AME5145/DC-DC Boost Converter

AME
AME5145
n General Description
1.6 MHz Boost Converter With
30V Internal FET Switch
n Typical Application
The AME5145 switching regulator is current-mode boost
converters operating at fixed frequency of 1.6 MHz.
The use of SOT-25/TSOT-25, DFN-8C & MSOP-8 packages, made possible by the minimal power loss of the
internal 1.8A switch, and use of small inductor and capacitors result in the industry's highest power density.
The 30V internal switch makes these solutions perfect
for boosting to voltages up to 30V.
These parts have a logic-level shutdown pin that can
be used to reduce quiescent current and extend battery
life. Protection is provided through cycle-by-cycle current limiting and thermal shutdown. Internal compensation simplifies and reduces component count.
L/6.8µH
D1
VIN
IN
EN
R3
51K
AME5145
EN
l 1.6 MHz Switching Frequency
l Low RDSON DMOS FET
l Switch Current Up to 1.8A
R1
43K
GND
C1
4.7µF
R2
13.3K
GND
CF
680pF
C2
22µF
Figure 1. 4.2V to 5V Boost Converter
L/10µH
D1
VIN
IN
EN
R3
51K
VOUT
SW
12V
400mA
5V
AME5145
EN
l Wide Input Voltage Range (2.7V-5.5V)
FB
R1
117K
GND
l Low Shutdown Current (<1µA)
C1
4.7µF
l SOT-25/TSOT-25, DFN-8C & MSOP-8 Packages
l Uses Tiny Capacitors and Inductor
FB
VOUT
5V
800mA
4.2V
n Features
l 30V DMOS FET Switch
SW
R2
13.3K
GND
CF
220pF
C2
4.7µF
l Cycle-by-Cycle Current Limiting
l All AME's Lead Free Products Meet RoHS
Figure 2. 5V to 12V Boost Converter
Standards
n Applications
l White LED Current Source
l PDA's and Palm-Top Computers
L/10µH
IN
SW
EN
R3
51K
AME5145
EN
l Local Boost Regulator
FB
VOUT
18V
250mA
5V
l Digital Cameras
l Portable Phones and Games
D1
V IN
R1
183K
GND
C1
4.7µF
GND
R2
13.3K
CF
160pF
C2
4.7µF
Figure 3. 5V to 18V Boost Converter
Rev.B.01
1
AME
1.6 MHz Boost Converter with
30V Internal FET Switch
AME5145
n Function Block Diagram
EN
SW
VIN
SHUTDOWN
CIRCUITRY
R5
THERMAL
SHUTDOWN
R6
+
Q1
Q2X8
-
R
+
Gm
RAMP
GENERATOR
FB
Σ
-
Q
R
DRIVER
R
S
RC
R3
oscillator
CURRENT
LIMIT
COMP
CC
+
R4
-
GND
Figure 4. Functional Block Diagram
2
Rev.B.01
AME
1.6 MHz Boost Converter With
30V Internal FET Switch
AME5145
n Pin Configuration
SOT-25/TSOT-25
Top View
5
MSOP-8
Top View
AME5145AEEV
4
AME5145
8
7
6
5
1. SW
1. IN
2. GND
2. EN
3. FB
3. GND
4. EN
AME5145
5. IN
1
2
AME5145AEQA
4. FB
5. SW
3
6. SW
7. GND
8. GND
1
* Die Attach:
Conductive Epoxy
2
3
4
* Die Attach:
Conductive Epoxy
DFN-8C
(3mmx3mmx0.75mm)
Top View
AME5145AEVA
8
7
6
5
1. NC
2. FB
3. NC
4. SW
AME5145
5. NC
6. IN
1
2
3
4
7. EN
8. NC
* Die Attach:
Conductive Epoxy
Note: The trapezoid area enclosed by dashed line represents Exposed Pad and is GND.
Rev.B.01
3
AME
1.6 MHz Boost Converter with
30V Internal FET Switch
AME5145
n Pin Description (Continued)
AME5145AEEV SOT-25/TSOT-25
Pin Number
Pin Name
Pin Description
1
SW
Power Switch input.
This is the drain of the internal NMOS power switch.
Minimize the metal trace area connected to this pin to minimize EMI.
2
GND
Ground. Tie directly to ground plane.
Output voltage feedback input.
Set the output voltage by selecting values for R1 and R2 using:
3
FB
 V

R 1 = R 2  out − 1 
 1 . 23 V

Connect the ground of the feedback network to a GND plane.
