Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN10TB4SFH zSerise Standard Fast Recovery zDimensions(Unit : mm) zStructure 㻠㻚㻡㼼㻜㻚㻟 䚷䚷䚷㻌㻜㻚㻝 zApplications General rectification 㻞㻚㻤㼼㻜㻚㻞 䚷䚷䚷㻌㻜㻚㻝 㻡㻚㻜㼼㻜㻚㻞 RFN10T B4S ձ 㻝㻟㻚㻡㻹㻵㻺 㻝㻚㻞 㻝㻚㻟 zConstruction Silicon epitaxial planer type 㻝㻡㻚㻜㼼㻜㻚㻠 㻌㻌㻌㻌㻌䚷㻌㻜㻚㻞 㻤㻚㻜 zFeatures 1)Low switching loss 2)High current overload capacity 㻤㻚㻜㼼㻜㻚㻞 㻝㻞㻚㻜㼼㻜㻚㻞 㻝㻜㻚㻜㼼㻜㻚㻟 䚷䚷䚷㻌㻜㻚㻝 㻜㻚㻤 㻔㻝㻕 㻔㻞㻕 㻔㻟㻕 2.54d0.5 2.54d0.5 㻜㻚㻣㼼㻜㻚㻝 㻌㻌㻌㻌㻌㻌㻌㻜㻚㻜㻡 㻞㻚㻢㼼㻜㻚㻡 ROHM : TO220FN Manufacture Year Week ձ zAbsolu䡐e Maximum Ratings(Tl=25°C) Symbol Conditions Limits Unit Repetitive peak reverse voltage Parameter VRM Duty䍺0.5 430 V Reverse voltage VR Direct voltage 430 V Average rectified foward current Io 10 A IFSM Forward current surge peak Junction temperature Storage temperature 60Hz Half sin wave , Resistive load Tc=93°C 60Hz Half sin wave , Non-repetitive at Tj=25°C 80 A Tj 150 rC Tstg 55 to 150 °C zElectrical Characteristics(Tj=25°C) Parameter Conditions Min. Typ. Max. Unit VF IF=10A 䠉 1.2 1.55 V Reverse current IR VR=430V 䠉 0.05 10 μA Reverse recovery time trr IF=0.5A,IR=1A,Irr=0.25×IR 䠉 18 30 ns Rth(j-c) Junction to case 䠉 䠉 3.0 °CW Symbol Forward voltage Thermal resistance WWWROHMCOM Ú2/(-#O,TD!LLRIGHTSRESERVED 1/4 2012.06 - Rev.A RFN10TB4SFH Data Sheet 100000 100 Tj=150°C REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 10000 10 Tj=150°C Tj=125°C Tj=75°C 1 Tj=25°C Tj=125°C 1000 Tj=75°C 100 Tj=25°C 10 0.1 1 0 500 1000 1500 2000 2500 0 100 150 200 250 300 350 400 450 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 1250 1000 VR=430V IF=10A Tj=25°C 1240 Tj=25°C 1230 REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 50 1220 AVE:1181mV 1210 1200 1190 1180 100 AVE:11.6nA 10 1170 1160 1150 1 VF DISPERSION MAP IR DISPERSION MAP 200 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz 100 10 190 f=1MHz VR=0V 180 Tj=25°C 170 160 150 AVE:157pF 140 130 120 110 1 100 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/4 2012.06 - Rev.A RFN10TB4SFH Data Sheet 30 240 AVE:186A 200 180 160 140 IFSM 120 IF=0.5A IR=1.0A Irr=0.25×IR 25 RESERVE RECOVERY TIME:trr(ns) ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A) 220 Tj=25°C 20 15 AVE:18.4ns 10 5 8.3ms 1cyc. 100 0 IFSM DISPERSION MAP trr DISPERSION MAP 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 100 10 IFSM 8.3ms 8.3ms 100 10 IFSM time 1cyc. 1 1 1 10 1 100 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 5 2 1 AVE:0.57kV 0 C=200pF R=0Ω TRANSIENT AVE:2.44kV 3 Rth(j-a) 10 Rth(j-c) 1 0.1 0.001 C=100pF R=1.5kΩ 0.1 10 1000 TIME:t(s) Rth-t CHARACTERISTICS ESD DISPERSION MAP www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. THERMAL IMPEDANCE:Rth (°C/W) 100 4 ELECTROSTATIC DISCHARGE TEST ESD(kV) 10 3/4 2012.06 - Rev.A RFN10TB4SFH 30 Data Sheet 18 D.C. 16 D=0.8 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) FORWARD POWER DISSIPATION:Pf(W) 25 D=0.5 20 half sin wave 15 D=0.2 D=0.1 10 D=0.05 14 Io VR t 12 T D.C. D=0.8 10 D=t/T VR=430V Tj=150°C D=0.5 8 half sin wave 6 D=0.2 D=0.1 4 5 D=0.05 2 0 0 0 2 4 6 8 10 12 14 16 0 18 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 18 120 150 VR T 12 90 t D=0.8 14 60 Io 0V D.C. 30 AMBIENT TEMPARATURE:Ta(°C) DERATING CURVE(Io-Ta) 0A 16 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V D=t/T VR=430V Tj=150°C D=0.5 10 half sin wave 8 D=0.2 6 D=0.1 4 D=0.05 2 0 0 30 60 90 120 150 CASE TEMPARATURE:Tc(°C) DERATING CURVE(Io-Tc) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/4 2012.06 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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