AME8855 High PSRR, Low Noise, 600mA CMOS

AME
AME8855
n General Description
The AME8855 family of positive, CMOS linear regulators provide low dropout voltage([email protected]), low
quiescent current, and low noise CMOS LDO. These
rugged devices have both Thermal Shutdown, and Current limit to prevent device failure under the "Worst" of
operating conditions.
High PSRR, Low Noise, 600mA
CMOS Regulator
n Typical Application
IN
IN
EN
AME8855
OUT
OUT
GND
COUT
1µF
CIN
1µF
n Features
l
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Low Dropout Voltage: [email protected]
Guaranteed Current: 600mA
Quiescent Current: 60µA (typ.)
Over-Temperature Shutdown
Current Limiting protection
PSRR:[email protected]
Ultra-Low-Noise: 100µVRMS at 1Hz to 100KHz
Low Temperature Coefficient
Input Voltage Range 2.8V~5.5V
Output Voltage Range: 0.8V ~ 4.3V
Green Products Meet RoHS Standards
n Functional Block Diagram
IN
OUT
Overcurrent
Shutdown
Thermal
Shutdown
EN
n Applications
l
l
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Rev. C.03
Instrumentation
Portable Electronics
Wireless Devices
Cordless Phones
PC Peripherals
Battery Powered Widgets
R1
AMP
+
R2
Vref
GND
1
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855
n Pin Configuration
3 Pin
SOT-223
Top View
AME8855-AGTxxx
1. IN
2. GND (TAB)
3. OUT
AME8855
1
2
SOT-223
Top View
3
* Die Attach:
Conductive Epoxy
SOT-89
Top View
2
AME8855
1
2
3
* Die Attach:
Non-Conductive Epoxy
SOT-89
Top View
AME8855-AFTxxx
1. IN
2. GND (TAB)
3. OUT
AME8855
1
AME8855-BGTxxx
1. GND
2. OUT (TAB)
3. IN
3
* Die Attach:
Conductive Epoxy
AME8855-BFTxxx
1. GND
2. OUT (TAB)
3. IN
AME8855
1
2
3
* Die Attach:
Non-Conductive Epoxy
SOT-89
Top View
AME8855-CFTxxx
1. GND
2. IN (TAB)
3. OUT
AME8855
1
2
2
3
* Die Attach:
Non-Conductive Epoxy
Rev. C.03
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855
n Pin Configuration (Contd.)
3 Pin
SOT-23
Top View
SOT-23
Top View
AME8855
AME8855-AETxxx
1. IN
2. GND
3. OUT
1
* Die Attach:
Non-Conductive Epoxy
3
2
5 Pin
AME8855
AME8855-BETxxx
1. GND
2. OUT
3. IN
1
* Die Attach:
Non-Conductive Epoxy
3
2
8 Pin
SOP-8
Top View
SOT-25
Top View
5
4
AME8855
1
2
3
AME8855-AEVxxx
1. IN
2. GND
3. EN
4. NC
5. OUT
* Die Attach:
Conductive Epoxy
8
7
6
5
AME 8855
1
2
3
4
AME8855-AHAxxx
1. IN
2. GND
3. GND
4. OUT
5.
6.
7.
8.
NC
GND
GND
EN
* Die Attach:
Conductive Epoxy
Rev. C.03
3
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855
n Pin Description
SOT-223
Pin Number
Pin Name
Pin Description
A
B
1
3
IN
2
1
GND
Ground connection pin.
3
2
OUT
LDO voltage regulator output pin; should be decoupled with a
1.0 F or greater value low ESR ceramic capacitor.
Input voltage pin; should be decoupled with 1 F or greater
capacitor.
SOT-89
Pin Number
Pin Name
Pin Description
A
B
C
1
3
2
IN
2
1
1
GND
Ground connection pin.
3
2
3
OUT
LDO voltage regulator output pin; should be decoupled with a
1.0 F or greater value low ESR ceramic capacitor.
Input voltage pin; should be decoupled with 1 F or greater
capacitor.
SOT-23
Pin Number
4
Pin Name
Pin Description
A
B
1
3
IN
2
1
GND
Ground connection pin.
3
2
OUT
LDO voltage regulator output pin; should be decoupled with a
1.0 F or greater value low ESR ceramic capacitor.
Input voltage pin; should be decoupled with 1 F or greater
capacitor.