4
EN
Enable, active high.
The enable pin is an active high control. Tie this pin above 2V to enable the
device. Tie this pin below 0.4V to turn off the device.
5
IN
Analog and Power input. Input Supply Pin.
Place bypass capacitor as close to VIN as possible.
AME5145AEQA MSOP-8
Pin Number
Pin Name
1
IN
2
EN
3
GND
Pin Description
Analog and Power input. Input Supply Pin.
Place bypass capacitor as close to VIN as possible.
Enable, active high.
The enable pin is an active high control. Tie this pin above 2V to enable the
device. Tie this pin below 0.4V to turn off the device.
Ground. Tie directly to ground plane.
Output voltage feedback input.
Set the output voltage by selecting values for R1 and R2 using:
4
4
FB
 V

R 1 = R 2  out − 1 
 1 . 23 V

Connect the ground of the feedback network to a GND plane.
Power Switch input.
This is the drain of the internal NMOS power switch.
Minimize the metal trace area connected to this pin to minimize EMI.
Power Switch input.
This is the drain of the internal NMOS power switch.
Minimize the metal trace area connected to this pin to minimize EMI.
5
SW
6
SW
7
GND
Ground. Tie directly to ground plane.
8
GND
Ground. Tie directly to ground plane.
Rev.B.01
AME
1.6 MHz Boost Converter With
30V Internal FET Switch
AME5145
n Pin Description
AME5145AEVA DFN-8C(3mmx3mmx0.75mm)
Pin Number
Pin Name
1
NC
Pin Description
Not Connected
Output voltage feedback input.
Set the output voltage by selecting values for R1 and R2 using:
2
FB
 V

R 1 = R 2  out − 1 
 1 . 23 V

Connect the ground of the feedback network to a GND plane.
3
Rev.B.01
NC
Not Connected
4
SW
Power Switch input.
This is the drain of the internal NMOS power switch.
Minimize the metal trace area connected to this pin to minimize EMI.
5
NC
Not Connected
6
IN
Analog and Power input. Input Supply Pin.
Place bypass capacitor as close to VIN as possible.
7
EN
Enable, active high.
The enable pin is an active high control. Tie this pin above 2V to enable the
device. Tie this pin below 0.4V to turn off the device.
8
NC
Not Connected
5
AME
1.6 MHz Boost Converter with
30V Internal FET Switch
AME5145
n Ordering Information
AME5145 x x x x xxx x - x
Special Feature2
Special Feature1
Output Voltage
Number of Pins
Package Type
Operating Ambient Temperature Range
Pin Configuration
Pin
Configuration
A
(SOT-25)
(TSOT-25)
A
(DFN-8C)
A
(MSOP-8)
6
1. SW
2. GND
3. FB
4. EN
5. IN
Operating Ambient
Temperature
Range
E: -40OC to +85OC
Package
Type
E: SOT-2X
V: DFN
Q: MSOP
Number
of
Pins
V: 5
A: 8
Output Voltage
ADJ: Adjustable
Special Feature1
Lead free &
Y: Low profile
Special Feature2
(For DFN package only)
3: 3x3x0.75(mm) (LxWxH)
(For TSOT-25 only)
Z: Lead free
1. NC
2. FB
3. NC
4. SW
5. NC
6. IN
7. EN
8. NC
1. IN
2. EN
3. GND
4. FB
5. SW
6. SW
7. GND
8. GND
Rev.B.01
AME
1.6 MHz Boost Converter With
30V Internal FET Switch
AME5145
n Ordering Information
Part Number
Marking*
Output
Voltage
Package
Operating Ambient
Temperature Range
AME5145AEEVADJZ
BLLww
ADJ
SOT-25
-40OC to +85OC
AME5145AEEVADJY
BLLww
ADJ
TSOT-25
-40OC to +85OC
AME5145AEVAADJZ-3
BLN
yyww
ADJ
DFN-8C
-40OC to +85OC
AME5145AEQAADJZ
5145
Ayww
ADJ
MSOP-8
-40OC to +85OC
Note: ww & yyww represents the date code and pls refer to Date Code Rule.
* A line on top of the first letter represents lead free plating such as BLLww.
Please consult AME sales office or authorized Rep./Distributor for the availability of package type.
