Micro Sensing Device Data Book

Micro Sensing Device Data Book
OMRON Corporation
Industrial Automation Company
Tokyo, JAPAN
Please use the following site for any comments or questions
on these products.
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subject to change without notice.
Authorized Distributor:
Cat. No. X062-E1-07
Printed in Japan
1110-0.3M (1001) (C)
Micro
Sensing Device
Data Book
Photomicrosensors
Microphotonic Devices
To the customer who buys Omron products
Warranty and Limited Warranty
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(EC300E)
CONTENTS
Photomicrosensors
Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Technical Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Precautions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Transmissive Photomicrosensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Reflective Photomicrosensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154
Microphotonic Devices
Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 194
Manuscript Paper Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196
Micro-displacement Sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200
General Information
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 204
3
Photomicrosensors
Selection. . . . . . . . . . . . . . . . . . . . . . . .
5
Technical Information . . . . . . . . . . . . . . 10
Precautions . . . . . . . . . . . . . . . . . . . . . 24
Transmissive Sensors
EE-SX1107. . . . . . . . . . . . . . . . . . . . . .
EE-SX1108. . . . . . . . . . . . . . . . . . . . . .
EE-SX1131. . . . . . . . . . . . . . . . . . . . . .
EE-SX4134. . . . . . . . . . . . . . . . . . . . . .
EE-SX1109. . . . . . . . . . . . . . . . . . . . . .
EE-SX1235A-P2. . . . . . . . . . . . . . . . . .
EE-SX3239-P2 . . . . . . . . . . . . . . . . . . .
EE-SX4235A-P2. . . . . . . . . . . . . . . . . .
EE-SX460-P1 . . . . . . . . . . . . . . . . . . . .
EE-SX461-P11 . . . . . . . . . . . . . . . . . . .
EE-SX3148-P1 . . . . . . . . . . . . . . . . . . .
EE-SX3009-P1/4009-P1 . . . . . . . . . . .
EE-SX3157-P1/4157E-P1 . . . . . . . . . .
EE-SX1018. . . . . . . . . . . . . . . . . . . . . .
EE-SX1049. . . . . . . . . . . . . . . . . . . . . .
EE-SX1103. . . . . . . . . . . . . . . . . . . . . .
EE-SX1105. . . . . . . . . . . . . . . . . . . . . .
EE-SX493. . . . . . . . . . . . . . . . . . . . . . .
EE-SX1055. . . . . . . . . . . . . . . . . . . . . .
EE-SX1046. . . . . . . . . . . . . . . . . . . . . .
EE-SX1106. . . . . . . . . . . . . . . . . . . . . .
EE-SX198. . . . . . . . . . . . . . . . . . . . . . .
EE-SX199. . . . . . . . . . . . . . . . . . . . . . .
EE-SX398/498 . . . . . . . . . . . . . . . . . . .
EE-SX301/401 . . . . . . . . . . . . . . . . . . .
EE-SX1071. . . . . . . . . . . . . . . . . . . . . .
EE-SX384/484 . . . . . . . . . . . . . . . . . . .
EE-SJ3 Series . . . . . . . . . . . . . . . . . . .
EE-SX1057. . . . . . . . . . . . . . . . . . . . . .
28
32
36
40
44
48
50
52
54
56
58
60
62
64
66
68
70
72
74
76
78
80
82
84
86
88
90
92
94
EE-SX1128 . . . . . . . . . . . . . . . . . . . . .
EE-SJ5-B . . . . . . . . . . . . . . . . . . . . . . .
EE-SX1041 . . . . . . . . . . . . . . . . . . . . .
EE-SX1042 . . . . . . . . . . . . . . . . . . . . .
EE-SX1081 . . . . . . . . . . . . . . . . . . . . .
EE-SX1115 . . . . . . . . . . . . . . . . . . . . .
EE-SX1137 . . . . . . . . . . . . . . . . . . . . .
EE-SX3081/4081 . . . . . . . . . . . . . . . . .
EE-SX1035 . . . . . . . . . . . . . . . . . . . . .
EE-SX1070 . . . . . . . . . . . . . . . . . . . . .
EE-SX3070/4070 . . . . . . . . . . . . . . . . .
EE-SX1140 . . . . . . . . . . . . . . . . . . . . .
EE-SX129 . . . . . . . . . . . . . . . . . . . . . .
EE-SH3 Series. . . . . . . . . . . . . . . . . . .
EE-SV3 Series . . . . . . . . . . . . . . . . . . .
EE-SX138 . . . . . . . . . . . . . . . . . . . . . .
EE-SX153 . . . . . . . . . . . . . . . . . . . . . .
EE-SX1088 . . . . . . . . . . . . . . . . . . . . .
EE-SX1096 . . . . . . . . . . . . . . . . . . . . .
EE-SX3088/4088 . . . . . . . . . . . . . . . . .
EE-SG3/3-B . . . . . . . . . . . . . . . . . . . . .
EE-SX1161-W11 . . . . . . . . . . . . . . . . .
EE-SX3161-W11/4161-W11 . . . . . . . .
EE-SX1088-W11 . . . . . . . . . . . . . . . . .
EE-SX3088-W11/4088-W11 . . . . . . . .
EE-SX1096-W11 . . . . . . . . . . . . . . . . .
EE-SX3096-W11/4096-W11 . . . . . . . .
EE-SX1160-W11 . . . . . . . . . . . . . . . . .
EE-SX3160-W11/4160-W11 . . . . . . . .
96
98
100
102
104
106
108
110
112
114
116
118
120
122
124
126
128
130
132
134
136
138
140
142
144
146
148
150
152
154
158
160
162
164
166
EE-SY313/413 . . . . . . . . . . . . . . . . . . .
EE-SY110 . . . . . . . . . . . . . . . . . . . . . .
EE-SF5/5-B . . . . . . . . . . . . . . . . . . . . .
EE-SY310/410 . . . . . . . . . . . . . . . . . . .
EE-SB5/5-B . . . . . . . . . . . . . . . . . . . . .
168
170
172
174
176
Reflective Sensors
EE-SY1200. . . . . . . . . . . . . . . . . . . . . .
EE-SY171. . . . . . . . . . . . . . . . . . . . . . .
EE-SY169. . . . . . . . . . . . . . . . . . . . . . .
EE-SY169A . . . . . . . . . . . . . . . . . . . . .
EE-SY169B . . . . . . . . . . . . . . . . . . . . .
EE-SY113. . . . . . . . . . . . . . . . . . . . . . .
Actuator Sensors
EE-SA105. . . . . . . . . . . . . . . . . . . . . . .
EE-SA113. . . . . . . . . . . . . . . . . . . . . . .
EE-SA102. . . . . . . . . . . . . . . . . . . . . . .
EE-SA103. . . . . . . . . . . . . . . . . . . . . . .
EE-SA104. . . . . . . . . . . . . . . . . . . . . . .
EE-SA107-P2 . . . . . . . . . . . . . . . . . . . .
EE-SA407-P2 . . . . . . . . . . . . . . . . . . . .
4
178
180
182
184
186
188
190
Selection Guide
Micro Sensing Device
Photomicrosensor
Sensing method
Termination type
Mounting type
Transmissive
SMD type
Surface mount
Connector type
Snap-in
Screw mount
Terminal type
Through-hole
Screw mount
Reflective
Prewired type
Screw mount
SMD type
Surface mount
Terminal type
Through-hole
Screw mount
Actuator
Actuator
Actuator mounting
Selection Guide
5
Selection Guide
■ Transmissive
Termination
type
SMD type
Mounting type
Surface mount
Connector type Snap-in
Screw mount
Terminal type
Through-hole
Sensing
distance
Output
configuration
Features
Page
1.0 mm
Phototransistor
EE-SX1107
Ultra compact
28
2.0 mm
Phototransistor
EE-SX1108
Ultra compact
32
EE-SX1131
Ultra compact, 2CH Output
36
Photo-IC
EE-SX4134
Ultra compact, Light-ON
40
3.0 mm
Phototransistor
EE-SX1109
General purpose
44
5.0 mm
Phototransistor
EE-SX1235A-P2
General purpose
48
Photo-IC
EE-SX3239-P2
Dark-ON
50
EE-SX4235A-P2
Light-ON
52
EE-SX460-P1
Light-ON, Easy to mount
54
15.0 mm
Photo-IC
EE-SX461-P11
Light-ON, Easy to mount
56
3.6 mm
Photo-IC
EE-SX3148-P1
Dark-ON
58
5.0 mm
Photo-IC
EE-SX3009-P1
Dark-ON
60
EE-SX4009-P1
Light-ON
EE-SX3157-P1
Dark-ON
EE-SX4157E-P1
Light-ON
EE-SX1018
Compact
64
EE-SX1049
Compact, with a positioning boss
66
EE-SX1103
Ultra compact
68
EE-SX1105
Ultra compact
70
Photo-IC
EE-SX493
High-resolution, Light-ON
72
2.8 mm
Phototransistor
EE-SX1055
Compact
74
3.0 mm
Phototransistor
EE-SX1046
Horizontal aperture
76
EE-SX1106
Compact
78
EE-SX198
General purpose
80
EE-SX199
With a positioning boss
82
EE-SX398
Dark-ON
84
EE-SX498
Light-ON
2.0 mm
Phototransistor
Photo-IC
3.4 mm
3.5 mm
3.6 mm
Photo-IC
62
EE-SX301
Dark-ON
EE-SX401
Light-ON
Phototransistor
EE-SX1071
General purpose
88
Photo-IC
EE-SX384
Dark-ON
90
EE-SX484
Light-ON
EE-SJ3-C
High power
EE-SJ3-D
High-resolution
Phototransistor
86
92
EE-SJ3-G
Horizontal aperture
EE-SX1057
Dustproof
94
96
4.2 mm
Phototransistor
EE-SX1128
Horizontal aperture
5.0 mm
Phototransistor
EE-SJ5-B
General purpose
98
EE-SX1041
With a positioning boss
100
EE-SX1042
High profile
102
EE-SX1081
General purpose
104
EE-SX1115
High profile, with a positioning boss
106
EE-SX1137
With a positioning boss
108
110
Photo-IC
EE-SX3081
Dark-ON
EE-SX4081
Light-ON
5.2 mm
Phototransistor
EE-SX1035
Compact
8.0 mm
Phototransistor
EE-SX1070
Wide slot, with a positioning boss
114
Photo-IC
EE-SX3070
Wide slot, with a positioning boss, Dark-ON
116
EE-SX4070
Wide slot, with a positioning boss, Light-ON
EE-SX1140
Wide slot
14.0 mm
6
Model
Selection Guide
Phototransistor
112
118
Termination
type
Terminal type
Mounting type
Through-hole/
Screw mount
Sensing
distance
Output
configuration
Screw mount
Features
Page
3.0 mm
Phototransistor
EE-SX129
High-resolution
120
3.4 mm
Phototransistor
EE-SH3/B
High-resolution
122
EE-SH3-CS/C
High power
Photo-IC
Prewired type
Model
EE-SH3-DS/D
High-resolution
EE-SH3-GS/G
Horizontal aperture
EE-SV3/B
High-resolution
EE-SV3-CS/C
High power
EE-SV3-DS/D
High-resolution
EE-SV3-GS/G
Horizontal aperture
124
EE-SX138
General purpose
EE-SX153
Horizontal aperture
126
128
EE-SX1088
General purpose
130
EE-SX1096
Horizontal aperture
132
EE-SX3088
Dark-ON
134
EE-SX4088
Light-ON
3.6 mm
Phototransistor
EE-SG3/-B
Dustproof
3.2 mm
Phototransistor
EE-SX1161-W11
Dustproof
138
Photo-IC
EE-SX3161-W11
Dustproof, Dark-ON
140
EE-SX4161-W11
Dustproof, Light-ON
3.4 mm
9.5 mm
136
Phototransistor
EE-SX1088-W11
General purpose
142
Photo-IC
EE-SX3088-W11
Dark-ON
144
EE-SX4088-W11
Light-ON
Phototransistor
EE-SX1096-W11
Horizontal aperture
146
Photo-IC
EE-SX3096-W11
Horizontal aperture, Dark-ON
148
EE-SX4096-W11
Horizontal aperture, Light-ON
Phototransistor
EE-SX1160-W11
Wide slot
150
Photo-IC
EE-SX3160-W11
Wide slot, Dark-ON
152
EE-SX4160-W11
Wide slot, Light-ON
Selection Guide
7
■ Reflective
Termination
type
Mounting type
Sensing
distance
Output
configuration
Model
Features
Page
SMD type
Surface mount
1.0 mm/
4.0 mm
Phototransistor
EE-SY1200
Ultra compact
154
Terminal type
Through-hole
3.5 mm
Phototransistor
EE-SY171
Thin
158
4.0 mm
Phototransistor
4.4 mm
Phototransistor
Photo-IC
5.0 mm
Phototransistor
Photo-IC
Through-hole/
Screw mount
5.0 mm
Phototransistor
EE-SY169
Red LED
160
EE-SY169A
General purpose
162
EE-SY169B
High power, Red LED
164
EE-SY113
Dustproof
166
168
EE-SY313
Dustproof, Dark-ON
EE-SY413
Dustproof, Light-ON
EE-SY110
General purpose
170
EE-SF5/-B
Dustproof
172
174
EE-SY310
Dark-ON
EE-SY410
Light-ON
EE-SB5/-B
Dustproof
176
■ Actuator
Termination
type
Mounting type
Sensing
distance
Output
configuration
Model
Features
Page
Actuator
Through-hole
-
Phototransistor
EE-SA105
Low operating force
178
EE-SA113
Low operating force
180
Actuator
mounting
Through-hole
3.0 mm
Phototransistor
EE-SA102
Top attachment
182
EE-SA103
Side attachment
184
EE-SA104
Top attachment
186
Phototransistor
EE-SA107-P2
Top attachment
188
Photo-IC
EE-SA407-P2
Top attachment, Light-ON
190
Snap-in
8
3.6 mm
Selection Guide
MEMO
9
Technical Information
Features of Photomicrosensors
The Photomicrosensor is a compact optical sensor that senses objects or object positions with an optical beam. The transmissive Photomicrosensor and reflective Photomicrosensor are typical Photomicrosensors.
The transmissive Photomicrosensor incorporates an emitter and a transmissive that face each other as shown in Figure 1. When an object is located in the sensing position between the emitter and the detector, the object intercepts the optical beam of the emitter, thus reducing the amount
of optical energy reaching the detector.
The reflective Photomicrosensor incorporates an emitter and a detector as shown in Figure 2. When an object is located in the sensing area of the
reflective Photomicrosensor, the object reflects the optical beam of the emitter, thus changing the amount of optical energy reaching the detector.
“Photomicrosensor” is an OMRON product name. Generally, the Photomicrosensor is called a photointerrupter.
Figure 1. Transmissive Photomicrosensor
LED
Phototransistor
Figure 2. Reflective Photomicrosensor
LED
Phototransistor
Datasheet
■ Electrical and Optical Characteristics
■ Absolute Maximum Ratings and
Electrical and Optical Characteristics
The electrical and optical characteristics of Photomicrosensors
indicate the performance of Photomicrosensors under certain
conditions. Most items of the electrical and optical characteristics
are indicated by maximum or minimum values. OMRON usually sells
Photomicrosensors with standard electrical and optical
characteristics. The electrical and optical characteristics of
Photomicrosensors sold to customers may be changed upon
request. All electrical and optical characteristic items of
Photomicrosensors indicated by maximum or minimum values are
checked and those of the Photomicrosensors indicated by typical
values are regularly checked before shipping so that OMRON can
guarantee the performance of the Photomicrosensors.
In short, the absolute maximum ratings indicate the permissible
operating limits of the Photomicrosensors and the electrical
and optical characteristics indicate the maximum performance
of the Photomicrosensors.
The datasheets of Photomicrosensors include the absolute
maximum ratings and electrical and optical characteristics of the
Photomicrosensors as well as the datasheets of transistors and ICs.
It is necessary to understand the difference between the absolute
maximum ratings and electrical and optical characteristics of various
Photomicrosensors.
■ Absolute Maximum Ratings
The absolute maximum ratings of Photomicrosensors and other
products with semiconductors specify the permissible operating
voltage, current, temperature, and power limits of these products.
The products must be operated absolutely within these limits.
Therefore, when using any Photomicrosensor, do not ignore the
absolute maximum ratings of the Photomicrosensor, or the
Photomicrosensor will not operate precisely. Furthermore, the
Photomicrosensor may be deteriorate or become damaged, in which
case OMRON will not be responsible.
Practically, Photomicrosensors should be used so that there will be
some margin between their absolute maximum ratings and actual
operating conditions.
10
Technical Information
Terminology
The terms used in the datasheet of each Photomicrosensor with a phototransistor output circuit or a photo IC output circuit are explained below.
■ Phototransistor Output Photomicrosensor
Symbol
Item
Definition
IFP
Pulse forward current
The maximum pulse current that is allowed to flow continuously from the anode to cathode of an LED
under a specified temperature, a repetition period, and a pulse width condition.
IC
Collector current
The current that flows to the collector junction of a phototransistor.
PC
Collector dissipation
The maximum power that is consumed by the collector junction of a phototransistor.
ID
Dark current
The current leakage of the phototransistor when a specified bias voltage is imposed on the phototransistor so that the polarity of the collector is positive and that of the emitter is negative on condition that
the illumination of the Photomicrosensor is 0 lx.
IL
Light current
The collector current of a phototransistor under a specified input current condition and at a specified
bias voltage.
VCE (sat) Collector-emitter saturated The ON-state voltage between the collector and emitter of a phototransistor under a specified bias curvoltage
rent condition.
ILEAK
Leakage current
The collector current of a phototransistor under a specified input current condition and at a specified
bias voltage when the phototransistor is not exposed to light.
tr
Rising time
The time required for the leading edge of an output waveform of a phototransistor to rise from 10% to
90% of its final value when a specified input current and bias condition is given to the phototransistor.
tf
Falling time
The time required for the trailing edge of an output waveform of a phototransistor to decrease from 90%
to 10% of its final value when a specified input current and bias condition is given to the phototransistor.
VCEO
Collector-emitter voltage
The maximum positive voltage that can be applied to the collector of a phototransistor with the emitter
at reference potential.
VECO
Emitter-collector voltage
The maximum positive voltage that can be applied to the emitter of a phototransistor with the collector
at reference potential.
■ Phototransistor/Photo IC Output Photomicrosensor
Symbol
Item
Definition
IF
Forward current
The maximum DC voltage that is allowed to flow continuously from the anode of the LED to the cathode
of the LED under a specified temperature condition.
VR
Reverse voltage
The maximum negative voltage that can be applied to the anode of the LED with the cathode at reference potential.
VCC
Supply voltage
The maximum positive voltage that can be applied to the voltage terminals of the photo IC with the
ground terminal at reference potential.
VOUT
Output voltage
The maximum positive voltage that can be applied to the output terminal with the ground terminal of
the photo IC at reference potential.
IOUT
Output current
The maximum current that is allowed to flow in the collector junction of the output transistor of the photo
IC.
POUT
Output permissible dissipation
The maximum power that is consumed by the collector junction of the output transistor of the photo IC.
VF
Forward voltage
The voltage drop across the LED in the forward direction when a specified bias current is applied to the
photo IC.
IR
Reverse current
The reverse leakage current across the LED when a specified negative bias is applied to the anode
with the cathode at reference potential.
VOL
Output low voltage
The voltage drop in the output of the photo IC when the IC output is turned ON under a specified voltage and output current applied to the photo IC.
VOH
Output high voltage
The voltage output by the photo IC when the IC output is turned OFF under a specified supply voltage
and bias condition given to the photo IC.
ICC
Current consumption
The current that will flow into the sensor when a specified positive bias voltage is applied from the power source with the ground of the photo IC at reference potential.
IFT
(IFT OFF)
LED current when output is The forward LED current value that turns OFF the output of the photo IC when the forward current to
turned OFF
the LED is increased under a specified voltage applied to the photo IC.
IFT
(IFT ON)
LED current when output is The forward LED current value that turns ON the output of the photo IC when the forward current to the
turned ON
LED is increased under a specified voltage applied to the photo IC.
ΔH
Hysteresis
The difference in forward LED current value, expressed in percentage, calculated from the respective
forward LED currents when the photo IC is turned ON and when the photo IC is turned OFF.
f
Response frequency
The number of revolutions of a disk with a specified shape rotating in the light path, expressed by the
number of pulse strings during which the output logic of the photo IC can be obtained under a specified
bias condition given to the LED and photo IC (the number of pulse strings to which the photo IC can
respond in a second).
Technical Information
11
Design
Driving Current Level
The following explains how systems using Photomicrosensors must
be designed.
It is especially important to decide the level of the forward current (IF)
of the emitter incorporated by any Photomicrosensor. The forward
current must not be too large or too small.
Before using any Photomicrosensor, refer to the absolute maximum
ratings in the datasheet of the Photomicrosensor to find the emitter’s
forward current upper limit. For example, the first item in the absolute
maximum ratings in the datasheet of the EE-SX1018 shows that the
forward current (IF) of its emitter is 50 mA at a Ta (ambient
temperature) of 25°C. This means the forward current (IF) of the
emitter is 50 mA maximum at a Ta of 25°C. As shown in Figure 4, the
forward current must be reduced according to changes in the
ambient temperature.
Figure 4 indicates that the forward current (IF) is approximately
27 mA maximum if the EE-SX1018 is used at a Ta of 60°C. This
means that a current exceeding 27 mA must not flow into the emitter
incorporated by the EE-SX1018 at a Ta of 60°C.
As for the lower limit, a small amount of forward current will be
required because the LED will not give any output if the forward
current IF is zero.
Characteristics of Emitter
The emitter of each Photomicrosensor has an infrared LED or red
LED. Figure 3 shows how the LED forward current characteristics of
the EE-SX1018, which has an emitter with an infrared LED, and
those of the EE-SY169B, which has an emitter with a red LED, are
changed by the voltages imposed on the EE-SX1018 and EESY169B. As shown in this figure, the LED forward current
characteristics of the EE-SX1018 greatly differ from those of the EESY169B. The LED forward current characteristics of any
Photomicrosensor indicate how the voltage drop of the LED
incorporated by the emitter of the Photomicrosensor is changed by
the LED’s forward current (IF) flowing from the anode to cathode.
Figure 3 shows that the forward voltage (VF) of the red LED is higher
than that of the infrared LED.
The forward voltage (VF) of the infrared LED is approximately 1.2 V
and that of the red LED is approximately 2 V provided that the
practical current required by the infrared LED and that required by
the red LED flow into these LEDs respectively.
Figure 4. Temperature Characteristics (EE-SX1018)
PC
IF
Forward current IF (mA)
Forward current IF (mA)
Figure 3. LED Forward Current vs. Forward Voltage
Characteristics (Typical)
EE-SX1018 (infrared LED)
EE-SY169B (red LED)
2.4
Forward voltage VF (V)
Forward Voltage VF
12
Technical Information
Collector dissipation PC (mW)
■ Emitter
Ambient temperature Ta (°C)
In short, the forward current lower limit of the emitter of any
Photomicrosensor must be 5 mA minimum if the emitter has an
infrared LED and 2 mA minimum if the emitter has a red LED. If the
forward current of the emitter is too low, the optical output of the
emitter will not be stable. To find the ideal forward current value of
the Photomicrosensor, refer to the light current (IL) shown in the
datasheet of the Photomicrosensor. The light current (IL) indicates
the relationship between the forward current (IF) of the LED
incorporated by the Photomicrosensor and the output of the LED.
The light current (IL) is one of the most important characteristics. If
the forward current specified by the light current (IL) flows into the
emitter, even though there is no theoretical ground, the output of the
emitter will be stable. This characteristic makes it possible to design
the output circuits of the Photomicrosensor easily. For example, the
datasheet of EE-SX1018 indicates that a forward current (IF) of 20
mA is required.
Design Method
The following explains how the constants of a Photomicrosensor
must be determined. Figure 5 shows a basic circuit that drives the
LED incorporated by a Photomicrosensor.
The basic circuit absolutely requires a limiting resistor (R). If the LED
is imposed with a forward bias voltage without the limiting resistor,
the current of the LED is theoretically limitless because the forward
impedance of the LED is low. As a result the LED will burn out.
Users often ask OMRON about the appropriate forward voltage to be
imposed on the LED incorporated by each Photomicrosensor model
that they use. There is no upper limit of the forward voltage imposed
on the LED provided that an appropriate limiting resistor is
connected to the LED. There is, however, the lower limit of the
forward voltage imposed on the LED. As shown in Figure 3, the
lower limit of the forward voltage imposed on the LED must be at
least 1.2 to 2 V, or no forward current will flow into the LED. The
supply voltage of a standard electronic circuit is 5 V minimum.
Therefore, a minimum of 5 V should be imposed on the LED. A
system incorporating any Photomicrosensor must be designed by
considering the following.
1. Forward current (IF)
2. Limiting resistor (R) (refer to Figure 5)
As explained above, determine the optimum level of the forward
current (IF) of the LED. The forward current (IF) of the EE-SX1018,
for example, is 20 mA. Therefore, the resistance of the limiting
resistor connected to the LED must be decided so that the forward
current of the LED will be approximately 20 mA. The resistance of
the limiting resistor is obtained from the following.
The positions of the limiting resistor (R) and the LED in Figure 5 are
interchangeable. If the LED is imposed with reverse voltages
including noise and surge voltages, add a rectifier diode to the circuit
as shown in Figure 6. LEDs can be driven by pulse voltages, the
method of which is, however, rarely applied to Photomicrosensors.
In short, the following are important points required to operate any
Photomicrosensor.
A forward voltage (VF) of approximately 1.2 V is required if the
Photomicrosensor has an infrared LED and a forward voltage (VF) of
approximately 2 V is required if the Photomicrosensor has a red
LED.
The most ideal level of the forward current (IF) must flow into the LED
incorporated by the Photomicrosensor.
Decide the resistance of the limiting resistor connected to the LED
after deciding the value of the forward current (IF).
If the LED is imposed with a reverse voltage, connect a rectifier
diode to the LED in parallel with and in the direction opposite to the
direction of the LED.
Figure 6. Reverse Voltage Protection Circuit
VCC − VF
IF
In this case 5 V must be substituted for the supply voltage (VCC). The
forward voltage (VF) obtained from Figure 3 is approximately 1.2 V
when the forward current (IF) of the LED is 20 mA. Therefore, the
following resistance is obtained.
R=
VCC − VF
IF
5 to 1.2 V
= 190 Ω
20 mA
= approx. 180 to 220 Ω
The forward current (IF) varies with changes in the supply voltage
(VCC), forward voltage (VF), or resistance. Therefore, make sure that
there is some margin between the absolute maximum ratings and
the actual operating conditions of the Photomicrosensor.
R=
=
Figure 5. Basic Circuit
VCC
IF
R
VF
GND (ground)
Technical Information
13
Phototransistor Output
Characteristics of Detector Element
The changes in the current flow of the detector element with and
without an optical input are important characteristics of a detector
element. Figure 7 shows a circuit used to check how the current flow
of the phototransistor incorporated by a Photomicrosensor is
changed by the LED with or without an appropriate forward current
(IF) flow, provided that the ambient illumination of the
Photomicrosensor is ideal (i.e., 0 lx). When there is no forward
current (IF) flowing into the LED or the optical beam emitted from the
LED is intercepted by an opaque object, the ammeter indicates
several nanoamperes due to a current leaking from the
phototransistor. This current is called the dark current (ID). When the
forward current (IF) flows into the LED with no object intercepting the
optical beam emitted from the LED, the ammeter indicates several
milliamperes. This current is called the light current (IL).
The difference between the dark current and light current is 106
times larger as shown below.
• When optical beam to the phototransistor is interrupted
Dark current ID: 10–9 A
The dark current temperature and light current temperature
dependencies of the phototransistor incorporated by any
Photomicrosensor must not be ignored. The dark current
temperature dependency of the phototransistor increases when the
ambient temperature of the Photomicrosensor in operation is high or
the Photomicrosensor has a photoelectric Darlington transistor as
the detector element of the Photomicrosensor. Figure 8 shows the
dark current temperature dependency of the phototransistor
incorporated by the EE-SX1018.
Figure 8. Dark Current vs. Ambient Temperature
Characteristics (Typical) (EE-SX1018)
VCE = 10 V
0 lx
Dark current ID
■ Design of Systems Incorporating
Photomicrosensors (1)
• When optical beam to the phototransistor is not interrupted
Light current IL: 10–3 A
The standard light current of a phototransistor is 106 times as large
as the dark current of the phototransistor. This difference in current
can be applied to the sensing of a variety of objects.
Figure 7. Measuring Circuit
Ammeter
The ambient illumination of the LED and phototransistor
incorporated by the Photomicrosensor in actual operation is not 0 lx.
Therefore, a current larger than the dark current of the
phototransistor will flow into the phototransistor when the optical
beam emitted from the LED is interrupted. This current is rather
large and must not be ignored if the Photomicrosensor has a
photoelectric Darlington transistor, which is highly sensitive, as the
detector element of the Photomicrosensor. The dark current of the
phototransistor incorporated by any reflective Photomicrosensor
flows if there is no reflective object in the sensing area of the
reflective Photomicrosensor. Furthermore, due to the structure of the
reflective Photomicrosensor, a small portion of the optical beam
emitted from the LED reaches the phototransistor after it is reflected
inside the reflective Photomicrosensor. Therefore, the dark current
and an additional current will flow into the phototransistor if there is
no sensing object in the sensing area. This additional current is
called leakage current (ILEAK). The leakage current of the
phototransistor is several hundred nanoamperes and the dark
current of the phototransistor is several nanoamperes.
14
Technical Information
Ambient temperature Ta (°C)
Due to the temperature dependency of the phototransistor, the light
current (IL) of the phototransistor as the detector element of the
Photomicrosensor increases according to a rise in the ambient
temperature. As shown in Figure 9, however, the output of the LED
decreases according to a rise in the ambient temperature due to the
temperature dependency of the LED. An increase in the light current
of the phototransistor is set off against a decrease in the output of
the LED and consequently the change of the output of the
Photomicrosensor according to the ambient temperature is
comparatively small. Refer to Figure 10 for the light current
temperature dependency of the phototransistor incorporated by the
EE-SX1018.