Rev. C.03
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855
n Pin Configuration
SOP-25
Pin Number
Pin Name
1
IN
2
GND
Pin Description
Input voltage pin; should be decoupled with 1 F or greater
capacitor.
Ground connection pin.
3
EN
Enable pin, Active “high". When pulled “low”, the PMOS pass
transistor turns off, current consuming less than 1 A. When EN pin
floating outside, it’s weakly pulled high from internal MOS .
4
NC
No connection.
5
OUT
Pin Number
Pin Name
1
IN
2
GND
Ground connection pin.
3
GND
Ground connection pin.
4
OUT
LDO voltage regulator output pin; should be decoupled with a
1.0 F or greater value low ESR ceramic capacitor.
5
NC
No connection.
6
GND
Ground connection pin.
7
GND
Ground connection pin.
8
EN
LDO voltage regulator output pin; should be decoupled with a
1.0 F or greater value low ESR ceramic capacitor.
SOP-8
Rev. C.03
Pin Description
Input voltage pin; should be decoupled with 1 F or greater
capacitor.
Enable pin, Active “high". When pulled “low”, the PMOS pass
transistor turns off, current consuming less than 1 A. When EN pin
floating outside, it’s weakly pulled high from internal MOS .
5
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855
n Ordering Information
AME8855 - x x x xxx
Output Voltage
Number of Pins
Package Type
Pin Configuration
Pin Configuration
A
(SOT-223)
(SOT-23)
1. IN
2. GND
3. OUT
(SOT-89)
B
(SOT-223)
(SOT-23)
1. GND
2. OUT
3. IN
(SOT-89)
C
(SOT-89)
A
(SOT-25)
A
(SOP-8)
6
1. GND
2. IN
3. OUT
Package Type
E:
F:
G:
H:
SOT-2X
SOT-89
SOT-223
SOP
Number of Pins
A: 8
T: 3
V: 5
Output Voltage
080:
090:
100:
110:
0.8V
0.9V
1.0V
1.1V
120:
130:
140:
150:
:
:
420:
430:
1.2V
1.3V
1.4V
1.5V
:
:
4.2V
4.3V
1. IN
2. GND
3. EN
4. BYP
5. OUT
1. IN
2. GND
3. GND
4. OUT
5. NC
6. GND
7. GND
8. EN
Rev. C.03
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855
n Absolute Maximum Ratings
Parameter
Maximum
Unit
Input Voltage
-0.3 to 6
V
EN Voltage
-0.3 to 6
V
Output Current
PD/(VIN-VOUT)
mA
Output Voltage
GND-0.3 to VIN+0.3
V
HBM
2
kV
MM
200
V
ESD Classification
Caution: Stress above the listed in absolute maximum ratings may cause permanent damage to the device.
n Recommended Operating Conditions
Parameter
Symbol
Rating
Ambient Temperature Range
TA
- 40 to +85
o
C
Junction Temperaturen Range
TJ
- 40 to +125
o
C
Storage Temperaturen Range
TSTG
- 65 to +150
o
C
Rev. C.03
Unit
7
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855
n Thermal Information
Parameter
Package
SOT-89
Thermal Resistance*
(Junction to Case)
SOT-223
Maximum
Conductive Epoxy
40
Non-Conductive Epoxy
46
Conductive Epoxy
25
Non-Conductive Epoxy
θ JC
31
Non-Conductive Epoxy
140
SOT-25
Conductive Epoxy
81
SOP-8
Conductive Epoxy
60
Conductive Epoxy
180
Non-Conductive Epoxy
180
Conductive Epoxy
120
SOT-223
Non-Conductive Epoxy
θJA
135
SOT-23
Non-Conductive Epoxy
280
SOT-25
Conductive Epoxy
260
SOP-8
Conductive Epoxy
150
Conductive Epoxy
550
Non-Conductive Epoxy
550
Conductive Epoxy
900
SOT-89
Internal Power Dissipation
Symbol
SOT-23
SOT-89
Thermal Resistance
(Junction to Ambient)
Die Attach
SOT-223
Non-Conductive Epoxy
PD
800
SOT-23
Non-Conductive Epoxy
400
SOT-25
Conductive Epoxy
400
SOP-8
Conductive Epoxy
810
Unit
o
C/W
o
C/W
mW
Maximum Junction Temperature
150
o
C
Lead Temperature (Soldering, 10Sec.)**
260
o
C
* Measure θJC on backside center of molding compound if IC has no tab.
