EDZVFH10B : Diodes

Zener Diode
Datasheet
EDZVFH series
AEC-Q101 Qualified
Land size figure (Unit : mm)
Dimensions (Unit : mm)
Application
0.8±0.05
0.8
0.12±0.05
0.6
Constant voltage control
1.2±0.05
1) Compact,2-pin mini-mold type for
high-density mounting. (EMD2)
1.6±0.1
1.7
Features
EMD2
2) High reliability.
3) Can be mounted automatically,
0.3±0.05
0.6±0.1
using chip mounter.
Structure
Cathode
ROHM : EMD2
JEDEC :SOD-523
JEITA : SC-79
Construction
EX. EDZV3.6B
Anode
Silicon epitaxial planar
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Power dissipation
P
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to 150
°C
Operating temperature
Topr
55 to 150
°C
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© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.03 - Rev.B
Data Sheet
EDZVFH series
Electical characteristics (Ta=25°C)
Symbol
TYP.
Zener voltage :Vz(V)
Operating resistance :Zz(Ω)
Rising operataing
resistance :Zz(Ω)
Reverse current :
IR(A)
MIN.
MAX.
Iz(mA)
MAX.
Iz(mA)
MAX.
Iz(mA)
MAX.
VR(V)
EDZV 3.6B
3.600
3.845
5.0
100
5.0
1000
1.0
10.0
1.0
EDZV 3.9B
3.890
4.160
5.0
100
5.0
1000
1.0
5.0
1.0
EDZV 4.3B
4.170
4.430
5.0
100
5.0
1000
1.0
5.0
1.0
100
5.0
800
0.5
2.0
1.0
80
5.0
500
0.5
2.0
1.5
200
0.5
1.0
2.5
100
0.5
1.0
3.0
3.5
EDZV 4.7B
4.550
4.750
5.0
EDZV 5.1B
4.980
5.200
5.0
60
5.0
60
5.0
60
0.5
0.5
60
0.5
0.5
4.0
5.0
EDZV 5.6B
5.490
5.730
5.0
EDZV 6.2B
6.060
6.330
5.0
40
5.0
30
5.0
60
0.5
0.5
60
0.5
0.5
6.0
7.0
8.0
EDZV 6.8B
6.650
6.930
5.0
EDZV 7.5B
7.280
7.600
5.0
30
5.0
30
5.0
60
0.5
0.1
60
0.5
0.1
9.0
EDZV 8.2B
8.020
8.360
5.0
EDZV 9.1B
8.850
9.230
5.0
30
5.0
30
5.0
EDZV 10B
9.770
10.210
5.0
EDZV 11B
10.760
11.220
5.0
EDZV 12B
11.740
12.240
5.0
30
5.0
80
0.5
0.1
EDZV 13B
12.910
13.490
5.0
37
5.0
80
0.5
0.1
10.0
EDZV 15B
14.340
14.980
5.0
42
5.0
80
0.5
0.1
11.0
EDZV 16B
15.850
16.510
5.0
50
5.0
80
0.5
0.1
12.0
EDZV 18B
17.560
18.350
5.0
80
0.5
0.1
13.0
19.520
20.390
5.0
65
85
5.0
EDZV 20B
5.0
100
0.5
0.1
15.0
EDZV 22B
21.540
22.470
5.0
100
5.0
100
0.5
0.1
17.0
EDZV 24B
23.720
24.780
5.0
120
5.0
120
0.5
0.1
19.0
EDZV 27B
26.190
27.530
2.0
150
2.0
150
0.5
0.1
21.0
EDZV 30B
29.190
30.690
2.0
200
2.0
200
0.5
0.1
23.0
EDZV 33B
32.150
35.070
33.790
36.870
2.0
250
2.0
300
2.0
250
300
0.5
0.5
0.1
2.0
0.1
25.0
27.0
EDZV 36B
(1) The zener voltage(Vz) is measured 40ms after power is supplied.
(2) The operating resistances(Zz,Zzk) are measured by superimposing a minute alternating current
on the regulated current(Iz)
MARKING (Type No.)
TYPE
TYPE
TYPE NO.
TYPE NO.