The light current temperature dependency shown in Figure 10 is,
however, a typical example. The tendency of the light current
temperature dependency of each phototransistor is indefinite. This
means the temperature compensation of any Photomicrosensor is
difficult.
Figure 9. LED and Phototransistor Temperature
Characteristics (Typical)
A relative value of 100 is
based on a Ta of 25°C.
Relative value (%)
LED optical
output
Phototransistor light
current
Ambient temperature Ta (°C)
Figure 10. Relative Light Current vs. Ambient
Temperature Characteristics (EE-SX1018)
Relative light current (%)
Measurement condition
IF = 20 mA
VCE = 5 V
Ambient temperature Ta (°C)
Changes in Characteristics
The following explains the important points required for the
designing of systems incorporating Photomicrosensors by
considering worst case design technique. Worst case design
technique is a method to design systems so that the
Photomicrosensors will operate normally even if the characteristics
of the Photomicrosensors are at their worst. A system incorporating
any Photomicrosensor must be designed so that they will operate
even if the light current (IL) of the phototransistor is minimal and the
dark current (ID) and leakage current of the phototransistor are
maximal. This means that the system must be designed so that it will
operate even if the difference in the current flow of the
phototransistor between the time that the Photomicrosensor senses
an object and the time that the Photomicrosensor does not sense
the object is minimal.
The worst light current (IL) and dark current (ID) values of the
phototransistor incorporated by any Photomicrosensor is specified in
the datasheet of the Photomicrosensor. (These values are specified
in the specifications either as the minimum value or maximum
value.)
Table 1 shows the dark current (ID) upper limit and light current (IL)
lower limit values of the phototransistors incorporated by a variety of
Photomicrosensors.
Systems must be designed by considering the dark current (ID)
upper limit and light current (IL) lower limit values of the
phototransistors. Not only these values but also the following factors
must be taken into calculation to determine the upper limit of the
dark current (ID) of each of the phototransistors.
•
•
•
•
External light interference
Temperature rise
Power supply voltage
Leakage current caused by internal light reflection if the systems
use reflective Photomicrosensors.
The above factors increase the dark current (ID) of each
phototransistor.
As for the light current (IL) lower limit of each phototransistor, the
following factors must be taken into calculation.
• Temperature change
• Secular change
The above factors decrease the light current (IL) of each
phototransistor.
Table 2 shows the increments of the dark current (ID) and the
decrements of the light current (ID) of the phototransistors.
Therefore, if the EE-SX1018 is operated at a Ta of 60°C maximum
and a VCC of 10 V for approximately 50,000 hours, for example, the
dark current (ID) of the phototransistor incorporated by the EESX1018 will be approximately 4 μA and the light current (IL) of the
phototransistor will be approximately 0.5 mA because the dark
current (ID) of the phototransistor at a Ta of 25°C is 200
nanoamperes maximum and the light current (IL) of the
phototransistor at a Ta of 25°C is 0.5 mA minimum.
Table 3 shows the estimated worst values of a variety of
Photomicrosensors, which must be considered when designing
systems using these Photomicrosensors.
The dispersion of the characteristics of the Photomicrosensors must
be also considered, which is explained in detail later. The light
current (IL) of the phototransistor incorporated by each reflective
Photomicrosensor shown in its datasheet was measured under the
standard conditions specified by OMRON for its reflective
Photomicrosensors. The light current (IL) of any reflective
Photomicrosensor greatly varies with its sensing object and sensing
distance.
Technical Information
15
Table 1. Rated Dark Current (ID) and Light Current (IL) Values
Model
Upper limit (ID)
Lower limit (IL)
Condition
EE-SG3(-B)
200 nA
2 mA
IF = 15 mA
EE-SX1018, -SX1055
EE-SX1041, -SX1042
EE-SX1070, -SX1071
EE-SX198, -SX199
200 nA
0.5 mA
IF = 20 mA
EE-SB5(-B)
EE-SF5(-B)
EE-SY110
200 nA
0.2 mA
IF = 20 mA (see note)
Condition
VCE = 10 V, 0 lx
Ta = 25°C
VCE = 10 V
Ta = 25°C
---
Note: These values were measured under the standard conditions specified by OMRON for the corresponding Photomicrosensors.
Table 2. Dependency of Detector Elements on Various Factors
Elements
Dark current ID
Light current IL
Phototransistor
To be checked using experiment
Temperature rise
Increased by approximately 10 times with Increased by approximately 28 times with
a temperature rise of 25°C.
a temperature rise of 25°C.
Supply voltage
See Figure 11.
See Figure 12.
Temperature change
Approximately –20% to 10%
Approximately –20% to 10%
Secular change
(20,000 to 50,000 hours)
Note: For an infrared LED.
Decreased to approximately one-half of Decreased to approximately one-half of
the initial value considering the tempera- the initial value considering the temperature changes of the element.
ture changes of the element.
Relative dark current ID (%)
Figure 11. Dark Current Imposed Voltage Dependency
(Typical) (EE-SX1018)
A relative dark current value of 100
is based on a Ta of 25°C and a VCE
of 10 V.
Collector-emitter voltage VCE (V)
16
Photo-Darlington transistor
External light interference
Technical Information
To be checked using experiment
Table 3. Estimated Worst Values of a Variety of Photomicrosensors
Model
Estimated worst value (ID)
Estimated worst value (IL)
Condition
EE-SG3(-B)
4 nA
1 mA
IF = 15 mA
EE-SX1018, -SX1055
EE-SX1041, -SX1042
EE-SX1070, -SX1071
EE-SX198, -SX199
4 nA
0.25 mA
IF = 20 mA
EE-SB5(-B)
EE-SF5(-B)
EE-SY110
4 nA
0.1 mA
IF = 20 mA (see note)
Condition
VCE = 10 V, 0 lx
Ta = 60°C
VCE = 10 V,
Operating hours = 50,000 to
100,000 hrs
Ta = Topr
---
Note: These values were measured under the standard conditions specified by OMRON for the corresponding Photomicrosensors with an Infrared
LED.
Design of Basic Circuitry
The following explains the basic circuit incorporated by a typical
Photomicrosensor and the important points required for the basic
circuit.
The flowing currents (i.e., IL and ID) of the phototransistor
incorporated by the Photomicrosensor must be processed to obtain
the output of the Photomicrosensor. Refer to Figure 13 for the basic
circuit. The light current (IL) of the phototransistor will flow into the
resistor (RL) if the phototransistor receives an optical input and the
dark current (ID) and leakage current of the phototransistor will flow
into the resistor (RL) if the phototransistor does not receive any
optical input. Therefore, if the phototransistor receives an optical
input, the output voltage imposed on the resistor (RL) will be
obtained from the following.
IL x RL
If the phototransistor does not receive any optical input, the output
voltage imposed on the resistor (RL) will be obtained from the
following.
(ID + leakage current) x RL
The output voltage of the phototransistor is obtained by simply
connecting the resistor (RL) to the phototransistor. For example, to
obtain an output of 4 V minimum from the phototransistor when it is
ON and an output of 1 V maximum when the phototransistor is OFF
on condition that the light current (IL) of the phototransistor is 1 mA
and the leakage current of the phototransistor is 0.1 mA, and these
are the worst light current and leakage current values of the
phototransistor, the resistance of the resistor (RL) must be
approximately 4.7 kΩ. Then, an output of 4.7 V (i.e., 1 mA x 4.7 kΩ)
will be obtained when the phototransistor is ON and an output of
0.47 V (i.e., 0.1 mA x 4.7 kΩ) will be obtained when the
phototransistor is OFF. Practically, the output voltage of the
phototransistor will be more than 4.7 V when the phototransistor is
ON and less than 0.47 V when the phototransistor is OFF because
the above voltage values are based on the worst light current and
leakage current values of the phototransistor. The outputs obtained
from the phototransistor are amplified and input to ICs to make
practical use of the Photomicrosensor.
Figure 13. Basic Circuit
or
Output
Figure 14. Output Example
VCC = 10 V
Output voltage
RL = 4.7 kΩ
EE-SX1018
Technical Information
17
Design of Applied Circuit
Figure 17. Applied Circuit Example
The following explains the designing of the applied circuit shown in
Figure 15.
The light current (IL) of the phototransistor flows into R1 and R2 when
the phototransistor receives the optical beam emitted from the LED.
Part of the light current (IL) will flow into the base and emitter of Q1
when the voltage imposed on R2 exceeds the bias voltage (i.e.,
approximately 0.6 to 0.9 V) imposed between the base and emitter
of the transistor (Q1). The light current flowing into the base turns Q1
ON. A current will flow into the collector of Q1 through R3 when Q1 is
ON. Then, the electric potential of the collector will drop to a low
logic level. The dark current and leakage current of the
phototransistor flow when the optical beam emitted from the LED is
intercepted. The electric potential of the output of the phototransistor
(i.e., (ID + leakage current) x R2) is, however, lower than the bias
voltage between the base and emitter of Q1. Therefore, no current
will flow into the base of Q1 and Q1 will be OFF. The output of Q1 will
be at a high level. As shown in Figure 16, when the phototransistor is
ON, the phototransistor will be seemingly short-circuited through the
base and emitter of the Q1, which is equivalent to a diode, and if the
light current (IL) of the phototransistor is large and R1 is not
connected to the phototransistor, the light current (IL) will flow into Q1
and the collector dissipation of the phototransistor will be
excessively large.
The following items are important when designing the above applied
circuit:
• The voltage output (i.e., IL x R2) of the phototransistor receiving the
optical beam emitted from the LED must be much higher than the
bias voltage between the base and emitter of Q1.
• The voltage output (i.e., (ID + leakage current) x R2) of the phototransistor not receiving the optical beam emitted from the LED
must be much lower than the bias voltage between the base and
emitter of Q1.
Therefore, it is important to determine the resistance of R2. Figure
17 shows a practical applied circuit example using the EE-SX1018
Photomicrosensor at a supply voltage (VCC) of 5V to drive a 74series TTL IC. This applied circuit example uses R1 and R2 with
appropriate resistance values.
Figure 15. Applied Circuit
EE-SX1018
VCC = 5 V
R3
4.7 kW
R1
200 Ω
IC1
74-series TTL IC
R2
10 kΩ
Calculation of R2
The resistance of R2 should be decided using the following so that
the appropriate bias voltage (VBE(ON)) between the base and
emitter of the transistor (Q1) to turn Q1 ON will be obtained.
IC1 × R2 > VBE(ON)
IC1 = IL − IB
∴(IL − IB) x R2 > VBE(ON)
VBE(ON)
IL − I B
The bias voltage (VBE(ON)) between the base and emitter of Q1 is
approximately 0.8 V and the base current (IB) of Q1 is approximately
20 μA if Q1 is a standard transistor controlling small signals. The
estimated worst value of the light current (IL) of the phototransistor is
0.25 mA according to Table 3.
Therefore, the following is obtained.
∴R2 >
0.8 V
= approx. 3.48 kΩ
0.25 mA − 20 μA
R2 must be larger than the above result. Therefore, the actual
resistance of R2 must be two to three times as large as the above
result. In the above applied circuit example, the resistance of R2 is
10 kΩ.
R2 >
Verification of R2 Value
The resistance of R2 obtained from the above turns Q1 ON. The
following explains the way to confirm whether the resistance of R2
obtained from the above can turns Q1 OFF as well. The condition
required to turn Q1 OFF is obtained from the following.
(ID + α) x R2 < VBE(OFF)
Output
EE-SX1018
Figure 16. Equivalent Circuit
18
Technical Information
Substitute 10 kΩ for R2, 4 μA for the dark current (ID) according to
Table 3, and 10 μA for the leakage current on the assumption that
the leakage current is 10 μA in formula 3. The following is obtained.
(ID + a) × R2 > VBE(ON)
(4 μA + 10 μA) × 10 kΩ = 0.140 V
VBE(OFF) = 0.4 V
∴0.140 V < 0.4 V
The above result verifies that the resistance of R2 satisfies the
condition required to turn Q1 OFF.
If the appropriateness of the resistance of R2 has been verified, the
design of the circuit is almost complete.
R1
LED Forward Current (IF) Supply Circuit
As shown in Figure 16, when the phototransistor is ON, the
phototransistor will be seemingly short-circuited through the base
and emitter of the Q1, and if the light current (IL) of the
phototransistor is large and R1 is not connected to the
phototransistor, the light current will flow into Q1 and the collector
dissipation of the phototransistor will be excessively large. The
resistance of R1 depends on the maximum permissible collector
dissipation (PC) of the phototransistor, which can be obtained from
the datasheet of the Photomicrosensor. The resistance of R1 of a
phototransistor is several hundred ohms. In the above applied circuit
example, the resistance of R1 is 200 Ω.
If the resistance of R1 is determined, the design of the circuit is
complete.
It is important to connect a transistor to the phototransistor
incorporated by the Photomicrosensor to amplify the output of the
phototransistor, which increases the reliability and stability of the
Photomicrosensor. Such reliability and stability of the
Photomicrosensor cannot be achieved if the output of the
phototransistor is not amplified. The response speed and other
performance characteristics of the circuit shown in Figure 15 are far
superior to those of the circuit shown in Figure 13 because the
apparent impedance (i.e., load resistance) of the Photomicrosensor
is determined by R1, the resistance of which is comparatively small.
Recently, Photomicrosensors that have photo IC amplifier circuits
are increasing in number because they are easy to use and make it
possible to design systems using Photomicrosensors without
problem.
The LED in the above circuitry is an independent component, to
which an appropriate current must be supplied from an external
power supply. This is the most important item required by the
Photomicrosensor.
It is necessary to determine the appropriate forward current (IF) of
the LED that turns the photo IC ON. If the appropriate forward
current is determined, the Photomicrosensor can be easily used by
simply supplying power to the detector circuitry (i.e., the photo IC).
Refer to the datasheet of the Photomicrosensor to find the current of
the LED turning the photo IC ON. Table 4 is an extract of the
datasheet of the EE-SX301/EE-SX401.
■ Design of Systems Incorporating
Photomicrosensors (2)
Photo IC Output
Figure 18 shows the circuit configuration of the EE-SX301 or EESX401 Photomicrosensor incorporating a photo IC output circuit.
The following explains the structure of a typical Photomicrosensor
with a photo IC output circuit.
Figure 18. Circuit Configuration
Voltage
stabilizer
A
Temperature
compensation
preamplifier
Schmitt
switching
circuit
+
Output
OUT
transistor
K
Input
(GaAs infrared LED)
Output (Si photo IC)
-
Table 4. Abstract of Characteristics
Item
Symbol
EE-SX301, -SX401
Value
LED current when output IFTOFF
is turned OFF (EE-SX301)
Condition
8 mA max. VCC = 4.5 to 16 V
Ta = 25°C
LED current when output IFTON
is turned ON (EE-SX401)
To design systems incorporating EE-SX301 or EE-SX401
Photomicrosensors, the following are important points.
• A forward current equivalent to or exceeding the IFTOFF value must
flow into the LED incorporated by each EE-SX301 Photomicrosensors.
• A forward current equivalent to or exceeding the IFTON value must
flow into the LED incorporated by the EE-SX401 Photomicrosensors.
The IFTON value of the EE-SX301 is 8 mA maximum and so is the IFON
value of the EE-SX401. The forward current (IF) of LED incorporated
by the EE-SX301 in actual operation must be 8 mA or more and so
must the actual forward current of (IF) the LED incorporated by the
EE-SX401 in actual operation. The actual forward currents of the
LEDs incorporated by the EE-SX301 and EE-SX401 are limited by
their absolute maximum forward currents respectively. The upper
limit of the actual forward current of the LED incorporated by the EESX301 and that of the LED incorporated by the EE-SX401 must be
decided according Figure 19, which shows the temperature
characteristics of the EE-SX301 and EE-SX401. The forward current
(IF) of the EE-SX301 must be as large as possible within the
absolute maximum forward current and maximum ambient
temperature shown in Figure 19 and so must be the forward current
(IF) of the EE-SX401. The forward current (IF) of the EE-SX301 or
that of the EE-SX401 must not be close to 8 mA, otherwise the
photo IC of the EE-SX301 or that of the EE-SX401 may not operate
if there is any ambient temperature change, secular change that
reduces the optical output of the LED, or dust sticking to the LED.
The forward current (IF) values of the EE-SX301 and the EE-SX401
in actual operation must be twice as large as the IFOFF values of the
EE-SX301 and EE-SX401 respectively. Figure 20 shows the basic
circuit of a typical Photomicrosensor with a photo IC output circuit.
If the Photomicrosensor with a photo IC output circuit is used to drive
a relay, be sure to connect a reverse voltage absorption diode (D) to
the relay in parallel as shown in Figure 21.
Technical Information
19
Detector Circuit
Precautions
Supply a voltage within the absolute maximum supply voltage to the
positive and negative terminals of the photo IC circuit shown in
Figure 18 and obtain a current within the IOUT value of the output
transistor incorporated by the photo IC circuit.
The following provides the instructions required for the operation of
Photomicrosensors.
Collector dissipation Pc (mW)
Forward current IF (mA)
Figure 19. Forward Current vs. Ambient Tempera
ture Characteristics (EE-SX301/-SX401)
I F • PC
Ambient temperature Ta (°C)
Figure 20. Basic Circuit
VCC
Load
■ Transmissive Photomicrosensor
Incorporating Phototransistor Output
Circuit
When using a transmissive Photomicrosensor to sense the following
objects, make sure that the transmissive Photomicrosensor operates
properly.
• Highly permeable objects such as paper, film, and plastic
• Objects smaller than the size of the optical beam emitted by the
LED or the size of the aperture of the detector.
The above objects do not fully intercept the optical beam emitted by
the LED. Therefore, some part of the optical beam, which is
considered noise, reaches the detector and a current flows from the
phototransistor incorporated by the detector. Before sensing such
type of objects, it is necessary to measure the light currents of the
phototransistor with and without an object to make sure that the
transmissive Photomicrosensor can sense objects without being
interfered by noise. If the light current of the phototransistor sensing
any one of the objects is IL(N) and that of the phototransistor sensing
none of the objects is IL(S), the signal-noise ratio of the
phototransistor due to the object is obtained from the following.
S/N = IL(S)/IL(N)
The light current (IL) of the phototransistor varies with the ambient
temperature and secular changes. Therefore, if the signal-noise ratio
of the phototransistor is 4 maximum, it is necessary to pay utmost
attention to the circuit connected to the transmissive
Photomicrosensor so that the transmissive Photomicrosensor can
sense the object without problem. The light currents of
phototransistors are different to one another. Therefore, when
multiple transmissive Photomicrosensors are required, a variable
resistor must be connected to each transmissive Photomicrosensor
as shown in Figure 22 if the light currents of the phototransistors
greatly differ from one another.
OUT
Figure 22. Sensitivity Adjustment
VCC
GND
Figure 21. Connected to Inductive Load
Output
VCC
Relay
GND
GND
The optical beam of the emitter and the aperture of the detector
must be as narrow as possible. An aperture each can be attached to
the emitter and detector to make the optical beam of the emitter and
the aperture of the detector narrower. If apertures are attached to
both the emitter and detector, however, the light current (IL) of the
phototransistor incorporated by the detector will decrease. It is
desirable to attach apertures to both the emitter and detector. If an
aperture is attached to the detector only, the transmissive
Photomicrosensor will have trouble sensing the above objects when
they pass near the emitter.
Figure 23. Aperture Example
Aperture
20
Technical Information
When using the transmissive Photomicrosensor to sense any object
that vibrates, moves slowly, or has highly reflective edges, make
sure to connect a proper circuit which processes the output of the
transmissive Photomicrosensor so that the transmissive
Photomicrosensor can operate properly, otherwise the transmissive
Photomicrosensor may have a chattering output signal as shown in
Figure 24. If this signal is input to a counter, the counter will have a
counting error or operate improperly. To protect against this, connect
a 0.01- to 0.02-μF capacitor to the circuit as shown in Figure 25 or
connect a Schmitt trigger circuit to the circuit as shown in Figure 26.
Figure 27. Configuration of Reflective Photomicrosensor
Object
Emitter element
Detector element
Housing
Figure 24. Chattering Output Signal
VCC
Output
Chattering
output
Figure 28. Light Interception Characteristics of Filters
GND
Figure 25. Chattering Prevention (1)
Permeability (%)
VCC
Output
GND
EE-SF5
EE-SB5
Figure 26. Chattering Prevention (2)
VCC
Output
Schmitt trigger circuit (IC)
GND
■ Reflective Photomicrosensor
Incorporating Phototransistor Output
Circuit
When using a reflective Photomicrosensor to sense objects, pay
attention to the following so that the reflective Photomicrosensor
operates properly.
• External light interference
• Background condition of sensing objects
• Output level of the LED
The reflective Photomicrosensor incorporates a detector element in
the direction shown in Figure 27. Therefore, it is apt to be affected by
external light interference. The reflective Photomicrosensor,
therefore, incorporates a filter to intercept any light, the wavelength
of which is shorter than a certain wavelength, to prevent external
light interference. The filter does not, however, perfectly intercept the
light. Refer to Figure 28 for the light interception characteristics of
filters. A location with minimal external light interference is best
suited for the reflective Photomicrosensor.
Wavelength l (nm)
Figure 29. Influence of Background Object
Sensing object
Sensor
Background object
With regard to the background conditions, the following description is
based on the assumption that the background is totally dark.
Figure 29 shows that the optical beam emitted from the LED
incorporated by a reflective Photomicrosensor is reflected by a
sensing object and background object. The optical beam reflected
by the background object and received by the phototransistor
incorporated by the detector is considered noise that lowers the
signal-noise ratio of the phototransistor. If any reflective
Photomicrosensor is used to sense paper passing through the
sensing area of the reflective Photomicrosensor on condition that
there is a stainless steel or zinc-plated object behind the paper, the
light current (IL(N)) of the phototransistor not sensing the paper may
be larger than the light current (IL(S)) of phototransistor sensing the
paper, in which case remove the background object, make a hole
larger than the area of the sensor surface in the background object
as shown in Figure 30, coat the surface of the background object
with black lusterless paint, or roughen the surface of the
background. Most malfunctions of a reflective Photomicrosensor are
caused by an object located behind the sensing objects of the
reflective Photomicrosensor.
Unlike the output (i.e., IL) of any transmissive Photomicrosensor, the
Technical Information
21
light current (IL) of a reflective Photomicrosensor greatly varies
according to sensing object type, sensing distance, and sensing
object size.
Figure 30. Example of Countermeasure
Cutout
Light current IL (μA)
Figure 31. Sensing Distance Characteristics
(EE-SF5)
a: Aluminum
b: White paper with a reflection factor
of 90%
c: Pink paper
d: OHP sheet
e: Tracing paper
f: Black sponge
Ta = 25°
IF = 20 mA
VCE =10 V
The light current (IL) of the phototransistor incorporated by the
transmissive Photomicrosensor is output when there is no sensing
object in the sensing groove of the transmissive Photomicrosensor.
On the other hand, the light current (IL) of the phototransistor
incorporated by the reflective Photomicrosensor is output when
there is a standard object specified by OMRON located in the
standard sensing distance of the reflective Photomicrosensor. The
light current (IL) of the phototransistor incorporated by the reflective
Photomicrosensor varies when the reflective Photomicrosensor
senses any other type of sensing object located at a sensing
distance other than the standard sensing distance. Figure 31 shows
how the output of the phototransistor incorporated by the EE-SF5(B) varies according to varieties of sensing objects and sensing
distances. Before using the EE-SF5(-B) to sense any other type of
sensing objects, measure the light currents of the phototransistor in
actual operation with and without one of the sensing objects as
shown in Figure 32. After measuring the light currents, calculate the
signal-noise ratio of the EE-SF5(-B) due to the sensing object to
make sure if the sensing objects can be sensed smoothly. The light
current of the reflective Photomicrosensor is, however, several tens
to hundreds of microamperes. This means that the absolute signal
levels of the reflective Photomicrosensor are low. Even if the
reflective Photomicrosensor in operation is not interfered by external
light, the dark current (ID) and leakage current (ILEAK) of the reflective
Photomicrosensor, which are considered noise, may amount to
several to ten-odd microamperes due to a rise in the ambient
temperature. This noise cannot be ignored. As a result, the signalnoise ratio of the reflective Photomicrosensor will be extremely low if
the reflective Photomicrosensor senses any object with a low
reflection ratio.
Pay utmost attention when applying the reflective Photomicrosensor
to the sensing of the following.
• Marked objects (e.g., White objects with a black mark each)
• Minute objects
The above objects can be sensed if the signal-noise ratio of the
reflective Photomicrosensor is not too low.
The reflective Photomicrosensor must be used with great care,
otherwise it will not operate properly.
Figure 32. Output Current Measurement
Distance d (mm)
22
Technical Information
Actual operation
MEMO
23
Precautions
■ Correct Use
WARNING
Do not use this product in sensing devices designed
to provide human safety.
Precautions for Safe Use
· Use the product within the rated voltage range.
Applying voltages beyond the rated voltage ranges may result in
damage or malfunction to the product.
· Wire the product correctly and be careful with the power supply polarities.
Incorrect wiring may result in damage or malfunction to the product.
· Connect the loads to the power supply. Do not short-circuit the
loads.
Short-circuiting the loads may result in damage or malfunction to
the product.
3. Do not mount Photomicrosensors to plates stained with machining oil, otherwise the machining oil may cause cracks on the Photomicrosensors.
4. Do not impose excessive forces on Photomicrosensors mounted
to PCBs. Make sure that no continuous or instantaneous external
force exceeding 500 g (4.9 N) is imposed on any lead wire of the
Photomicrosensors.
PCB Mounting Holes
Unless otherwise specified, the PCB to which a Photomicrosensor is
mounted must have the following mounting holes.
Four Terminals
Terminal pitch ±0.1
Four, 0.8±0.1 dia.
Terminal
pitch ±0.1
Precautions for Correct Use
● Structure and Materials
Five Terminals
The emitter and detector elements of conventional
Photomicrosensors are fixed with transparent epoxy resin and the
main bodies are made of polycarbonate. Unlike ICs and transistors,
which are covered with black epoxy resin, Photomicrosensors are
subject to the following restrictions.
1. Low Heat Resistivity
The storage temperature of standard ICs and transistors is
approximately 150°C. The storage temperature of highly resistant
Photomicrosensors is 100°C maximum. The heat resistance of
the EE-SY169 Series which use ABS resin in the case, is particularly low (80°C maximum).
2. Low Mechanical Strength
Black epoxy resin, which is used for the main bodies of ICs and
transistors, contains additive agents including glass fiber to
increase the heat resistivity and mechanical strength of the main
bodies. Materials with additive agents cannot be used for the bodies of Photomicrosensors because Photomicrosensors must
maintain good optical permeability. Unlike ICs and transistors,
Photomicrosensors must be handled with utmost care because
Photomicrosensors are not as heat or mechanically resistant as
ICs and transistors. No excessive force must be imposed on the
lead wires of Photomicrosensors.
● Mounting
Screw Mounting
If Photomicrosensors have screw mounting holes, the
Photomicrosensors can be mounted with screws. Unless otherwise
specified, refer to the following when tighten the screws.
Hole diameter
Screw size
Tightening torque
1.5 dia.
M1.4
0.20 N • m
2.1 dia.
M2
0.34 N • m
3.2 dia.
M3
0.54 N • m
4.2 dia.
M4
0.54 N • m
Read the following before tightening the screws.
1. The use of a torque screwdriver is recommended to tighten each
of the screws so that the screws can be tightened to the tightening torque required.
2. The use of a screw with a spring washer and flat washer for the
mounting holes of a Photomicrosensor is recommended. If a
screw with a spring washer but without a flat washer is used for
any mounting hole, the part around the mounting hole may crack.
24
Precautions
Terminal pitch ±0.1
Five, 0.8±0.1 dia.
Terminal
pitch ±0.1
Terminal
pitch ±0.1
● Soldering
Lead Wires
Make sure to solder the lead wires of Photomicrosensors so that no
excessive force will be imposed on the lead wires. If an excessive
forces is likely to be imposed on the lead wires, hold the bases of the
lead wires.
Soldering Temperature
Regardless of the device being soldered, soldering should be
completed quickly so that the devices are not subjected to thermal
stress. Care is also required in the processing environment for
processes other than soldering so that the devices are not subject to
thermal stress or other external force.
1. Manual Soldering
Unless otherwise specified, the lead wires of Photomicrosensors
can be soldered manually under the following conditions.
These conditions must also be maintained when using lead-free
solder, i.e., soldering with lead-free solder is possible as long as
the following conditions are maintained.
Soldering temperature:
350°C max. (The temperature of the
tip of a 30-W soldering iron is approximately 320°C when the soldering iron
is heated up.)
Soldering time:
3 s max.
Soldering position:
At least 1.5 mm away from the bases
of the lead wires.
The temperature of the tip of any soldering iron depends on the
shape of the tip. Check the temperature with a thermometer
before soldering the lead wires. A highly resistive soldering iron
incorporating a ceramic heater is recommended for soldering the
lead wires.
2. Cleaning Method
Unless otherwise specified, Photomicrosensors other than the
EE-SA105 and EE-SA113 can be cleaned under the following
conditions. Do not apply an unclean detergent to the Photomicrosensors.
DIP cleaning:
OK
Ultrasonic cleaning:
Depends on the equipment and the PCB
size. Before cleaning Photomicrosensors,
conduct a cleaning test with a single Photomicrosensor and make sure that the
Photomicrosensor has no broken lead
wires after the Photomicrosensor is
cleaned.
Brushing:
The marks on Photomicrosensors may be
brushed off. The emitters and detectors of
reflective Photomicrosensors may have
scratches and deteriorate when they are
brushed. Before brushing Photomicrosensors, conduct a brushing test with a single
Photomicrosensor and make sure that the
Photomicrosensor is not damaged after it
is brushed.
2. Dip Soldering
The lead wires of Photomicrosensors can be dip-soldered under
the following conditions unless otherwise specified.