** MIL-STD-202G 210F
8
Rev. C.03
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855
n Electrical Specifications
VIN=VOUT(NOM) +1V, (for VOUT<2V, VIN=2.8V), IOUT=1mA, and COUT=1µF, CIN=1µF unless otherwise noted.
Typical values are at TA=25oC.
Parameter
Input Voltage
Output Accuracy
Output Voltage Range
Dropout Voltage
(Note 1)
Output Current
Quiescent Current
Symbol
VIN
VOUT,ACC
VDROP
Rev. C.03
Min
Max
Units
2.8
5.5
V
-2.0
2.0
%
0.8
4.3
V
Note2
IOUT=600mA, 2.0V<VOUT(NOM)2.8V
850
IOUT
IQ
REGLINE
REGLOAD
Typ
IOUT=600mA, 0.8VVOUT(NOM)2.0V
IOUT=600mA, 2.8V<VOUT(NOM)
Load Regulation
∆VOUT
× 100%
VOUT
∆I OUT
IOUT=1mA
VOUT
Line Regulation
∆VOUT
× 100%
∆V IN
VOUT
Test Condition
420
mV
650
600
mA
IOUT=0mA
60
90
IOUT=1mA, 0.8VVOUT1.2V,
2.8VVIN3.5V
0.125
0.25
IOUT=1mA, 1.2V<VOUT2.0V,
2.8VVIN3.5V
0.1
0.2
IOUT=1mA, 2.0V<VOUT4.2V,
VIN(MIN)VINVIN(MIN)+1V
0.05
0.1
IOUT=1mA, 4.2V<VOUT4.5V,
VIN(MIN)VIN5.5V (Note2)
0.05
0.1
1mAIOUT600mA
0.8VVOUT(NOM)1.2V
1.5
3
1mAIOUT600mA
1.2VVOUT(NOM)2.0V
1.25
2.5
1mAIOUT600mA
2.0V<VOUT(NOM)
1.0
2.0
µA
%/V
%/A
9
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855
n Electrical Specifications (Contd.)
Parameter
Power Supply
Rejection Ration
Symbol
PSRR
Test Condition
COUT=1uF, VOUT=0.8V
IOUT=10mA
VIN=2.8V
Min
Typ
F=100Hz
60
F=1KHz
60
F=10KHz
60
Max
dB
Output Voltage Noise
eN
IOUT=10mA, VOUT=0.8V,
f=1Hz to 100KHz
Enable High (Enabled)
VEN,HI
VIN(MIN)VIN5.5V
1.4
VIN
Enable Low (Shutdown)
VEN,LO
VIN(MIN)VIN5.5V
0
0.4
IEN,HI
VEN=VIN
1
IEN,LO
VEN=0V
2
ISHDN
VIN=5.0V, VEN=0V
VOUT,SD
IOUT=0.4mA, VEN=0V
Output Current Limit
ILIM
VOUT=0.9 x VOUT(NOM)
Short-Circuit Current
ISC
VOUT0.6V
300
Thermal Shutdown
Temperature
TSHDN
Shutdown, temperature increasing
150
Thermal Shutdown
Hysteresis
TSHDN(HYS)
Enable Input Bias Current
Shutdown Current
Shutdown Output Voltage
µVRMS
100
0.1
Units
V
µA
1
µA
0.4
V
Protection
750
mA
o
C
20
Note1: Dropout Voltage is measured at VOUT=VOUT(NOM)x98%
Note2:For VOUT below 2.0V, Dropout Voltage is the Input(MIN) Voltage to Output Voltage differential.
10
Rev. C.03
AME
AME8855
n Detailed Description
The AME8855 family of CMOS regulators contain a
PMOS pass transistor, voltage reference, error amplifier,
over-current protection thermal shutdown, and Power Good
detection circuitry.
The P-channel pass transistor receives data from the
error amplifier, over-current shutdown, and thermal protection circuits. During normal operation, the error amplifier compares the output voltage to a precision reference.
