.B Data Sheet US6J11 lElectrical characteristic curves Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) Static Drain - Source On-State Resistance : RDS(on) [mW] VGS= -4.5V Pulsed Static Drain - Source On-State Resistance : RDS(on) [mW] 10000 10000 VGS= -2.5V Pulsed 1000 1000 100 10 Fig.16 Static Drain-Source On-State Resistance vs. Drain Current(III) Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.01 0.1 1 10 100 10 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.01 Drain Current : -ID [A] 10 Fig.18 Static Drain - Source On - State Resistance vs. Drain Current(V) 10000 VGS= -1.8V Pulsed 1000 Static Drain - Source On-State Resistance : RDS(on) [mW] 10000 Static Drain - Source On-State Resistance : RDS(on) [mW] 1 Drain Current : -ID [A] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current(IV) VGS= -1.5V Pulsed 1000 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 100 10 0.1 0.01 0.1 1 100 10 Drain Current : -ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 10 0.01 0.1 1 10 Drain Current : -ID [A] 8/11 2012.10 - Rev.B Data Sheet US6J11 lElectrical characteristic curves Fig.19 Typical Capacitance vs. Drain - Source Voltage Fig.20 Switching Characteristics 1000 1000 Ciss Switching Time : t [ns] Capacitance : C [pF] tf 100 Coss Crss 10 Ta = 25ºC f = 1MHz VGS = 0V 1 0.01 0.1 1 10 100 10 1 0.01 0.1 Drain - Source Voltage : -VDS [V] 1 10 Drain Current : -ID [A] Fig.22 Source Current vs. Source Drain Voltage Fig.21 Dynamic Input Characteristics 10 5 VGS=0V Pulsed 4 Source Current : -IS [A] Gate - Source Voltage : -VGS [V] td(on) tr 100 td(off) Ta=25ºC VDD= -6V VGS= -4.5V RG=10W Pulsed 3 2 Ta=25ºC VDD= -6V ID= -1.3A RG=10W Pulsed 1 0 0 0.5 1 1.5 2 2.5 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.1 0.01 3 0 0.5 1 1.5 Source-Drain Voltage : -VSD [V] Total Gate Charge : Qg [nC] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1 9/11 2012.10 - Rev.B Data Sheet US6J11 lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 10/11 2012.10 - Rev.B Data Sheet US6J11 lDimensions (Unit : mm) D A e x S A Lp HE E L TUMT6 b c e1 A A2 e A1 l1 y S S b2 Pattern of terminal position areas [Not a recommended pattern of soldering pads] DIM A A1 A2 b c D E e HE L Lp x y DIM b2 e1 l1 MILIMETERS MIN MAX 0.85 0.00 0.10 0.72 0.82 0.25 0.40 0.12 0.22 1.90 2.10 1.60 1.80 0.65 2.00 2.20 0.20 0.40 0.10 0.10 INCHES MIN 0.000 0.028 0.010 0.005 0.075 0.063 MAX 0.033 0.004 0.032 0.016 0.009 0.083 0.071 0.026 0.079 0.087 0.008 - MILIMETERS MIN MAX 0.50 1.70 0.50 0.016 0.004 0.004 INCHES MIN - MAX 0.020 0.067 - 0.020 Dimension in mm / inches www.rohm.com © 2012 ROHM Co., Ltd. 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