Preheating temperature: Must not exceed the storage temperature of the Photomicrosensors.
Soldering temperature:
260°C max. (the lead wires)
Soldering time:
10 s max.
Soldering position:
At least 0.3 mm away from the bases
of the housing.
The soldering temperature is specified as the temperature
applied to the lead terminals. Do not subject the cases to
temperatures higher than the maximum storage temperature. It is
also possible for the sensor case to melt due to residual heat of
the PCB. When using a PCB with a high thermal capacity (e.g.,
those using fiber-glass reinforced epoxy substrates), confirm that
the case is not deformed and install cooling devices as required
to prevent distortion. Particular care is required for the EE-SY169
Series, which use ABS resin in the case.
Do not use non-washable flux when soldering EE-SA-series
Photomicrosensors, otherwise the Photomicrosensors will have
operational problems. For other Photomicrosensors, check the
case materials and optical characteristics carefully to be sure that
residual flux does not adversely affect them.
3. Reflow Soldering
The reflow soldering of Photomicrosensors is not possible except
for the EE-SX1107, -SX1108, -SX1109, -SX1131, -SX4134 and
EE-SY1200. The reflow soldering of these products must be performed carefully under the conditions specified in the datasheets
of these products, respectively. Before performing the reflow soldering of these products, make sure that the reflow soldering
equipment satisfies the conditions.
Compared to general ICs, optical devices have a lower resistance
to heat. This means the reflow temperature must be set to a lower
temperature. Observe the temperature provides provided in the
specifications when mounting optical devices.
4. External Forces Immediately Following Soldering
The heat resistance and mechanical strength of Photomicrosensors are lower than those of ICs or transistors due to their physical properties. Care must thus be exercised immediately after
soldering (particularly for dip soldering) so that external forces
are not applied to the Photomicrosensors.
Observe the upper and lower limits of the operating and storage
temperature ranges for all devices and do not allow excessive
changes in temperature. As explained in the restrictions given in
Structure and Materials, elements use clear epoxy resin, giving them
less resistance to thermal stress than normal ICs or transistors
(which are sealed with black epoxy resin). Refer to reliability test
results and design PCBs so that the devices are not subjected to
excessive thermal stress.
Even for applications within the operating temperature range, care
must also be taken to control the humidity. As explained in the
restrictions given in Structure and Materials, elements use clear
epoxy resin, giving them less resistance to humidity than normal ICs
or transistors (which are sealed with black epoxy resin). Refer to
reliability test results and design PCBs so that the devices are not
subjected to excessive thermal stress. Photomicrosensors are
designed for application under normal humidities. When using them
in humidified or dehumidified, high-humidity or low-humidity,
environments, test performance sufficiently for the application.
External Forces
● LED Drive Currents
The heat resistivity and mechanical strength of Photomicrosensors
are lower than those of ICs or transistors. Do not to impose external
force on Photomicrosensors immediately after the
Photomicrosensors are soldered. Especially, do not impose external
force on Photomicrosensors immediately after the
Photomicrosensors are dip-soldered.
Photomicrosensors consist of LEDs and light detectors. Generally
speaking, temporal changes occur to LEDs when power is supplied
to them (i.e., the amount of light emitted diminishes). With less light,
the photoelectric current is reduced for a sensor with a
phototransistor output or the threshold current is increased for a
sensor with a photo-IC output. Design circuits with sufficient
consideration to the decline in the emitted light level. The reduction
in emitted light is far greater for red LEDs than for infrared LEDs.
Also, with red LEDs that contain aluminum, aluminum oxide will form
if they are powered under high humidities, calling for a greater need
for consideration of the decline in the emitted light level.
● Cleaning Precautions
Cleaning
Photomicrosensors except the EE-SA105 and EE-SA113 can be
cleaned subject to the following restrictions.
1. Types of Detergent
Polycarbonate is used for the bodies of most Photomicrosensors.
Some types of detergent dissolve or crack polycarbonate. Before
cleaning Photomicrosensors, refer to the following results of
experiments, which indicate what types of detergent are suitable
for cleaning Photomicrosensors other than the EE-SA105 and
EE-SA113.
Observe the law and prevent against any environmental damage
when using any detergent.
Results of Experiments
Ethyl alcohol:
OK
Methyl alcohol:
OK
Isopropyl alcohol:
OK
Trichlene:
NG
Acetone:
NG
Methylbenzene:
NG
Water (hot water):
The lead wires corrode depending on the
conditions
● Operating and Storage Temperatures
● Light Interceptors
Select a material for the light interceptor with superior interception
properties. If a material with inferior light interception properties,
such as a plastic that is not black, is used, light may penetrate the
interceptor and cause malfunction. With Photomicrosensors, most of
which use infrared LEDs, a material that appears black to the human
eye (i.e., in the visible light range) may be transparent to infrared
light. Select materials carefully.
Precautions
25
Guideline for Light Interceptors
When measuring the light interception properties of the light
interceptor, use 0.1% maximum light transmission as a guideline.
IF
IL
Vcc
OUT
RF
RL
GND
Criteria
Where,
IL1 is the IL for light reception
IL2 is the IL for light interception by the intercepter
VTH is the threshold voltage
IF1 is the IF for measurement of IL given in product specifications
IF2 is the IF in actual application ( = (VCC − VF)/RF = (VCC − 1.2)/RF)
ILMAX is the standard upper limit of the optical current IL
Then,
Light transmission = IL2/IL1 = α
Here there should be no problems if the following equation is
satisfied.
VTH ≥ (IF2/IF1) × ILMAX × RL × α
Caution is required, however, because there are inconsistencies in
light transmission.
● Reflectors
The reflectors for most Photomicrosensors are standardized to white
paper with a reflection ratio of 90%. Design the system to allow for
any differences in the reflection ratio of the detection object. With
Photomicrosensors, most of which use infrared LEDs, a material that
appears black to the human eye (i.e., in the visible light range) may
have a higher reflection ratio. Select materials carefully. Concretely,
marks made with dye-based inks or marks made with petroliumbased magic markers (felt pens) can have the same reflection ratio
for infrared light as white paper.
The reflectors for most Photomicrosensors are standardized to white
paper with a reflection ratio of 90%. Paper, however, disperses light
relatively easily, reducing the effect of the detection angle. Materials
with mirrored surfaces, on the other hand, show abrupt changes in
angle characteristics. Check the reflection ratio and angles
sufficiently for the application.
The output from most Photomicrosensors is determined at a
specified distance. Characteristics will vary with the distance.
Carefully check characteristics at the specific distance for the
application.
● Output Stabilization Time
Photomicrosensors with photo-IC outputs require 100 ms for the
internal IC to stabilize. Set the system so that the output is not read
for 100 ms after the power supply is turned ON. Also be careful if the
power supply is turned OFF in the application to save energy when
the Photomicrosensor is not used.
When using a Photomicrosensor with a phototransistor output
outside of the saturation region, stabilization time is required to
achieve thermal balance. Care is required when using a variable
resistor or other adjustment.
26
Precautions
MEMO
27
Photomicrosensor (Transmissive)
EE-SX1107
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Ultra-compact with a 3.4-mm-wide sensor and a 1-mm-wide slot.
• PCB surface mounting type.
• High resolution with a 0.15-mm-wide aperture.
■ Absolute Maximum Ratings (Ta = 25°C)
Item
Emitter
Optical
axis
Detector
Cross section AA
Recommended Soldering
Pattern
Internal Circuit
Ambient temperature
Terminal No.
Name
A
Anode
K
C
E
Cathode
Collector
Emitter
Unless otherwise specified, the
tolerances are ±0.15 mm.
Symbol
Rated value
Forward current
IF
25 mA
(see note 1)
Pulse forward current
IFP
100 mA
(see note 2)
Reverse voltage
VR
5V
Collector–Emitter
voltage
VCEO
20 V
Emitter–Collector
voltage
VECO
5V
Collector current
IC
20 mA
Collector dissipation
PC
75 mW
(see note 1)
Operating
Topr
–30°C to 85°C
Storage
Tstg
–40°C to 90°C
Reflow soldering
Tsol
255°C
(see note 3)
Manual soldering
Tsol
350°C
(see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. Duty: 1/100; Pulse width: 0.1 ms
3. Complete soldering within 10 seconds for reflow soldering
and within 3 seconds for manual soldering.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Forward voltage
Symbol
Value
VF
1.1 V typ., 1.3 V max.
Condition
IF = 5 mA
Reverse current
IR
10 μA max.
VR = 5 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
50 μA min., 150 μA typ.,
500 μA max.
IF = 5 mA, VCE = 5 V
Dark current
ID
100 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 50 μA
Peak spectral sensitivity wavelength
λP
900 nm typ.
---
Rising time
tr
10 μs typ.
VCC = 5 V, RL = 1 kΩ,
IL = 100 μA
Falling time
tf
10 μs typ.
VCC = 5 V, RL = 1 kΩ,
IL = 100 μA
28
EE-SX1107 Photomicrosensor (Transmissive)
■ Engineering Data
IF = 5 mA
Collector−Emitter voltage VCE (V)
Response time tr, tf (μs)
VCC = 5 V
Ta = 25°C
Load resistance RL (kΩ)
Response Time Measurement
Circuit
Light current IL (μA)
Sensing Position Characteristics
(Typical)
IF = 5 mA
VCE = 5 V
Distance d (mm)
VCE = 10 V
VCE =2 V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Relative light current IL (%)
Response Time vs. Load Resistance
Characteristics (Typical)
IF = 5 mA
VCE = 5 V
Dark current ID (nA)
IF = 10 mA
Forward current IF (mA)
Relative Light Current vs. Ambient
Dark Current vs. Ambient TemTemperature Characteristics (Typical) perature Characteristics (Typical)
Relative light current IL (%)
Light current IL (μA)
Ta = 25°C
Ta = 25°C
VCE = 5 V
Forward voltage VF (V)
Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Sensing Position Characteristics (Typical)
Relative light current IL (%)
Forward current IF (mA)
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
IF = 5 mA
VCE = 5 V
Distance d (mm)
Input
Output
90 %
10 %
Input
Output
EE-SX1107 Photomicrosensor (Transmissive)
29
Unit: mm (inch)
■ Tape and Reel
Reel
21±0.8 dia.
330±2 dia.
2±0.5
13±
0.5 dia.
80±1 dia.
Product name
Quantity
Lot number
12.4 +2
0
18.4 max.
Tape
1.5 dia.
Tape configuration
Terminating part
(40 mm min.)
Pull-out direction
Tape quantity
2,500 pcs./reel
30
Leading part
(400 mm min.)
Parts mounted
EE-SX1107 Photomicrosensor (Transmissive)
Empty
(40 mm min.)
Precautions
■ Soldering Information
Reflow soldering
• The following soldering paste is recommended:
Melting temperature: 216 to 220°C
Composition: Sn 3.5 Ag 0.75 Cu
• The recommended thickness of the metal mask for screen printing is between 0.2 and 0.25 mm.
• Set the reflow oven so that the temperature profile shown in the following chart is obtained for the upper surface of the product being soldered.
Temperature
1 to 5°C/s
260°C max.
255°C max.
230°C max.
1 to 5°C/s
150 to 180°C
120 sec
10 sec max.
40 sec max.
Time
Manual soldering
•
•
•
•
Use ”Sn 60” (60% tin and 40% lead) or solder with silver content.
Use a soldering iron of less than 25 W, and keep the temperature of the iron tip at 350°C or below.
Solder each point for a maximum of three seconds.
After soldering, allow the product to return to room temperature before handling it.
Storage
To protect the product from the effects of humidity until the package is opened, dry-box storage is recommended. If this is not possible, store the
product under the following conditions:
Temperature: 10 to 30°C
Humidity: 60% max.
The product is packed in a humidity-proof envelope. Reflow soldering must be done within 48 hours after opening the envelope, during which time
the product must be stored under 30°C at 80% maximum humidity.
If it is necessary to store the product after opening the envelope, use dry-box storage or reseal the envelope.
Baking
If a product has remained packed in a humidity-proof envelope for six months or more, or if more than 48 hours have lapsed since the envelope
was opened, bake the product under the following conditions before use:
Reel: 60°C for 24 hours or more
Bulk: 80°C for 4 hours or more
EE-SX1107 Photomicrosensor (Transmissive)
31
Photomicrosensor (Transmissive)
EE-SX1108
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Ultra-compact with a 5-mm-wide sensor and a 1-mm-wide slot.
• PCB surface mounting type.
• High resolution with a 0.3-mm-wide aperture.
■ Absolute Maximum Ratings (Ta = 25°C)
Item
Emitter
Optical
axis
Detector
Cross section AA
Recommended
Soldering Pattern
Internal Circuit
Ambient temperature
Terminal No.
Name
A
Anode
K
C
Cathode
Collector
E
Emitter
Symbol
Rated value
Forward current
IF
25 mA
(see note 1)
Pulse forward current
IFP
100 mA
(see note 2)
Reverse voltage
VR
5V
Collector–Emitter
voltage
VCEO
20 V
Emitter–Collector
voltage
VECO
5V
Collector current
IC
20 mA
Collector dissipation
PC
75 mW
(see note 1)
Operating
Topr
–30°C to 85°C
Storage
Tstg
–40°C to 90°C
Reflow soldering
Tsol
255°C
(see note 3)
Manual soldering
Tsol
350°C
(see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. Duty: 1/100; Pulse width: 0.1 ms
3. Complete soldering within 10 seconds for reflow soldering
and within 3 seconds for manual soldering.
Unless otherwise specified, the
tolerances are ±0.15 mm.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Forward voltage
Symbol
Value
VF
1.1 V typ., 1.3 V max.
Condition
IF = 5 mA
Reverse current
IR
10 μA max.
VR = 5 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
50 μA min., 150 μA typ.,
500 μA max.
IF = 5 mA, VCE = 5 V
Dark current
ID
100 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 50 μA
Peak spectral sensitivity wavelength
λP
900 nm typ.
---
Rising time
tr
10 μs typ.
VCC = 5 V, RL = 1 kΩ,
IL = 100 μA
Falling time
tf
10 μs typ.
VCC = 5 V, RL = 1 kΩ,
IL = 100 μA
32
EE-SX1108 Photomicrosensor (Transmissive)
■ Engineering Data
Ambient temperature Ta (°C)
Light Current vs. Forward Current
Characteristics (Typical)
Ta = 25°C
VCE = 5 V
Light current IL (μA)
Forward current IF (mA)
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
Forward current IF (mA)
Forward voltage VF (V)
IF = 5 mA
Collector−Emitter voltage VCE (V)
Response time tr, tf (μs)
VCC = 5 V
Ta = 25°C
Load resistance RL (kΩ)
IF = 5 mA
VCE = 5 V
Distance d (mm)
VCE = 10 V
VCE = 2 V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
Response Time vs. Load Resistance Characteristics (Typical)
Dark current ID (nA)
IF = 10 mA
IF = 5 mA
VCE = 5 V
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
Light current IL (μA)
Ta = 25°C
Relative light current IL (%)
Light Current vs. Collector−Emitter Relative Light Current vs. Ambient
Dark Current vs. Ambient TemVoltage Characteristics (Typical)
Temperature Characteristics (Typical) perature Characteristics (Typical)
IF = 5 mA
VCE = 5 V
Distance d (mm)
Response Time Measurement Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1108 Photomicrosensor (Transmissive)
33
Unit: mm (inch)
■ Tape and Reel
Reel
21±0.8 dia.
330±2 dia.
2±0.5
13±
0.5 dia.
80±1 dia.
Product name
Quantity
Lot number
12.4 +2
0
18.4 max.
Tape
1.5 dia.
Tape configuration
Terminating part
(40 mm min.)
Parts mounted
Pull-out direction
Tape quantity
2,000 pcs./reel
34
EE-SX1108 Photomicrosensor (Transmissive)
Leading part
(400 mm min.)
Empty
(40 mm min.)
Precautions
■ Soldering Information
Reflow soldering
• The following soldering paste is recommended:
Melting temperature: 216 to 220°C
Composition: Sn 3.5 Ag 0.75 Cu
• The recommended thickness of the metal mask for screen printing is between 0.2 and 0.25 mm.
• Set the reflow oven so that the temperature profile shown in the following chart is obtained for the upper surface of the product being soldered.
Temperature
1 to 5°C/s
260°C max.
255°C max.
230°C max.
1 to 5°C/s
150 to 180°C
120 sec
10 sec max.
40 sec max.
Time
Manual soldering
•
•
•
•
Use ”Sn 60” (60% tin and 40% lead) or solder with silver content.
Use a soldering iron of less than 25 W, and keep the temperature of the iron tip at 300°C or below.
Solder each point for a maximum of three seconds.
After soldering, allow the product to return to room temperature before handling it.
Storage
To protect the product from the effects of humidity until the package is opened, dry-box storage is recommended. If this is not possible, store the
product under the following conditions:
Temperature: 10 to 30°C
Humidity: 60% max.
The product is packed in a humidity-proof envelope. Reflow soldering must be done within 48 hours after opening the envelope, during which time
the product must be stored under 30°C at 80% maximum humidity.
If it is necessary to store the product after opening the envelope, use dry-box storage or reseal the envelope.
Baking
If a product has remained packed in a humidity-proof envelope for six months or more, or if more than 48 hours have lapsed since the envelope
was opened, bake the product under the following conditions before use:
Reel: 60°C for 24 hours or more
Bulk: 80°C for 4 hours or more
EE-SX1108 Photomicrosensor (Transmissive)
35
Photomicrosensor (Transmissive)
EE-SX1131
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
•
•
•
•
Ultra-compact with a 5-mm-wide sensor and a 2-mm-wide slot.
PCB surface mounting type.
High resolution with a 0.3-mm-wide aperture.
Dual-channel output.
■ Absolute Maximum Ratings (Ta = 25°C)
Item
Emitter
Optical
axis
Detector
Cross section AA
Recommended Soldering Pattern
Internal Circuit
Ambient temperature
Terminal No.
Name
A
Anode
NC
K
C
E1
E2
Not connected.
Cathode
Collector
Emitter 1
Emitter 2
Unless otherwise specified, the
tolerances are ±0.15 mm.
Symbol
Rated value
Forward current
IF
25 mA
(see note 1)
Pulse forward current
IFP
100 mA
(see note 2)
Reverse voltage
VR
5V
Collector–Emitter
voltage
VCEO
20 V
Emitter–Collector
voltage
VECO
5V
Collector current
IC
20 mA
Collector dissipation
PC
75 mW
(see note 1)
Operating
Topr
–30°C to 85°C
Storage
Tstg
–40°C to 90°C
Reflow soldering
Tsol
255°C
(see note 3)
Manual soldering
Tsol
350°C
(see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. Duty: 1/100; Pulse width: 0.1 ms
3. Complete soldering within 10 seconds for reflow soldering
and within 3 seconds for manual soldering.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Forward voltage
Symbol
Value
VF
1.1 V typ., 1.3 V max.
Condition
IF = 5 mA
Reverse current
IR
10 μA max.
VR = 5 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL1/IL2
50 μA min., 150 μA typ.,
500 μA max.
IF = 5 mA, VCE = 5 V
Dark current
ID
100 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 50 μA
Peak spectral sensitivity wavelength
λP
900 nm typ.
---
Rising time
tr
10 μs typ.
VCC = 5 V, RL = 1 kΩ,
IL = 100 μA
Falling time
tf
10 μs typ.
VCC = 5 V, RL = 1 kΩ,
IL = 100 μA
Detector
36
EE-SX1131 Photomicrosensor (Transmissive)
■ Engineering Data
Ambient temperature Ta (°C)
IF = 10 mA
IF = 5 mA
Light current IL (μA)
Dark Current vs. Ambient TemRelative Light Current vs. Ambient
Temperature Characteristics (Typical) perature Characteristics (Typical)
Collector−Emitter voltage VCE (V)
IF = 5 mA
VCE = 5 V
Relative light current IL (%)
Response time tr, tf (μs)
Load resistance RL (kΩ)
VCE = 10 V
VCE = 2 V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Response Time vs. Load Resistance Sensing Position Characteristics
Characteristics (Typical)
(Typical)
VCC = 5 V
Ta = 25°C
Ta = 25°C
VCE = 5 V
Forward current IF (mA)
Dark current ID (nA)
Light current IL (μA)
Ta = 25°C
Ta = 25°C
Forward voltage VF (V)
Relative light current IL (%)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
IF = 5 mA
VCE = 5 V
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
Forward current IF (mA)
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
IF = 5 mA
VCE = 5 V
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1131 Photomicrosensor (Transmissive)
37
Unit: mm (inch)
■ Tape and Reel
Reel
21±0.8 dia.
2±0.5
13±
0.5 dia.
330±2 dia.
80±1 dia.
Product name
Quantity
Lot number
12.4+2
0
18.4 max.
Tape
1.5 dia.
Tape configuration
Terminating part
(40 mm min.)
Parts mounted
Pull-out direction
Tape quantity
2,000 pcs./reel
38
EE-SX1131 Photomicrosensor (Transmissive)
Leading part
(400 mm min.)
Empty
(40 mm min.)
Precautions
■ Soldering Information
Reflow soldering
• The following soldering paste is recommended:
Melting temperature: 216 to 220°C
Composition: Sn 3.5 Ag 0.75 Cu
• The recommended thickness of the metal mask for screen printing is between 0.2 and 0.25 mm.
• Set the reflow oven so that the temperature profile shown in the following chart is obtained for the upper surface of the product being soldered.
Temperature
1 to 5°C/s
260°C max.
255°C max.
230°C max.
1 to 5°C/s
150 to 180°C
120 sec
10 sec max.
40 sec max.
Time
Manual soldering
•
•
•
•
Use ”Sn 60” (60% tin and 40% lead) or solder with silver content.
Use a soldering iron of less than 25 W, and keep the temperature of the iron tip at 300°C or below.
Solder each point for a maximum of three seconds.
After soldering, allow the product to return to room temperature before handling it.
Storage
To protect the product from the effects of humidity until the package is opened, dry-box storage is recommended. If this is not possible, store the
product under the following conditions:
Temperature: 10 to 30°C
Humidity: 60% max.
The product is packed in a humidity-proof envelope. Reflow soldering must be done within 48 hours after opening the envelope, during which time
the product must be stored under 30°C at 80% maximum humidity.
If it is necessary to store the product after opening the envelope, use dry-box storage or reseal the envelope.
Baking
If a product has remained packed in a humidity-proof envelope for six months or more, or if more than 48 hours have lapsed since the envelope
was opened, bake the product under the following conditions before use:
Reel: 60°C for 24 hours or more
Bulk: 80°C for 4 hours or more
EE-SX1131 Photomicrosensor (Transmissive)
39
Photomicrosensor (Transmissive)
EE-SX4134
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Ultra-compact model.
• Photo IC output model.
• Operates at a VCC of 2.2 to 7 V.
• PCB surface mounting type.
■ Absolute Maximum Ratings (Ta = 25°C)
Item
IF
25 mA (see note 1)
Reverse voltage
VR
5V
Detector
Supply voltage
VCC
9V
Output voltage
VOUT
17 V
Output current
IOUT
8 mA
Permissible output POUT
dissipation
Ambient
Operating
temperature Storage
Internal Circuit
V
O
K
G
Terminal No.
A
Name
Anode
K
Cathode
V
Supply voltage
(Vcc)
O
G
Output (OUT)
Ground (GND)
Unless otherwise specified, the
tolerances are ±0.15 mm.
Rated value
Forward current
Optical axis
A
Symbol
Emitter
80 mW (see note 1)
Topr
–25°C to 85°C
Tstg
–40°C to 90°C
Reflow soldering
Tsol
255°C (see note 2)
Manual soldering
Tsol
350°C (see note 2)
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. Complete soldering within 10 seconds for reflow soldering
and within 3 seconds for manual soldering.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.4 V max.
IF = 20 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 5 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Power supply voltage
VCC
2.2 V min., 7 V max.
---
Low-level output voltage VOL
0.12 V typ., 0.4 V max.
Vcc = 2.2 to 7 V, IOL = 8 mA, IF = 7 mA
High-level output current IOH
10 μA max.
Vcc = 2.2 to 7 V, IF = 0 mA, VOUT = 17 V
Current consumption
2.8 mA typ., 4 mA max.
Vcc = 7 V
870 mm typ.
Vcc = 2.2 to 7 V
2.0 mA typ., 3.5 mA max.
VCC = 2.2 to 7 V
ICC
Peak spectral sensitivity λP
wavelength
LED current when output is ON
IFT
Hysteresis
ΔH
21% typ.
VCC = 2.2 to 7 V (see note 1)
Response frequency
f
3 kHz min.
VCC = 2.2 to 7 V, IF = 5 mA, IOL = 8 mA (see note 2)
Response delay time
tPHL
7 μs typ.
VCC = 2.2 to 7 V, IF = 5 mA, IOL = 8 mA (see note 3)
Response delay time
tPLH
18 μs typ.
VCC = 2.2 to 7 V, IF = 5 mA, IOL = 8 mA (see note 3)
40
EE-SX4134 Photomicrosensor (Transmissive)
3. The following illustrations show the definition of response
delay time.
Note: 1. Hysteresis denotes the difference in forward LED
current value, expressed in percentage, calculated
from the respective forward LED currents when the
photo IC in turned from ON to OFF and when the
photo IC in turned from OFF to ON.
Input
2. The value of the response frequency is measured by
rotating the disk as shown below.
Output
Disk
2.1 mm
0.5 mm
0.5 mm
■ Engineering Data
Ta = 25°C
IF = 0 mA
Supply voltage VCC (V)
Low-level Output Voltage vs. Ambient Temperature Characteristics
(Typical)
Low-level Output Voltage vs.
Output Current (Typical)
Ta = 25°C
VCC = 5 V
IOL = 8 mA
IF = 7 mA
Output current IC (mA)
Response Delay Time vs. Forward
Current (Typical)
Response delay time tPHL, tPLH (μs)
Current consumption Icc (mA)
Current Consumption vs. Supply
Voltage (Typical)
Supply voltage VCC (V)
Forward voltage VF (V)
Ambient temperature Ta (°C)
Ta = 25°C
RL = 4.7 kΩ
LED current IFT (mA)
Forward current IF (mA)
Ta = 70°C
Low level output voltage VOL (V)
VCC = 5 V
RL = 4.7 kΩ
LED Current vs. Supply Voltage
(Typical)
VCC = 5 V
IF = 7 mA
IOL = 8 mA
IOL = 0.5 mA
Ambient temperature Ta (°C)
Repeat Sensing Position
Characteristics (Typical)
40
IF
Ta = 25°C
VCC = 5 V
RL = 4.7 kΩ
ICC
VCC
RL
35
OUT
VOUT
Output transistor
LED current IFT (mA)
LED Current vs. Ambient Temperature Characteristics (Typical)
Ta = −30°C
Ta = 25°C
Low level output voltage VOL (V)
Ambient temperature Ta (°C)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Output allowable dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
GND
30
25
20
tPLH
15
INPUT IF
t
10
OUTPUT
Ta = 25°C
IF = 5 mA
VCC = 5 V
RL = 4.7 kΩ
n = repeat 20 times
0.01
t
tPHL
tPLH
5
tPHL
0
0
5
10
15
20
25
Forward current IF (mA)
30
Distance d (mm)
EE-SX4134 Photomicrosensor (Transmissive)
41
Unit: mm (inch)
■ Tape and Reel
Reel
21±0.8 dia.
2±0.5
13±
0.5 dia.
330±2 dia.
80±1 dia.
Product name
Quantity
Lot number
12.4 +2
0
18.4 max.
Tape
1.5 dia.
Tape configuration
Parts mounted
Terminating part
(40 mm min.)
Pull-out direction
Leading part
(400 mm min.)
Empty
(40 mm min.)
Tape quantity
2,000 pcs./reel
42
EE-SX4134 Photomicrosensor (Transmissive)
Precautions
■ Soldering Information
Reflow soldering
• The following soldering paste is recommended:
Melting temperature: 216 to 220°C
Composition: Sn 3.5 Ag 0.75 Cu
• The recommended thickness of the metal mask for screen printing
is between 0.2 and 0.25 mm.
• Set the reflow oven so that the temperature profile shown in the following chart is obtained for the upper surface of the product being
soldered.
Temperature
1 to 5°C/s
260°C max.
255°C max.
230°C max.
1 to 5°C/s
150 to 180°C
120 sec
10 sec max.
40 sec max.
Time
Manual soldering
• Use”Sn 60” (60% tin and 40% lead) or solder with silver content.
• Use a soldering iron of less than 25 W, and keep the temperature
of the iron tip at 300°C or below.
• Solder each point for a maximum of three seconds.
• After soldering, allow the product to return to room temperature
before handling it.
Storage
To protect the product from the effects of humidity until the package
is opened, dry-box storage is recommended. If this is not possible,
store the product under the following conditions:
Temperature: 10 to 30°C
Humidity: 60% max.
The product is packed in a humidity-proof envelope. Reflow
soldering must be done within 48 hours after opening the envelope,
during which time the product must be stored under 30°C at 80%
maximum humidity.
If it is necessary to store the product after opening the envelope, use
dry-box storage or reseal the envelope.
Baking
If a product has remained packed in a humidity-proof envelope for six
months or more, or if more than 48 hours have lapsed since the
envelope was opened, bake the product under the following
conditions before use:
Reel: 60°C for 24 hours or more
Bulk: 80°C for 4 hours or more
EE-SX4134 Photomicrosensor (Transmissive)
43
Photomicrosensor (Transmissive)
EE-SX1109
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Ultra-compact with a 6-mm-wide sensor and a 3-mm-wide slot.
• PCB surface mounting type.
• High resolution with a 0.5-mm-wide aperture.
■ Absolute Maximum Ratings
(Ta = 25°C)
Item
Emitter
Optical
axis
Detector
Cross section AA
Recommended
Soldering Pattern
Internal Circuit
Ambient temperature
Terminal No.