Over-current and Thermal shutdown circuits become active when the junction temperature exceeds 150oC, or
the current exceeds 600mA. During thermal shutdown,
the output voltage remains low. Normal operation is restored when the junction temperature drops more 20oC.
High PSRR, Low Noise, 600mA
CMOS Regulator
Capacitor Selection and Regulator Stability
The maximum output power of the AME8855 is limited
by the maximum power dissipation of the package. By
calculation the power dissipation of the package as a
function of the input voltage, output voltage and output
current, the maximum input voltage can be obtained. The
maximum power dissipation should not exceed the
package’ s maximum power rating.
PMAX = (VIN(MAX)-VOUT) x IOUT
Where:
VIN(MAX) = maximum input voltage
PMAX = maximum power dissipation of the package
Capacitor Selection and Regulator Stability
The AME8855 is stable with an output capacitor to
ground of 1µF or greater. Ceramic capacitors have the
lowest ESR, and will offer the best AC performance. Conversely, Aluminum Electrolytic capacitors exhibit the highest ESR, resulting in the poorest AC response. Unfortunately, large value ceramic capacitors are comparatively
expensive. One option is to parallel a 0.1µF ceramic
capacitor with a 10µF Aluminum Electrolytic. The benefit
is low ESR, high capacitance, and low overall cost.
A second capacitor is recommended between the input and ground to stabilize VIN. The input capacitor should
be at least 0.1µF to have a beneficial effect.
Enable Pin
The Enable Pin is Active High. When activated pulled
low, the MOS pass transistor shuts off, and all internal
circuits are powered down. In this state, the stand by
current is than 1µA. When EN pin float outside, It's pulled
high.
Rev. C.03
11
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855
n Characterization Curve
Output Voltage
Output Voltage
1.05
1.05
1.04
V IN = 2.8V, VOUT = 1V, IOUT = 1mA
1.03
Output Voltage (V)
Output Voltage (V)
1.03
1.02
1.01
1.00
0.99
0.98
1.02
1.01
1.00
0.99
0.98
0.97
0.97
0.96
0.96
0.95
-40
VIN = 2.8V, VOUT = 1V, I OUT = 600mA
1.04
-25
-10
5
20
35
50
65
80
95
110
0.95
-40
125
-25
-10
50
Output Voltage
Output Voltage (V)
Output Voltage (V)
80
95
110
125
95
110
125
95
110
125
4.40
4.35
4.30
4.25
4.35
4.30
4.25
4.20
4.20
-25
-10
5
20
35
50
65
80
95
110
4.15
-40
125
-25
-10
5
20
35
50
65
80
Temperature ( C)
Temperature (oC)
Quiescent Current
Quiescent Current
o
100
100
VOUT = 1V
90
Quiescent Current (µA)
90
Quiescent Current (µA)
65
VIN = 5.5V, V OUT = 4.3V, IOUT = 600mA
VIN = 5.5V, VOUT = 4. 3V, IOUT = 1mA
80
70
60
50
40
30
20
10
VOUT = 4.3V
80
70
60
50
40
30
20
10
-20
-10
5
20
35
50
65
Temperature (oC)
12
50
Output Voltage
4.40
0
-40
35
4.45
4.45
4.15
-40
20
Temperature (oC)
Temperature (oC)
80
95
110
125
0
-40
-25
-10
5
20
35
50
65
80
Temperature (oC)
Rev. C.03
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855
n Characterization Curve (Contd.)
Current Limit vs Input Voltage
Current Limit vs Input Voltage
1600
1600
VOUT =4.3V
V OUT = 1V
1400
Current Limit (mA)
Current Limit (mA)
1400
1200
1000
1200
1000
800
800
600
2.8
3. 8
4.8
600
5.5
5.3
5.4
5.5
Input Voltage (V)
Input Voltage (V)
Dropout Voltage
Stability vs. ESR vs. Load Current
700
10.00
VOUT = 4.3V
Stability of Stable ESR (Ω)
Dropout Voltage (mV)
600
500
400
300
200
-40
Stable Range
0. 01
-25
-10
5
20
35
50
65
80
95 110
125
100
150
200
250
Load Current
Short Circuit Current Protection
Short Circuit Current Protection
VOU T = 1V
700
600
500
400
300
2.8
50
Unstable Range
Temperature (oC)
800
200
VIN = 5V
C IN = COUT= 1µF / X7R
0.00
0
Short Circuit Current Protection (mA)
Short Circuit Current Protection (mA)
0.10
0.005
100
3.8
Input Voltage (V)
Rev. C.03
Unstable Range
1.00
4. 8
5.5
300
800
VOUT = 1V
700
600
500
400
300
200
5.5
5.3
Input Voltage (V)
13
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855
n Characterization Curve (Contd.)
