RB160MM-90TF : Diodes

Schottky Barrier Diode
Datasheet
RB160MM-90TF
Application
AEC-Q101 Qualified
Land Size Figure (Unit : mm)
Dimensions (Unit : mm)
General rectification
0.1±0.1
0.05
1.2
Features
1) Small power mold type
3.05
3.5±0.2
0.12
2.6±0.1
0.85
1.6±0.1
PMDU
(PMDU)
2) High reliability
0.8±0.1
ROHM : PMDU
JEDEC : SOD-123FL
3) Low IR
Cathode
Structure
0.9±0.1
: Manufacture Date
Anode
Taping Dimensions (Unit : mm)
1.81±0.1
4.0±0.1
0.25±0.05
3.71±0.1
φ1.55±0.05
1.550.05
2.0±0.05
3.5±0.05
4.0±0.1
8.0±0.2
Silicon epitaxial planar type
1.75±0.1
Construction
φ1.0±0.1
1.00.1
1.5MAX
Absolute Maximum Ratings (Ta= 25°C)
Symbol
Conditions
Limits
Unit
Repetitive Peak Reverse Voltage
VRM
Duty≦0.5
90
V
Reverse Voltage (DC)
VR
Direct Reverse Voltage
90
V
Average Forward Rectified Current
Io
1
A
Forward Current Surge Peak (60Hz·1cyc)
IFSM
Glass epoxi mounted,
60Hz half sin Wave, resistive load
60Hz half sin wave, one cycle,
Non-repetitive at Ta=25°C
30
A
Tj
-
150
°C
Tstg
-
40 to 150
°C
Parameter
Operating Junction Temperature
Storage Temperature
Electrical Characteristics (Ta= 25°C)
Parameter
Symbol
Conditions
Min.
Forward Voltage
VF
IF=1.0A
-
-
0.73
V
Reverse Current
IR
VR=90V
-
-
100
A
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1/5
Typ. Max. Unit
2015.07 - Rev.A
Data Sheet
RB160MM-90TF
Electrical Characteristic Curves
10000
Tj = 150°C
Tj = 125°C
REVERSE CURRENT : IR(A)
FORWARD CURRENT : IF(A)
1
Tj = 75°C
0.1
Tj = 25°C
0.01
Tj = 25°C
0.001
1000
100
Tj = 75°C
10
1
Tj = 25°C
Tj = 25°C
0.1
0.01
0
100
200
300
400
500
600
700
0
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
10
20
30
40
50
60
70
80
90
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
650
1000
Tj = 25°C
f = 1MHz
FORWARD VOLTAGE : VF(mV)
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
Tj = 125°C
Tj = 150°C
100
10
1
Tj=25°C
IF=1A
n=30pcs
640
630
AVE. : 632.1mV
620
610
600
0
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
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VF DISPERSION MAP
2/5
2015.07 - Rev.A
Data Sheet
RB160MM-90TF
Electrical Characteristic Curves
180
Tj=25°C
VR=90V
n=30pcs
40
30
20
AVE. : 4.655A
10
160
150
140
AVE. : 149.6pF
130
120
110
100
0
IR DISPERSION MAP
Ct DISPERSION MAP
200
30
IFSM
150
1cyc
8.3ms
Ta=25°C
100
AVE. : 56.0A
50
REVERSE RECOVERY TIME : trr(ns)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
Ta=25°C
f=1MHz
VR=0V
n=10pcs
170
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
REVERSE CURRENT : IR(A)
50
0
Ta=25°C
IF=0.5A
IR=1A
Irr / IR=0.25
n=10pcs
25
20
15
AVE. : 7.40ns
10
5
0
IFSM DISPERSION MAP
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trr DISPERSION MAP
3/5
2015.07 - Rev.A
Data Sheet
RB160MM-90TF
Electrical Characteristic Curves
1000
100
PEAK SURGE
FORWARD CURRENT : IFSM(A)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
Ifsm
8.3ms 8.3ms
1cyc
50
time
Ta=25°C
100
10
1
0
1
10
0.1
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1
10
100
TIME : t(ms)
IFSM-t CHARACTERISTICS
2
1000
Rth(j-a)
100
Rth(j-c)
10
Mounted on glass epoxy board
IF=0.5A
IM=10mA
1
FORWARD POWER
DISPERSION : PF (W)
TRANSIENT
THERMAL IMPEDANCE : Rth (°C/W)
1cyc
IFSM
1.5
D = 1/2
1
Sin(θ=180)
0.5
DC
time
1ms 300s
0.1
0.001
0
0.1
10
0
1000
TIME : t(s)
Rth-t CHARACTERISTICS
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0.5
1
1.5
2
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
4/5
2015.07 - Rev.A
Data Sheet
RB160MM-90TF
Electrical Characteristic Curves
3
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
1
REVERSE POWER
DISPERSION : PR (W)
0.8
0.6
Sin(θ=180)
D = 1/2
0.4
DC
0.2
2
VR
t
T
DC
D=t/T
VR=45V
Tj=150°C
D = 1/2
1.5
1
Sin(θ=180)
0.5
0
0
0
0
10 20 30 40 50 60 70 80 90
25
50
75
100
125
150
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
30
2.5
0A
0V
2
DC
1.5
ELECTROSTATIC
DISCHARGE TEST : ESD(kV)
3
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io
0A
0V
2.5
Io
VR
t
T
D=t/T
VR=45V
Tj=150°C
D = 1/2
1
Sin(θ=180)
0.5
25
20
15
10
5
0
0
0
25
50
75
100
125
150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
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AVE. : 10.7kV
AVE. : 1.70kV
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
5/5
2015.07 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
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non-compliance with any applicable laws or regulations.
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R1102A