A
K
C
E
Symbol
IF
25 mA
(see note 1)
Pulse forward current
IFP
100 mA
(see note 2)
Reverse voltage
VR
5V
Collector–Emitter
voltage
VCEO
20 V
Emitter–Collector
voltage
VECO
5V
Collector current
IC
20 mA
Collector dissipation
PC
75 mW
(see note 1)
Operating
Topr
–30°C to 85°C
Storage
Tstg
–40°C to 90°C
Reflow soldering
Tsol
255°C
(see note 3)
Manual soldering
Tsol
350°C
(see note 3)
Name
Anode
Cathode
Collector
Emitter
Rated value
Forward current
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. Duty: 1/100; Pulse width: 0.1 ms
3. Complete soldering within 10 seconds for reflow soldering
and within 3 seconds for manual soldering.
Unless otherwise specified, the
tolerances are ±0.15 mm.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
Condition
Forward voltage
VF
1.1 V typ., 1.3 V max.
Reverse current
IR
10 μA max.
VR = 5 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
50 μA min., 150 μA typ.,
500 μA max.
IF = 5 mA, VCE = 5 V
Dark current
ID
100 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 50 μA
Peak spectral sensitivity wavelength
λP
900 nm typ.
---
Rising time
tr
10 μs typ.
VCC = 5 V, RL = 1 kΩ,
IL = 100 μA
Falling time
tf
10 μs typ.
VCC = 5 V, RL = 1 kΩ,
IL = 100 μA
Emitter
Detector
44
EE-SX1109 Photomicrosensor (Transmissive)
IF = 5 mA
■ Engineering Data
Forward Current vs. Forward
Voltage Characteristics (Typical)
Forward current IF (mA)
Light current IL (μA)
Ta = 25°C
VCE = 5 V
Ambient temperature Ta (°C)
IF = 10 mA
IF = 5 mA
Collector−Emitter voltage VCE (V)
Response time tr, tf (μs)
VCC = 5 V
Ta = 25°C
Load resistance RL (kΩ)
VCE = 10 V
VCE = 2 V
Ambient temperature Ta (°C)
Sensing Position Characteristics (Typical)
Relative light current IL (%)
Response Time vs. Load Resistance Characteristics (Typical)
IF = 5 mA
VCE = 5 V
IF = 5 mA
VCE = 5 V
Distance d (mm)
Ambient temperature Ta (°C)
Sensing Position Characteristics (Typical)
Relative light current IL (%)
Light current IL (μA)
Ta = 25°C
Forward current IF (mA)
Forward voltage VF (V)
Relative Light Current vs. Ambient
Dark Current vs. Ambient TemperTemperature Characteristics (Typical) ature Characteristics (Typical)
Relative light current IL (%)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Dark current ID (nA)
Forward current IF (mA)
Collector dissipation PC (mW)
Forward Current vs. Collector Dissipation Temperature Rating
IF = 5 mA
VCE = 5 V
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1109 Photomicrosensor (Transmissive)
45
Unit: mm (inch)
■ Tape and Reel
Reel
21±0.8 dia.
330+2 dia.
2±0.5
13±
0.5 dia.
80±1 dia.
Product name
Quantity
Lot No.
12.4+2
0
18.4 max.
Tape
1.5 dia.
Tape configuration
Terminating part
(40 mm min.)
Parts mounted
Pull-out direction
Tape quantity
1,000 pcs./reel
46
EE-SX1109 Photomicrosensor (Transmissive)
Leading part
(400 mm min.)
Empty
(40 mm min.)
Precautions
■ Soldering Information
Reflow soldering
• The following soldering paste is recommended:
Melting temperature: 216 to 220°C
Composition: Sn 3.5 Ag 0.75 Cu
• The recommended thickness of the metal mask for screen printing is between 0.2 and 0.25 mm.
• Set the reflow oven so that the temperature profile shown in the following chart is obtained for the upper surface of the product being soldered.
Temperature
1 to 5°C/s
260°C max.
255°C max.
230°C max.
1 to 5°C/s
150 to 180°C
120 sec
10 sec max.
40 sec max.
Time
Manual soldering
•
•
•
•
Use ”Sn 60” (60% tin and 40% lead) or solder with silver content.
Use a soldering iron of less than 25 W, and keep the temperature of the iron tip at 300°C or below.
Solder each point for a maximum of three seconds.
After soldering, allow the product to return to room temperature before handling it.
Storage
To protect the product from the effects of humidity until the package is opened, dry-box storage is recommended. If this is not possible, store the
product under the following conditions:
Temperature: 10 to 30°C
Humidity: 60% max.
The product is packed in a humidity-proof envelope. Reflow soldering must be done within 48 hours after opening the envelope, during which time
the product must be stored under 30°C at 80% maximum humidity.
If it is necessary to store the product after opening the envelope, use dry-box storage or reseal the envelope.
Baking
If a product has remained packed in a humidity-proof envelope for six months or more, or if more than 48 hours have lapsed since the envelope
was opened, bake the product under the following conditions before use:
Reel: 60°C for 24 hours or more
Bulk: 80°C for 4 hours or more
EE-SX1109 Photomicrosensor (Transmissive)
47
Photomicrosensor (Transmissive)
EE-SX1235A-P2
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
•
•
•
•
•
Four, R0.5
(3) A
(2) K, E
(1) C
8
7.6
4
3.2 (Aperture width)
±0.2
Post header 292250-3
(Tyco Electronics AMP)
8.5
5
■ Absolute Maximum Ratings (Ta = 25°C)
(11)
5
5
Item
Optical
axis
(10.1)
12.6
A
5.6
8.9
0.5 (Aperture width)
(5.8)
6
Snap-in mounting model.
Mounts to 1.0-, 1.2- and 1.6-mm-thick PCBs.
High resolution with a 0.5-mm-wide aperture.
5-mm-wide slot.
Connects to Tyco Electronics AMP’s CT-series connectors.
0.8
(see
note)
Emitter
+0.1
−0.15
(4.6)
0.7 +0.15
−0.1
(1.2)
1.1 +0.1
−0.05
1.3 −+0.1
0.05
0.05
1.7 −+0.15
3.3
1.1+0.1
−0.05
17
Internal Circuit
6
+0.1
3.5 −0.2
5.8 +0.1
−0.2
7.3 +0.1
−0.2
(10)
Detector
Note: The asterisked dimension is
specified by datum A only.
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Terminal No.
Name
A
C
Anode
Collector
K, E
Cathode,
Emitter
Rated value
IF
50 mA
(see note)
Pulse forward current
IFP
---
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
5V
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note)
Operating
Topr
–25°C to 95°C
Storage
Tstg
–40°C to 100°C
Tsol
---
A
7.6 +1
−0.3
3 ±0.2
5.8 +0.1
−0.2
7.3 +0.1
−0.2
Symbol
Forward current
Ambient temperature
Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
Soldering temperature
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
Note: Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
18 < mm ≤ 30
±0.65
Recommended Mating Connectors:
Tyco Electronics AMP 173977-3 (press-fit connector)
175778-3 (crimp connector)
179228-3 (crimp connector)
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 30 mA
Light current
IL
0.6 mA min., 14 mA max.
IF = 20 mA, VCE = 5 V
Dark current
ID
200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.3 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 5 V
Rising time
tr
8 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 1 mA
Falling time
tf
8 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 1 mA
Emitter
Detector
48
EE-SX1235A-P2 Photomicrosensor (Transmissive)
IF = 30 mA
■ Engineering Data
IF = 30 mA
IF = 20 mA
IF = 10 mA
Relative light current IL (%)
Light current IL (mA)
IF = 40 mA
Collector−Emitter voltage VCE (V)
Response Time vs. Load Resistance Characteristics (Typical)
Light current IL (mA)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Ta = 25°C
IF = 50 mA
Ta = 25°C
VCE = 10 V
Forward voltage VF (V)
Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Forward current IF (mA)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
VCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
Dark current ID (nA)
PC
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
(Center of
optical axis)
Distance d (mm)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
Relative light current IL (%)
Response time tr, tf (μs)
Load resistance RL (kΩ)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Relative light current IL (%)
120
VCC = 5 V
Ta = 25°C
80
d
60
40
20
0
−2.0
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
10%
90%
Input
VCC
Output
GND
Refer to EE-SX4235A-P2 on page 52.
EE-SX1235A-P2 Photomicrosensor (Transmissive)
49
Photomicrosensor (Transmissive)
EE-SX3239-P2
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
•
•
•
•
•
•
Post header
292250-3 (Tyco Electronics AMP)
(2.4),
Aperture
width
Snap-in mounting model.
Mounts to 1.0-, 1.2- and 1.6-mm-thick panels.
High resolution with a 0.5-mm-wide sensing aperture.
With a 5-mm-wide slot.
Photo IC output signals directly connect with C-MOS and TTL.
Connects to Tyco Electronics AMP’s CT-series connectors.
■ Absolute Maximum Ratings (Ta = 25°C)
0.5,
Aperture width
Item
Symbol
Rated value
Power supply voltage
VCC
7V
Output voltage
VOUT
28 V
Output current
IOUT
16 mA
Permissible output dissipation
POUT
250 mW
(see note)
Ambient temper- Operating
ature
Storage
Topr
–20°C to 75°C
Tstg
–40°C to 85°C
Soldering temperature
Tsol
---
Note: The asterisked dimension
Note: Refer to the temperature rating chart if the ambient temperais specified by datum A
ture exceeds 25°C.
only.
Internal Circuit
Unless otherwise specified, the
tolerances are as shown below.
V
O
Dimensions
Tolerance
G
3 mm max.
±0.3
Name
3 < mm ≤ 6
±0.375
V
Power supply
(Vcc)
6 < mm ≤ 10
±0.45
O
G
Output (OUT)
Ground (GND)
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Terminal No.
Recommended Mating Connectors:
Tyco Electronics AMP 175778-3 (crimp connector)
173977-3 (press-fit connector)
179228-3 (crimp connector)
■ Electrical and Optical Characteristics (Ta = 25°C, VCC = 5 V ±10%)
Item
Symbol
Value
Condition
Current consumption
ICC
16.5 mA max.
With and without incident
Low-level output voltage
VOL
0.35 V max.
IOUT = 16 mA
without incident (EE-SX3239-P2)
High-level output voltage
VOH
(VCC x 0.9) V min.
VOUT = VCC with incident (EE-SX3239-P2),
RL = 47 kΩ
Response frequency
f
3 kHz min.
VOUT = VCC, RL = 47 kΩ (see note)
Note: The value of the response frequency is measured by
rotating the disk as shown below.
Disk
2.1 mm
0.5 mm
50
0.5 mm
t = 0.2 mm
EE-SX3239-P2 Photomicrosensor (Transmissive)
■ Engineering Data
VCC = 5 V
Ta = 25°C
RL = 47 kΩ
Center of optical axis
Light interrupting plate
Output transistor
d1 = 0±0.3 mm
Sensing Position Characteristics
(Typical)
d2 = 0±1.1 mm
VCC = 5 V
Ta = 25°C
RL = 47 kΩ
Distance d (mm)
d
OFF
d2
ON
−3
Ambient temperature Ta (°C)
Center of optical axis
Sensing Position Characteristics
(Typical)
Output transistor
Output allowable dissipation Pc (mW)
Output Allowable Dissipation vs.
Ambient Temperature Characteristics
−2
−1
0
1
2
3
Distance d (mm)
■ Recommended Mounting Holes
• When mounting the Photomicrosensor to a panel with a hole opened by pressing, make sure that the hole has no burrs. The mounting strength
of the Photomicrosensor will decrease if the hole has burrs.
• When mounting the Photomicrosensor to a panel with a hole opened by pressing, be sure to mount the Photomicrosensor on the pressing side
of the panel.
• The mounting strength of the Photomicrosensor will increase if the Photomicrosensor is mounted to a panel with a hole that is only a little larger
than the size of the Photomicrosensor, in which case, however, it will be difficult to mount the Photomicrosensor to the panel. The mounting
strength of the Photomicrosensor will decrease if the Photomicrosensor is mounted to a panel with a hole that is comparatively larger than the
size of the Photomicrosensor, in which case, however, it will be easy to mount the Photomicrosensor to the panel. When mounting the Photomicrosensor to a panel, open an appropriate hole for the Photomicrosensor according to the application.
• After mounting the Photomicrosensor to any panel, make sure that the Photomicrosensor does not wobble.
• When mounting the Photomicrosensor to a molding with a hole, make sure that the edges of the hole are sharp enough, otherwise the Photomicrosensor may fall out.
EE-SX3239-P2 Photomicrosensor (Transmissive)
51
Photomicrosensor (Transmissive)
EE-SX4235A-P2
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
•
•
•
•
•
•
292250-3
(Tyco Electronics AMP)
Four, R0.5
7.6±0.2
■ Absolute Maximum Ratings (Ta = 25°C)
0.5 (Aperture
width)
(1.2)
Snap-in mounting model.
Mounts to 1.0-, 1.2- and 1.6-mm-thick panels.
High resolution with a 0.5-mm-wide sensing aperture.
With a 5-mm-wide slot.
Photo IC output signals directly connect with C-MOS and TTL.
Connects to Tyco Electronics AMP’s CT-series connectors.
Optical
axis
Item
(see
note)
3.2
(Aperture
width)
Note: The dimension is specified
by datum A only.
Symbol
Rated value
Power supply voltage
VCC
7V
Output voltage
VOUT
28 V
Output current
IOUT
16 mA
Permissible output dissipation
POUT
250 mW
(see note)
Ambient temper- Operating
ature
Storage
Topr
–25°C to 75°C
Tstg
–40°C to 85°C
Soldering temperature
Tsol
---
Internal Circuit
O
Dimensions
G
3 mm max.
Terminal No.
Note: Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
Unless otherwise specified, the
tolerances are as shown below.
V
Name
V
Power supply
(Vcc)
O
G
Output (OUT)
Ground (GND)
Tolerance
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Recommended Mating Connectors:
Tyco Electronics AMP 179228-3 (crimp connector)
175778-3 (crimp connector)
173977-3 (press-fit connector)
■ Electrical and Optical Characteristics (Ta = 25°C, VCC = 5 V ±10%)
Item
Symbol
Current consumption
Value
ICC
16.5 mA max.
Condition
With and without incident
Low-level output voltage
VOL
0.35 V max.
IOUT = 16 mA with incident
High-level output voltage
VOH
(VCC x 0.9) V min.
VOUT = VCC without incident, RL = 47 kΩ
Response frequency
f
3 kHz min.
VOUT = VCC, RL = 47 kΩ (see note)
Note: The value of the response frequency is measured by
rotating the disk as shown below.
Disk
2.1 mm
0.5 mm
52
0.5 mm
t = 0.2 mm
EE-SX4235A-P2 Photomicrosensor (Transmissive)
■ Engineering Data
VCC = 5 V
Ta = 25°C
RL = 47 kΩ
Center of optical axis
Light interrupting plate
Output transistor
d1 = 0±0.3 mm
d2 = 0±1.3 mm V = 5 V
CC
Ta = 25°C
RL = 47 kΩ
d
OFF
d2
ON
−3
Ambient temperature Ta (°C)
Center of optical axis
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
Output transistor
Output allowable dissipation Pc (mW)
Output Allowable Dissipation vs.
Ambient Temperature Characteristics
−2
−1
0
1
2
3
Distance d (mm)
Distance d (mm)
■ Recommended Mounting Holes
3.7±0.1
17.1±0.1
(for t =1.0,1.2,1.6)
t = 1.0 mm
t = 1.2 mm
t = 1.6 mm
• When mounting the Photomicrosensor to a panel with a hole opened by pressing, make sure that the hole has no burrs. The mounting strength
of the Photomicrosensor will decrease if the hole has burrs.
• When mounting the Photomicrosensor to a panel with a hole opened by pressing, be sure to mount the Photomicrosensor on the pressing side
of the panel.
• The mounting strength of the Photomicrosensor will increase if the Photomicrosensor is mounted to a panel with a hole that is only a little larger
than the size of the Photomicrosensor, in which case, however, it will be difficult to mount the Photomicrosensor to the panel. The mounting
strength of the Photomicrosensor will decrease if the Photomicrosensor is mounted to a panel with a hole that is comparatively larger than the
size of the Photomicrosensor, in which case, however, it will be easy to mount the Photomicrosensor to the panel. When mounting the Photomicrosensor to a panel, open an appropriate hole for the Photomicrosensor according to the application.
• After mounting the Photomicrosensor to any panel, make sure that the Photomicrosensor does not wobble.
• When mounting the Photomicrosensor to a molding with a hole, make sure that the edges of the hole are sharp enough, otherwise the Photomicrosensor may fall out.
EE-SX4235A-P2 Photomicrosensor (Transmissive)
53
Photomicrosensor (Transmissive)
EE-SX460-P1
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
•
•
•
•
•
•
171826-3
(Tyco Electronics AMP)
Optical
axis
Snap-in mounting model.
Mounts to 0.8- to 1.6-mm-thick panels.
High resolution (aperture width of 0.5 mm)
With a 5-mm-wide slot.
Photo IC output signals directly connect with C-MOS and TTL.
Connects to Tyco Electronics AMP’s EI-series connectors.
■ Absolute Maximum Ratings (Ta = 25°C)
0.5 (Aperture
width)
Optical
axis
Two,
R1
15±0.2
Item
Symbol
VCC
10 V
Output voltage
VOUT
28 V
Output current
IOUT
16 mA
Permissible output dissipation
POUT
250 mW
(see note)
Ambient temper- Operating
ature
Storage
Topr
–20°C to 75°C
Tstg
–40°C to 85°C
Soldering temperature
Tsol
---
Mounting face
Internal Circuit
V
Rated value
Power supply voltage
Note: Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
Unless otherwise specified, the
tolerances are as shown below.
O
G
Terminal No.
V
O
G
Dimensions
Tolerance
3 mm max.
±0.3
Name
3 < mm ≤ 6
±0.375
Power supply
(Vcc)
6 < mm ≤ 10
±0.45
Output (OUT)
Ground (GND)
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Recommended Mating Connectors:
Tyco Electronics AMP 171822-3 (crimp connector)
172142-3 (crimp connector)
OMRON
EE-1005 (with harness)
■ Electrical and Optical Characteristics (Ta = 25°C, VCC = 5 V±10%)
Item
Symbol
Value
Condition
Current consumption
ICC
30 mA max.
With and without incident
Low-level output voltage
VOL
0.3 V max.
IOUT = 16 mA with incident
High-level output voltage
VOH
(VCC x 0.9) V min.
VOUT = VCC without incident, RL = 47 kΩ
Response frequency
f
3 kHz min.
VOUT = VCC, RL = 47 kΩ (see note)
Note: The value of the response frequency is measured by
rotating the disk as shown below.
Disk
2.1 mm
0.5 mm
54
0.5 mm
t = 0.2 mm
EE-SX460-P1 Photomicrosensor (Transmissive)
■ Engineering Data
d1 = 0±0.3 mm
Light interrupting plate
Center of optical axis
Output transistor
VCC = 5 V
Ta = 25°C
RL = 47 kΩ
d2 = 0±1.1 mm
VCC = 5 V
Ta = 25°C
RL = 47 kΩ
d
OFF
d2
ON
−3
Distance d (mm)
Ambient temperature Ta (°C)
Center of optical axis
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
Output transistor
Output allowable dissipation Pc (mW)
Output Allowable Dissipation vs.
Ambient Temperature Characteristics
−2
−1
0
1
2
3
Distance d (mm)
EE-1005 Connector
1,000±20
(1) (2)
No.
(3)
Name
Model
Quantity
Wiring
Maker
1
Receptacle 171822-3
housing
1
Tyco Electronics
AMP
2
Receptacle 170262-1
contact
3
Tyco Electronics
AMP
3
Lead wire
3
---
UL1007 AWG24
Connector
circuit no.
Lead wire color
Output when connected to
EE-SX460-P1
1
Red
VCC
2
Orange
OUT
3
Yellow
GND
■ Recommended Mounting Hole Dimensions and Mounting and Dismounting Method
Dismounting by Hand
Squeeze the mounting tabs as shown in the following illustration and
press the mounting tabs upwards.
Center of sensing
slot
Optical axis
EE-SX460-P1
Sensor edge
Sensor edge on
connector side
(2)
The Photomicrosensor can be mounted to 0.8- to 1.6-mm-thick
panels.
Refer to the above mounting hole dimensions and open the
mounting holes in the panel to which the Photomicrosensor will be
mounted.
Insert into the holes the Photomicrosensor’s mounting portions with
a force of three to five kilograms but do not press in the
Photomicrosensor at one time. The Photomicrosensor can be easily
mounted by inserting the mounting portions halfway and then slowly
pressing the Photomicrosensor onto the panel.
There are two ways to dismount the Photomicrosensor. Refer to the
following.
Dismounting with Screwdriver
Press the mounting hooks of the Photomicrosensor with a flat-blade
screwdriver as shown in the following illustration and pull up the
Photomicrosensor.
Panel
(1)
(1)
Pressed mounting holes are ideal for mounting the
Photomicrosensor. When mounting the Photomicrosensor to a panel
that has pressed mounting holes for the Photomicrosensor, be sure
to mount the Photomicrosensor on the pressing side of the panel,
otherwise it may be difficult to mount the Photomicrosensor and an
insertion force of five to six kilograms may be required.
When mounting the Photomicrosensor to a panel that has mounting
holes opened by pressing, make sure that the mounting holes have
no burrs, otherwise the lock mechanism of the Photomicrosensor will
not work perfectly. After mounting the Photomicrosensor to a panel,
be sure to check if the lock mechanism is working perfectly.
EE-SX460-P1
EE-SX460-P1
Flat-blade
screwdriver
(2)
Flat-blade
(2) screwdriver
(1)
(1)
Mounting hook
Panel
Mounting hook
This tapered portion must be on
the lower side of the panel, other
wise the Photomicrosensor will
not be locked in.
Panel
Mounting tab
EE-SX460-P1 Photomicrosensor (Transmissive)
55
Photomicrosensor (Transmissive)
EE-SX461-P11
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
•
•
•
•
•
171826-3 (Tyco
Electronics AMP)
Snap-in-mounting model.
Mounts to 0.8- to 1.6-mm-thick panels.
With a 15-mm-wide slot.
Photo IC output signals directly connect with C-MOS and TTL.
Connects to Tyco Electronics AMP’s EI-series connectors.
■ Absolute Maximum Ratings (Ta = 25°C)
Item
2 (Aperture
width)
Optical
axis
Two, R1
Symbol
Rated value
Power supply voltage
VCC
7V
Output voltage
VOUT
28 V
Output current
IOUT
16 mA
Permissible output dissipation
POUT
250 mW
(see note)
Ambient temper- Operating
ature
Storage
Topr
–20°C to 75°C
Tstg
–40°C to 85°C
Soldering temperature
Tsol
---
(15)
Note: Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
Internal Circuit
V
Unless otherwise specified, the
tolerances are as shown below.
O
G
Dimensions
3 mm max.
Terminal No.
V
O
G
Name
3 < mm ≤ 6
Tolerance
±0.3
±0.375
Power supply
(Vcc)
6 < mm ≤ 10
±0.45
Output (OUT)
Ground (GND)
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Recommended Mating Connectors:
Tyco Electronics AMP 171822-3 (crimp connector)
172142-3 (crimp connector)
OMRON
EE-1005 (with harness)
■ Electrical and Optical Characteristics (Ta = 25°C, VCC = 5 V±10%)
Item
Symbol
Current consumption
Value
ICC
35 mA max.
Condition
With and without incident
Low-level output voltage
VOL
0.3 V max.
IOUT = 16 mA with incident
High-level output voltage
VOH
(VCC x 0.9) V min.
VOUT = VCC without incident, RL = 47 kΩ
Response frequency
f
3 kHz min.
VOUT = VCC, RL = 47 kΩ (see note)
Note: The value of the response frequency is measured by
rotating the disk as shown below.
Disk
2.1 mm
0.5 mm
56
0.5 mm
t = 0.2 mm
EE-SX461-P11 Photomicrosensor (Transmissive)
■ Engineering Data
Sensing Position Characteristics
(Typical)
d2 = 0±1.1 mm
Output transistor
Light interrupting plate
Center of optical axis
VCC = 5 V
Ta = 25°C
RL = 47 kΩ
d
OFF
d2
ON
−3
Ambient temperature Ta (°C)
Center of optical axis
Sensing Position Characteristics
(Typical)
VCC = 5 V
Ta = 25°C
RL = 47 kΩ
d1 = 0±1.1 mm
Output transistor
Output allowable dissipation Pc (mW)
Output Allowable Dissipation vs.
Ambient Temperature Characteristics
−2
−1
0
1
2
3
Distance d (mm)
Distance d (mm)
EE-1005 Connector
1,000±20
(1) (2)
No.
(3)
Name
Model
Quantity
Maker
Wiring
1
Receptacle
housing
171822-3
1
Tyco Electronics
AMP
2
Receptacle
contact
170262-1
3
Tyco Electronics
AMP
1
Red
VCC
3
Lead wire
UL1007 AWG24
3
---
2
Orange
OUT
3
Yellow
GND
Connector
circuit no.
Lead wire color
Output when connected to
EE-SX461-P11
■ Recommended Mounting Hole Dimensions and Mounting and Dismounting Method
Dismounting by Hand
Squeeze the mounting tabs as shown in the following illustration and
press the mounting tabs upwards.
Optical axis
Sensor edge
(to post header)
Center of
sensing
slot
EE-SX461-P11
Sensor edge
(2)
The Photomicrosensor can be mounted to 0.8- to 1.6-mm-thick
panels.
Refer to the above mounting hole dimensions and open the
mounting holes in the panel to which the Photomicrosensor will be
mounted.
Insert into the holes the Photomicrosensor’s mounting portions with
a force of three to five kilograms but do not press in the
Photomicrosensor at one time. The Photomicrosensor can be easily
mounted by inserting the mounting portions halfway and then slowly
pressing the Photomicrosensor onto the panel.
There are two ways to dismount the Photomicrosensor. Refer to the
following.
Dismounting with Screwdriver
Press the mounting hooks of the Photomicrosensor with a flat-blade
screwdriver as shown in the following illustration and pull up the
Photomicrosensor.
Panel
(1)
(1)
Pressed mounting holes are ideal for mounting the
Photomicrosensor. When mounting the Photomicrosensor to a panel
that has pressed mounting holes for the Photomicrosensor, be sure
to mount the Photomicrosensor on the pressing side of the panel,
otherwise it may be difficult to mount the Photomicrosensor and an
insertion force of five to six kilograms may be required.
When mounting the Photomicrosensor to a panel that has mounting
holes opened by pressing, make sure that the mounting holes have
no burrs, otherwise the lock mechanism of the Photomicrosensor will
not work perfectly. After mounting the Photomicrosensor to a panel,
be sure to check if the lock mechanism is working perfectly.
EE-SX461-P11
EE-SX461-P11
Flat-blade
screwdriver
(2)
(2)
(1)
Mounting hook
Flat-blade
screwdriver
(1)
Panel
Mounting hook
This tapered portion must be on
the lower side of the panel,
otherwise the Photomicrosensor
will not be locked in.
Panel
Mounting tab
EE-SX461-P11 Photomicrosensor (Transmissive)
57
Photo IC Output Photomicrosensor (Transmissive)
EE-SX3148-P1
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• A boss on one side enables securing the Sensor with one M2 or M3
screw.
• Sensor can be installed from either top of bottom of mounting plate.
• High resolution both vertically and horizontally (slot dimensions: 0.5
x 0.5 mm)
• 3.6-mm-wide slot.
• Photo-IC output connects directly to CMOS and TTL devices.
• Applicable to the ZH and ZR Connector Series from JST (Japan
Solderless Terminal).
26±0.2
2.5
20.5±0.1
Four, R0.5
6.4±0.1
2.6
3.2±0.2 dia.
0
Two, 1.8 -0.1 dia.
7.7±0.2
11.3±0.2
■ Absolute Maximum Ratings (Ta = 25°C)
16.4±0.2
(13.8)
(3.6)
0.5±0.1
2.9±0.2
Optical axis
Two, C0.3
7.5±0.2
2.5
Item
0.5±0.1
1.5
Symbol
VCC
6 VDC
Output voltage
VOUT
28 V
Output current
IOUT
16 mA
Permissible output dissipation
POUT
250 mW
(see note)
Ambient
temperature
Operating
Topr
–20°C to 75°C
Storage
Tstg
–40°C to 85°C
Tsol
---
1.5
3.5
(2)
2.6
Japan Solderless
Terminal (JST)
B3B-ZR
16.4±0.2
Soldering temperature
Unless otherwise specified, the
tolerances are as shown below.
3
1
2
Dimensions
Note: Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
Tolerance
3 mm max.
±0.200
Name
3 < mm ≤ 6
±0.240
1
Power supply
(Vcc)
6 < mm ≤ 10
±0.290
2
3
Output (OUT)
Ground (GND)
10 < mm ≤ 18
±0.350
18 < mm ≤ 30
±0.420
Terminal No.
Recommended Mating Connectors:
JST (Japan Solderless Terminal) ZHR-3 Series (crimp connector)
03ZR Series (press-fit connector)
■ Electrical and Optical Characteristics (Ta = 25°C, VCC = 5 V ±10%)
Item
Symbol
Value
Condition
Current consumption
ICC
30 mA max.
With and without incident
Low-level output voltage
VOL
0.3 V max.
IOUT = 16 mA
without incident
High-level output voltage
VOH
(VCC x 0.9) V min.
VOUT = VCC with incident
RL = 47 kΩ
Response frequency
f
3 kHz min.
VOUT = VCC, RL = 47 kΩ (see note)
Note: The value of the response frequency is measured by
rotating the disk as shown below.
Disk
2.1 mm
0.5 mm
58
Rated value
Power supply voltage
0.5 mm
EE-SX3148-P1 Photo IC Output Photomicrosensor (Transmissive)
■ Engineering Data
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
300
VCC = 5 V
Ta = 25°C
RL = 47 kΩ
150
100
ON
(OFF)
(Center of axis)
50
OFF
(ON)
0
-40
-20
0
20
40
60
80
Ambient temperature Ta (°C)
100
ON
(OFF)
d1
Light interrupting plate
200
-3
-2
-1
0
VCC = 5 V
Ta = 25°C
RL = 47 kΩ
d2 = 0±0.3mm
Output transistor
d1 = 0±0.3 mm
250
Output transistor
Output allowable dissipation Pout (mW)
Output Allowable Dissipation vs.