Line Transient Response
TA = -40 OC , VOU T = 1V , IOUT = 10mA
VIN
(1V/DIV)
Line Transient Response
TA = -40 OC , VOUT = 4.3V , IOUT = 10mA
5.5V
5.5V
V IN
(1V/DIV)
4.8V
2.5V
20m V
VOUT
(20mV/DIV)
0
20mV
V OUT
(20mV/DIV)
0
-20mV
-20mV
20µS / DIV
20µS / DIV
Line Transient Response
Line Transient Response
O
TA = -40 OC , VOUT = 4.3V , I OUT = 600mA
TA = 25 C , VOUT = 4.3V , I OUT = 10mA
5.5V
VIN
(1V/DIV)
4.8V
V IN
(1V/DIV)
5.5V
4.8V
20m V
VOUT
(20mV/DIV)
0
-20mV
20mV
0
V OUT
(20mV/DIV)
-20mV
20µS / DIV
20µS / DIV
Line Transient Response
Line Transient Response
TA = 125 OC , V OUT =1V , IOUT = 10mA
TA = 125 OC , V OUT =4.3V , IOUT = 10mA
5.5V
VIN
(1V/DIV)
5.5V
V IN
(1V/DIV)
4.8V
2.5V
20mV
VOUT
(20mV/DIV)
0
20m V
V OUT
(20mV/DIV)
0
-20m V
20µS / DIV
14
-20mV
20µS / DIV
Rev. C.03
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855
n Characterization Curve (Contd.)
Line Transient Response
Line Transient Response
TA = -40 OC , VOUT = 1V , IOUT = 600 mA
TA = -40 OC , VOUT = 4.3V , I OUT = 600mA
5.5V
V IN
(1V/DIV)
5.5V
V IN
(1V/DIV)
4.8V
2.5V
20mV
V OUT
(20mV/DIV)
0
20m V
VOUT
(20mV/DIV)
0
-20mV
-20mV
20µS / DIV
20µS / DIV
Line Transient Response
Line Transient Response
O
TA = 25 OC , V OUT = 1V , IOUT = 600 mA
TA = 25 C , V OUT =4.3V , IOUT = 600mA
5.5V
4.8V
5.5V
V IN
(1V/DIV)
4.8V
VIN
(1V/DIV)
20mV
20mV
VOUT
(20mV/DIV)
0
VOUT
(20mV/DIV)
0
-20mV
-20mV
20µS / DIV
20µS / DIV
Line Transient Response
Line Transient Response
O
TA = 125 C , VOU T =1V , I OUT = 600mA
O
5.5V
VIN
(1V/DIV)
T A = 125 C , V OUT =4.3V , IOUT = 600mA
5.5V
V IN
(1V/DIV)
4.8V
2.5V
40mV
20mV
VOUT
(20mV/DIV)
0
20m V
VOUT
(20mV/DIV)
0
-20m V
-20mV
20µS / DIV
Rev. C.03
20µS / DIV
-40mV
15
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855
n Characterization Curve (Contd.)