Rev.B.01
7
AME
1.6 MHz Boost Converter with
30V Internal FET Switch
AME5145
n Absolute Maximum Ratings
Parameter
Input Supply Voltage
EN, FB Voltages
SW Voltage
Symbol
Maximum
Unit
VIN
6
V
VEN ,V FB
VIN
V
VSW
30
V
B*
ESD Classification
Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device.
* HBM B:2000V~3999V
n Recommended Operating Conditions
Parameter
Symbol
Rating
Ambient Temperature Range
TA
-40 to +85
Junction Temperature Range
TJ
-40 to +125
Storage Temperature Range
TSTG
-65 to +150
Unit
o
C
n Thermal Information
Parameter
Package
Die Attach
Symbol
SOT-25 / TSOT-25
Thermal Resistance*
(Junction to Case)
Maximum
Unit
81
θ JC
MSOP-8
DFN-8C
100
17
o
SOT-25 / TSOT-25
Thermal Resistance
(Junction to Ambient)
MSOP-8
Conductive
Epoxy
θJA
206
DFN-8C
125
SOT-25 / TSOT-25
400
Internal Power
Dissipation
C/W
260
MSOP-8
DFN-8C
PD
625
mW
800
Maximum Junction Temperature
150
Solder Iron (10 Sec)**
350
o
C
* Measure θJC on backside center of molding compund if IC has no tab.
8
** MIL-STD-202G 210F
Rev.B.01
AME
1.6 MHz Boost Converter With
30V Internal FET Switch
AME5145
n Electrical Specifications
VIN = 5V, EN = VIN, TA= 25oC, I L = 0A, unless otherwise noted.
Parameter
Input Voltage
Symbol
Test Condition
Min
VIN
2.7
O
Switch Current Limit
ICL
TA = 25 C
TA = -40 to +85 C
0.4
TA = -40 to +85 C
TA = 25 C
0.5
TA = -40 to +85oC
Ω
0.8
2
1.23
1.255
V
60
500
nA
Feedback Pin Bias Current
IFB
VFB = 1.23V
1.205
TA = 25oC
FB = 1.15V
(Switching)
3
o
TA = -40 to +85 C
IQ
TA = 25oC
500
o
TA = -40 to +85 C
EN = 0V
UVP
Rising Edge
Over Temperature Protection
OTP
VIN =2.7V to 5.5V
mA
400
VIN = 5V
Undervoltage Lockout
µA
2
VIN = 5V
FB = 1.3V
(Not Switching)
2.15
OTP Hysteresis Temperature
1
µA
2.35
2.55
V
160
o
C
20
o
C
2.7V <= VIN <= 5.5V
Switching Frequency
fSW
VIN =3V, TA = -40 to +85oC
1
1.6
Maximum Duty Cycle
DMAX
VIN =3V, TA = -40 to +85oC
86
93
ISW
EN = 0V
0.02
0.1
TA = -40 to +85oC
µA
0.01
∆VFB
∆VIN
Rev.B.01
0.7
0
VIN = 3V
EN
Threshold
0.6
EN = 5V
VFB
EN Input Threshold (Low)
(Shutdown)
EN Input Threshold (High)
(Enable the device)
A
0
Feedback Pin Reference
Voltage
Switch Leakage
V
EN = 0V
IEN
FB Voltage Line Regulation
5.5
0.7
O
EN Pin Bias Current
Shutdown Current
Units
1.8
o
RDSON
Max
1.2
TA = 25OC
VIN = 3.3V
Quiescent Current
1.5
o
VIN = 5V
Switch ON Resistance
Typ
%V
1.85
MHz
%
2
µA
0.4
V
TA = -40 to +85oC
2
9
AME
AME5145
1.6 MHz Boost Converter with
30V Internal FET Switch
n Detailed Description
n Application Hints
The AME5145 is a switching converter IC that operates
at a fixed frequency (1.6MHz) for fast transient response
over a wide input voltage range and incorporates pulse-bypulse current limiting protection. Operation can be best
understood by referring to Figure 4. Because this is current mode control, a 33mΩ sense resistor in series with
the switch FET is used to provide a voltage (which is proportional to the FET current) to both the input of the pulse
width modulation (PWM) comparator and the current limit
amplifier.