Ambient Temperature Characteristics
d
1
Distance d (mm)
d2
(Center of axis)
d
OFF
(ON)
2
3
-3
-2
-1
0
1
2
3
Distance d (mm)
EE-SX3148-P1 Photo IC Output Photomicrosensor (Transmissive)
59
Photomicrosensor (Transmissive)
EE-SX3009-P1/-SX4009-P1
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
•
•
•
•
•
•
•
34
171825-3
(Tyco Electronics AMP)
23±0.2
■ Absolute Maximum Ratings (Ta = 25°C)
4.2±0.2 dia. hole
3±0.1 dia, depth: 2
Two, R1
0.5 (Aperture width)
Optical
axis
10.5
7.5
4
0
−0.1
dia.
Internal Circuit
O
O
G
Symbol
Rated value
VCC
10 V
Output voltage
VOUT
28 V
Output current
IOUT
16 mA
Permissible output dissipation
POUT
250 mW
(see note)
Ambient temper- Operating
ature
Storage
Topr
–25°C to 75°C
Tstg
–40°C to 85°C
Soldering temperature
Tsol
---
Unless otherwise specified, the
tolerances are as shown below.
G
V
Item
Power supply voltage
Note: Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
V
Terminal No.
Screw-mounting model.
High resolution with a 0.5-mm-wide sensing aperture.
With a 5-mm-wide groove.
Photo IC output signals directly connect with C-MOS and TTL.
Connects to Tyco Electronics AMP’s EI-series connectors.
Dark ON model (EE-SX3009-P1)
Light ON model (EE-SX4009-P1)
Name
Dimensions
Tolerance
Power supply
(Vcc)
4 mm max.
±0.2
Output (OUT)
Ground (GND)
4 < mm ≤ 16
±0.3
16 < mm ≤ 63
±0.5
Recommended Mating Connectors:
Tyco Electronics AMP 171822-3 (crimp connector)
172142-3 (crimp connector)
OMRON
EE-1005 (with harness)
■ Electrical and Optical Characteristics (Ta = 25°C, Vcc = 5 V ±10%)
Item
Symbol
Value
Condition
Current consumption
ICC
30 mA max.
With and without incident
Low-level output voltage
VOL
0.3 V max.
IOUT = 16 mA
Without incident (EE-SX3009-P1)
With incident (EE-SX4009-P1)
High-level output voltage
VOH
(VCC x 0.9) V min.
VOUT = VCC
With incident (EE-SX3009-P1)
Without incident (EE-SX4009-P1), RL = 47 kΩ
Response frequency
f
3 kHz min.
VOUT = VCC, RL = 47 kΩ (see note)
Note: The value of the response frequency is measured by
rotating the disk as shown below.
Disk
2.1 mm
0.5 mm
60
0.5 mm
t = 0.2 mm
EE-SX3009-P1/-SX4009-P1 Photomicrosensor (Transmissive)
■ Engineering Data
Note: The values in the parentheses apply to the EE-SX4009-P1.
Sensing Position Characteristics
(Typical)
Output allowable dissipation Pc (mW)
Output Allowable Dissipation vs.
Ambient Temperature Characteristics
VCC = 5 V, Ta = 25°C
RL = 47 kΩ
ON
(OFF)
Center of
optical axis
Light interrupting plate
Output transistor
d1 = 0±0.3 mm
OFF
(ON)
Ambient temperature Ta (°C)
Distance d (mm)
EE-1005 Connector
1,000±20
(1) (2)
No.
(3)
Name
Model
Quantity
Maker
1
Receptacle housing 171822-3
1
Tyco Electronics
AMP
2
Receptacle contact 170262-1
3
Tyco Electronics
AMP
3
Lead wire
UL1007 AWG24 3
Wiring
Connector
circuit no.
Lead wire
color
Output when connected
to EE-SX4009-P1/EE-SX3009-P1
1
Red
2
Orange
VCC
GND
3
Yellow
OUT
---
EE-SX3009-P1/-SX4009-P1 Photomicrosensor (Transmissive)
61
Photo IC Output Photomicrosensor (Transmissive)
EE-SX3157-P1/EE-SX4157E-P1
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
•
•
•
•
•
Through-beam Photomicrosensors with 5-mm slot.
High resolution (aperture width: 0.5 mm).
Light-ON operation with open-collector output. (EE-SX4157E-P1)
Dark-ON operation with open-collector output. (EE-SX3157-P1)
Screw mounting and connector connection (compatible with ZHR-3
from J.S.T. Mfg. Co., Ltd.).
• Connector lock mechanism.
16
■ Absolute Maximum Ratings (Ta = 25°C)
2
11
13
6
3
5.3
(3.9)
5
0.5
(Aperture width)
4.5
Optical axis
4
2.7
5.25
7.2 6
5 10.5
Two, 2.5 dia.
Item
Symbol
VCC
13.2 VDC
Output voltage
VOUT
13.2 V
Output current
IOUT
16 mA
Permissible output dissipation
POUT
250 mW
(see note)
Ambient
temperature
Operating
Topr
–20°C to 85°C
Storage
Tstg
–30°C to 85°C
Tsol
---
4.6
7.6
Japan Solderless
Terminal (JST)
B3B-ZR
Soldering temperature
Unless otherwise specified,
the tolerances are as shown
below.
1
2
Note: Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
3
Dimensions
Tolerance
3 mm max.
±0.200
Name
3 < mm ≤ 6
±0.240
1
Power supply
(Vcc)
6 < mm ≤ 10
±0.290
2
3
Output (OUT)
Ground (GND)
10 < mm ≤ 18
±0.350
18 < mm ≤ 30
±0.420
Terminal No.
Rated value
Power supply voltage
Recommended Mating Connectors:
JST (Japan Solderless Terminal) ZHR-3
■ Electrical and Optical Characteristics (Ta = 25°C, VCC = 12 V ±10%)
Item
Symbol
Value
Condition
Current consumption
ICC
25 mA max.
With and without incident
Low-level output voltage
VOL
0.3 V max.
IOUT = 16 mA
without incident (EE-SX3157-P1)
with incident (EE-SX4157E-P1)
High-level output voltage
VOH
(VCC x 0.9) V min.
VOUT = VCC RL = 47 kΩ
with incident (EE-SX3157-P1)
without incident (EE-SX4157E-P1)
Response frequency
f
3 kHz min.
VOUT = VCC, RL = 47 kΩ (see note)
Note: The value of the response frequency is measured by
rotating the disk as shown below.
Disk
2.1 mm
0.5 mm
62
0.5 mm
EE-SX3157-P1/EE-SX4157E-P1 Photo IC Output Photomicrosensor (Transmissive)
■ Engineering Data
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
300
VCC = 5 V
Ta = 25°C
RL = 47 kΩ
250
150
100
ON
(OFF)
(Center of axis)
50
OFF
(ON)
0
-40
-20
0
20
40
60
80
Ambient temperature Ta (°C)
100
ON
(OFF)
d1
Light interrupting plate
200
-3
-2
-1
0
VCC = 5 V
Ta = 25°C
RL = 47 kΩ
d2 = 0+0.6/-1.7 mm
Output transistor
d1 = 0±0.3 mm
Output transistor
Output allowable dissipation Pout (mW)
Output Allowable Dissipation vs.
Ambient Temperature Characteristics
d
1
Distance d (mm)
d2
(Center of axis)
−
0
+
d
OFF
(ON)
2
3
-3
-2
-1
0
1
2
3
Distance d (mm)
EE-SX3157-P1/EE-SX4157E-P1 Photo IC Output Photomicrosensor (Transmissive)
63
Photomicrosensor (Transmissive)
EE-SX1018
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Compact model with a 2-mm-wide slot.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
■ Absolute Maximum Ratings (Ta = 25°C)
Item
0.5±0.05
Four, C0.3
Emitter
Symbol
Forward current
Optical
axis
Detector
Four, 0.5
Four, 0.25
Pulse forward current IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
100 mW
(see note 1)
Collector dissipation PC
Cross section AA
Ambient temperature
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to
100°C
Tsol
260°C
(see note 3)
Internal Circuit
K
C
A
E
Dimensions
3 mm max.
±0.3
3 < mm ≤ 6
K
C
6 < mm ≤ 10
±0.375
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
E
Emitter
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
Terminal No.
Name
A
Anode
Cathode
Collector
Soldering temperature
Unless otherwise specified, the
tolerances are as shown below.
Rated value
50 mA
(see note 1)
IF
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
VF
1.2 V typ., 1.5 V max.
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength λP
850 nm typ.
VCE = 10 V
Forward voltage
IF = 30 mA
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
64
EE-SX1018 Photomicrosensor (Transmissive)
■ Engineering Data
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Light current IL (mA)
IF = 20 mA
VCE = 5 V
Forward current IF (mA)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
VCE = 10 V
0 lx
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
Response time tr, tf (μs)
VCC = 5 V
Ta = 25°C
Ta = 70°C
Forward voltage VF (V)
Collector−Emitter voltage VCE (V)
Response Time vs. Load Resistance Characteristics (Typical)
Ta = 25°C
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Relative light current IL (%)
Light current IL (mA)
IF = 50 mA
Ta = −30°C
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
Sensing Position Characteristics
(Typical)
120
80
Distance d (mm)
d
60
40
20
0
−2.0
Load resistance RL (kΩ)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
Ta = 25°C
Ta = 25°C
VCE = 10 V
Dark current ID (nA)
Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Relative light current IL (%)
PC
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1018 Photomicrosensor (Transmissive)
65
Photomicrosensor (Transmissive)
EE-SX1049
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Compact with a slot width of 2 mm.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
9
■ Absolute Maximum Ratings (Ta = 25°C)
Optical
axis
4
Item
Four, C0.3
Emitter
2
Two, 0.5
A
2 max.
Optical
0
axis 5.2 −0.2
2 max.
Optical
axis
Optical
axis
Detector
1.2
9 min.
Four, 0.25
Four, 0.5
2.5
0.7±0.1
C0.3
0
1.2 −0.05
dia.
C
A
Cross section AA
B
0.25 max.
2.5
A
Cross section BB
6±0.2
Internal Circuit
K
0.3 max.
K
C
Ambient temperature
Unless otherwise specified, the
tolerances are as shown below.
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to 100°C
Tsol
260°C
(see note 3)
Soldering temperature
A
Terminal No.
A
K
C
E
Dimensions
E
Name
Anode
Cathode
Collector
Emitter
Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
6 < mm ≤ 10
±0.375
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
IF
B
1.5
1.5
E
Symbol
Forward current
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
66
EE-SX1049 Photomicrosensor (Transmissive)
■ Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
50
20
10
−20
0
20
40
60
Ta = 70°C
30
20
0
0.2
IF = 30 mA
10
IF = 20 mA
6
IF = 10 mA
4
2
0
1
2
3
4
5
6
7
8
1
1.2
9
1.8
10
tf
100
tr
10
10
30
40
50
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
1,000
100
90
80
70
VCE = 10 V
0 lx
100
10
1
0.1
0.01
−20
0
20
40
60
80
0.001
−30 −20 −10 0
100
d
60
40
20
−0.5 −0.25
0
0.25
0.5
0.75
Distance d (mm)
1.0
Sensing Position Characteristics
(Typical)
120
(Center of optical axis)
80
10 20 30 40 50 60 70 80 90
Ambient temperature Ta (°C)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
0
20
Forward current IF (mA)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
1,000
Load resistance RL (kΩ)
0
10,000
120
VCC = 5 V
Ta = 25°C
1
2
Ambient temperature Ta (°C)
10,000
0.1
1.6
110
60
−40
10
Response Time vs. Load Resistance Characteristics (Typical)
1
0.01
1.4
IF = 20 mA
VCE = 10 V
Collector−Emitter voltage VCE (V)
Response time tr, tf (μs)
0.8
Dark current ID (nA)
Relative light current IL (%)
Light current IL (mA)
IF = 40 mA
14
8
0.6
120
IF = 50 mA
12
0.4
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
20
16
4
Forward voltage VF (V)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Ta = 25°C
6
0
0
Ambient temperature Ta (°C)
18
8
10
0
100
80
Ta = 25°C
40
Relative light current IL (%)
0
−40
Ta = −30°C
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
30
50
Light current IL (mA)
100
Ta = 25°C
VCE = 10 V
Forward current IF (mA)
PC
40
Collector dissipation PC (mW)
Forward current IF (mA)
IF
10
60
150
60
50
Light Current vs. Forward Current
Characteristics (Typical)
Forward Current vs. Forward
Voltage Characteristics (Typical)
80
d
60
40
20
0
−2.0
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
0
t
Output
90 %
10 %
0
t
tr
Input
tf
IL
VCC
Output
RL
EE-SX1049 Photomicrosensor (Transmissive)
67
Photomicrosensor (Transmissive)
EE-SX1103
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Ultra-compact with a sensor width of 5 mm and a slot width of
2 mm.
• PCB mounting type.
• High resolution with a 0.4-mm-wide aperture.
■ Absolute Maximum Ratings (Ta = 25°C)
Two, C0.5
Item
Gate
Emitter
Optical
axis
Two, C0.3
dia.
5 min.
Four, 0.5
Detector
Four, 0.2
Internal Circuit
Ambient temperature
Symbol
IF
50 mA
(see note 1)
Pulse forward current
IFP
---
Reverse voltage
VR
5V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
4.5 V
Collector current
IC
30 mA
Collector dissipation
PC
80 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to 100°C
Tsol
260°C
(see note 2)
Soldering temperature
Terminal No.
A
K
C
E
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. Complete soldering within 3 seconds.
Name
Anode
Cathode
Collector
Emitter
Rated value
Forward current
Unless otherwise specified, the
tolerances are ±0.2 mm.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
Condition
Forward voltage
VF
1.3 V typ., 1.6 V max.
Reverse current
IR
10 μA max.
VR = 5 V
Peak emission wavelength
λP
950 nm typ.
IF = 50 mA
Light current
IL
0.5 mA min.
IF = 20 mA, VCE = 5 V
Dark current
ID
500 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.4 V max.
IF = 20 mA, IL = 0.3 mA
Peak spectral sensitivity wavelength
λP
800 nm typ.
VCE = 5 V
Rising time
tr
10 μs typ.
VCC = 5 V, RL = 100 Ω,
IF = 20 mA
Falling time
tf
10 μs typ.
VCC = 5 V, RL = 100 Ω,
IF = 20 mA
Emitter
Detector
68
EE-SX1103 Photomicrosensor (Transmissive)
IF = 50 mA
■ Engineering Data
Forward Current vs. Forward
Voltage Characteristics (Typical)
Ambient temperature Ta (°C)
IF = 30 mA
IF = 20 mA
IF = 10 mA
Collector−Emitter voltage VCE (V)
Response time tr, tf (μs)
VCC = 5 V
Ta = 25°C
Light current It (mA)
Light current IL (mA)
Sensing Position Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
Ta = 25°C
Distance d (mm)
VCE = 30 V
VCE = 20 V
VCE = 10 V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Relative light current IL (%)
Response Time vs. Light Current
Characteristics (Typical)
IF = 20 mA
VCE = 5 V
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Dark current ID (nA)
IF = 40 mA
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
Light current IL (mA)
Ta = 25°C
IF = 50 mA
Forward current IF (mA)
Forward voltage VF (V)
Relative light current IL (%)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Ta = 25°C
VCE = 5 V
Forward current IF (mA)
Forward current IF (mA)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
IF = 20 mA
VCE = 5 V
Ta = 25°C
Distance d (mm)
Response Time Measurement Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1103 Photomicrosensor (Transmissive)
69
Photomicrosensor (Transmissive)
EE-SX1105
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Ultra-compact with a sensor width of 4.9 mm and a slot width of
2 mm.
• Low-height of 3.3 mm.
• PCB mounting type.
• High resolution with a 0.4-mm-wide aperture.
Two, C0.7
Gate
Item
Optical
axis
Four, 0.5
Four, 0.4
■ Absolute Maximum Ratings (Ta = 25°C)
50 mA
(see note 1)
Pulse forward
current
IFP
---
Reverse voltage
VR
5V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
4.5 V
Collector current
IC
30 mA
Collector
dissipation
PC
80 mW
(see note 1)
Ambient tem- Operating
perature
Storage
Topr
–25°C to 85°C
Tstg
–30°C to 85°C
Soldering temperature
Tsol
260°C
(see note 2)
Four,
Detector
Cross section AA
Internal Circuit
Terminal No. Name
A
Anode
K
Cathode
C
Collector
E
Emitter
Rated value
IF
Two, R0.15
Two, R0.3
5 min.
Symbol
Forward current
Emitter
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. Complete soldering within 3 seconds.
Unless otherwise specified,
the tolerances are ±0.2 mm.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
Condition
VF
1.3 V typ., 1.6 V max.
Reverse current
IR
10 μA max.
VR = 5 V
Peak emission wavelength
λP
950 nm typ.
IF = 50 mA
Light current
IL
0.2 mA min.
IF = 20 mA, VCE = 5 V
Dark current
ID
500 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
0.4 V max.
IF = 20 mA, IL = 0.1 mA
λP
800 nm typ.
VCE = 5 V
Rising time
tr
10 μs typ.
VCC = 5 V, RL = 100 Ω,
IF = 20 mA
Falling time
tf
10 μs typ.
VCC = 5 V, RL = 100 Ω,
IF = 20 mA
Emitter
Detector
Forward voltage
Collector–Emitter saturated volt- VCE (sat)
age
Peak spectral sensitivity wavelength
70
EE-SX1105 Photomicrosensor (Transmissive)
IF = 50 mA
■ Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
Forward Current vs. Forward
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Ta = 25°C
VCE = 5 V
Light current IL (mA)
Forward current IF (mA)
Forward current IF (mA)
Collector dissipation Pc (mW)
2.5
2
1.5
1
0.5
Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
IF = 10 mA
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
120
100
80
60
RL = 500 Ω
−20
0
20
40
60
80
100
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
Response time tr, tf (μs)
RL = 1K Ω
VCE = 10 V
20
Collector−Emitter voltage VCE (V)
Ta = 25°C
VCE = 5 V
VCE = 30 V
VCE = 20 V
40
0
−40
Response Time vs. Light Current
Characteristics (Typical)
IF = 20 mA
VCE = 5 V
140
Dark current ID (nA)
IF = 20 mA
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
Ta = 25°C
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
IF = 30 mA
Relative light current IL (%)
Light current IL (mA)
IF = 40 mA
Forward current IF (mA)
160
Ta = 25°C
IF = 50 mA
Forward voltage VF (V)
IF = 20 mA
VCE = 5 V
Ta = 25°C
RL = 100 Ω
Light current lt (mA)
Distance d (mm)
Distance d (mm)
Response Time Measurement Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1105 Photomicrosensor (Transmissive)
71
Photomicrosensor (Transmissive)
EE-SX493
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Incorporates an IC chip with a built-in detector element and amplifier.
• Incorporates a detector element with a built-in temperature compensation circuit.
• A wide supply voltage range: 4.5 to 16 VDC
• Directly connects with C-MOS and TTL.
• Allows highly precise sensing with a 0.2-mm-wide sensing aperture.
6
0.2
9.5
■ Absolute Maximum Ratings (Ta = 25°C)
6.5±0.05
Item
6.9±0.5
(1.25)
Pull-off
taper:
1/25
max.
Five, 0.25 Five, 0.5
(1.25)
Emitter
Detector
0.75±0.1
Cross section AA
Cross section BB
K
0
Two, 1 −0.2
dia. (Tip dimension)
7±0.1
Internal Circuit
O
G
Terminal No.
Ambient temperature
Unless otherwise specified, the
tolerances are as shown below.
Name
Dimensions
50 mA
(see note 1)
Reverse voltage
VR
4V
Power supply voltage
VCC
16 V
Output voltage
VOUT
28 V
Output current
IOUT
16 mA
Anode
3 mm max.
±0.125
K
Cathode
3 < mm ≤ 6
±0.150
V
Power supply
(Vcc)
6 < mm ≤ 10
±0.180
O
Output (OUT)
10 < mm ≤ 18
±0.215
G
Ground (GND)
18 < mm ≤ 30
±0.260
250 mW
(see note 1)
Operating
Topr
–40°C to 60°C
Storage
Tstg
–40°C to 85°C
Tsol
260°C
(see note 2)
Soldering temperature
Tolerance
A
Rated value
IF
Permissible output POUT
dissipation
V
A
Symbol
Forward current
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Forward voltage
VF
1.2 V typ., 1.5 V max.
Reverse current
IR
Condition
IF = 20 mA
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength λP
940 nm typ.
IF = 20 mA
Low-level output voltage
VOL
0.12 V typ., 0.4 V max.
VCC = 4.5 to 16 V, IOL = 16 mA, IF = 15 mA
High-level output voltage
VOH
15 V min.
VCC = 16 V, RL = 1 kΩ, IF = 0 mA
Current consumption
ICC
5 mA typ., 10 mA max.
VCC = 16 V
Peak spectral sensitivity
wavelength
λP
870 nm typ.
VCC = 4.5 to 16 V
IFT
10 mA typ., 15 mA max.
VCC = 4.5 to 16 V
LED current when output is OFF
LED current when output is ON
Hysteresis
ΔH
15% typ.
VCC = 4.5 to 16 V (see note 1)
Response frequency
f
3 kHz min.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2)
Response delay time
tPLH (tPHL)
3 μs typ.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Response delay time
tPHL (tPLH)
20 μs typ.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
72
EE-SX493 Photomicrosensor (Transmissive)
3. The following illustrations show the definition of response
delay time.
Note: 1. Hysteresis denotes the difference in forward LED
current value, expressed in percentage, calculated
from the respective forward LED currents when the
photo IC in turned from ON to OFF and when the
photo IC in turned from OFF to ON.
Input
2. The value of the response frequency is measured
by rotating the disk as shown below.
Output
2.1 mm
0.2 mm
0.2 mm
Disk
■ Engineering Data
VCC = 5 V
RL = 330 Ω
IFT OFF
Ta = 70°C
Supply voltage VCC (V)
Ta = 25°C
RL = 1 kΩ
IFT OFF
Low-level Output Voltage vs. Ambient Temperature Characteristics
(Typical)
Low-level Output Voltage vs.
Output Current (Typical)
Ta = 25°C
VCC = 5 V
IF = 15 mA
VCC = 5 V
IF = 15 mA
IOL = 16 mA
IOL = 5 mA
Ambient temperature Ta (°C)
Output current IC (mA)
Response Delay Time vs. Forward
Current (Typical)
Response delay time tPHL, tPLH (μs)
Current consumption Icc (mA)
Ta = 25°C
IF = 15 mA
IFT ON
Supply voltage VCC (V)
Forward voltage VF (V)
Ambient temperature Ta (°C)
Current Consumption vs. Supply
Voltage (Typical)
LED current IFT (mA)
Forward current IF (mA)
Ta = −30°C
Ta = 25°C
Low level output voltage VOL (V)
IFT ON
LED Current vs. Supply Voltage
(Typical)
Repeat Sensing Position
Characteristics (Typical)
40
VCC = 5 V
RL = 330 Ω
35
IF
Output transistor
LED current IFT (mA)
LED Current vs. Ambient Temperature Characteristics (Typical)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Low level output voltage VOL (V)
Ambient temperature Ta (°C)
Output allowable dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
t
30
VOUT
(EE-SX4@@)
tPHL
t
tPLH
25
20
tPHL (tPLH)
15
IF
ICC
VCC
RL
OUT
VOUT
10
Ta = 25°C
IF = 15 mA
VCC = 5 V
RL = 330 Ω
n = repeat 20 times
d1 = 0.01 mm
GND
5
tPLH (tPHL)
0
0
5
10
15
20
25
30
35
Forward current IF (mA)
40
Distance d (mm)
EE-SX493 Photomicrosensor (Transmissive)
73
Photomicrosensor (Transmissive)
EE-SX1055
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Longer leads allow the sensor to be mounted to a 1.6-mm thick
board.
• 5.4-mm-tall compact model.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
0.2 max.
0.2 max.
■ Absolute Maximum Ratings (Ta = 25°C)
Four, 5°
0.5±0.05
Item
White band
Emitter
Symbol
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to 100°C
Tsol
260°C
(see note 3)
Optical
axis
5.4±0.2
3.6±0.5
Detector
Four, 0.5 Four, 0.25
Cross section AA
Ambient temperature
Internal Circuit
Soldering temperature
K
C
A
Dimensions
E
Terminal No.
A
K
C
E
Unless otherwise specified, the
tolerances are as shown below.
Name
Anode
Cathode
Collector
Emitter
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
6 < mm ≤ 10
±0.375
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Detector
74
EE-SX1055 Photomicrosensor (Transmissive)
■ Engineering Data
Ambient temperature Ta (°C)
Ta = 25°C
Light current IL (mA)
IF = 50 mA
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Ta = 25°C
Ta = 70°C
Forward current IF (mA)
Forward voltage VF (V)
Collector−Emitter voltage VCE (V)
Response Time vs. Load Resistance Characteristics (Typical)
Ta = −30°C
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Relative light current IL (%)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Ta = 25°C
VCE = 10 V
Light current IL (mA)
PC
Light Current vs. Forward Current
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
VCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
Dark current ID (nA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
(Center of
optical axis)
80
Distance d (mm)
d
60
40
20
0
−2.0
Load resistance RL (kΩ)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Relative light current IL (%)
Response time tr, tf (μs)
Relative light current IL (%)
120
VCC = 5 V
Ta = 25°C
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1055 Photomicrosensor (Transmissive)
75
Photomicrosensor (Transmissive)
EE-SX1046
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• With a horizontal sensing aperture.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
■ Absolute Maximum Ratings (Ta = 25°C)
6.5
Optical axis
5
2.5
Item
Emitter
Symbol
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to
100°C
Tsol
260°C
(see note 3)
10±0.3
0.5±0.1
0.5±0.1
Optical
axis
Optical
axis
Detector
Four, 0.25
9 min. 0.3 max.
Four, 0.25
Cross section BB
0.25
max.
Cross section AA
Ambient temperature
Internal Circuit
K
C
A
E
Dimensions
3 mm max.
Terminal No.
Name
A
Anode
K
C
E
Cathode
Collector
Emitter
Soldering temperature
Unless otherwise specified, the
tolerances are as shown below.
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
920 nm typ.
IF = 20 mA
Light current
IL
1.2 mA min., 14 mA max.
IF = 20 mA, VCE = 5 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Detector
76
EE-SX1046 Photomicrosensor (Transmissive)
■ Engineering Data
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ambient temperature Ta (°C)
IF = 30 mA
IF = 20 mA
IF = 10 mA
VCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
Ambient temperature Ta (°C)
Collector−Emitter voltage VCE (V)
Response Time vs. Load Resistance Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Dark current ID (nA)
IF = 40 mA
Relative light current IL (%)
Light current IL (mA)
IF = 50 mA
Forward current IF (mA)
Forward voltage VF (V)
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Ta = 25°C
Light current IL (mA)
PC
Light Current vs. Forward Current
Characteristics (Typical)
Ta = 25°C
VCE = 10 V
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
120
80
d
60
40
20
−0.5
−0.25
0
0.25
Distance d (mm)
0.5
0.75
Relative light current IL (%)
100
0
−0.75
Load resistance RL (kΩ)
IF = 20 mA
VCE = 5 V
Ta = 25°C
(Center of optical axis)
Response time tr, tf (μs)
Relative light current IL (%)
120
VCC = 5 V
Ta = 25°C
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of
optical axis)
80
d
60
40
20
0
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1046 Photomicrosensor (Transmissive)
77
Photomicrosensor (Transmissive)
EE-SX1106
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Ultra-compact with a slot width of 3 mm.
• PCB mounting type.
• High resolution with a 0.4-mm-wide aperture.
■ Absolute Maximum Ratings (Ta = 25°C)
Item
Two, C0.7
Gate
Emitter
Optical
axis
5.4
Detector
5 min.
Two, R1
Four, 0.2
Two, C0.2
Four, 0.5
Internal Circuit
Ambient temperature
0
dia
1−0.1
Symbol
IF
50 mA
(see note 1)
Pulse forward current
IFP
---
Reverse voltage
VR
5V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
4.5 V
Collector current
IC
30 mA
Collector dissipation
PC
80 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to 85°C
Tsol
260°C
(see note 2)
Soldering temperature
0
1.4 −0.1 dia
Rated value
Forward current
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. Complete soldering within 3 seconds.
Terminal No.
Name
A
Anode
K
C
E
Cathode
Collector
Emitter
Unless otherwise specified,
the tolerances are ±0.2 mm.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
Condition
Forward voltage
VF
1.3 V typ., 1.6 V max.
Reverse current
IR
10 μA max.
VR = 5 V
Peak emission wavelength
λP
950 nm typ.
IF = 50 mA
Light current
IL
0.2 mA min.
IF = 20 mA, VCE = 5 V
Dark current
ID
500 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
800 nm typ.
VCE = 5 V
Rising time
tr
10 μs typ.
VCC = 5 V, RL = 100 Ω,
IF = 20 mA
Falling time
tf
10 μs typ.
