RF05VAM2S : Diode

Super Fast Recovery Diode
Data Sheet
RF05VAM2S
lSerise
lDimensions (Unit : mm)
Standard Fast Recovery
lLand size figure (Unit : mm)
0.17±0.1
0.05
1.1
2.0
1.4±0.1
1.3±0.05
2.5±0.2
2.0±0.1
1.9±0.1
High frequency rectification
0.8 0.5
lApplication
TUMD2M
lFeatures
Cathode
1) Small mold type (TUMD2M)
lStructure
0.8±0.05
2) High speed switching
0.6±0.2
0.1
ROHM : TUMD2M
dot (year week factory) + day
3) Low forward voltage
Anode
lTaping Dimensions (Unit : mm)
lConstruction
Silicon epitaxial planar type
lAbsolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
200
V
Reverse voltage
VR
Direct voltage
200
V
Average current
Io
On glass epoxy substrate
60Hz half sin wave , Resistive load
0.5
A
IFSM
60Hz half sin wave ,Non-repetitive at Tj=25°C
6
A
Tj
-
150
°C
Tstg
-
-55 to +150
°C
Non-repetitive forward surge current
Operating junction temperature
Storage temperature
lElectrical characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
VF
IF=0.5A
-
0.85 0.98
V
Reverse current
IR
VR=200V
-
0.01
10
mA
Reverse recovery time
trr
IF=0.5A, IR=1A, Irr=0.25×IR
-
11
25
ns
Rth(j-l)
Junction to lead
-
-
30
°C / W
Thermal resistance
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1/4
Typ. Max. Unit
2014.09 - Rev.A
Data Sheet
RF05VAM2S
lElectrical characteristic curves
10000
REVERSE CURRENT : IR(nA)
FORWARD CURRENT : IF(A)
10
1
0.1
Tj = 150°C
Tj = 125°C
0.01
Tj = 75°C
Tj = 150°C
1000
Tj = 125°C
100
Tj = 75°C
10
Tj = 25°C
1
Tj = 25°C
0.1
0.001
0
200
400
600
0
800 1000 1200 1400
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
100
150
200
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
100
100
f = 1MHz
Ta = 25°C
PEAK SURGE
FORWARD CURRENT : IFSM(A)
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
50
10
IFSM
8.3ms
8.3ms
1cyc.
10
1
Tj = 25°C
1
0.1
0
5
10
15
20
25
30
1
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
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© 2014 ROHM Co., Ltd. All rights reserved.
10
2/4
2014.09 - Rev.A
Data Sheet
RF05VAM2S
lElectrical characteristic curves
100
TRANSIENT
THERMAL IMPEDANCE : Rth (°C/W)
1000
PEAK SURGE
FORWARD CURRENT : IFSM(A)
Tj = 25°C
10
1
IFSM
time
0.1
1
10
Rth(j-a)
100
Rth(j-l)
10
1
0.001
100
0.01
TIME : t(ms)
IFSM-t CHARACTERISTICS
0.1
1
10
100
1000
TIME : t(s)
Rth-t CHARACTERISTICS
Io
0A
0V
VR
t
Io
0A
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
VR
t
0.8
T
0.7
D=t/T
VR=VRmax
Tj=150°C
D = 0.5
0.6
0.5
half sin wave
0.4
0.3
D = 0.2
0.2
D = 0.1
T
0.9
0V
D.C.
D.C.
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
0.9
0.1
D=t/T
VR=VRmax
Tj=150°C
0.8
0.7
D = 0.5
0.6
0.5
half sin wave
0.4
0.3
D = 0.2
0.2
D = 0.1
0.1
0.0
0.0
0
30
60
90
120
150
0
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
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© 2014 ROHM Co., Ltd. All rights reserved.
30
60
90
120
150
LEAD TEMPERATURE : Tl(°C)
DERATING CURVE (Io-Tl)
3/4
2014.09 - Rev.A
Data Sheet
RF05VAM2S
lElectrical characteristic curves
0.9
D.C.
FORWARD POWER
DISSIPATION : Pf (W)
0.8
0.7
D = 0.5
0.6
half sin wave
0.5
D = 0.2
0.4
D = 0.1
0.3
0.2
0.1
Tj = 150°C
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
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4/4
2014.09 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
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below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
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equipment, nuclear power control systems, and submarine repeaters.
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the recommended usage conditions and specifications contained herein.
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shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
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R1102A