Selecting The External Capacitors
At the beginning of each cycle, the S-R latch turns on the
FET. As the current through the FET increases, a voltage
(proportional to this current) is summed with the ramp coming from the ramp generator and then fed into the input of
the PWM comparator. When this voltage exceeds the voltage on the other input (coming from the Gm amplifier), the
latch resets and turns the FET off. Since the signal coming
from the Gm amplifier is derived from the feedback (which
samples the voltage at the output), the action of the PWM
comparator constantly sets the correct peak current through
the FET to keep the output voltage in regulation.
Q1 and Q2 align with R3 - R6 form a bandgap voltage
reference used by the IC to hold the output in regulation.
The currents flowing through Q1 and Q2 will be equal, and
the feedback loop will adjust the regulated output to maintain this. Because of this, the regulated output is always
maintained at a voltage level equal to the voltage at the FB
node "multiplied up" by the ratio of the output resistive divider.
The current limit comparator feeds directly into the flipflop that drives the switch FET. If the FET current reaches
the limit threshold, the FET is turned off and the cycle terminated until the next clock pulse. The current limit input
terminates the pulse regardless of the status of the output
of the PWM comparator.
10
The best capacitors for use with the AME5145 are
multilayer Ceramic capacitors. They have the lowest
ESR (equivalent series resistance) and highest resonance
frequency, which makes them optimum for use with high
frequency switching Converters. When selecting a ceramic capacitor, only X5R and X7R dielectric types should
be used. Other types such as Z5U and Y5F have such
severe loss of capacitance due to effects of temperature
variation and applied voltage, they may provide as little
as 20% of rated capacitance in many typical applications. Always consult capacitor manufacturer’ s data
curves before selecting a capacitor. High-quality ceramic
capacitors can be obtained from Taiyo-Yuden, AVX, and
Murata.
Selecting The Output Capacitor
A single ceramic capacitor of value 4.7µF to 10µF will
provide sufficient output capacitance for most applications. If larger amounts of capacitance are desired for
improved line support and transient response, tantalum
capacitors can be used. Aluminum electrolytic with ultra low ESR such as Sanyo Oscon can be used, but are
usually prohibitively expensive. Typical AI electrolytic
capacitors are not suitable for switching frequencies above
500kHz due to significant ringing and temperature rise
due to self-heating from ripple current. An output capacitor with excessive ESR can also reduce phase margin and cause instability. In general, if electrolytic are
used, it is recommended that. They be paralleled with
ceramic capacitors to reduce ringing, switching losses,
and output voltage ripple.
Selecting The Input Capacitor
An input capacitor is required to serve as an energy
reservoir for the current which must flow into the coil
each time the switch turns ON. This capacitor must
have extremely low ESR, so ceramic is the best choice.
We recommend a nominal value of 4.7µF, but larger values can be used. Since this capacitor reduces the
amount of voltage ripple seen at the input pin, it also
reduces the amount of EMI passed back along that line
to other circuitry.
Rev.B.01
AME
1.6 MHz Boost Converter With
30V Internal FET Switch
AME5145
n Application Hints
Feed-Forward Compensation
Layout Hints
Although internally compensated, the feed-forward capacitor Cf is required for stability. Adding this capacitor
puts a zero in the loop response of the Converter. The
recommended frequency for the zero fz should be approximately 6kHz. Cf can be calculated using the formula:
Cf = 1 / (2 x
π
x R1 x fz)
Selecting Diodes
The external diode used in the typical application should
be a Schottky diode. A 20V diode such as the MBR0520
is recommended. The MBR05XX series of diodes are
designed to handle a maximum average current of 0.5A.
For applications exceeding 0.5A average but less than
1A, a Microsemi UPS5817 can be used.
Layout Hints
High frequency switching regulators require very careful layout of components in order to get stable operation
and low noise. All components must be as close as possible to the AME5145 device. It is recommended that a
4-layer PCB be used so that internal ground planes are
available. As an example, a recommended layout of components is shown:
Recommended PCB Component Layout (Bottom)
Some additional guidelines to be observed:
1. Keep the path between L1, D1, and C2 extremely
short. Parasitic trace inductance in series with D1 and C2
will increase noise and ringing.
2. The feedback components R1, R2 and CF must be
kept close to the FB pin of U1 to prevent noise injection
on the FB pin trace.
3. If internal ground planes are available use vias to connect directly to ground at pin 2 of U1, as well as the negative sides of capacitors C1 and C2.
Duty Cycle
The maximum duty cycle of the switching regulator determines the maximum boost ratio of output-to-input voltage that the converter can attain in mode of operation.
The duty cycle for a given boost application is defined as:
This applies for continuous mode operation.
