SCS208AGHR : Sic Power Devices

SCS208AGHR
Data Sheet
SiC Schottky Barrier Diode
lAEC-Q101 Qualified
VR
650V
IF
8A
QC
13nC
TO-220AC
(1)
(2)
lFeatures
(3)
lInner circuit
(1)
1) Shorter recovery time
2) Reduced temperature dependence
(1) Cathode
(2) Cathode
(3) Anode
3) High-speed switching possible
(2)
(3)
lPackaging specifications
Packaging
lConstruction
Silicon carbide epitaxial planer schottky diode
Tube
Reel size (mm)
-
Tape width (mm)
-
Type
Basic ordering unit (pcs)
50
Taping code
C
Marking
SCS208AG
lAbsolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
VRM
650
V
Reverse voltage (DC)
VR
650
V
Continuous forward current
IF
8*
1
A
31*
IFSM
Surge no repetitive forward current
2
A
118*3
A
25*4
A
Repetitive peak forward current
IFRM
35*5
A
Total power disspation
PD
68*6
W
Junction temperature
Tj
175
°C
Tstg
-55 to +175
°C
Range of storage temperature
*1 Tc=139°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C
*4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C
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1/5
2014.05 - Rev.A
Data Sheet
SCS208AGHR
lElectrical characteristics (Tj = 25°C)
Values
Parameter
DC blocking voltage
Forward voltage
Reverse current
Total capacitance
Symbol
VDC
VF
IR
Conditions
Unit
Min.
Typ.
Max.
600
-
-
V
IF=8A,Tj=25°C
-
1.35
1.55
V
IF=8A,Tj=150°C
-
1.55
-
V
IF=8A,Tj=175°C
-
1.63
-
V
VR=600V,Tj=25°C
-
1.6
160
mA
VR=600V,Tj=150°C
-
24
-
mA
VR=600V,Tj=175°C
-
56
-
mA
VR=1V,f=1MHz
-
291
-
pF
VR=600V,f=1MHz
-
30
-
pF
IR =0.16mA
C
Total capacitive charge
Qc
VR=400V,di/dt=350A/ms
-
13
-
nC
Switching time
tc
VR=400V,di/dt=350A/ms
-
13
-
ns
Symbol
Conditions
lThermal characteristics
Values
Parameter
Thermal resistance
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Rth(j-c)
-
2/5
Unit
Min.
Typ.
Max.
-
1.9
2.2
°C/W
2014.05 - Rev.A
Data Sheet
SCS208AGHR
lElectrical characteristic curves
Fig.2 VF - IF Characteristics
Fig.1 VF - IF Characteristics
12
100
Pulsed
Pulsed
Forward Current : IF [A]
Forward Current : IF [A]
10
Ta=175ºC
1
Ta=125ºC
Ta=75ºC
Ta=25ºC
0.1
Ta= -25ºC
0.01
0.001
Ta=25ºC
8
Ta=75ºC
Ta=125ºC
6
Ta=175ºC
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.5
Forward Voltage : VF [V]
1.0
1.5
2.0
2.5
Forward Voltage : VF [V]
Fig.3 VR - IR Characteristics
Fig.4 VR-Ct Characteristics
100
Ta=125ºC
Ta=75ºC
10
Ta=25ºC
1
Ta= -25ºC
0.1
0.01
0.001
0
100
200
300
400
500
600
Capacitance Between Terminals : Ct [pF]
1,000
Ta=175ºC
Reverse Current : IR [mA]
Ta= -25ºC
10
Reverse Voltage : VR [V]
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100
10
Ta=25ºC
f=1MHz
1
0.01
0.1
1
10
100
1000
Reverse Voltage : VR [V]
3/5
2014.05 - Rev.A
Data Sheet
SCS208AGHR
lElectrical characteristic curves
Fig.5 Thermal Resistance vs. Pulse Width
Fig.6 Power Dissipation
80
Ta=25ºC
Single Pulse
70
60
Power Dissipation [W]
Thermal Resistance : Rth(j-c) [ºC/W]
10
1
0.1
50
40
30
20
10
0.01
0.0001 0.001 0.01
0
0.1
1
10
100
0
1000
25
Pulse Width : Pw [s]
75
100
125
150
175
Case Temperature : Tc [ºC]
Fig.7 Ip-Tc Derating Curve
Fig.8 Io-Pf Characteristics
45
40
Duty=0.1
40
Duty=0.8
Duty=0.5
Duty=0.2
35
Power Dissipation [W]
Peak Forward Current : IP [A]
50
Duty=0.2
30
25
Duty=0.5
20
15
10
Duty=0.8
D.C.
D.C.
30
Duty=0.1
20
10
5
0
0
25
50
75
100
125
150
175
0
0
Case Temperature : Tc [ºC]
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© 2014 ROHM Co., Ltd. All rights reserved.
5
10
15
Average Rectified Forward Current : Io [A]
4/5
2014.05 - Rev.A
Data Sheet
SCS208AGHR
lDimensions (Unit : mm)
TO-220AC
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© 2014 ROHM Co., Ltd. All rights reserved.
5/5
2014.05 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
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below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
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equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
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shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
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R1102B