KDZV12B : Diode

Zener Diode
Data Sheet
KDZV series
lApplication
lDimensions (Unit : mm)
Voltage regulation
lLand size figure (Unit : mm)
0.1±0.1
0.05
1.2
0.85
1.6±0.1
2.6±0.1
1) Small power mold type. (PMDU)
2) High ESD tolerance
3.5±0.12
3.5±0.2
3.05
lFeatures
PMDU
lStructure
Cathode
0.9±0.1
0.8±0.1
lConstruction
Silicon epitaxial planar
ROHM : PMDU
JEDEC : SOD-123
Manufacture Date
EX. KDZV10B
Anode
lTaping specifications (Unit : mm)
1.81±0.1
φ 1.0±0.1
1.0
 0.1
3.71±0.08
3.71±0.1
8.0±0.2
φ 1.55
1.55±0.05
 0.05
4.0±0.1
0.25±0.05
1.75±0.1
2.0±0.05
3.5±0.05
4.0±0.1
1.5MAX
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Power dissipation
P
1000
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 to +150
°C
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1/6
2015.09 - Rev.J
Data Sheet
KDZV series
lElectrical characteristics (Ta= 25°C)
Symbol
Reverse current
: IR(mA)
IZ(mA)
VR(V)
MIN.
TYP.
MAX.
MAX.
KDZV 3.6B
3.600
3.813
4.000
40.0
60.0
1.0
KDZV 3.9B
3.900
4.136
4.400
40.0
40.0
1.0
KDZV 4.3B
40.0
20.0
4.300
4.572
4.800
1.0
KDZV 4.7B
40.0
20.0
4.700
4.924
5.200
1.0
KDZV 5.1B
40.0
20.0
5.100
5.368
5.700
1.0
KDZV 5.6B
40.0
20.0
5.600
5.856
6.300
1.5
KDZV 6.2B
40.0
20.0
6.200
6.509
7.000
3.0
KDZV 6.8B
40.0
20.0
6.800
7.280
7.700
3.5
KDZV 7.5B
40.0
20.0
7.500
7.889
8.400
4.0
KDZV 8.2B
40.0
20.0
8.200
8.655
9.300
5.0
KDZV 9.1B
40.0
20.0
9.100
9.747
10.200
6.0
KDZV 10B
40.0
10.0
10.000 10.310 11.200
7.0
KDZV 11B
20.0
10.0
11.000 11.510 12.300
8.0
KDZV 12B
20.0
10.0
12.000 12.500 13.500
9.0
KDZV 13B
20.0
10.0
13.300 13.820 15.000
10.0
KDZV 15B
20.0
10.0
14.700 15.350 16.500
11.0
KDZV 16B
20.0
10.0
16.200 16.860 18.300
12.0
KDZV 18B
20.0
10.0
18.000 19.000 20.300
13.0
KDZV 20B
20.0
10.0
20.000 20.820 22.400
15.0
KDZV 22B
10.0
10.0
22.000 23.850 24.500
17.0
KDZV 24B
10.0
10.0
24.000 25.310 27.600
19.0
KDZV 27B
10.0
10.0
27.000 28.700 30.800
21.0
KDZV 30B
10.0
10.0
30.000 31.570 34.000
23.0
KDZV 33B
10.0
10.0
33.000 34.950 37.000
25.0
36.000 39.240 40.000
27.0
KDZV 36B
10.0
10.0
*The Zener voltage (Vz) is measured 40ms after power is supplied.
TYP.
Zener voltage : VZ(V)
lMARKING (TYPE NO.)
TYPE
KDZV 3.6B
KDZV 3.9B
KDZV 4.3B
KDZV 4.7B
KDZV 5.1B
KDZV 5.6B
KDZV 6.2B
KDZV 6.8B
KDZV 7.5B
KDZV 8.2B
KDZV 9.1B
KDZV 10B
KDZV 11B
TYPE NO.
GB
HB
JB
KB
LB
MB
NB
PB
QB
RB
SB
TB
UB
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TYPE
KDZV 12B
KDZV 13B
KDZV 15B
KDZV 16B
KDZV 18B
KDZV 20B
KDZV 22B
KDZV 24B
KDZV 27B
KDZV 30B
KDZV 33B
KDZV 36B
2/6
TYPE NO.