Load Transient Response
Load Transient Response
O
TA = -40 C , VOUT =1V , IOUT = 10~600mA
TA = -40 OC , V OUT =4.3V , IOUT = 10~600 mA
20mV
VOUT
(20mV/DIV)
0
-20mV
20mV
V OUT
(20mV/DIV)
0
-20mV
600mA
IOUT
(200mA/DIV)
10mA
600mA
IOUT
(200mA/DIV)
10mA
Time (20µSec/DIV)
Time (20µSec/DIV)
Load Transient Response
Load Transient Response
TA = 25 OC , VOUT =1V , I OUT = 10~600 mA
VOUT
(20mV/DIV)
O
TA = 25 C , VOUT =4.3V , IOUT = 10~600mA
20mV
0
VOUT
(20mV/DIV)
0
-20mV
-20mV
600mA
600mA
IOUT
(200mA/DIV)
10mA
IOUT
(200mA/DIV)
10mA
Time (20µSec/DIV)
Time (20µSec/DIV)
Load Transient Response
Load Transient Response
TA = 125 OC , VOUT =4.3V , IOUT = 10~600mA
TA = 125 OC , VOUT =1V , I OUT = 10~600 mA
20mV
VOUT
(20mV/DIV)
0
IOUT
(200mA/DIV)
16
20mV
VOUT
(20mV/DIV)
0
-20mV
-20mV
600mA
600mA
10mA
Time (20µSec/DIV)
20mV
IOUT
(200mA/DIV)
10mA
Time (20µSec/DIV)
Rev. C.03
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855
n Characterization Curve (Contd.)
Chip Enable Transient Response
1
Chip Enable Transient Response
1
V OUT = 1V
IOUT = 0mA
2
40µS/DIV
10µS/DIV
1) EN= 2V/Div
2) VOUT= 2V/Div
1) EN= 2V/Div
2) VOUT= 500mV/Div
Chip Enable Transient Response
1
Chip Enable Transient Response
1
V OUT = 1V
I OUT = 600mA
2
10µS/DIV
1) EN= 1V/Div
2) VOUT= 500mV/Div
Rev. C.03
VOUT = 4.3V
IOUT = 0mA
2
V OUT = 4.3V
I OU T = 600mA
2
40µS/DIV
1) EN= 2V/Div
2) VOUT= 2V/Div
17
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855
n Characterization Curve (Contd.)
Shut Down Curve Output Voltage
1
Shut Down Curve Output Voltage
1
2
2
VOUT = 1V
I OUT = 0mA
40µS/DIV
1) EN= 1V/Div
2) VOUT= 500mV/Div
V OUT = 1V
IOUT = 600mA
4µS/DIV
1) EN= 1V/Div
2) VOUT= 500mV/Div
Shut Down Curve Output Voltage
Shut Down Curve Output Voltage
1
1
2
2
VOUT = 4.3V
IOUT = 0mA
40µS/DIV
VOUT = 4.3V
IOUT = 600 mA
20µS/DIV
1) EN= 2V/Div
2) VOUT= 2V/Div
1) EN= 2V/Div
2) VOUT= 2V/Div
PSRR vs Frequency
100
90
80
PSRR (dB)
70
60
50
40
30
20
10
0
100
18
VOUT = 4.3V
IOUT = 10mA
1K
10K
Frequency (Hz)
100K
1M
Rev. C.03
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855
n Tape and Reel Dimension
SOT-223
P0
W
AME
AME
PIN 1
P
Carrier Tape, Number of Components Per Reel and Reel Size
Package
Carrier Width (W)
Pitch (P)
Pitch (P0)
Part Per Full Reel
Reel Size
SOT-223
12.0±0.1 mm
8.0±0.1 mm
4.0±0.1 mm
2500pcs
330±1 mm
SOP-8
P0
PIN 1
W
AME
AME
P
Carrier Tape, Number of Components Per Reel and Reel Size
Package
Carrier Width (W)
Pitch (P)
Pitch (P0)
Part Per Full Reel
Reel Size
SOP-8
12.0±0.1 mm
8.0±0.1 mm
4.0±0.1 mm
2500pcs
330±1 mm
Rev. C.03
19
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855
n Tape and Reel Dimension (Contd.)
SOT-89
P0
W
AME
AME
PIN1
P
Carrier Tape, Number of Components Per Reel and Reel Size
20
Package
Carrier Width (W)
Pitch (P)
Pitch (P0)
Part Per Full Reel
Reel Size
SOT-89
12.0±0.1 mm
8.0±0.1 mm
4.0±0.1 mm
1000pcs
180±1 mm
Rev. C.03
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855
n Tape and Reel Dimension (Contd.)
