Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 2SB1184 / 2SB1243 Transistors Power Transistor (−60V, −3A) 2SB1184 / 2SB1243 !External dimensions (Units : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 !Structure Epitaxial planar type PNP silicon transistor 4.4±0.2 0.9 9.5±0.5 1.5 2.5 0.65±0.1 0.75 2.5±0.2 6.8±0.2 0.5±0.1 0.9 5.5 +0.3 −0.1 1.5±0.3 2SB1184 1.0 !Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2) Complements the 2SD1760 / 2SD1864. (3) 2.54 2.54 1.05 (1) (2) (3) (1) Base (2) Collector (3) Emitter ROHM : CPT3 EIAJ : SC-63 ROHM : ATV 0.45±0.1 (1) Emitter (2) Collector (3) Base !Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V IC −3 A (DC) ICP −4.5 A (Pulse) Collector power 2SB1184 dissipation 2SB1243 PC 1 15 W W (TC=25°C) 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C Collector current ∗1 ∗2 ∗1 Single pulse, Pw=100ms ∗2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. 1/3 For the very latest product data and news visit angliac.com Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 2SB1184 / 2SB1243 Transistors !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Collector-base breakdown voltage BVCBO −60 − − V IC=−50µA Collector-emitter breakdown voltage BVCEO −50 − − V IC=−1mA Emitter-base breakdown voltage BVEBO −5 − − V IE=−50µA ICBO − − −1 µA VCB=−40V Parameter Collector cutoff current Unit Conditions IEBO − − −1 µA VEB=−4V Collector-emitter saturation voltage VCE(sat) − − −1 V IC/IB=−2A/−0.2A ∗ Base-emitter saturation voltage VBE(sat) − − −1.2 V IC/IB=−1.5A/−0.15A ∗ hFE 82 − 390 − VCE=−3V, IC=−0.5A ∗ Transition frequency fT − 70 − MHz Output capacitance Cob − 50 − pF Emitter cutoff current DC current transfer ratio VCE=−5V, IE=0.5A, f=30MHz VCB=−10V, IE=0A, f=1MHz ∗ Measured using pulse current. !Packaging specifications and hFE Taping Package Code Type hFE 2SB1184 PQR 2SB1243 PQR Basic ordering unit (pieces) TL TV2 2500 2500 − − hFE values are classified as follows : Item P Q R hFE 82~180 120~270 180~390 !Electrical characteristic curves −2 −1 Ta=100°C 25°C -25°C −0.2 −0.1 −0.05 −0.02 −0.01 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics −2.5 −50mA −45mA −40mA −35mA −30mA −25mA −20mA −2.0 −15mA −1.5 −10mA −1.0 −5mA −0.5 0 0 −1 −3.0 Tc=25°C −2 −3 IB=0mA −4 −5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics ( Ι ) COLLECTOR CURRENT : IC (A) −5 −0.5 −3.0 VCE=−3V COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) −10 Tc=25°C −50mA −45mA −40mA −35mA −30mA −25mA −20mA −15mA −2.5 −2.0 −1.5 −10mA −1.0 IB=−5mA −0.5 0 0 PC=15W −10 −20 IB=0mA −30 −40 −50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics ( ΙΙ ) 2/3 For the very latest product data and news visit angliac.com Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 2SB1184 / 2SB1243 1k Ta=25°C DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 200 VCE=−5V 100 50 −3V 20 10 5 Ta=100°C 25°C −25°C 200 100 50 20 10 5 2 2 1 −0.01−0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 1 −0.01−0.02 −0.05 −0.1−0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( Ι ) Fig.5 DC current gain vs. collector current ( ΙΙ ) −1 Ta=−25°C 25°C 100°C TRANSITION FREQUENCY : fT (MHz) −2 1000 lC/lB=10 −5 VBE(sat) −0.5 −0.2 −0.1 −0.05 Ta=100°C 25°C −25°C VCE(sat) −0.02 −0.01 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 100 50 20 10 5 2 −10 −0.1 IC/IB=50/1 −0.05 20/1 −0.02 10/1 −5 −10 1000 Ta=25°C f=1MHz IE=0A 500 200 100 50 20 10 5 2 1 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.9 Collector output capacitance vs. collector base voltage −1.0 s∗ s∗ 0m −0.2 m −0.5 −0.1 −0.05 −0.05 Tc=25°C ∗Single −0.02 nonrepetitive pulse −0.01 −0.1 −0.2 −0.5 −1 −2.0 DC −0.1 −0.2 Tc=25°C ∗Single nonrepetitive pulse 10 ∗ ms −0.2 50 100 200 500 1000 IC Max. (Pulse)∗ −1 −0.5 0 =1 Pw s∗ D C =10 PW 0m 10 −0.5 COLLECTOR CURRENT : IC (A) −5.0 COLLECTOR CURRENT : IC (A) −10.0 −5.0 −1.0 10 20 Fig.8 Gain bandwidth product vs. emitter current −10.0 −2.0 5 EMITTER CURRENT : IE (mA) COLLECTOR CURRENT : IC (A) Fig.7 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage vs. collector current 2 −2 Fig.6 Collector-emitter saturation voltage vs.collector current 200 1 1 Ta=25°C −5 COLLECTOR CURRENT : IC (A) Ta=25°C VCE=−5V 500 −10 −0.01 −0.01−0.02 −0.05−0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC (A) −10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) VCE=−3V 500 500 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Transistors −0.02 −2 −5 −10 −20 −50−100 −0.01 −0.1−0.2 −0.5 −1 −2 −5 −10 −20 −50−100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operation area (2SB1184) Fig.11 Safe operation area (2SB1243) 3/3 For the very latest product data and news visit angliac.com