VB
WB
XB
YB
ZB
AD
BD
CD
DD
ED
FD
GD
2015.09 - Rev.J
Data Sheet
KDZV series
lElectrical characteristic curves
100
10 11 12 13 15
9.1
16
18
20
22
24
27
30
36
33
8.2
7.5
10
6.8
ZENER CURRENT : IZ(mA)
6.2
5.6
5.1
1
4.7
4.3
3.9
3.6
0.1
0.01
0.001
0
5
10
15
20
25
30
35
40
45
ZENER VOLTAGE : VZ(V)
VZ -IZ CHARACTERISTICS
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3/6
2015.09 - Rev.J
Data Sheet
KDZV series
lElectrical characteristic curves
10000
REVERS SURGE MAXIMUM
POWER : PRSM(W)
POWER DISPERSION : Pd(mW)
1200
1000
800
600
400
200
PRSM
100
0
0
25
50
75
100
125
10
0.001
150
40
0.1
35
0.08
30
0.06
25
0.04
20
0.02
15
0
10
-0.02
-0.04
5
-0.06
0
-0.08
-5
20
30
40
TEMP.COEFFICIENCE : γZ(mV/°C)
TRANSIENT THERMAL IMPEDANCE : Rth(°C/W)
TEMP.COEFFICIENCE : γZ(%/°C)
0.12
10
ZENER VOLTAGE : VZ(V)
γZ -VZ CHARACTERISTICS
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0.01
0.1
1
10
TIME : t(ms)
PRSM-TIME CHARACTERISTICS
AMBIENT TEMPERATURE : Ta(°C)
Pd-Ta CHARACTERISTICS
0
t
1000
Mounted on glass epoxy board
1000
IM=10mA
IF=100mA
time
Rth(j-a)
1ms 300ms
100
Rth(j-c)
10
1
0.001
0.01
0.1
1
10
100
1000
TIME : t(s)
Rth-t CHARACTERISTICS
4/6
2015.09 - Rev.J
Data Sheet
KDZV12B
lElectrical characteristic curves
1000
REVERSE CURRENT : IR(nA)
ZENER CURRENT : IZ(mA)
100
10
1
Ta = 150°C
0.1
Ta = 125°C
Ta = 75°C
0.01
Ta = 25°C
Ta = 150°C
100
Ta = 125°C
Ta = 75°C
10
1
Ta = 25°C
0.1
Ta = -25°C
0.01
Ta = -25°C
0.001
0.001
11 11.5 12 12.5 13 13.5 14 14.5 15
0
ZENER VOLTAGE : VZ(V)
VZ -IZ CHARACTERISTICS
1
2
3
4
5
7
8
9
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
12.8
10000
Ta=25°C
IZ=20mA
n=30pcs
ZENER VOLTAGE : VZ(V)
f = 1MHz
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
6
1000
100
12.7
AVE : 12.56V
12.6
12.5
12.4
12.3
0
1
2
3
4
5
6
7
8
9
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
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VZ DISPERSION MAP
5/6
2015.09 - Rev.J
Data Sheet
KDZV12B
lElectrical characteristic curves
1
400
Ta=25°C
VR=9.0V
n=30pcs
0.8
0.7
0.6
0.5
0.4
AVE : 0.1744nA
0.3
0.2
380
370
360
AVE : 351.0pF
350
340
330
320
0.1
310
0
300
IR DISPERSION MAP
Ct DISPERSION MAP
10000
30
No Break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(kV)
DYNAMIC IMPEDANCE : ZZ(W)
Ta=25°C
f=1MHz
VR=0V
n=10pcs
390
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
REVERSE CURRENT : IR(nA)
0.9
1000
100
10
1
25
20
15
10
5
0
0.1
1
C=100pF
R=1.5kW
C=150pF
R=330W
10
ZENER CURRENT : IZ(mA)
ZZ -IZ CHARACTERISTICS
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C=200pF
R=0W
ESD DISPERSION MAP
6/6
2015.09 - Rev.J
Notice
Notes
1) The information contained herein is subject to change without notice.
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R1102A