Schottky Barrier Diode Data Sheet RB078BM30S lApplication lDimensions (Unit : mm) lLand size figure (Unit : mm) General Rectification 6.0 6.0 1.6 1) Power mold type (TO-252) 1.6 2.0 lFeatures 3.0 1 2) High reliability 2.3 TO-252 2.3 3) Low VF (2) Cathode lStructure ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date lConstruction Silicon epitaxial planar type (1) Open lTaping specifications (Unit : mm) (3) Anode lAbsolute maximum ratings (Tc= 25°C) Parameter Symbol Limits Unit Repetitive Peak Reverse Voltage VRM 30 V Reverse Voltage VR 30 V Average forward rectified current Non-repetitive Forward Current Surge Peak Operating Junction Temperature Storage Temperature Conditions Duty≦0.5 Direct Reverse Voltage 60Hz half sin Wave resistive load, Tc=126°C max. 60Hz half sin wave, Non-repetitive at Ta=25ºC Io 5 A IFSM 50 A Tj 150 °C - Tstg -55 to +150 °C - lElectrical characteristics (Tj = 25°C) Parameter Symbol Min. Typ. Max. Conditions Unit Forward voltage VF - - 0.72 V IF=5.0A Reverse current IR - - 5 mA VR=30V www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/5 2014.10 - Rev.A Data Sheet RB078BM30S lElectrical characteristic curves 1000000 100000 Tj = 75°C REVERSE CURRENT : IR(nA) FORWARD CURRENT : IF(A) 10 Tj = 125°C 1 Tj = 150°C Tj = 25°C 0.1 Tj = -25°C 1000 Tj = 75°C 100 10 Tj = 25°C 1 Tj = -25°C 0.01 0.1 0 100 200 300 400 500 600 700 800 0 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 10 20 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 1000 680 FORWARD VOLTAGE : VF(mV) f = 1MHz CAPACITANCE BETWEEN TERMINALS : Ct(pF) Tj = 125°C Tj = 150°C 10000 100 10 Tj=25°C IF=5A n=30pcs 670 660 650 640 630 AVE : 613.7mV 620 610 600 590 580 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. VF DISPERSION MAP 2/5 2014.10 - Rev.A Data Sheet RB078BM30S lElectrical characteristic curves 1000 Tj=25°C VR=30V n=30pcs REVERSE CURRENT : IR(nA) 180 170 160 150 140 AVE : 115nA 130 120 CAPACITANCE BETWEEN TERMINALS : Ct(pF) 190 950 900 850 AVE : 825.5pF 110 100 800 IR DISPERSION MAP Ct DISPERSION MAP 250 IFSM 8.3ms 1cyc. 200 150 AVE : 102A 100 50 REVERSE RECOVERY TIME : trr(ns) 40 300 PEAK SURGE FORWARD CURRENT : IFSM(A) Tj=25°C f=1MHz VR=0V n=10pcs Tj=25°C IF=0.5A IR=1A Irr / IR=0.25 n=10pcs 35 30 25 20 AVE : 15.3ns 15 10 5 0 0 IFSM DISPERSION MAP www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. trr DISPERSION MAP 3/5 2014.10 - Rev.A Data Sheet RB078BM30S lElectrical characteristic curves 1000 PEAK SURGE FORWARD CURRENT : IFSM(A) PEAK SURGE FORWARD CURRENT : IFSM(A) 1000 100 IFSM 8.3ms 8.3ms IFSM time 1cyc. 100 1cyc. 10 10 1 10 100 1 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 TIME : t(ms) IFSM-t CHARACTERISTICS 0.05 6 5 D = 1/2 REVERSE POWER DISPERSION : PR (W) FORWARD POWER DISPERSION : PF (W) 10 4 Sin(θ=180) 3 2 DC 1 0.04 0.03 Sin(θ=180) 0.02 DC 0.01 0 0 0 5 10 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) IO-PF CHARACTERISTICS www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. D = 1/2 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 4/5 2014.10 - Rev.A Data Sheet RB078BM30S lElectrical characteristic curves 15 Rth(j-a) 10 Rth(j-c) Mounted on glass epoxy board 1 IM=100mA IF=1A time AVERAGE RECTIFIED FORWARD CURRENT : Io(A) TRANSIENT THERMAL IMPEDANCE : Rth (°C/W) 100 0V t 10 DC T VR D=t/T VR=VRM/2 Tj=150°C D = 1/2 5 Sin(θ=180) 1ms 300ms 0.1 0.001 0 0.01 0.1 1 10 100 0 1000 TIME : t(s) Rth-t CHARACTERISTICS 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta(°C) DERATING CURVE (Io-Ta) 15 30 ELECTROSTATIC DISCHARGE TEST : ESD(kV) Io 0A AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io 0A 0V t 10 DC VR T D=t/T VR=VRM/2 Tj=150°C D = 1/2 5 Sin(θ=180) 0 25 AVE : 26.5kV 20 15 10 5 0 0 25 50 75 100 125 C=200pF R=0W C=100pF R=1.5kW 150 CASE TEMPERATURE : Tc(°C) DERATING CURVE (Io-Tc) www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. AVE : 7.1kV ESD DISPERSION MAP 5/5 2014.10 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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