VCC = 5 V, RL = 100 Ω,
IF = 20 mA
Emitter
Detector
78
EE-SX1106 Photomicrosensor (Transmissive)
IF = 50 mA
■ Engineering Data
Forward Current vs. Forward
Voltage Characteristics (Typical)
Ambient temperature Ta (°C)
IF = 15 mA
IF = 10 mA
IF = 5 mA
Collector−Emitter voltage VCE (V)
Response time tr, tf (μs)
VCE = 5 V
Ta = 25°C
RL = 1K Ω
RL = 500 Ω
RL = 100 Ω
Light current It (mA)
Light current IL (mA)
VCE = 10 V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
Response Time vs. Light Current
Characteristics (Typical)
VCE = 30 V
VCE =20 V
IF = 20 mA
VCE = 5 V
Ta = 25°C
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
IF = 20 mA
IF = 20 mA
VCE = 5 V
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Dark current ID (nA)
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Relative light current IL (%)
Light current IL (mA)
IF = 25 mA
Forward current IF (mA)
Forward voltage VF (V)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Ta = 25°C
Light Current vs. Forward Current
Characteristics (Typical)
Ta = 25°C
VCE = 5 V
Forward current IF (mA)
Forward current IF (mA)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
IF = 20 mA
VCE = 5 V
Ta = 25°C
Distance d (mm)
Response Time Measurement Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1106 Photomicrosensor (Transmissive)
79
Photomicrosensor (Transmissive)
EE-SX198
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• General-purpose model with a 3-mm-wide slot.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
12.2±0.3
■ Absolute Maximum Ratings (Ta = 25°C)
5±0.1
Item
Four, C0.3
0.5±0.1
Emitter
Optical
axis
10±0.2
8.5±0.1
Two, C1±0.3
6.5+0.1
Detector
6.2±0.5
Four, 0.5±0.1
Four, 0.25±0.1
2.5±0.1
Cross section BB
9.2±0.3
Cross section AA
Ambient temperature
Internal Circuit
K
Symbol
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to
100°C
Tsol
260°C
(see note 3)
C
Soldering temperature
A
E
Terminal No.
A
K
C
E
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Name
Anode
Cathode
Collector
Emitter
Rated value
Forward current
Unless otherwise specified,
the tolerances are ±0.2 mm.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.4 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 5 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 20 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 40 mA, IL = 0.5 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
80
EE-SX198 Photomicrosensor (Transmissive)
■ Engineering Data
IF = 20 mA
IF = 10 mA
Collector−Emitter voltage VCE (V)
Response time tr, tf (μs)
VCC = 5 V
Ta = 25°C
Load resistance RL (kΩ)
Response Time Measurement
Circuit
Light current IL (mA)
Forward current IF (mA)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
VCE = 10 V
0 lx
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
Response Time vs. Load Resistance Characteristics (Typical)
Ta = 70°C
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
Distance d (mm)
120
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
IF = 30 mA
Ta = 25°C
Dark current ID (nA)
IF = 40 mA
Ta = −30°C
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Relative light current IL (%)
Light current IL (mA)
IF = 50 mA
Ta = 25°C
VCE = 10 V
Forward voltage VF (V)
Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Ta = 25°C
Light Current vs. Forward Current
Characteristics (Typical)
Relative light current IL (%)
PC
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
80
d
60
40
20
0
−2.0
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Input
Output
90 %
10 %
Input
Output
EE-SX198 Photomicrosensor (Transmissive)
81
7Photomicrosensor (Transmissive)
EE-SX199
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
•
•
•
•
12.2±0.3
■ Absolute Maximum Ratings (Ta = 25°C)
5±0.1
Two, C1±0.3
Four, C0.3
0.5±0.1
General-purpose model with a 3-mm-wide slot.
PCB mounting type.
High resolution with a 0.5-mm-wide aperture.
With a positioning boss.
Item
Emitter
Optical axis
Symbol
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–40°C to
100°C
Tsol
260°C
(see note 3)
10±0.2
8.5±0.1
6.5±0.1
6.2±0.5
Four, 0.25±0.1
Four, 0.5±0.1
Cross section BB
Detector
2.5±0.1
9.2±0.3
0
Two, 0.7-0.1
dia.
Cross section AA
K
C
A
E
4.3
Internal Circuit
K
C
A
E
Ambient temperature
Soldering temperature
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Terminal No. Name
A
Anode
K
C
E
Cathode
Collector
Emitter
Rated value
Forward current
Unless otherwise specified,
the tolerances are ±0.2 mm.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.4 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 5 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 20 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 40 mA, IL = 0.5 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
82
EE-SX199 Photomicrosensor (Transmissive)
■ Engineering Data
Ta = 25°C
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Collector−Emitter voltage VCE (V)
Response Time vs. Load Resistance Characteristics (Typical)
Light current IL (mA)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Relative light current IL (%)
Light current IL (mA)
IF = 50 mA
Ta = 25°C
VCE = 5 V
Forward current IF (mA)
Forward voltage VF (V)
Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
VCE = 10 V
0 lx
Dark current ID (nA)
PC
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
(Center of
optical axis)
80
Distance d (mm)
d
60
40
20
0
−2.0
Load resistance RL (kΩ)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Relative light current IL (%)
Response time tr, tf (μs)
Relative light current IL (%)
120
VCC = 5 V
Ta = 25°C
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX199 Photomicrosensor (Transmissive)
83
Photomicrosensor (Transmissive)
EE-SX398/498
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Incorporates an IC chip with a built-in detector element and amplifier.
• Incorporates a detector element with a built-in temperature compensation circuit.
• A wide supply voltage range: 4.5 to 16 VDC
• Directly connects with C-MOS and TTL.
• High resolution with a 0.5-mm-wide sensing aperture.
• Dark ON model (EE-SX398)
• Light ON model (EE-SX498)
12.2±0.3
Four, C0.3
Two, C1±0.3
0.5±0.1
Optical
axis
■ Absolute Maximum Ratings (Ta = 25°C)
10±0.2
8.5±0.5
6.5±0.1
Item
Emitter
6.2±0.5
8.2±0.5
Five,
0.5±0.1
Five, 0.25±0.1 (2.5)
Detector
(9.2)
Cross section BB
Cross section AA
Internal Circuit
K
O
G
Terminal No.
Dimensions
Name
Anode
3 mm max.
±0.3
K
Cathode
3 < mm ≤ 6
±0.375
V
Power supply
(Vcc)
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Output (OUT)
Ground (GND)
Reverse voltage
VR
4V
Power supply voltage
VCC
16 V
Output voltage
VOUT
28 V
Output current
IOUT
16 mA
250 mW
(see note 1)
Operating
Topr
–40°C to 75°C
Storage
Tstg
–40°C to 85°C
Tsol
260°C
(see note 2)
Soldering temperature
Tolerance
A
O
G
Ambient temperature
Unless otherwise specified, the
tolerances are as shown below.
Rated value
50 mA
(see note 1)
Permissible output POUT
dissipation
V
A
Symbol
IF
Forward current
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 20 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Low-level output voltage
VOL
0.12 V typ., 0.4 V max.
VCC = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA (EE-SX398),
IF = 5 mA (EE-SX498)
High-level output voltage
VOH
15 V min.
VCC = 16 V, RL = 1 kΩ, IF = 5 mA (EE-SX398), IF = 0 mA
(EE-SX498)
Current consumption
ICC
3.2 mA typ., 10 mA max.
VCC = 16 V
870 nm typ.
VCC = 4.5 to 16 V
IFT
2 mA typ., 5 mA max.
VCC = 4.5 to 16 V
Hysteresis
ΔH
15% typ.
VCC = 4.5 to 16 V (see note 1)
Response frequency
f
3 kHz min.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2)
Response delay time
tPLH (tPHL)
3 μs typ.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Response delay time
tPHL (tPLH)
20 μs typ.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Emitter
Detector
Peak spectral sensitivi- λP
ty wavelength
LED current when output is OFF
LED current when output is ON
84
EE-SX398/498 Photomicrosensor (Transmissive)
3. The following illustrations show the definition of response
delay time. The value in the parentheses applies to the EESX498.
Note: 1. Hysteresis denotes the difference in forward LED
current value, expressed in percentage, calculated
from the respective forward LED currents when the
photo IC in turned from ON to OFF and when the
photo IC in turned from OFF to ON.
Input
2. The value of the response frequency is measured
by rotating the disk as shown below.
Output
2.1 mm
0.5 mm
Input
Output
EE-SX398
EE-SX498
Disk
0.5 mm
■ Engineering Data
Note: The values in the parentheses apply to the EE-SX498.
IFT OFF (IFT ON)
IFT ON (IFT OFF)
Supply voltage VCC (V)
LED current IFT (mA)
Forward current IF (mA)
Low-level Output Voltage vs.
Output Current (Typical)
Ta = 25°C
VCC = 5 V
IF = 0 mA (15 mA)
Response Delay Time vs. Forward
Current (Typical)
VCC = 5 V
RL = 330 Ω
Ta = 25°C
VOUT
(EE-SX3@@)
VOUT
(EE-SX4@@)
Forward current IF (mA)
IFT OFF (IFT ON)
IFT ON (IFT OFF)
Supply voltage VCC (V)
Low-level Output Voltage vs. Ambient Temperature Characteristics
(Typical)
Output current IC (mA)
Response delay time tPHL, tPLH (μs)
Current consumption Icc (mA)
Ta = 25°C
IF = 0 mA (15 mA)
Ta = 70°C
Forward voltage VF (V)
Ambient temperature Ta (°C)
Current Consumption vs. Supply
Voltage (Typical)
Ta = 25°C
Low level output voltage VOL (V)
LED current IFT (mA)
VCC = 5 V
RL = 330 Ω
Ta = −30°C
VCC = 5 V
IF = 0 mA (15 mA)
IOL = 16 mA
IOL = 5 mA
Ambient temperature Ta (°C)
Repeat Sensing Position
Characteristics (Typical)
Output transistor
LED Current vs. Ambient Temperature Characteristics (Typical)
LED Current vs. Supply Voltage
(Typical)
Ta = 25°C
RL = 1 kΩ
Low level output voltage VOL (V)
Ambient temperature Ta (°C)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Output allowable dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
Ta = 25°C
IF = 15 mA
VCC = 5 V
RL = 330 Ω
n = repeat 20 times
d1 = 0.01 mm
Center of optical axis
Distance d (mm)
EE-SX398/498 Photomicrosensor (Transmissive)
85
Photomicrosensor (Transmissive)
EE-SX301/-SX401
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Incorporates an IC chip with a built-in detector element and amplifier.
• Incorporates a detector element with a built-in temperature compensation circuit.
• A wide supply voltage range: 4.5 to 16 VDC
• Directly connects with C-MOS and TTL.
• High resolution with a 0.5-mm-wide sensing aperture.
• Dark ON model (EE-SX301)
• Light ON model (EE-SX401)
Optical axis
Center mark
3.4±0.2
Optical
axis
Optical
axis
■ Absolute Maximum Ratings (Ta = 25°C)
Item
Emitter
Symbol
IF
50 mA
(see note 1)
Reverse voltage
VR
4V
Power supply voltage
VCC
16 V
Output voltage
VOUT
28 V
Output current
IOUT
16 mA
Permissible output
dissipation
POUT
250 mW
(see note 1)
Operating
Topr
–40°C to 75°C
Storage
Tstg
–40°C to 85°C
Tsol
260°C
(see note 2)
Five, 0.5
2.5±0.2
Five, 0.25
Cross section AA
Detector
Cross section BB
Internal Circuit
K
V
O
A
G
Terminal No.
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Name
Ambient temperature
Tolerance
A
K
Anode
Cathode
3 mm max.
±0.3
3 < mm ≤ 6
V
Power supply
(Vcc)
6 < mm ≤ 10
±0.375
±0.45
O
G
Output (OUT)
Ground (GND)
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
Forward current
Soldering temperature
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
Condition
VF
1.2 V typ., 1.5 V max.
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Low-level output voltage VOL
0.12 V typ., 0.4 V max.
Vcc = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA (EE-SX301),
IF = 8 mA (EE-SX401)
High-level output voltage
VOH
15 V min.
Vcc = 16 V, RL = 1 kΩ, IF = 8 mA (EE-SX301), IF = 0 mA
(EE-SX401)
Current consumption
ICC
3.2 mA typ., 10 mA max.
VCC = 16 V
870 nm typ.
VCC = 4.5 to 16 V
IFT
3 mA typ., 8 mA max.
VCC = 4.5 to 16 V
Hysteresis
ΔH
15% typ.
VCC = 4.5 to 16 V (see note 1)
Response frequency
f
3 kHz min.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2)
Response delay time
tPLH (tPHL)
3 μs typ.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Response delay time
tPHL (tPLH)
20 μs typ.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Emitter
Detector
Forward voltage
Peak spectral sensitivity λP
wavelength
LED current when output is OFF
IF = 20 mA
LED current when output is ON
86
EE-SX301/-SX401 Photomicrosensor (Transmissive)
Note: 1. Hysteresis denotes the difference in forward LED
current value, expressed in percentage, calculated
from the respective forward LED currents when the
photo IC in turned from ON to OFF and when the
photo IC in turned from OFF to ON.
2. The value of the response frequency is measured
by rotating the disk as shown below.
3. The following illustrations show the definition of response
delay time. The value in the parentheses applies to the EESX401.
Input
Output
EE-SX301
2.1 mm
0.5 mm
Input
Output
EE-SX401
Disk
0.5 mm
■ Engineering Data
Note: The values in the parentheses apply to the EE-SX401.
IFT OFF (IFT ON)
IFT ON (IFT OFF)
Low-level Output Voltage vs.
Output Current (Typical)
Supply voltage VCC (V)
Ta = 25°C
VCE = 5 V
IF = 0 mA (15 mA)
Response Delay Time vs. Forward
Current (Typical)
VCC = 5 V
RL = 330 Ω
Ta = 25°C
VOUT
(EE-SX3@@)
VOUT
(EE-SX4@@)
Forward current IF (mA)
Ta = 25°C
RL = 1 kΩ
IFT OFF (IFT ON)
IFT ON (IFT OFF)
Supply voltage VCC (V)
Low-level Output Voltage vs. Ambient Temperature Characteristics
(Typical)
VCC = 5 V
IF = 0 mA (15 mA)
IOL = 16 mA
IOL = 5 mA
Ambient temperature Ta (°C)
Output current IC (mA)
Response delay time tPHL, tPLH (μs)
Current consumption Icc (mA)
Ta = 25°C
IF = 0 mA (15 mA)
LED current IFT (mA)
Forward current IF (mA)
Forward voltage VF (V)
Ambient temperature Ta (°C)
Current Consumption vs. Supply
Voltage (Typical)
Ta = 70°C
Low level output voltage VOL (V)
LED current IFT (mA)
VCC = 5 V
RL = 330 Ω
Ta = 25°C
Repeat Sensing Position
Characteristics (Typical)
Output transistor
LED Current vs. Ambient Temperature Characteristics (Typical)
LED Current vs. Supply Voltage
(Typical)
Ta = −30°C
Low level output voltage VOL (V)
Ambient temperature Ta (°C)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Output allowable dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
Ta = 25°C
IF = 15 mA
VCC = 5 V
RL = 330 Ω
n = repeat 20 times
d1 = 0.01 mm
Center of optical axis
Distance d (mm)
EE-SX301/-SX401 Photomicrosensor (Transmissive)
87
Photomicrosensor (Transmissive)
EE-SX1071
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• General-purpose model with a 3.4-mm-wide slot.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
■ Absolute Maximum Ratings (Ta = 25°C)
6.2
Item
Emitter
Four, C0.3
2.1
Optical
axis
10.2
7.2
Detector
Four, 0.25 Cross section BB
(2.54)
Cross section AA
Ambient temperature
Internal Circuit
K
C
A
E
Terminal No.
Name
A
Anode
K
C
E
Cathode
Collector
Emitter
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to
100°C
Tsol
260°C
(see note 3)
Soldering temperature
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
6 < mm ≤ 10
±0.375
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
IF
0.5
0.2
Four, 0.5
Symbol
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
88
EE-SX1071 Photomicrosensor (Transmissive)
■ Engineering Data
Ambient temperature Ta (°C)
Light current IL (mA)
Ta = 25°C
IF = 50 mA
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Ta = 25°C
Ta = 70°C
Forward current IF (mA)
Forward voltage VF (V)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
VCE = 10 V
0 lx
Ambient temperature Ta (°C)
Collector−Emitter voltage VCE (V)
Response Time vs. Load Resistance Characteristics (Typical)
Ta = −30°C
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Relative light current IL (%)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Ta = 25°C
VCE = 10 V
Light current IL (mA)
PC
Light Current vs. Forward Current
Characteristics (Typical)
Dark current ID (nA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
(Center of
optical axis)
Distance d (mm)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Relative light current IL (%)
Response time tr, tf (μs)
Load resistance RL (kΩ)
Relative light current IL (%)
120
VCC = 5 V
Ta = 25°C
80
d
60
40
20
0
−2.0
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1071 Photomicrosensor (Transmissive)
89
Photomicrosensor (Transmissive)
EE-SX384/-SX484
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Incorporates an IC chip with a built-in detector element and amplifier.
• Incorporates a detector element with a built-in temperature compensation circuit.
• A wide supply voltage range: 4.5 to 16 VDC
• Directly connects with C-MOS and TTL.
• High resolution with a 0.5-mm-wide sensing aperture.
• Dark ON model (EE-SX384)
• Light ON model (EE-SX484)
0.5
0.5
5.5
5.5
8
■ Absolute Maximum Ratings (Ta = 25°C)
Item
7 min.
Five, 0.5
Emitter
Five, 0.25
Cross section AA
Cross section BB
Detector
Internal Circuit
K
Reverse voltage
VR
4V
Power supply voltage
VCC
16 V
Output voltage
VOUT
28 V
Output current
IOUT
16 mA
Permissible output POUT
dissipation
V
0
A
Ambient temperature
G
Operating
Topr
–40°C to 75°C
Tstg
–40°C to 85°C
Tsol
260°C
(see note 2)
Name
A
K
Anode
Cathode
V
Power supply
(Vcc)
O
G
Output (OUT)
Ground (GND)
250 mW
(see note 1)
Storage
Soldering temperature
Terminal No.
Rated value
50 mA
(see note 1)
2.5
1.25
1.25
Symbol
IF
Forward current
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. Complete soldering within 10 seconds.
Unless otherwise specified,
the tolerances are ±0.2 mm.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 20 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Low-level output voltage
VOL
0.12 V typ., 0.4 V max.
VCC = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA (EE-SX384),
IF = 8 mA (EE-SX484)
High-level output voltage
VOH
15 V min.
VCC = 16 V, RL = 1 kΩ, IF = 8 mA (EE-SX384), IF = 0 mA
(EE-SX484)
Current consumption
ICC
3.2 mA typ., 10 mA max.
VCC = 16 V
870 nm typ.
VCC = 4.5 to 16 V
IFT
3 mA typ., 8 mA max.
VCC = 4.5 to 16 V
Hysteresis
ΔH
15% typ.
VCC = 4.5 to 16 V (see note 1)
Response frequency
f
3 kHz min.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2)
Response delay time
tPLH (tPHL)
3 μs typ.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Response delay time
tPHL (tPLH)
20 μs typ.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Emitter
Detector
Peak spectral sensitivi- λP
ty wavelength
LED current when output is OFF
LED current when output is ON
90
EE-SX384/-SX484 Photomicrosensor (Transmissive)
3. The following illustrations show the definition of response
delay time. The value in the parentheses applies to the EESX484.
Note: 1. Hysteresis denotes the difference in forward LED
current value, expressed in percentage, calculated
from the respective forward LED currents when the
photo IC in turned from ON to OFF and when the
photo IC in turned from OFF to ON.
Input
2. The value of the response frequency is measured
by rotating the disk as shown below.
Output
2.1 mm
0.5 mm
Input
Output
EE-SX384
EE-SX484
Disk
0.5 mm
■ Engineering Data
Note: The values in the parentheses apply to the EE-SX484.
IFT OFF (IFT ON)
IFT ON (IFT OFF)
Supply voltage VCC (V)
LED current IFT (mA)
Forward current IF (mA)
Low-level Output Voltage vs.
Output Current (Typical)
Ta = 25°C
VCC = 5 V
IF = 0 mA (15 mA)
Response Delay Time vs. Forward
Current (Typical)
VCC = 5 V
RL = 330 Ω
Ta = 25°C
VOUT
(EE-SX3@@)
VOUT
(EE-SX4@@)
Forward current IF (mA)
Ta = 25°C
RL = 1 kΩ
IFT OFF (IFT ON)
IFT ON (IFT OFF)
Supply voltage VCC (V)
Low-level Output Voltage vs. Ambient Temperature Characteristics
(Typical)
VCC = 5 V
IF = 0 mA (15 mA)
IOL = 16 mA
IOL = 5 mA
Ambient temperature Ta (°C)
Output current IC (mA)
Response delay time tPHL, tPLH (μs)
Current consumption Icc (mA)
Ta = 25°C
IF = 0 mA (15 mA)
Ta = 70°C
Forward voltage VF (V)
Ambient temperature Ta (°C)
Current Consumption vs. Supply
Voltage (Typical)
Ta = −30°C
Ta = 25°C
Low level output voltage VOL (V)
LED current IFT (mA)
VCC = 5 V
RL = 330 Ω
LED Current vs. Supply Voltage
(Typical)
Repeat Sensing Position
Characteristics (Typical)
Output transistor
LED Current vs. Ambient Temperature Characteristics (Typical)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Low level output voltage VOL (V)
Ambient temperature Ta (°C)
Output allowable dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
Ta = 25°C
IF = 15 mA
VCC = 5 V
RL = 330 Ω
n = repeat 20 times
d1 = 0.01 mm
Center of optical axis
Distance d (mm)
EE-SX384/-SX484 Photomicrosensor (Transmissive)
91
Photomicrosensor (Transmissive)
EE-SJ3 Series
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• High-resolution model with a 0.2-mm-wide sensing aperture, highsensitivity model with a 1-mm-wide sensing aperture, and model
with a horizontal sensing aperture are available.
0.3
Center mark
■ Absolute Maximum Ratings (Ta = 25°C)
6.2
Item
Emitter
Symbol
50 mA
(see note 1)
Pulse forward
current
1A
(see note 2)
0.2
10.2
7.2±0.2
Detector
6
Four, 0.5
Four, 0.25
7.6±0.3
2.54±0.2
Cross section BB
Cross section AA
Model
Internal Circuit
K
C
Aperture (a x b)
E
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
IFP
Reverse voltage VR
4V
Collector–Emit- VCEO
ter voltage
30 V
Emitter–Collec- VECO
tor voltage
---
Collector current
20 mA
IC
Collector dissi- PC
pation
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to 100°C
Tsol
260°C
(see note 3)
EE-SJ3-C
EE-SJ3-D
2.1 x 1.0
2.1 x 0.2
Soldering temperature
EE-SJ3-G
0.5 x 2.1
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Unless otherwise specified, the
tolerances are as shown below.
A
Ambient temperature
Rated value
Forward current IF
Dimensions
Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
EE-SJ3-C
Emitter
Detector
Condition
EE-SJ3-G
Forward voltage
VF
1.2 V typ., 1.5 V max.
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
0.1 mA min.
IF = 30 mA
Light current
IL
1 to 28 mA typ.
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ.,
0.4 V max.
Peak spectral sensitivity λP
wavelength
---
0.5 to 14 mA
0.1 V typ.,
0.4 V max.
IF = 20 mA, VCE = 10 V
IF = 20 mA,
IL = 0.1 mA
850 nm typ.
VCE = 10 V
VCC = 5 V,
RL = 100 Ω,
IL = 5 mA
Rising time
tr
4 μs typ.
Falling time
tf
4 μs typ.
92
EE-SJ3-D
EE-SJ3 Series Photomicrosensor (Transmissive)
■ Engineering Data
Ta = 70°C
Light current IL (mA)
Ta = 25°C
IF = 50 mA
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Collector−Emitter voltage VCE (V)
VCC = 5 V
Ta = 25°C
Sensing Position Characteristics
(EE-SJ3-D)
Load resistance RL (kΩ)
Relative light current IL (%)
Sensing Position Characteristics
(EE-SJ3-C)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Center of optical axis
VCE = 10 V
0 lx
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Relative light current IL (%)
Response time tr, tf (μs)
Response Time vs. Load Resistance Characteristics (Typical)
IF = 20 mA
VCE = 5 V
Relative light current IL (%)
Light Current vs. Collector−Emitter
Voltage Characteristics (EE-SJ3-G)
Forward current IF (mA)
Forward voltage VF (V)
Ambient temperature Ta (°C)
Ta = 25°C
VCE = 10 V
Light current IL (mA)
Ta = −30°C
Ta = 25°C
Dark current ID (nA)
PC
Light Current vs. Forward Current
Characteristics (Typical)
Sensing Position Characteristics
(EE-SJ3-G)
Relative light current IL (%)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
IF = 20 mA
VCE = 10 V
Ta = 25°C
−
d
0
+
Center of optical axis
Distance d (mm)
Distance d (mm)
Response Time Measurement
Circuit
Input
Center of optical axis
Output
90 %
10 %
Input
Output
Distance d (mm)
EE-SJ3 Series Photomicrosensor (Transmissive)
93
Photomicrosensor (Transmissive)
EE-SX1057
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Compact model with a 3.6-mm-wide slot.
• PCB mounting type.
■ Absolute Maximum Ratings (Ta = 25°C)
Item
Emitter
Detector
Ambient temperature
K
C
A
E
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Tolerance
±0.2
±0.24
3 mm max.
Name
A
K
C
Anode
Cathode
Collector
E
Emitter
3 < mm ≤ 6
6 < mm ≤ 10
±0.29
10 < mm ≤ 18
±0.35
18 < mm ≤ 30
±0.42
Rated value
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
5V
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to 100°C
Tsol
260°C
(see note 3)
Soldering temperature
Internal Circuit
Terminal No.
Symbol
Forward current
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Forward voltage
Symbol
Value
VF
1.15 V typ., 1.5 V max.
Condition
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
1.5 mA min., 8 mA typ., 30 mA max.
IF = 15 mA, VCE = 2 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated
voltage
VCE (sat)
0.4 V max.
IF = 30 mA, IL = 1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ., 20 μA max.
VCC = 10 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ., 20 μA max.
VCC = 10 V, RL = 100 Ω, IL = 5 mA
Detector
94
EE-SX1057 Photomicrosensor (Transmissive)
■ Engineering Data
Ambient temperature Ta (°C)
Light current IL (mA)
Ta = 25°C
IF = 50 mA
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Light current IL (mA)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Collector−Emitter voltage VCE (V)
Response Time vs. Load Resistance Characteristics (Typical)
Ta = 25°C
VCE = 10 V
Forward current IF (mA)
Forward voltage VF (V)
Relative light current IL (%)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
VCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
Dark current ID (nA)
PC
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
(Center of
optical axis)
80
Distance d (mm)
d
60
40
20
0
−2.0
Load resistance RL (kΩ)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Relative light current IL (%)
Response time tr, tf (μs)
Relative light current IL (%)
120
VCC = 5 V
Ta = 25°C
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1057 Photomicrosensor (Transmissive)
95
Photomicrosensor (Transmissive)
EE-SX1128
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
•
•
•
•
General-purpose model with a 4.2-mm-wide slot.
PCB mounting type.
High resolution with a 0.5-mm-wide aperture.
Horizontal sensing aperture.
■ Absolute Maximum Ratings (Ta = 25°C)
Item
Emitter
Detector
Ambient temperature
Internal Circuit
K
C
Terminal No.
A
K
C
E
Dimensions
E
Name
Anode
Cathode
Collector
Emitter
±0.100
4 < × ≤ 18
±0.200
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to
100°C
Tsol
260°C
(see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
0<×≤4
Rated value
IF
Soldering temperature
Unless otherwise specified, the
tolerances are as shown below.
A
Symbol
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 10 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
96
EE-SX1128 Photomicrosensor (Transmissive)
■ Engineering Data
Forward Current vs. Forward
Voltage Characteristics (Typical)
Ta = 25°C
Ta = 70°C
IF = 50 mA
14
IF = 40 mA
12
10
IF = 30 mA
8
IF = 20 mA
6
4
IF = 10 mA
14
12
10
8
6
Forward current IF (mA)
Forward voltage VF (V)
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
VCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
Dark current ID (nA)
Light current IL (mA)
16
16
2
Relative light current IL (%)
Ta = 25°C
Light current IL (mA)
Ta = −30°C
4
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
18
Ta = 25°C
VCE = 10 V
18
Ambient temperature Ta (°C)
20
Light Current vs. Forward Current
Characteristics (Typical)
20
Forward current IF (mA)
Forward current IF (mA)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
2
Ambient temperature Ta (°C)
Response Time vs. Load Resistance Characteristics (Typical)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
120
d
80
60
40
20
−0.5 −0.25
0
0.25
0.5
0.75
Distance d (mm)
1.0
Relative light current IL (%)
100
0
Load resistance RL (kΩ)
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
Response time tr, tf (μs)
Relative light current IL (%)
120
VCC = 5 V
Ta = 25°C
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
Collector−Emitter voltage VCE (V)
80
d
60
40
20
0
−2.0
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1128 Photomicrosensor (Transmissive)
97
Photomicrosensor (Transmissive)
EE-SJ5-B
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• General-purpose model with a 5-mm-wide slot.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
15.4
■ Absolute Maximum Ratings (Ta = 25°C)
2.1 × 0.5 Aperture holes (see note)
5±0.2
Item
Emitter
Optical axis
7.2±0.2
Detector
Four, 0.25
9.2±0.3
Four, 0.5
2.54±0.2
Cross section AA
Note: There is no difference in size
between the slot on the emitter
and that on the detector.
Internal Circuit
K
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
E
Terminal No.
Name
A
K
C
Anode
Cathode
Collector
E
Emitter
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to 100°C
Tsol
260°C
(see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
3 mm max.
Rated value
IF
Soldering temperature
C
A
Ambient temperature
Symbol
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
98
EE-SJ5-B Photomicrosensor (Transmissive)
■ Engineering Data
IF = 30 mA
IF = 20 mA
IF = 10 mA
Relative light current IL (%)
Light current IL (mA)
IF = 40 mA
Collector−Emitter voltage VCE (V)
Response Time vs. Load Resistance Characteristics (Typical)
Ta = 25°C
Ta = 70°C
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
IF = 50 mA
Ta = −30°C
Forward current IF (mA)
Forward voltage VF (V)
Ambient temperature Ta (°C)
Ta = 25°C
Ta = 25°C
VCE = 10 V
Light current IL (mA)
PC
Light Current vs. Forward Current
Characteristics (Typical)
IF = 20 mA
VCE = 5 V
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
VCE = 10 V
0 lx
Dark current ID (nA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
80
Distance d (mm)
d
60
40
20
0
−2.0
Load resistance RL (kΩ)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
Relative light current IL (%)
Response time tr, tf (μs)
Relative light current IL (%)
120
VCC = 5 V
Ta = 25°C
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SJ5-B Photomicrosensor (Transmissive)
99
Photomicrosensor (Transmissive)
EE-SX1041
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• General-purpose model with a 5-mm-wide slot.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
0.2 max.