EDZV 3.6B
6 2
EDZV 12B
2 5
EDZV 3.9B
7 2
EDZV 13B
3 5
EDZV 4.3B
8 2
EDZV 15B
4 5
EDZV 4.7B
9 2
EDZV 16B
5 5
EDZV 5.1B
A 2
EDZV 18B
6 5
EDZV 5.6B
C 2
EDZV 20B
7 5
EDZV 6.2B
E 2
EDZV 22B
8 5
EDZV 6.8B
F 2
EDZV 24B
9 5
EDZV 7.5B
H 2
EDZV 27B
A 5
EDZV 8.2B
J 2
EDZV 30B
C 5
EDZV 9.1B
L 2
EDZV 33B
E 5
EDZV 10B
0 5
EDZV 36B
EDZV 11B
1 5
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© 2015 ROHM Co., Ltd. All rights reserved.
F 5
2/5
2015.03 - Rev.B
Data Sheet
EDZVFH series
10
ZENER CURRENT:Iz(mA)
1
0.1
4.7
0.01
7.5
5.1 5.6
4.3
8.2
6.8
3.9
9.1 10
6.2
11
3.6
12
15
13
16
18
22
20
24
33
30
27
36
0.001
0
5
10
15
20
25
30
35
40
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
POWER DISSIPATION:Pd(mW)
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE:Ta(°C)
Pd-Ta CHARACTERISTICS
40
0.1
%/°C
1000
Mounted on epoxy board
0.06
30
0.04
25
0.02
20
0
15
mV/°C
-0.02
10
-0.04
5
-0.06
0
-5
-0.08
0
10
20
30
Rth(j-a)
Rth(j-c)
100
10
0.001
40
ZENER VOLTAGE:Vz(V)
γz-Vz CHARACTERISTICS
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TRANSIENT
THAERMAL IMPEDANCE:Rth (°C/W)
35
TEMP.COEFFICIENCE:γz(mV/°C)
TEMP.COEFFICIENCE:γz(%/°C)
0.08
0.01
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
3/5
2015.03 - Rev.B
Data Sheet
EDZVFH10B
1000
10
Ta=125°C
1
REVERSE CURRENT:IR (pA)
ZENER CURRENT:Iz(mA)
100
Ta=125°C
Ta=75°C
0.1
Ta=25°C
Ta=25°C
0.01
Ta=75°C
10
Ta=25°C
1
0.1
0.001
0.01
9
9.5
10
10.5
11
0
ZENER VOLTAGE:Vz(V)
VzIz CHARACTERISTICS
2
4
8
REVERSE VOLTAGE:VR(V)
VRIR CHARACTERISTICS
100
10.2
f=1MHz
Ta=25°C
IZ=5mA
n=30pcs
ZENER VOLTAGE:Vz(V)
10.1
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
6
10
10.0
9.9
AVE:9.996V
9.8
1
0
2
4
6
9.7
8
Vz DISRESION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
10
20
REVERSE CURRENT:IR(pA)
8
7
6
5
4
3
2
AVE:1.053pA
19
CAPACITANCE
BETWEENTERMINALS:Ct(pF)
Ta=25°C
VR=7.0V
n=30pcs
9
Ta=25°C
f=1MHz
VR=0V
n=10pcs
18
17
16
AVE:17.4pF
15
14
13
12
1
11
0
10
Ct DISRESION MAP
IR DISRESION MAP
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© 2015 ROHM Co., Ltd. All rights reserved.
4/5
2015.03 - Rev.B
Data Sheet
EDZVFH10B
30
1000
No break at 30kV No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD [kV]
DYNAMIC IMPEDANCE:Zz(Ω)
25
100
10
1
20
15
AVE:13.8kV
10
5
0
0.1
1
10
C=200pF
R=0Ω
ZENER CURRENT(mA)
ZzIz CHARACTERISTICS
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© 2015 ROHM Co., Ltd. All rights reserved.
C=150pF
R=330Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
5/5
2015.03 - Rev.B
Notice
Notes
1) The information contained herein is subject to change without notice.
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provided only to illustrate the standard usage and operations of the Products. The peripheral
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R1102A