SOT-23
P0
W
AME
AME
PIN 1
P
Carrier Tape, Number of Components Per Reel and Reel Size
Package
Carrier Width (W)
Pitch (P)
Pitch (P0)
Part Per Full Reel
Reel Size
SOT-23
8.0±0.1 mm
4.0±0.1 mm
4.0±0.1 mm
3000pcs
180±1 mm
SOT-25
P0
W
AME
AME
PIN 1
P
Carrier Tape, Number of Components Per Reel and Reel Size
Package
Carrier Width (W)
Pitch (P)
Pitch (P0)
Part Per Full Reel
Reel Size
SOT-25
8.0±0.1 mm
4.0±0.1 mm
4.0±0.1 mm
3000pcs
180±1 mm
Rev. C.03
21
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855
n Package Dimension
SOT-223
Top View
Side View
D
B1
C
13 o(4X)
H
E
PIN 1
K
e
Front View
13 o(4X)
F
A1
B
n Lead Pattern
n Lead Pattern
6.00 BSC
2.20 BSC
4.00 BSC
1.20 BSC
Note:
1. Lead pattern unit description:
BSC: Basic. Represents theoretical exact dimension
2.20 BSC
or dimension target.
2. Dimensions in Millimeters.
3. General tolerance +0.05mm unless otherwise specified.
2.30 BSC
22
2.30 BSC
Rev. C.03
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855
n Package Dimension (Contd.)
SOP-8
Top View
Side View
C
E
H
L
PIN 1
D
Front View
o
e
A
A1
A2
7 (4X)
B
Rev. C.03
23
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855
n Package Dimension (Contd.)
SOT-89
TOP VIEW
SIDE VIEW
D
H
D1
SYMBOLS
E
A
3'
10'
C
S1
e
INCHES
MIN
MAX
MIN
MAX
1.39
1.60
0.0547
0.0630
A1
A1
PIN 1
MILLIMETERS
0.8 REF
0.0315 REF
C
0.35
0.44
0.0138
0.0173
D
4.39
4.60
0.1728
0.1811
D1
1.35
1.85
0.0531
0.0728
E
2.28
2.60
0.0898
0.1024
I
0.32
0.56
0.0126
0.0220
e
3.00 REF
0.1181 REF
A
H
0.70 REF
0.0276 REF
S1
1.50 REF
0.0591 REF
I
FRONT VIEW
n Lead Pattern
2.600 BSC
4.400 BSC
3.200 BSC
1.400 BSC
1.900 BSC
45oC
Note:
2.800 BSC
1. Lead pattern unit description:
BSC: Basic. Represents theoretical exact dimension
or dimension target.
2. Dimensions in Millimeters.
1.800 BSC
1.600 BSC
3. General tolerance +0.05mm unless otherwise specified.
3.000 BSC
24
Rev. C.03
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855
n Package Dimension (Contd.)
SOT-25
Top View
Side View
D
E
H
L
PIN 1
S1
e
A1
A
Front View
b
n Lead Pattern
2.40 BSC
1.00 BSC
0.70 BSC
Note:
1. Lead pattern unit description:
BSC: Basic. Represents theoretical exact dimension
or dimension target.
0.95 BSC
0.95 BSC
2. Dimensions in Millimeters.
3. General tolerance +0.05mm unless otherwise specified.
1.90 BSC
Rev. C.03
25
AME
High PSRR, Low Noise, 600mA
CMOS Regulator
AME8855
n Package Dimension (Contd.)
SOT-23
Top View
Side View
D
E
H
L
e
PIN 1
A
Front View
A1
b
n Lead Pattern
2.40 BSC
1.00 BSC
0.80 BSC
Note:
1. Lead pattern unit description:
BSC: Basic. Represents theoretical exact dimension
or dimension target.
2. Dimensions in Millimeters.
1.90 BSC
26
3. General tolerance +0.05mm unless otherwise specified.
Rev. C.03
www.ame.com.tw
E-Mail: [email protected]
Life Support Policy:
These products of AME, Inc. are not authorized for use as critical components in life-support
devices or systems, without the express written approval of the president
of AME, Inc.
AME, Inc. reserves the right to make changes in the circuitry and specifications of its devices and
advises its customers to obtain the latest version of relevant information.
 AME, Inc. , August 2014
Document: TM001-DS8855-C.03
Corporate Headquarter
AME, Inc.
8F, 12, WenHu St., Nei Hu
Taipei, Taiwan. 114
Tel: 886 2 2627-8687
Fax: 886 2 2659-2989