D=
VOUT + VDIODE - V IN
VOUT + VDIODE - VSW
Recommended PCB Component Layout (Top)
Rev.B.01
11
AME
1.6 MHz Boost Converter with
30V Internal FET Switch
AME5145
n Application Hints
Calculating Load Current
Shutdown Pin Operation
The load current is related to the average inductor current by the relation:
The device is turned off by pulling the shutdown pin low.
If this function is not going to be used, the pin should be
tied directly to V IN. If the SHDN function will be needed, a
pull-up resistor must be used to VIN (approximately 50k100k recommended). The EN pin must not be left
unterminated.
ILOAD = IIND (AVG) x (1 - D)
Where “ D” is the duty cycle of the application. The
switch current can be found by:
ISW = IIND (AVG) + 1 /2 (IRIPPLE)
Inductor ripple current is dependent on inductance, duty
cycle, input voltage and frequency:
IRIPPLE = D x (V IN-V SW) / (f x L)
Combining all terms, we can develop an expression
which allows the maximum available load current to be
calculated:
ILOAD = ( 1-D ) x ( ISW (max) -
D ( VIN-VSW )
)
2fL
Thermal Consuderations
At higher duty cycles, the increased ON time of the
FET means the maximum output current will be determined by power dissipation within the AME5145 FET
switch. The switch power dissipation from ON-state conduction is calculated by:
P(SW) = D x IIND(AVE)2 x RDS(ON)
There will be some switching losses as well, so some
derating needs to be applied when calculating IC power
dissipation.
Inductor Suppliers
Recommended suppliers of inductors for this product
include, but are not limited to Sumida, Coilcraft, Panasonic,
TDK and Murata. When selecting an inductor, make certain that the continuous current rating is high enough to
avoid saturation at peak currents. A suitable core type
must be used to minimize core (switching) losses, and
wire power losses must be considered when selecting
the current rating.
12
Rev.B.01
AME
1.6 MHz Boost Converter With
30V Internal FET Switch
AME5145
IQ VIN(Active) vs Temperature
Feedback Voltage vs Temperature
1.240
3. 50
1.235
Feedback Voltage (V)
IQ VIN Active (mA)
3. 00
2. 50
2. 00
1.50
1.00
0.50
1.230
1.225
1.220
1.215
1.210
1.205
0.00
-50
-25
0
25
50
75
100
125
1.200
-50
150
-25
0
Temperature (°C)
VIN = 5V
125
2.5
2.3
2.1
1.9
1.7
-25
0
25
50
75
100
125
1.5
-50
150
-25
0
VIN = 5V
93.1
VIN = 3.3V
92.1
91.1
-25
0
25
50
75
Temperature (°C)
50
75
100
125
150
Feedback Bias Current vs Temperature
Feedback Bias Current(µA)
95.1
94.1
25
Temperature(°C)
Max. Duty Cycle vs Temperature
Max Duty Cycle (%)
100
2.7
V IN = 3.3V
96.1
Rev.B.01
75
2.9
Temperature(°C)
90.1
-50
50
Current Limit vs Temperature
Current Limit(A)
Osc illa tor Fre quenc y (MH z)
Oscillator Frequency vs Temperature
1.59
1.57
1.55
1.53
1.51
1.49
1.47
1.45
1.43
1.41
1.39
1.37
1.35
1.33
1.31
1.29
1.27
1.25
-50
25
Temperature(°C)
100
125
150
0.19
0.18
0.17
0.16
0.15
0.14
0.13
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
-50
-25
0
25
50
75
100
125
150
Temperature (°C)
13
AME
1.6 MHz Boost Converter with
30V Internal FET Switch