14±0.2
5 +0.2
−0.1
0.2 max.
■ Absolute Maximum Ratings (Ta = 25°C)
6±0.2
0.5±0.1
0.2
Emitter
2.2
Optical
axis
10
0
−0.2
7.5±0.2
2.5
5 min.
Detector
Two, 0.7± 0.1
Four, 0.25
(9)
Four, 0.5
5.2±0.1
K
C
(Two, 2.54)
A
2.35±0.1
Two, 0.7±0.1 dia.
E
6.6±0.1
Internal Circuit
Symbol
Forward current
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 95°C
Storage
Tstg
–30°C to
100°C
Tsol
260°C
(see note 3)
Soldering temperature
K
C
Unless otherwise specified, the
tolerances are as shown below.
A
E
Terminal No.
A
K
C
E
Ambient temperature
Item
Name
Anode
Cathode
Collector
Emitter
Dimensions
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Detector
100
EE-SX1041 Photomicrosensor (Transmissive)
■ Engineering Data
IF = 30 mA
IF = 20 mA
IF = 10 mA
Relative light current IL (%)
Light current IL (mA)
IF = 40 mA
Light current IL (mA)
Ta = 25°C
Ta = 70°C
Forward current IF (mA)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
VCE = 10 V
0 lx
Ambient temperature Ta (°C)
Collector−Emitter voltage VCE (V)
Response Time vs. Load Resistance Characteristics (Typical)
Ta = −30°C
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Ta = 25°C
IF = 50 mA
Ta = 25°C
VCE = 10 V
Forward voltage VF (V)
Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Dark current ID (nA)
PC
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
80
Distance d (mm)
d
60
40
20
0
−2.0
Load resistance RL (kΩ)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
Relative light current IL (%)
Response time tr, tf (μs)
Relative light current IL (%)
120
VCC = 5 V
Ta = 25°C
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1041 Photomicrosensor (Transmissive)
101
Photomicrosensor (Transmissive)
EE-SX1042
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• 14.5-mm-tall model with a deep slot.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
Four, C0.3
■ Absolute Maximum Ratings (Ta = 25°C)
Item
0.5±0.05
Emitter
14.5
12±0.4
Detector
5 min.
Four, 0.25
(11.2)
(1.92)
Cross section AA
Ambient temperature
K
C
A
E
Name
Anode
Cathode
Collector
Emitter
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to 100°C
Tsol
260°C
(see note 3)
Soldering temperature
Internal Circuit
Terminal No.
A
K
C
E
Symbol
Forward current
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 10 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Detector
102
EE-SX1042 Photomicrosensor (Transmissive)
■ Engineering Data
Ambient temperature Ta (°C)
IF = 10 mA
Collector−Emitter voltage VCE (V)
Response time tr, tf (μs)
VCC = 5 V
Ta = 25°C
Light current IL (mA)
Forward current IF (mA)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
VCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
120
Relative light current IL (%)
Response Time vs. Load Resistance Characteristics (Typical)
Ta = 70°C
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
80
Distance d (mm)
d
60
40
20
0
−2.0
Load resistance RL (kΩ)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
IF = 20 mA
Ta = 25°C
Dark current ID (nA)
Relative light current IL (%)
Light current IL (mA)
IF = 30 mA
Ta = −30°C
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Ta = 25°C
IF = 40 mA
Ta = 25°C
VCE = 10 V
Forward voltage VF (V)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
IF = 50 mA
Light Current vs. Forward Current
Characteristics (Typical)
Relative light current IL (%)
PC
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1042 Photomicrosensor (Transmissive)
103
Photomicrosensor (Transmissive)
EE-SX1081
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• General-purpose model with a 5-mm-wide slot.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
■ Absolute Maximum Ratings (Ta = 25°C)
Four, C0.3
13.7±0.3
Item
5+0.1
0.5±0.1
Emitter
Two, C1±0.3
(Optical axis)
7.5±0.2
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to 100°C
Tsol
260°C
(see note 3)
6.5±0.1
Detector
6.2±0.5
Four,
0.5±0.1
Four, 0.25±0.1
(10.5)
Cross section BB
Cross section AA
Ambient temperature
Internal Circuit
K
Soldering temperature
C
Unless otherwise specified, the
tolerances are as shown below.
A
Dimensions
E
Terminal No.
A
Name
Anode
K
C
E
Cathode
Collector
Emitter
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
IF
2.5±0.2
10±0.2
8.5±0.1
Symbol
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
104
EE-SX1081 Photomicrosensor (Transmissive)
■ Engineering Data
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Collector−Emitter voltage VCE (V)
Response Time vs. Load Resistance Characteristics (Typical)
Light current IL (mA)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Relative light current IL (%)
Light current IL (mA)
IF = 50 mA
Ta = 25°C
VCE = 10 V
Forward current IF (mA)
Forward voltage VF (V)
Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Ta = 25°C
Light Current vs. Forward Current
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
VCE = 10 V
0 lx
Dark current ID (nA)
PC
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
(Center of
optical axis)
80
Distance d (mm)
d
60
40
20
0
−2.0
Load resistance RL (kΩ)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Relative light current IL (%)
Response time tr, tf (μs)
Relative light current IL (%)
120
VCC = 5 V
Ta = 25°C
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1081 Photomicrosensor (Transmissive)
105
Photomicrosensor (Transmissive)
EE-SX1115
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• 14.5-mm-tall model with a deep slot.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
Four, C0.3
1.03
Four, R0.1
■ Absolute Maximum Ratings (Ta = 25°C)
5
1.35 +0.06
−0.01
1.35 +0.06
−0.01
Item
14
0.2
Part B
5
Emitter
0.5±0.05
Symbol
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to
100°C
Tsol
260°C
(see note 3)
A
Four, R0.1
Optical axis
1.03
1.35 +0.06
−0.01
14.5
12±0.4
1.35
+0.06
−0.01
Detector
Part C
2.5
2-2
5 min.
A
Four, 0.25
Four, 0.5
(11.2)
K
(1.94)
C
Cross section AA
1.75±0.1
A
E
B
(2.1)
Internal Circuit
K
C
A
Name
A
K
C
Anode
Cathode
Collector
E
Emitter
4.2±0.1
C
Soldering temperature
Unless otherwise specified, the
tolerances are as shown below.
E
Terminal No.
Ambient temperature
Dimensions
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
106
EE-SX1115 Photomicrosensor (Transmissive)
■ Engineering Data
Ambient temperature Ta (°C)
IF = 50 mA
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Light current IL (mA)
Forward current IF (mA)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
VCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
120
Relative light current IL (%)
Response time tr, tf (μs)
VCC = 5 V
Ta = 25°C
Ta = 70°C
Forward voltage VF (V)
Collector−Emitter voltage VCE (V)
Response Time vs. Load Resistance Characteristics (Typical)
Ta = 25°C
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
80
Distance d (mm)
d
60
40
20
0
−2.0
Load resistance RL (kΩ)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
Light current IL (mA)
Ta = 25°C
Ta = −30°C
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Relative light current IL (%)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Ta = 25°C
VCE = 10 V
Dark current ID (nA)
PC
Light Current vs. Forward Current
Characteristics (Typical)
Relative light current IL (%)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1115 Photomicrosensor (Transmissive)
107
Photomicrosensor (Transmissive)
EE-SX1137
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• General-purpose model with a 5-mm-wide slot.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
■ Absolute Maximum Ratings (Ta = 25°C)
Item
Emitter
Detector
Ambient temperature
Internal Circuit
K
C
A
E
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Dimensions
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to
100°C
Tsol
260°C
(see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
±0.3
Rated value
IF
Soldering temperature
Unless otherwise specified, the
tolerances are as shown below.
3 mm max.
Symbol
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Detector
108
EE-SX1137 Photomicrosensor (Transmissive)
■ Engineering Data
Ambient temperature Ta (°C)
Light current IL (mA)
Ta = 25°C
IF = 50 mA
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Light current IL (mA)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Forward current IF (mA)
Forward voltage VF (V)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
VCE = 10 V
0 lx
Ambient temperature Ta (°C)
Collector−Emitter voltage VCE (V)
Response Time vs. Load Resistance Characteristics (Typical)
Ta = 25°C
VCE = 10 V
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Relative light current IL (%)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Dark current ID (nA)
Forward current IF (mA)
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
(Center of
optical axis)
Distance d (mm)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Relative light current IL (%)
Response time tr, tf (μs)
Load resistance RL (kΩ)
Relative light current IL (%)
120
VCC = 5 V
Ta = 25°C
80
d
60
40
20
0
−2.0
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1137 Photomicrosensor (Transmissive)
109
Photomicrosensor (Transmissive)
EE-SX3081/-SX4081
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Incorporates an IC chip with a built-in detector element and amplifier.
• Incorporates a detector element with a built-in temperature compensation circuit.
• A wide supply voltage range: 4.5 to 16 VDC
• Directly connects with C-MOS and TTL.
• High resolution with a 0.5-mm-wide sensing aperture.
• Dark ON model (EE-SX3081)
• Light ON model (EE-SX4081)
Four, C0.3
5±0.1
13.7+0.3
Two, C1±0.3
2.5±0.2
7.5±0.2
10±0.2
8.5±0.1
Optical
axis
■ Absolute Maximum Ratings (Ta = 25°C)
6.5±0.1
2.5+0.1
Item
6.2±0.5
8.2±0.5
Emitter
Cross section AA
(10.5)
(2.5)
Detector
Cross section BB
Internal Circuit
V
O
A
G
Unless otherwise specified, the
tolerances are as shown below.
Ambient temperature
50 mA
(see note 1)
Reverse voltage
VR
4V
Power supply voltage
VCC
16 V
Output voltage
VOUT
28 V
Output current
IOUT
16 mA
Permissible output
dissipation
POUT
250 mW
(see note 1)
Operating
Topr
–40°C to 75°C
Storage
Tstg
–40°C to 85°C
Tsol
260°C
(see note 2)
Soldering temperature
Dimensions
Tolerance
Terminal No.
A
Name
Anode
3 mm max.
±0.3
K
Cathode
3 < mm ≤ 6
±0.375
V
Power supply
(Vcc)
6 < mm ≤ 10
±0.45
O
G
Output (OUT)
Ground (GND)
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
IF
Five, 0.25±0.1
(Five, 0.5±0.1)
K
Symbol
Forward current
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 20 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Low-level output voltage
VOL
0.12 V typ., 0.4 V max.
VCC = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA (EE-SX3081),
IF = 8 mA (EE-SX4081)
High-level output voltage
VOH
15 V min.
VCC = 16 V, RL = 1 kΩ, IF = 8 mA (EE-SX3081),
IF = 0 mA (EE-SX4081)
Current consumption
ICC
3.2 mA typ., 10 mA max.
VCC = 16 V
870 nm typ.
VCC = 4.5 to 16 V
IFT
8 mA max.
VCC = 4.5 to 16 V
Hysteresis
ΔH
15% typ.
VCC = 4.5 to 16 V (see note 1)
Response frequency
f
3 kHz min.
VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA (see note 2)
Response delay time
tPLH (tPHL)
3 μs typ.
VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA (see note 3)
Response delay time
tPHL (tPLH)
20 μs typ.
VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA (see note 3)
Emitter
Detector
Peak spectral sensitivi- λP
ty wavelength
LED current when output is OFF
LED current when output is ON
110
EE-SX3081/-SX4081 Photomicrosensor (Transmissive)
3. The following illustrations show the definition of response
delay time. The value in the parentheses applies to the EESX4081.
Note: 1. Hysteresis denotes the difference in forward LED
current value, expressed in percentage, calculated
from the respective forward LED currents when the
photo IC in turned from ON to OFF and when the
photo IC in turned from OFF to ON.
Input
2. The value of the response frequency is measured
by rotating the disk as shown below.
Output
2.1 mm
0.5 mm
Input
Output
EE-SX3081
EE-SX4081
Disk
0.5 mm
■ Engineering Data
Note: The values in the parentheses apply to the EE-SX4081.
IFT OFF (IFT ON)
IFT ON (IFT OFF)
Supply voltage VCC (V)
LED current IFT (mA)
Forward current IF (mA)
Low-level Output Voltage vs.
Output Current (Typical)
VCC = 5 V
RL = 330 Ω
Ta = 25°C
VOUT
(EE-SX3@@)
VOUT
(EE-SX4@@)
Forward current IF (mA)
IFT OFF (IFT ON)
IFT ON (IFT OFF)
Low-level Output Voltage vs. Ambient Temperature Characteristics
(Typical)
Ta = 25°C
VCC = 5 V
IF = 0 mA (15 mA)
Response Delay Time vs. Forward
Current (Typical)
Ta = 25°C
RL = 1 kΩ
Supply voltage VCC (V)
VCC = 5 V
IF = 0 mA (15 mA)
IOL = 16 mA
IOL = 5 mA
Ambient temperature Ta (°C)
Output current IC (mA)
Response delay time tPHL, tPLH (μs)
Current consumption Icc (mA)
Ta = 25°C
IF = 0 mA (15 mA)
Ta = 70°C
Forward voltage VF (V)
Ambient temperature Ta (°C)
Current Consumption vs. Supply
Voltage (Typical)
Ta = −30°C
Ta = 25°C
Low level output voltage VOL (V)
LED current IFT (mA)
VCC = 5 V
RL = 330 Ω
LED Current vs. Supply Voltage
(Typical)
Repeat Sensing Position
Characteristics (Typical)
Output transistor
LED Current vs. Ambient Temperature Characteristics (Typical)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Low level output voltage VOL (V)
Ambient temperature Ta (°C)
Output allowable dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
Ta = 25°C
IF = 15 mA
VCC = 5 V
RL = 330 Ω
n = repeat 20 times
d1 = 0.01 mm
Center of optical axis
Distance d (mm)
EE-SX3081/-SX4081 Photomicrosensor (Transmissive)
111
Photomicrosensor (Transmissive)
EE-SX1035
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Compact model with a 5.2-mm-wide slot.
• PCB mounting type.
■ Absolute Maximum Ratings (Ta = 25°C)
6.3
Item
Emitter
1±0.1
Symbol
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
5V
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to
100°C
Tsol
260°C
(see note 3)
1±0.1
1±0.1
Optical axis
Detector
Four, 0.25
Four, 0.5
Cross section AA
Cross section BB
(2.5)
Ambient temperature
Internal Circuit
K
C
A
E
Terminal No.
A
K
C
E
Soldering temperature
Unless otherwise specified, the
tolerances are as shown below.
Name
Anode
Cathode
Collector
Emitter
Dimensions
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
3 mm max.
±0.2
3 < mm ≤ 6
±0.24
6 < mm ≤ 10
±0.29
10 < mm ≤ 18
±0.35
18 < mm ≤ 30
±0.42
Rated value
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
Condition
VF
1.2 V typ., 1.5 V max.
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.15 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Emitter
Detector
112
Forward voltage
EE-SX1035 Photomicrosensor (Transmissive)
IF = 30 mA
■ Engineering Data
Ambient temperature Ta (°C)
Ta = 25°C
Light current IL (mA)
IF = 50 mA
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Light current IL (mA)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Forward current IF (mA)
Forward voltage VF (V)
Collector−Emitter voltage VCE (V)
Response Time vs. Load Resistance Characteristics (Typical)
Ta = 25°C
VCE = 10 V
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Relative light current IL (%)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
IF = 20 mA
VCE = 5 V
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
VCE = 10 V
0 lx
Dark current ID (nA)
PC
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
(Center of
optical axis)
80
Response Time Measurement
Circuit
Distance d (mm)
d
60
40
20
0
−2.0
Load resistance RL (kΩ)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Relative light current IL (%)
Response time tr, tf (μs)
Relative light current IL (%)
120
VCC = 5 V
Ta = 25°C
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Input
Output
90 %
10 %
Input
Output
EE-SX1035 Photomicrosensor (Transmissive)
113
Photomicrosensor (Transmissive)
EE-SX1070
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Wide model with a 8-mm-wide slot.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
JAPAN
17.7
6±0.2
■ Absolute Maximum Ratings (Ta = 25°C)
Item
0.5±0.1
8 +0.2
−0.1
Two, C1
Emitter
Optical
axis
0
10 −0.2
7.5±0.2
2.2
2.5
6.2
Detector
Two, 0.7±0.1
Four, 0.5
Four, 0.25
(2.5)
(13.8)
2.35±0.1
(2.5)
5.2±0.1
K
C
A
E
6.6±0.1
Ambient temperature
Two, 0.7±0.1 dia.
Symbol
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 95°C
Storage
Tstg
–30°C to
100°C
Tsol
260°C
(see note 3)
Internal Circuit
K
C
A
E
Soldering temperature
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
3 mm max.
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
114
EE-SX1070 Photomicrosensor (Transmissive)
■ Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
Light Current vs. Forward Current
Characteristics (Typical)
100
30
50
20
10
−20
0
20
40
60
Ta = 25°C
Ta = 70°C
0
100
80
Ambient temperature Ta (°C)
Ta = 25°C
IF = 50 mA
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Collector−Emitter voltage VCE (V)
Response Time vs. Load Resistance Characteristics (Typical)
Forward current IF (mA)
Forward voltage VF (V)
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Relative light current IL (%)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light current IL (mA)
Ta = −30°C
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
VCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
Dark current ID (nA)
0
−40
Ta = 25°C
VCE = 10 V
Light current IL (mA)
PC
40
Forward current IF (mA)
IF
50
Collector dissipation PC (mW)
150
60
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
Distance d (mm)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
Relative light current IL (%)
Response time tr, tf (μs)
Load resistance RL (kΩ)
Relative light current IL (%)
120
VCC = 5 V
Ta = 25°C
80
d
60
40
20
0
−2.0
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1070 Photomicrosensor (Transmissive)
115
Photomicrosensor (Transmissive)
EE-SX3070/-SX4070
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Incorporates an IC chip with a built-in detector element and amplifier.
• Incorporates a detector element with a built-in temperature compensation circuit.
• A wide supply voltage range: 4.5 to 16 VDC
• Directly connects with C-MOS and TTL.
• High resolution with a 0.5-mm-wide sensing aperture.
• Dark ON model (EE-SX3070)
• Light ON model (EE-SX4070)
Two, C1
Optical
axis
■ Absolute Maximum Ratings (Ta = 25°C)
Two, 0.7
Item
Emitter
Five, 0.25
(13.8)
Five, 0.5
(1.25)
Detector
Two, 0.7±0.1 dia.
K
O
A
G
Terminal No.
Reverse voltage
VR
4V
Power supply voltage
VCC
16 V
Output voltage
VOUT
28 V
Output current
IOUT
16 mA
Permissible output POUT
dissipation
V
Unless otherwise specified, the
tolerances are as shown below.
Name
Dimensions
Ambient temperature
A
K
Anode
Cathode
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
V
Power supply
(Vcc)
6 < mm ≤ 10
±0.45
O
G
Output (OUT)
Ground (GND)
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
250 mW
(see note 1)
Operating
Topr
–40°C to 75°C
Storage
Tstg
–40°C to 85°C
Tsol
260°C
(see note 2)
Soldering temperature
Tolerance
Rated value
50 mA
(see note 1)
(1.25)
2.35±0.1
Internal Circuit
Symbol
IF
Forward current
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
VF
1.2 V typ., 1.5 V max.
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Low-level output voltage VOL
0.12 V typ., 0.4 V max.
VCC = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA (EE-SX3070),
IF = 10 mA (EE-SX4070)
High-level output voltage
VOH
15 V min.
VCC = 16 V, RL = 1 kΩ, IF = 10 mA (EE-SX3070),
IF = 0 mA (EE-SX4070)
Current consumption
ICC
3.2 mA typ., 10 mA max.
VCC = 16 V
870 nm typ.
VCC = 4.5 to 16 V
IFT
10 mA max.
VCC = 4.5 to 16 V
ΔH
15% typ.
VCC = 4.5 to 16 V (see note 1)
Forward voltage
Peak spectral sensitivity λP
wavelength
LED current when output is OFF
IF = 20 mA
LED current when output is ON
Hysteresis
Response frequency
f
3 kHz min.
VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA (see note 2)
Response delay time
tPLH (tPHL)
3 μs typ.
VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA (see note 3)
Response delay time
tPHL (tPLH)
20 μs typ.
VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA (see note 3)
116
EE-SX3070/-SX4070 Photomicrosensor (Transmissive)
3. The following illustrations show the definition of response
delay time. The value in the parentheses applies to the EESX4070.
Note: 1. Hysteresis denotes the difference in forward LED
current value, expressed in percentage, calculated
from the respective forward LED currents when the
photo IC in turned from ON to OFF and when the
photo IC in turned from OFF to ON.
Input
2. The value of the response frequency is measured
by rotating the disk as shown below.
Output
2.1 mm
0.5 mm
Input
Output
EE-SX3070
EE-SX4070
Disk
0.5 mm
■ Engineering Data
Note: The values in the parentheses apply to the EE-SX4070.
IFT OFF (IFT ON)
IFT ON (IFT OFF)
Supply voltage VCC (V)
LED current IFT (mA)
Forward current IF (mA)
Ta = 70°C
Low-level Output Voltage vs.
Output Current (Typical)
VCC = 5 V
RL = 330 Ω
Ta = 25°C
VOUT
(EE-SX3@@)
VOUT
(EE-SX4@@)
Forward current IF (mA)
IFT OFF (IFT ON)
IFT ON (IFT OFF)
Low-level Output Voltage vs. Ambient Temperature Characteristics
(Typical)
Ta = 25°C
VCC = 5 V
IF = 0 mA (15 mA)
Response Delay Time vs. Forward
Current (Typical)
Ta = 25°C
RL = 1 kΩ
Supply voltage VCC (V)
VCC = 5 V
IF = 0 mA (15 mA)
IOL = 16 mA
IOL = 5 mA
Ambient temperature Ta (°C)
Output current IC (mA)
Response delay time tPHL, tPLH (μs)
Current consumption Icc (mA)
Ta = 25°C
IF = 0 mA (15 mA)
Ta = 25°C
Forward voltage VF (V)
Ambient temperature Ta (°C)
Current Consumption vs. Supply
Voltage (Typical)
Ta = −30°C
Low level output voltage VOL (V)
LED current IFT (mA)
VCC = 5 V
RL = 330 Ω
LED Current vs. Supply Voltage
(Typical)
Repeat Sensing Position
Characteristics (Typical)
Output transistor
LED Current vs. Ambient Temperature Characteristics (Typical)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Low level output voltage VOL (V)
Ambient temperature Ta (°C)
Output allowable dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
Ta = 25°C
IF = 15 mA
VCC = 5 V
RL = 330 Ω
n = repeat 20 times
d1 = 0.01 mm
Center of optical axis
Distance d (mm)
EE-SX3070/-SX4070 Photomicrosensor (Transmissive)
117
Photomicrosensor (Transmissive)
EE-SX1140
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• General-purpose model with a 14-mm-wide slot.
• 16.3-mm-tall model with a deep slot.
• PCB mounting type.
Four, C0.3
Four, 0.8
3.2±0.1 dia. through-hole
3
■ Absolute Maximum Ratings (Ta = 25°C)
5
Four, 0.8
Item
14
Emitter
23
0.2
A B
Optical
axis
Detector
16.3
12.5±0.15
(13.5)
5.2
2.8
C
A B
Four, 0.5
4.5±0.5
K
Four, 0.25
(2.5)
Cross section AA
A
(2.5)
Cross section BB
(19.9)
Ambient temperature
Internal Circuit
C
K
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to
100°C
Tsol
260°C
(see note 3)
Soldering temperature
Unless otherwise specified, the
tolerances are as shown below.
E
A
Dimensions
Terminal No.
Name
A
Anode
K
C
E
Cathode
Collector
Emitter
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
6 < mm ≤ 10
±0.375
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
IF
1.5
1.5
E
Symbol
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.4 mA min.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Detector
118
EE-SX1140 Photomicrosensor (Transmissive)
■ Engineering Data
150
100
30
50
20
10
−20
0
20
40
60
0
100
80
Ta = −30°C
Ta = 25°C
40
Ta = 70°C
30
20
0
10
Relative light current IL (%)
Light current IL (mA)
IF = 40 mA
IF = 30 mA
5
IF = 20 mA
3
IF = 10 mA
2
1
0
1
2
3
4
5
6
7
8
9
10,000
Relative light current IL (%)
VCC = 5 V
Ta = 25°C
Response time tr, tf (μs)
0.8
1
1.2
1.4
1.6
2
1.8
0
100
90
80
70
1,000
tf
100
tr
10
Load resistance RL (kΩ)
20
40
60
30
40
50
80
100
VCE = 10 V
0 lx
1,000
100
10
1
0.1
0.01
0.001
−30 −20 −10 0
10 20 30 40 50 60 70 80 90
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
120
120
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
d
80
60
40
20
0
10
1
0
20
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
10,000
−20
10
Forward current IF (mA)
110
60
−40
10
Response Time vs. Load Resistance Characteristics (Typical)
0.1
0.6
IF = 20 mA
VCE = 5 V
Collector−Emitter voltage VCE (V)
1
0.01
0.4
120
7
4
0.2
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
IF = 50 mA
9
6
4
Forward voltage VF (V)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
8
6
0
0
Ambient temperature Ta (°C)
Ta = 25°C
8
10
Dark current ID (nA)
0
−40
Ta = 25°C
VCE = 10 V
50
−1.5 −0.75
0
0.75
1.5
2.25
Distance d (mm)
3
Relative light current IL (%)
40
10
Light current IL (mA)
PC
Forward current IF (mA)
IF
50
Light Current vs. Forward Current
Characteristics (Typical)
60
Collector dissipation PC (mW)
60
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
Forward Current vs. Collector
Dissipation Temperature Rating
80
d
60
40
20
0
−2.0
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
0
t
Output
90%
10%
0
t
tr
Input
tf
IL
VCC
Output
RL
EE-SX1140 Photomicrosensor (Transmissive)
119
Photomicrosensor (Transmissive)
EE-SX129
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• High-resolution model with a 0.2-mm-wide sensing aperture.
• PCB mounting type.
13
■ Absolute Maximum Ratings (Ta = 25°C)
8
1 +0.5
0
5
6
Item
0.5 min.
3
Part B
2.5
Optical
axis
2
2.1+0.2
0 dia.
A
2
holes
Detector
13.4±2
0.25
0.5
9.2±0.3
0.8
1.94±0.2
E
A
C
K
E
C
A
K
Symbol
Cross section AA
Ambient temperature
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–40°C to
100°C
Tsol
260°C
(see note 3)
Internal Circuit
E
A
C
K
Terminal No.
Name
A
Anode
K
C
E
Cathode
Collector
Emitter
Soldering temperature
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
Forward current
0.2
A B
3±0.3
5
8
5
2.5
R2.5
0.2
Emitter
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
920 nm typ.
IF = 20 mA
Light current
IL
0.2 mA min.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
---
---
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
120
EE-SX129 Photomicrosensor (Transmissive)
■ Engineering Data
IF = 30 mA
IF = 20 mA
IF = 10 mA
Collector−Emitter voltage VCE (V)
Response time tr, tf (μs)
VCC = 5 V
Ta = 25°C
VCE = 10 V
0 lx
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
-0.2
Load resistance RL (kΩ)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
Relative light current IL (%)
Response Time vs. Load Resistance Characteristics (Typical)
Light current IL (mA)
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
-0.1
0
0.1
0.2
Distance d (mm)
0.3
0.4
Sensing Position Characteristics
(Typical)
120
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
IF = 40 mA
Forward current IF (mA)
Dark current ID (nA)
IF = 50 mA
Ta = 70°C
Relative light current IL (%)
Light current IL (mA)
Ta = 25°C
Ta = 25°C
Forward voltage VF (V)
Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Ta = −30°C
Relative light current IL (%)
PC
Light Current vs. Forward Current
Characteristics (Typical)
Ta = 25°C
VCE = 10 V
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
80
d
60
40
20
0
−2.0
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
Input
90 %
10 %
Vcc
Output
EE-SX129 Photomicrosensor (Transmissive)
121
Photomicrosensor (Transmissive)
EE-SH3 Series
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• High-resolution model with a 0.2-mm-wide or 0.5-mm-wide sensing
aperture, high-sensitivity model with a 1-mm-wide sensing aperture, and model with a horizontal sensing aperture are available.
• Solder terminal models:
EE-SH3/-SH3-CS/-SH3-DS/-SH3-GS
• PCB terminal models:
EE-SH3-B/-SH3-C/-SH3-D/-SH3-G
Four, R1
Two, C1.5
6.2
19±0.15
25.4
Two, 3.2±0.2
dia. holes
Matted
Solder terminal
Cross section AA
Center mark
3.4±0.2
PCB terminal
Cross section AA
■ Absolute Maximum Ratings (Ta = 25°C)
Item
Emitter
10.2
Four, 0.25
2.54±0.2
Detector
Model
EE-SH3(-B)
EE-SH3-C(S)
EE-SH3-D(S)
EE-SH3-G(S)
Internal Circuit
K
Aperture (a x b)
2.1 x 0.5
2.1 x 1.0
2.1 x 0.2
0.5 x 2.1
C
Unless otherwise specified, the
tolerances are as shown below.
A
Dimensions
E
Terminal No.
Name
A
Anode
K
C
E
Cathode
Collector
Emitter
Tolerance
3 mm max.
±0.2
3 < mm ≤ 6
±0.24
6 < mm ≤ 10
±0.29
10 < mm ≤ 18
±0.35
18 < mm ≤ 30
±0.42
Ambient temperature
Rated value
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to 100°C
Tsol
260°C
(see note 3)
7.2±0.2
7.2±0.2
7.6±0.3
Symbol
Forward current
Soldering temperature
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
EE-SH3(-B)
Emitter
Detector
EE-SH3-D(S)
Condition
EE-SH3-G(S)
Forward voltage
VF
1.2 V typ., 1.5 V max.
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 to 14 mA typ. 1 to 28 mA typ.
Dark current
ID
2 nA typ., 200 nA max.
