ROHM SIM-22ST

Infrared light emitting diode, side-view type
SIM-22ST
The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with 1.5 lens.
1.0
2.54 ± 0.1
Dimensions (Unit : mm)
Applications
Light source for sensors
1.9
Features
1) Compact package (4.7x4.6 mm) with lens.
2) High efficiency, high output.
3) Emission spectrum well suited to silicon detectors
(P = 950 nm).
4) Good current-optical output linearity.
5) Long life, high reliability.
Notes:
1. Tolerances are ± 0.2 unless
otherwise indicated.
2. Value in parenthese is size
at base of leads.
Gate remainder
0.3Max.
4.1
0.15
R0.5
1.5
4.7 ± 0.1
R0.75
2.8
1.0
2−0.65
2−0.45
1
R0.5
12Min.
2-C0.7
1.8 ± 0.05
4.6 ± 0.1
0.40
2
0.64
(2.54)
1 Cathode
2 Anode
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Forward current
IF
50
mA
Reverse voltage
VR
5
V
Power dissipation
PD
80
mW
Pulse forward current
IFP∗
0.5
A
Operating temperature
Topr
−25 to +85
°C
Storage temperature
Tstg
−30 to +100
°C
∗ Pulse width = 0.1ms, duty ratio 1%
Electrical and optical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Unit
Emitting strength
IE
−
0.8
−
mW/sr
IF=10mA
Emitting strength
IE
0.48
1.3
1.94
mA
IF=10mA∗
Forward voltage
VF
−
1.3
1.6
V
IF=50mA
Reverse current
IR
−
−
10
μA
VR=5V
Peak light emitting wavelength
λP
−
950
−
nm
IF=10mA
Spectral line half width
Δλ
−
40
−
nm
IF=20mA
Half-viewing angle
θ1/2
−
±30
−
deg
IF=50mA
Parameter
Response time
Cut-off frequency
tr
fc
tf
Conditions
−
1.0
−
μs
IF=50mA
−
1.0
−
MHz
IF=50mA
∗ According to our measurement procedures.
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c 2010 ROHM Co., Ltd. All rights reserved.
○
1/2
2010.06 - Rev.B
SIM-22ST
Data Sheet
Electrical and optical characteristic curves
14
40
30
20
10
0
−20
0
20
40
60
80
50
−25°C
0°C
25°C
50°C
75°C
40
30
20
10
0
0
100
AMBIENT TEMPERATURE : Ta(°C)
0.4
1.2
12
10
8
6
4
2
0
0
1.6
10
20
30
40
50
FORWARD CURRENT : IF(mA)
Fig.2 Forward current vs. forward voltage
Fig.3 Emitting strength vs.
forward current
RELATIVE OPTICAL OUTPUT : PO (%)
100
200
100
50
20
10
0
25
50
75
100
AMBIENT TEMPERATURE : Ta (°C)
80
60
40
20
0
900
920
Fig.4 Relative emitting strength vs.
ambient temperature
20°
10°
0°
80
50°
60
60°
40
70°
20
80°
40
20
RELATIVE EMITTING STRENGTH (%)
0
980
1000
100
40°
60
960
Fig.5 Wavelength
30°
80
940
OPTICAL WAVELENGTH : λ (nm)
0
10° 20° 30° 40° 50° 60° 70° 80° 90°
RELATIVE EMITTING STRENGTH (%)
−25
90°
100
0.8
FORWARD VOLTAGE : VF (V)
Fig.1 Forward current falloff
RELATIVE EMITTING STRENGTH : IE (%)
60
EMITTING STRENGTH I : IE (mW / Sr)
50
FORWARD CURRENT : IF (mA)
FORWARD CURRENT : IF (mA)
70
ANGULAR DISPLACEMENT : θ (deg)
Fig. 6 Directional pattern
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c 2010 ROHM Co., Ltd. All rights reserved.
○
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2010.06 - Rev.B
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R1010A