AME5145
RDS(on) vs Temperature
IQ VIN (Idle) vs Temperature
800
500
600
400
RDS(ON) (mΩ)
I Q VIN (Idle) (µA)
700
300
200
500
400
300
200
100
100
0
1
2
3
0
-50
5
4
-25
0
Temperature(°C)
25
75
50
100
125
150
Temperature (°C)
RDS(ON) vs VIN
RDS(ON) vs Temperature
750
700
650
800
700
600
550
500
450
400
350
300
RDS(ON ) (mΩ)
RDS(ON) (mΩ)
600
250
500
400
300
200
150
200
100
50
0
2.5
100
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
0
-50
8
- 25
VIN (V)
90
80
80
70
70
Efficiency (%)
Efficiency (%)
100
90
60
50
40
30
20
10
125
150
50
40
30
0
200
Load Current (mA)
14
100
60
250
VIN = 4.2V,
VOUT = 5V
10
0
150
75
20
VIN = 2.7V,
VOUT = 5V
100
50
Efficiency vs Load Current
100
50
25
Temperature (°C)
Efficiency vs Load Current
0
0
300
0
200
400
600
800
1000
1200
1400
Load Current (mA)
Rev.B.01
AME
1.6 MHz Boost Converter With
30V Internal FET Switch
AME5145
Efficiency vs Load Current
Efficiency vs Load Current
100
90
80
80
Efficiency (%)
Effi ci en cy (%)
70
60
50
40
30
20
VIN = 3.3V,
VOUT = 12V
10
20
40
60
80
100
120
140
60
50
40
30
20
VIN = 3.3V,
VOUT = 5V
10
0
0
70
0
160
0
Load Current (mA)
100
200
400
300
500
600
700
Load Current (mA)
Efficiency vs Load Current
Efficiency vs Load Current
80
90
70
80
Efficiency (%)
Effi ciency (%)
90
60
50
40
30
20
10
20
30
40
50
40
30
VIN = 5V,
V OUT = 12V
10
0
0
60
20
VIN = 2.7V,
VOUT = 12V
10
70
0
50
0
5.20
90
5.15
5.10
Output Voltage (V)
Efficiency (%)
80
70
60
50
40
30
20
0
50
100
150
200
Load (mA)
Rev.B.01
250
300
400
500
600
300
VIN = 2.7V
VIN = 4.2V
5.05
5.00
4.95
4.90
VIN = 3.3V
4.85
4.80
4.75
4.70
VIN= 5V,
VOUT =18V
0
200
Output Voltage vs Load Current
Efficiency vs Load Current
100
10
100
Load Current (mA)
Load Current (mA)
VOUT = 12V
4.65
350
4.60
0
100 200 300 400 500 600 700 800 900 1000 1100 1200
IOUT (mA)
15
AME
1.6 MHz Boost Converter with
30V Internal FET Switch
AME5145
Output Voltage vs Load Current
Output Voltage vs Load Current
19
12.2
Output Voltage (V)
Output Voltage (V)
12.4
VIN = 3.3V
VIN = 5V
12.0
VIN = 5V
18
17
VIN = 2.7V
VOUT = 12V
VOUT = 12V
11.8
0
50
100
150
200
250
IOUT (mA)
16
300
350
400
16
0
50
100
150
200
250
300
350
IOUT (mA)
Rev.B.01
AME
1.6 MHz Boost Converter With
30V Internal FET Switch
AME5145
n Date Code Rule
Marking
Date Code
Year
A
A
A
W
W
xxx0
A
A
A
W
W
xxx1
A
A
A
W
W
xxx2
A
A
A
W
W
xxx3
A
A
A
W
W
xxx4
A
A
A
W
W
xxx5
A
A
A
W
W
xxx6
A
A
A
W
W
xxx7
A
A
A
W
W
xxx8
A
A
A
W
W
xxx9
n Tape and Reel Dimension
SOT-25
P
W
AME
AME
PIN 1
Carrier Tape, Number of Components Per Reel and Reel Size
Rev.B.01
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
SOT-25
8.0±0.1 mm
4.0±0.1 mm
3000pcs
180±1 mm
17
AME
1.6 MHz Boost Converter with
30V Internal FET Switch
AME5145
n Tape and Reel Dimension
TSOT-25
P
W
AME
AME
PIN 1
Carrier Tape, Number of Components Per Reel and Reel Size
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
TSOT-25
8.0±0.1 mm
4.0±0.1 mm
3000pcs
180±1 mm
DFN-8C
(3mmx3mmx0.75mm)
P
PIN 1
W
AME
AME
Carrier Tape, Number of Components Per Reel and Reel Size
18
