Datasheet

UMH8N / IMH8A
Datasheet
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
Outline
Parameter
VCEO
IC
R1
Tr1 and Tr2
UMT6
SMT6
(6)
(4)
(5)
(5)
50V
100mA
10k
(6)
(4)
(3)
(1)
(2)
(2)
(1)
(3)
IMH8A
SOT-457 (SC-74)
UMH8N
SOT-353 (SC-88)
Inner circuit
Features
1) Built-In Biasing Resistors.
2) Two DTC114T chips in one package.
3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
4) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
5) Only the on/off conditions need to be set for
operation, making the circuit design easy.
6) Lead Free/RoHS Compliant.
Collector
(6)
Collector
(4)
Base
(5)
R1
DTr1
DTr2
R1
(1)
Emitter
(2)
Emitter
(3)
Base
UMH8N
Base
(4)
Emitter
(5)
Emitter
(6)
R1
DTr1
DTr2
R1
Application
Inverter circuit, Interface circuit, Driver circuit
(3)
Collector
(2)
Base
(1)
Collector
IMH8A
Packaging specifications
Basic
Reel size Tape width
ordering
(mm)
(mm)
unit (pcs)
Package
Package
size
(mm)
Taping
code
UMH8N
UMT6
2021
TN
180
8
3,000
H8
IMH8A
SMT6
2928
T110
180
8
3,000
H8
Part No.
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© 2014 ROHM Co., Ltd. All rights reserved.
1/5
Marking
2014.10 - Rev.C
Data Sheet
UMH8N / IMH8A
Absolute maximum ratings (Ta = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Symbol
Values
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
IC*1
100
mA
Collector current
Collector Power dissipation
UMH8N
*3
mW
300 (Total)*4
mW
Tj
150
°C
Tstg
55 to 150
°C
PD
IMH8A
Junction temperature
Range of storage temperature
150 (Total)
*2
Electrical characteristics(Ta = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Symbol
Collector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Min.
Typ.
Max.
Unit
IC= 50A
50
-
-
V
BVCEO
IC= 1mA
50
-
-
V
BVEBO
IE= 50A
5
-
-
V
Collector cut-off current
ICBO
VCB = 50V
-
-
0.5
A
Emitter cut-off current
IEBO
VEB = 4V
-
-
0.5
A
VCE(sat)
IC / IB= 10mA / 1mA
-
-
0.3
V
DC current gain
hFE
VCE= 5V , IC= 1mA
100
250
600
-
Input resistance
R1
-
7
10
13
k
Transition frequency
fT
VCE = 10V, IE = 5mA
f = 100MHz
-
250
-
MHz
Collector-emitter saturation voltage
*1
Conditions
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
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© 2014 ROHM Co., Ltd. All rights reserved.
2/5
2014.10 - Rev.C
Data Sheet
UMH8N / IMH8A
Electrical characteristic curves (Ta = 25°C) <For DTr1 and DTr2 in common>
Fig.2 Grounded emitter output
characteristics I = 500A
Fig.1 Grounded emitter propagation
characteristics
VCE=5V
COLLECTOR CURRENT : IC [mA]
COLLECTOR CURRENT : IC [mA]
B
100
10
1
0.1
Ta=100ºC
25ºC
40ºC
0.01
0.001
450A
Ta=25ºC
400A
350A
80
300A
250A
60
200A
150A
40
100A
20
50A
0A
0
0
0.5
1
1.5
2
0
5
10
COLLECTOR TO EMITTER VOLTAGE : VCE [V]
BASE TO EMITTER VOLTAGE : VBE [V]
Fig.4 Collector-emitter saturation voltage
vs. Collector Current
DC CURRENT GAIN : hFE
COLLECTOR SATURATION
VOLTAGE : VCE(sat) [V]
Fig.3 DC Current gain
vs. Collector Current
COLLECTOR CURRENT : IC [mA]
COLLECTOR CURRENT : IC [mA]
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© 2014 ROHM Co., Ltd. All rights reserved.
3/5
2014.10 - Rev.C
Data Sheet
UMH8N / IMH8A
Dimensions (Unit : mm)
D
A
e
c
x
Lp
L1
A3
S A
e
e1
l1
y S
A1
A
b
HE
Q
E
UMT6
S
b2
Pattern of terminal position areas
[Not a recommended pattern of soldering pads] DIM
A
A1
A3
b
c
D
E
e
HE
L1
Lp
Q
x
y
DIM
b2
e1
l1
MILIMETERS
MIN
MAX
0.80
1.00
0.00
0.10
0.25
0.15
0.30
0.10
0.20
1.90
2.10
1.15
1.35
0.65
2.00
2.20
0.20
0.50
0.25
0.55
0.10
0.30
0.10
0.10
INCHES
MIN
0.031
0.000
MAX
0.039
0.004
0.010
0.006
0.004
0.075
0.045
0.012
0.008
0.083
0.053
0.026
0.079
0.008
0.010
0.004
-
MILIMETERS
MIN
MAX
0.40
1.55
0.65
0.087
0.020
0.022
0.012
0.004
0.004
INCHES
MIN
-
MAX
0.016
0.061
-
0.026
Dimension in mm / inches
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© 2014 ROHM Co., Ltd. All rights reserved.
4/5
2014.10 - Rev.C
Data Sheet
UMH8N / IMH8A
Dimensions (Unit : mm)
D
A
e
SMT6
c
L1
Lp
HE
E
Q
A3
b
x
S A
l1
A
e1
e
A1
y S
S
b2
Pattern of terminal position areas
[Not a recommended pattern of soldering pads] DIM
A
A1
A3
b
c
D
E
e
HE
L1
Lp
Q
x
y
DIM
b2
e1
l1
MILIMETERS
MIN
MAX
1.00
1.30
0.00
0.10
0.25
0.25
0.40
0.09
0.25
2.80
3.00
1.50
1.80
0.95
2.60
3.00
0.30
0.60
0.40
0.70
0.20
0.30
0.20
0.10
INCHES
MIN
0.039
0.000
MAX
0.051
0.004
0.010
0.010
0.004
0.110
0.059
0.016
0.010
0.118
0.071
0.037
0.102
0.012
0.016
0.008
-
MILIMETERS
MIN
MAX
0.60
2.10
0.90
0.118
0.024
0.028
0.012
0.008
0.004
INCHES
MIN
-
MAX
0.024
0.083
-
0.035
Dimension in mm / inches
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© 2014 ROHM Co., Ltd. All rights reserved.
5/5
2014.10 - Rev.C
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
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below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
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equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
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document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
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non-compliance with any applicable laws or regulations.
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R1102A