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
DFN-8C
(3x3x0.75mm)
12.0±0.1 mm
4.0±0.1 mm
3000pcs
330±1 mm
Rev.B.01
AME
1.6 MHz Boost Converter With
30V Internal FET Switch
AME5145
n Tape and Reel Dimension
MSOP-8
P
PIN 1
W
AME
AME
Carrier Tape, Number of Components Per Reel and Reel Size
Rev.B.01
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
MSOP-8
12.0±0.1 mm
4.0±0.1 mm
4000pcs
330±1 mm
19
AME
1.6 MHz Boost Converter with
30V Internal FET Switch
AME5145
n Package Dimension
SOT-25
Top View
Side View
SYMBOLS
D
MILLIMETERS
MIN
θ1
1.20REF
E
H
A
PIN 1
L
S1
0.0472REF
0.15
0.0000
0.0059
b
0.30
0.55
0.0118
0.0217
D
2.70
3.10
0.1063
0.1220
E
1.40
1.80
0.0551
0.0709
1.90 BSC
e
θ1
2.60
0.07480 BSC
3.00
0.37BSC
0
o
0.10236 0.11811
0.0146BSC
10
o
0o
10o
0.95BSC
0.0374BSC
MILLIMETERS
INCHES
S1
A1
A
MAX
0.00
L
Front View
MIN
A1
H
e
MAX
INCHES
b
TSOT-25
Top View
Side View
D
E
H
θ1
PIN 1
L
S1
SYMBOLS
MIN
MAX
MIN
MAX
A+A1
0.90
1.25
0.0354
0.0492
b
0.30
0.50
0.0118
0.0197
D
2.70
3.10
0.1063
0.1220
E
1.40
1.80
0.0551
0.0709
H
e
1.90 BSC
e
2.40
θ1
0
o
10
0.95BSC
0.09449 0.11811
0.0138BSC
o
0
o
10
o
0.0374BSC
b
20
A1
A
S1
3.00
0.35BSC
L
Front View
0.07480 BSC
Rev.B.01
AME
1.6 MHz Boost Converter With
30V Internal FET Switch
AME5145
n Package Dimension
DFN-8C (3mmx3mmx0.75mm)
b
D
e
L
E
E1
PIN #1
TOP VIEW
D1
BOTTOM VIEW
A
G1
G
REAR VIEW
SYMBOLS
Rev.B.01
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
A
0.700
0.800
0.028
0.031
D
2.900
3.100
0.114
0.122
E
2.900
3.100
0.114
0.122
e
0.600
0.700
0.024
0.028
D1
2.200
2.400
0.087
0.094
E1
1.400
1.600
0.055
0.063
b
0.200
0.320
0.008
0.013
L
0.375
0.575
0.015
0.023
G
0.153
0.253
0.0060
0.010
G1
0.000
0.050
0.0000
0.002
21
AME
1.6 MHz Boost Converter with
30V Internal FET Switch
AME5145
n Package Dimension
MSOP-8
Top View
DETAIL A
SYMBOLS
D
e1
TOP PKG.
BTM PKG.
E1
E
θ
L2
L
L1
PIN 1 I. D
(SHINNY SURFACE)
R0.127(0. 005) TYP
ALL CORNER
& EDGES
Front View
A1
e
INCHES
MIN
MAX
MIN
MAX
A
-
1.10
-
0.04330
A1
0.00
0.20
0.000
0.008
A2
0.75
0.95
0.029
0.037
b
0.28
0.38
0.011
0.015
b1
0.28
0.33
0.011
0.013
c
0.13
0.23
0.005
0.009
c1
0.13
0.17
0.005
0.006
D
2.90
3.10
0.114
0.122
E
4.77
4.98
0.188
0.196
E1
2.90
3.10
0.114
0.122
e
0.65 TYP
0.0255 TYP
e1
1.95 TYP
0.0767 TYP
L
A A2
MILLIMETERS
0.40
0.80
0.01574 0.03149
L1
0.94 REF
0.037 REF
L2
0.254 TYP
0.010 TYP
θ
0
o
8
o
0
o
8
o
b
End View
SECTION BB
b
b1
BASE METAL
B
c
B
E1
c1
WITH PLATING
See Detail A
22
Rev.B.01
www.ame.com.tw
E-Mail: sales@ame.com.tw
Life Support Policy:
These products of AME, Inc. are not authorized for use as critical components in life-support
devices or systems, without the express written approval of the president
of AME, Inc.
AME, Inc. reserves the right to make changes in the circuitry and specifications of its devices and
advises its customers to obtain the latest version of relevant information.
 AME, Inc. , March 2010
Document: 1049-DS5145-B.01
Corporate Headquarter
AME, Inc.
2F, 302 Rui-Guang Road, Nei-Hu District
Taipei 114, Taiwan, R.O.C.
Tel: 886 2 2627-8687
Fax: 886 2 2659-2989