Leakage current
ILEAK
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
Peak spectral sensitivity λP
wavelength
IF = 30 mA
0.1 mA min.
0.5 to 14 mA
IF = 20 mA,
VCE = 10 V
VCE = 10 V,
0 lx
---
---
0.1 V typ.,
0.4 V max.
IF = 20 mA,
IL = 0.1 mA
850 nm typ.
VCE = 10 V
VCC = 5 V,
RL = 100 Ω,
IL = 5 mA
Rising time
tr
4 μs typ.
Falling time
tf
4 μs typ.
122
EE-SH3-C(S)
EE-SH3 Series Photomicrosensor (Transmissive)
■ Engineering Data
IF = 50 mA
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Collector−Emitter voltage VCE (V)
VCC = 5 V
Ta = 25°C
IF = 20 mA
VCE = 10 V
Ta = 25°C
−
d
0
+
Center of optical axis
Distance d (mm)
Light current IL (mA)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Center of optical axis
Sensing Position Characteristics
(EE-SH3-C(S))
IF = 20 mA
VCE = 10 V
Ta = 25°C
VCE = 10 V
0 lx
Ambient temperature Ta (°C)
Sensing Position Characteristics
(EE-SH3(-B))
Distance d (mm)
Relative light current IL (%)
Relative light current IL (%)
Sensing Position Characteristics
(EE-SH3-G(S))
IF = 20 mA
VCE = 5 V
Sensing Position Characteristics
(EE-SH3-D(S))
Load resistance RL (kΩ)
Ta = 25°C
VCE = 10 V
Forward current IF (mA)
Ambient temperature Ta (°C)
Relative light current IL (%)
Response time tr, tf (μs)
Response Time vs. Load Resistance Characteristics (Typical)
Ta = 70°C
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Relative light current IL (%)
Light current IL (mA)
Ta = 25°C
Ta = 25°C
Forward voltage VF (V)
Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter
Voltage Characteristics (EE-SH3(-B))
Ta = −30°C
Dark current ID (nA)
PC
Light Current vs. Forward Current
Characteristics (Typical)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Relative light current IL (%)
IF
Forward Current vs. Forward
Voltage Characteristics (Typical)
Forward current IF (mA)
Collector dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
Center of optical axis
Distance d (mm)
Response Time Measurement
Circuit
Input
Center of optical axis
Output
90 %
10 %
Input
Output
Distance d (mm)
EE-SH3 Series Photomicrosensor (Transmissive)
123
Photomicrosensor (Transmissive)
EE-SV3 Series
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• High-resolution model with a 0.2-mm-wide or 0.5-mm-wide sensing
aperture, high-sensitivity model with a 1-mm-wide sensing aperture, and model with a horizontal sensing aperture are available.
• Solder terminal models:
EE-SV3/-SV3-CS/-SV3-DS/-SV3-GS
• PCB terminal models
EE-SV3-B/-SV3-C/-SV3-D/-SV3-G
Center mark
■ Absolute Maximum Ratings (Ta = 25°C)
Four,
R1
Four, 0.25
Four, R1
Two,
3.2±0.2 dia.
holes
Four, 1.5
2.54±0.2
Detector
2.54±0.2
Cross section AA
Model
K
Four, 0.5
Two,
3.2±0.2 dia.
holes
Cross section AA
EE-SV3(-B)
EE-SV3-C(S)
EE-SV3-D(S)
EE-SV3-G(S)
Internal Circuit
Emitter
Aperture (a x b)
2.1 x 0.5
2.1 x 1.0
2.1 x 0.2
0.5 x 2.1
Terminal No.
Name
A
Anode
K
C
E
Cathode
Collector
Emitter
Dimensions
Tolerance
3 mm max.
±0.2
3 < mm ≤ 6
±0.24
6 < mm ≤ 10
±0.29
10 < mm ≤ 18
±0.35
18 < mm ≤ 30
±0.42
IF
50 mA
(see note 1)
Pulse forward
current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter voltage
VCEO
30 V
Emitter–Collector voltage
VECO
---
Collector current IC
20 mA
Collector dissipa- PC
tion
100 mW
(see note 1)
Topr
–25°C to
85°C
Storage
Tstg
–30°C to
100°C
Soldering temperature
Tsol
260°C
(see note 3)
Unless otherwise specified, the
tolerances are as shown below.
E
Symbol Rated value
Forward current
Ambient tem- Operating
perature
C
A
Item
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
EE-SV3(-B)
Emitter
Detector
EE-SV3-D(S)
Condition
EE-SV3-G(S)
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 to 14 mA
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V,
0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
Peak spectral sensitivity λP
wavelength
1 to 28 mA
0.1 mA min.
---
0.5 to 14 mA
0.1 V typ.,
0.4 V max.
IF = 20 mA,
VCE = 10 V
IF = 20 mA,
IL = 0.1 mA
850 nm typ.
VCE = 10 V
VCC = 5 V,
RL = 100 Ω,
IL = 5 mA
Rising time
tr
4 μs typ.
Falling time
tf
4 μs typ.
124
EE-SV3-C(S)
EE-SV3 Series Photomicrosensor (Transmissive)
■ Engineering Data
IF = 50 mA
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Collector−Emitter voltage VCE (V)
VCC = 5 V
Ta = 25°C
IF = 20 mA
VCE = 10 V
Ta = 25°C
−
d
0
+
Center of optical axis
Distance d (mm)
Light current IL (mA)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Center of optical axis
Sensing Position Characteristics
(EE-SV3-C(S))
IF = 20 mA
VCE = 10 V
Ta = 25°C
VCE = 10 V
0 lx
Ambient temperature Ta (°C)
Sensing Position Characteristics
(EE-SV3(-B))
Distance d (mm)
Relative light current IL (%)
Relative light current IL (%)
Sensing Position Characteristics
(EE-SV3-G(S))
IF = 20 mA
VCE = 5 V
Sensing Position Characteristics
(EE-SV3-D(S))
Load resistance RL (kΩ)
Ta = 25°C
VCE = 10 V
Forward current IF (mA)
Ambient temperature Ta (°C)
Relative light current IL (%)
Response time tr, tf (μs)
Response Time vs. Load Resistance Characteristics (Typical)
Ta = 70°C
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Relative light current IL (%)
Light current IL (mA)
Ta = 25°C
Ta = 25°C
Forward voltage VF (V)
Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter
Voltage Characteristics (EE-SV3(-B))
Ta = −30°C
Dark current ID (nA)
PC
Light Current vs. Forward Current
Characteristics (Typical)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Relative light current IL (%)
IF
Forward Current vs. Forward
Voltage Characteristics (Typical)
Forward current IF (mA)
Collector dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
Center of optical axis
Distance d (mm)
Response Time Measurement
Circuit
Input
Center of optical axis
Output
90 %
10 %
Input
Output
Distance d (mm)
EE-SV3 Series Photomicrosensor (Transmissive)
125
Photomicrosensor (Transmissive)
EE-SX138
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
•
•
•
•
Four, 0.1 taper
General-purpose model with a 3.4-mm-wide slot.
PCB mounting type.
High resolution with a 0.5-mm-wide aperture.
Screw-mounting possible.
■ Absolute Maximum Ratings (Ta = 25°C)
23.8
Item
Emitter
Part A
2.1 × 0.5 Aperture 4.75
Four, R1.25
0.2
(Optical axis)
Detector
Four, 1 R
Four, 0.25
Four, 0.5
2.54±0.2
7.6±0.3
14.3
13.6
Ambient temperature
Internal Circuit
A
C
A
K
C
E
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
K
Name
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–40°C to
100°C
Tsol
260°C
(see note 3)
Anode
Cathode
Collector
Emitter
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
3 mm max.
±0.2
3 < mm ≤ 6
±0.24
6 < mm ≤ 10
±0.29
10 < mm ≤ 18
±0.35
18 < mm ≤ 30
±0.42
Rated value
IF
Soldering temperature
E
Terminal No.
Symbol
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
1.9 mA min., 14 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Detector
126
EE-SX138 Photomicrosensor (Transmissive)
■ Engineering Data
IF = 50 mA
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Collector−Emitter voltage VCE (V)
Response Time vs. Load Resistance Characteristics (Typical)
Light current IL (mA)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Relative light current IL (%)
Light current IL (mA)
Ta = 25°C
Ta = 25°C
VCE = 10 V
Forward current IF (mA)
Forward voltage VF (V)
Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
VCE = 10 V
0 lx
Dark current ID (nA)
PC
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
(Center of
optical axis)
Distance d (mm)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Relative light current IL (%)
Response time tr, tf (μs)
Load resistance RL (kΩ)
Relative light current IL (%)
120
VCC = 5 V
Ta = 25°C
80
d
60
40
20
0
−2.0
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
Input
90 %
10 %
Vcc
Output
EE-SX138 Photomicrosensor (Transmissive)
127
Photomicrosensor (Transmissive)
EE-SX153
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
•
•
•
•
•
0.5
EE-SX
153
6.2
6.4
JAPAN
13.6
2
0.3
3.4±0.2
0.2
■ Absolute Maximum Ratings (Ta = 25°C)
2.1
A
General-purpose model with a 3.4-mm-wide slot.
PCB mounting type.
High resolution with a 0.5-mm-wide aperture.
With a horizontal sensing aperture.
Screw-mounting possible.
3.2
Item
3.2±0.2dia. holes
10.2
0.5
Emitter
Symbol
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–40°C to
100°C
Tsol
260°C
(see note 3)
7.2±0.2
6
3
3
Two, R1
7.8
1.2
0.6
Four, 0.8
Four, 1.5
A
Four, 0.25
7.6±0.2
K
C
K
C
A
E
A
Detector
Two, 2.54
Cross section AA
E
Internal Circuit
K
Ambient temperature
C
Unless otherwise specified, the
tolerances are as shown below.
A
Terminal No.
A
K
C
E
Dimensions
E
Soldering temperature
Tolerance
3 mm max.
±0.3
Name
3 < mm ≤ 6
±0.375
Anode
Cathode
Collector
Emitter
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
Forward current
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Detector
128
EE-SX153 Photomicrosensor (Transmissive)
■ Engineering Data
Ta = −30°C
Ta = 25°C
Ta = 70°C
Forward current IF (mA)
Forward voltage VF (V)
Ambient temperature Ta (°C)
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
IF = 30 mA
IF = 20 mA
IF = 10 mA
Dark current ID (nA)
IF = 40 mA
Collector−Emitter voltage VCE (V)
Response time tr, tf (μs)
VCC = 5 V
Ta = 25°C
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
120
120
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
80
d
60
40
20
0
Load resistance RL (kΩ)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
Response Time vs. Load Resistance Characteristics (Typical)
VCE = 10 V
0 lx
−0.5 −0.25
0
0.25
0.5
0.75
Distance d (mm)
1.0
Relative light current IL (%)
IF = 50 mA
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
(Center of optical axis)
Ta = 25°C
Relative light current IL (%)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light current IL (mA)
Light current IL (mA)
PC
Light Current vs. Forward Current
Characteristics (Typical)
Ta = 25°C
VCE = 10 V
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
100
d
80
60
40
20
0
−2.0
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX153 Photomicrosensor (Transmissive)
129
Photomicrosensor (Transmissive)
EE-SX1088
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
•
•
•
•
25±0.2
19±0.15
Two, R1
5±0.2 6±0.2
Four, C0.3
Two, 3.2±0.2 dia. holes
■ Absolute Maximum Ratings (Ta = 25°C)
Two, C2
Item
0.5±0.1
0.5±0.1
6.5±0.1
(Optical axis)
Emitter
10±0.2
7.2±0.2
8.4±0.1
2.5±0.1
3±0.4
General-purpose model with a 3.4-mm-wide slot.
Mounts to PCBs or connects to connectors.
High resolution with a 0.5-mm-wide aperture.
OMRON’s XK8-series Connectors can be connected without soldering. Contact your OMRON representative for information on
obtaining XK8-series Connectors.
Four, 0.5
Four, 0.25
Detector
Cross section BB
Cross section AA
Internal Circuit
K
C
A
Ambient temperature
Unless otherwise specified, the
tolerances are as shown below.
E
Dimensions
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
K
C
Cathode
Collector
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
E
Emitter
18 < mm ≤ 30
±0.65
Rated value
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to
100°C
Tsol
260°C
(see note 3)
Soldering temperature
Tolerance
Terminal No.
Name
A
Anode
Symbol
Forward current
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.15 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Detector
130
EE-SX1088 Photomicrosensor (Transmissive)
■ Engineering Data
IF = 50 mA
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Collector−Emitter voltage VCE (V)
Response Time vs. Load Resistance Characteristics (Typical)
Light current IL (mA)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Relative light current IL (%)
Light current IL (mA)
Ta = 25°C
Ta = 25°C
VCE = 10 V
Forward voltage VF (V)
Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Forward current IF (mA)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
VCE = 10 V
0 lx
Dark current ID (nA)
PC
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
(Center of
optical axis)
Distance d (mm)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Relative light current IL (%)
Response time tr, tf (μs)
Load resistance RL (kΩ)
Relative light current IL (%)
120
VCC = 5 V
Ta = 25°C
80
d
60
40
20
0
−2.0
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1088 Photomicrosensor (Transmissive)
131
Photomicrosensor (Transmissive)
EE-SX1096
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
•
•
•
•
•
25±0.2
19±0.15
Two, R1
5±0.2 6±0.2
Two, 3.2±0.2 dia. holes
Four, C0.3
Two, C2
■ Absolute Maximum Ratings (Ta = 25°C)
2.1±0.15
2.1±0.15
General-purpose model with a 3.4-mm-wide slot.
Mounts to PCBs or connects to connectors.
High resolution with a 0.5-mm-wide aperture.
With a horizontal sensing slot.
OMRON’s XK8-series Connectors can be connected without soldering. Contact your OMRON representative for information on
obtaining XK8-series Connectors.
Item
0.5±0.1
0.5±0.1
Emitter
(Optical axis)
10±0.2
7.2±0.2
2.5±0.1
Four, 0.5
3±0.4
Four, 0.25
Detector
Cross section AA
Cross section BB
Internal Circuit
K
C
A
Unless otherwise specified, the
tolerances are as shown below.
E
Dimensions
Tolerance
3 mm max.
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
E
18 < mm ≤ 30
±0.65
Rated value
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to 100°C
Tsol
260°C
(see note 3)
Soldering temperature
±0.3
Terminal No.
Name
A
Anode
K
Cathode
C
Collector
Emitter
Ambient temperature
Symbol
Forward current
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
132
EE-SX1096 Photomicrosensor (Transmissive)
■ Engineering Data
Light current IL (mA)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ambient temperature Ta (°C)
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
IF = 20 mA
IF = 10 mA
Dark current ID (nA)
IF = 30 mA
Collector−Emitter voltage VCE (V)
Response time tr, tf (μs)
VCC = 5 V
Ta = 25°C
Ambient temperature Ta (°C)
120
80
d
60
40
20
−0.5
−0.25
0
0.25
0.5
Distance d (mm)
0.75
1.0
Sensing Position Characteristics
(Typical)
120
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
0
Load resistance RL (kΩ)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
Response Time vs. Load Resistance Characteristics (Typical)
VCE = 10 V
0 lx
Relative light current IL (%)
IF = 40 mA
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
Relative light current IL (%)
Light current IL (mA)
Ta = 25°C
IF = 50 mA
Forward current IF (mA)
Forward voltage VF (V)
(Center of optical axis)
PC
Light Current vs. Forward Current
Characteristics (Typical)
Ta = 25°C
VCE = 10 V
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
100
80
d
60
40
20
0
−2.0
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1096 Photomicrosensor (Transmissive)
133
Photomicrosensor (Transmissive)
EE-SX3088/-SX4088
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Incorporates an IC chip with a built-in detector element and amplifier.
• A wide supply voltage range: 4.5 to 16 VDC
• Directly connects with C-MOS and TTL.
• High resolution with a 0.5-mm-wide sensing aperture.
• Dark ON model (EE-SX3088)
• Light ON model (EE-SX4088)
• OMRON’s XK8-series Connectors can be connected to the lead
wires without a PCB. Contact your OMRON representative for information on obtaining XK8-series Connectors.
25±0.2
19±0.15
Two, R1
Two, 3.2±0.2 dia. holes
Four, C0.3
Two, C2
0.5±0.1
0.5±0.1
■ Absolute Maximum Ratings (Ta = 25°C)
Optical axis
8.4±0.1
Item
Four, 0.25
Emitter
3.5±0.4
Symbol
50 mA
(see note 1)
Reverse voltage
VR
4V
Power supply voltage
VCC
16 V
Output voltage
VOUT
28 V
Output current
IOUT
16 mA
Four, 0.5
Cross section BB
Cross section AA
Detector
Internal Circuit
K
V
Permissible output POUT
dissipation
O
A
G
Terminal No.
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Name
Ambient temperature
Tolerance
A
K
Anode
Cathode
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
V
Power supply
(Vcc)
6 < mm ≤ 10
±0.45
O
G
Output (OUT)
Ground (GND)
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
IF
Forward current
250 mW
(see note 1)
Operating
Topr
–40°C to 75°C
Storage
Tstg
–40°C to 85°C
Tsol
260°C
(see note 2)
Soldering temperature
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 20 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm
IF = 20 mA
Low-level output voltage
VOL
0.12 V typ., 0.4 V max.
VCC = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA (EE-SX3088),
IF = 5 mA (EE-SX4088)
High-level output voltage
VOH
15 V min.
VCC = 16 V, RL = 1 kΩ, IF = 5 mA (EE-SX3088),
IF = 0 mA (EE-SX4088)
Current consumption
ICC
3.2 mA typ., 10 mA max.
VCC = 16 V
870 nm
VCC = 4.5 to 16 V
IFT
2 mA typ., 5 mA max.
VCC = 4.5 to 16 V
Hysteresis
ΔH
15% typ.
VCC = 4.5 to 16 V (see note 1)
Response frequency
f
3kHz min.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2)
Response delay time
tPLH (tPHL)
3 μs typ.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Response delay time
tPHL (tPLH)
20 μs typ.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Emitter
Detector
Peak spectral sensitivi- λP
ty wavelength
LED current when output is OFF
LED current when output is ON
134
EE-SX3088/-SX4088 Photomicrosensor (Transmissive)
3. The following illustrations show the definition of response
delay time. The value in the parentheses applies to the EESX4088.
Note: 1. Hysteresis denotes the difference in forward LED
current value, expressed in percentage, calculated
from the respective forward LED currents when the
photo IC in turned from ON to OFF and when the
photo IC in turned from OFF to ON.
Input
2. The value of the response frequency is measured
by rotating the disk as shown below.
Output
2.1 mm
0.5 mm
Input
Output
EE-SX3088
EE-SX4088
Disk
0.5 mm
■ Engineering Data
Note: The values in the parentheses apply to the EE-SX4088.
IFT OFF (IFT ON)
IFT ON (IFT OFF)
Supply voltage VCC (V)
LED current IFT (mA)
Forward current IF (mA)
Low-level Output Voltage vs.
Output Current (Typical)
VCC = 5 V
RL = 330 Ω
Ta = 25°C
VOUT
(EE-SX3@@)
VOUT
(EE-SX4@@)
Forward current IF (mA)
IFT OFF (IFT ON)
IFT ON (IFT OFF)
Low-level Output Voltage vs. Ambient Temperature Characteristics
(Typical)
Ta = 25°C
VCC = 5 V
IF = 0 mA (15 mA)
Response Delay Time vs. Forward
Current (Typical)
Ta = 25°C
RL = 1 kΩ
Supply voltage VCC (V)
VCC = 5 V
IF = 0 mA (15 mA)
IOL = 16 mA
IOL = 5 mA
Ambient temperature Ta (°C)
Output current IC (mA)
Response delay time tPHL, tPLH (μs)
Current consumption Icc (mA)
Ta = 25°C
IF = 0 mA (15 mA)
Ta = 70°C
Forward voltage VF (V)
Ambient temperature Ta (°C)
Current Consumption vs. Supply
Voltage (Typical)
Ta = −30°C
Ta = 25°C
Low level output voltage VOL (V)
LED current IFT (mA)
VCC = 5 V
RL = 330 Ω
LED Current vs. Supply Voltage
(Typical)
Repeat Sensing Position
Characteristics (Typical)
Output transistor
LED Current vs. Ambient Temperature Characteristics (Typical)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Low level output voltage VOL (V)
Ambient temperature Ta (°C)
Output allowable dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
Ta = 25°C
IF = 15 mA
VCC = 5 V
RL = 330 Ω
n = repeat 20 times
d1 = 0.01 mm
Center of optical axis
Distance d (mm)
EE-SX3088/-SX4088 Photomicrosensor (Transmissive)
135
Photomicrosensor (Transmissive)
EE-SG3/EE-SG3-B
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Dust-proof model.
• Solder terminal model (EE-SG3).
• PCB terminal model (EE-SG3-B).
■ Absolute Maximum Ratings (Ta = 25°C)
13
19±0.1
25.4±0.2
Two, 3.2±0.2
dia. holes
Item
Emitter
3.6±0.2
Optical axis
1.2
Four, 0.5
Four, 0.25
7.62±0.3
Detector
2.54±0.3
0.8
Four, 1.5
2.54
0.6
Cross section AA
Cross section AA
Internal Circuit
K
Ambient temperature
C
E
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Dimensions
Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to 100°C
Tsol
260°C
(see note 3)
Soldering temperature
Unless otherwise specified, the
tolerances are as shown below.
A
Symbol
Forward current
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
2 mA min., 40 mA max.
IF = 15 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 30 mA, IL = 1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
136
EE-SG3/EE-SG3-B Photomicrosensor (Transmissive)
■ Engineering Data
PC
Ta = 25°C
VCE = 10 V
Ta = −30°C
Ta = 25°C
Ta = 70°C
Forward voltage VF (V)
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
IF = 25 mA
IF = 20 mA
IF = 15 mA
IF = 10 mA
Relative light current IL (%)
Ta = 25°C
IF = 20 mA
VCE = 5 V
Forward current IF (mA)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
VCE = 10 V
0 lx
Dark current ID (nA)
Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light current IL (mA)
Light Current vs. Forward Current
Characteristics (Typical)
Light current IL (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
IF = 5 mA
Collector−Emitter voltage VCE (V)
Response Time vs. Load Resistance Characteristics (Typical)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
Relative light current IL (%)
Response time tr, tf (μs)
Relative light current IL (%)
120
VCC = 5 V
Ta = 25°C
80
d
60
40
20
0
−2.0
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Load resistance RL (kΩ)
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SG3/EE-SG3-B Photomicrosensor (Transmissive)
137
Photomicrosensor (Transmissive)
EE-SX1161-W11
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Dust-proof model.
• Pre-wired Sensors (AWG28).
• Solder-less lead wire connection to increase reliability.
9.4±0.2
Optical axis
■ Absolute Maximum Ratings (Ta = 25°C)
23.7±0.2
Item
5±0.2
Emitter
Four, C0.4
2±0.15
Emitter
12.95±0.25
3.2±0.15
Sensing 0.2
window
1.1±0.1
2.1
Detector
14.2±0.15
1.1±0.1
4.55
B
A
Optical 1.4±0.2
axis
Four, R1.6
Four, R1
Detector
2.1
6.35±0.25
9.7±0.2
12.5±0.2
10.85±0.1
4.5
10.85±0.1
3.2±0.25
3.1
Two, 2.65
610MIN.
E
4
C
B
K
A
A
Ambient temperature
Cross section A-A
Cross section B-B 3.55
11.4±0.2
E
K
C
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Rated value
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
5V
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 80°C
Storage
Tstg
–25°C to 85°C
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. If you mount the Sensor with screws, use M3 screws, and
flat washers and use a tightening torque of 0.5 N·m max.
Internal Circuit
A
Symbol
Forward current
Tolerance
3 mm max.
±0.3
Terminal No.
Name
A
Anode
3 < mm ≤ 6
±0.375
K
C
Cathode
Collector
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
E
Emitter
18 < mm ≤ 30
±0.65
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.625 mA min.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.15 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Detector
138
EE-SX1161-W11 Photomicrosensor (Transmissive)
■ Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
22
100
30
50
20
10
0
-40
-20
0
20
40
60
Ta = 25°C
Ta = 70°C
IF = 40 mA
14
IF = 30 mA
10
IF = 20 mA
8
6
IF = 10 mA
4
8
6
0
10
20
30
40
50
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
VCE = 10 V
0 lx
Dark current ID (nA)
IF = 50 mA
12
10
Forward current IF (mA)
Relative Light Current vs.
Ambient Temperature Characteristics (Typical)
Relative light current IL (%)
Ta = 25°C
22
16
12
0
26
18
14
Forward voltage VF (V)
Voltage Characteristics (Typical)
20
16
2
Ambient temperature Ta (°C)
24
18
4
0
100
80
Ta = 25°C
VCE = 10 V
20
Light current IL (mA)
PC
40
Forward current IF (mA)
50
Collector dissipation PC (mW)
IF
Light current IL (mA)
Light Current vs. Forward Current
Characteristics (Typical)
150
60
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
2
1
2
3
4
5
6
7
8
9
10
Ambient temperature Ta (°C)
Response Time vs. Load Resistance Characteristics (Typical)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
120
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of
optical axis)
80
d
60
40
20
0
-2.5 -2.0 -1.5 -1.0 -0.5
0
0.5
1.0
Distance d (mm)
1.5
2.0
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
Relative light current IL (%)
Relative light current IL (%)
120
VCC = 5 V
Ta = 25°C
2.5
(Center of optical axis)
0
0
80
d
60
40
20
0
-2.5 -2.0 -1.5 -1.0 -0.5
0
0.5
1.0
1.5
2.0
2.5
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1161-W11 Photomicrosensor (Transmissive)
139
Photomicrosensor (Transmissive)
EE-SX3161-W11/4161-W11
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Dust-proof model.
• Light-receiving element and amplification circuits contained in one
chip.
• Can use a power supply voltage of 4.5 to 16 V.
• Connects directly to C-MOS or TTL.
• Dark-ON Sensor: EE-SX3161-W11
• Light-ON Sensor: EE-SX4161-W11
• Pre-wired Sensors (AWG28).
• Solder-less lead wire connection to increase reliability.
9.4±0.2
Optical axis
23.7±0.2
5±0.2
Four, C0.4
2±0.15
Emitter
3.2±0.15
Sensing 0.2
window
1.1±0.1
2.1
Detector
12.95±0.25
B
A
■ Absolute Maximum Ratings (Ta = 25°C)
14.2±0.15
1.1±0.1
4.55
Optical 1.4±0.2
axis
Four, R1.6
Four, R1
Item
Emitter
2.1
6.35±0.25
9.7±0.2
12.5±0.2
10.85±0.1
4.5
3.2±0.25
3.1
G
4
10.85±0.1
Two, 2.65
Detector
610MIN.
V
O
B
K
A
A
Cross section A-A
Cross section B-B 3.55
11.4±0.2
Ambient temperature
G
O
K
V
Terminal No.
Unless otherwise specified, the
tolerances are as shown below.
Name
Dimensions
Tolerance
A
K
Anode
Cathode
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
V
Power supply
(Vcc)
6 < mm ≤ 10
±0.45
O
G
Output (OUT)
Ground (GND)
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
50 mA
(see note 1)
Reverse voltage
VR
4V
Power supply voltage
VCC
16 V
Output voltage
VOUT
28 V
Output current
IOUT
16 mA
Permissible output POUT
dissipation
Internal Circuit
A
Symbol
IF
Forward current
250 mW
(see note 1)
Operating
Topr
–25°C to 75°C
Storage
Tstg
–25°C to 85°C
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. If you mount the Sensor with screws, use M3 screws, and
flat washers and use a tightening torque of 0.5 N·m max.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 20 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm
IF = 20 mA
Low-level output voltage
VOL
0.12 V typ., 0.4 V max.
VCC = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA (EE-SX3161),
IF = 10 mA (EE-SX4161)
High-level output voltage
VOH
15 V min.
VCC = 16 V, RL = 1 kΩ, IF = 10 mA (EE-SX3161),
IF = 0 mA (EE-SX4161)
Current consumption
ICC
3.2 mA typ., 10 mA max.
VCC = 16 V
870 nm
VCC = 4.5 to 16 V
IFT
2 mA typ., 10 mA max.
VCC = 4.5 to 16 V
Hysteresis
ΔH
15% typ.
VCC = 4.5 to 16 V (see note 1)
Response frequency
f
3kHz min.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2)
Response delay time
tPLH (tPHL)
3 μs typ.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Response delay time
tPHL (tPLH)
20 μs typ.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Emitter
Detector
Peak spectral sensitivi- λP
ty wavelength
LED current when output is OFF
LED current when output is ON
140
EE-SX3161-W11/4161-W11 Photomicrosensor (Transmissive)
3. The following illustrations show the definition of response
delay time. The value in the parentheses applies to the
EE-SX4161.
Note: 1. Hysteresis denotes the difference in forward LED
current value, expressed in percentage, calculated
from the respective forward LED currents when the
photo IC in turned from ON to OFF and when the
photo IC in turned from OFF to ON.
Input
2. The value of the response frequency is measured
by rotating the disk as shown below.
Input
Output
Output
2.1 mm
0.5 mm
EE-SX3161
EE-SX4161
Disk
0.5 mm
■ Engineering Data
Note: The values in the parentheses apply to the EE-SX4161.
LED current IFT (mA)
VCC = 5 V
RL = 330 Ω
2.0
IFT OFF (IFT ON)
1.5
1.0
IFT ON (IFT OFF)
IF
ICC
VCC
0.5
RL
OUT
VOUT
GND
0
-60
-40
-20
0
20
40
60
80
Ta = 70°C
Current consumption Icc (mA)
GND
1.5
1.0
IFT ON (IFT OFF)
0.5
0
2
4
6
8
Ta = 25°C
VCC = 5 V
IF = 0 mA (15 mA)
25
20
t
tPHL
tPLH
tPHL
t
t
tPLH
tPHL (tPLH)
15
IF
ICC
VCC
RL
OUT
VOUT
10
16
IOL = 16 mA
IOL = 5 mA
Repeat Sensing Position
Characteristics (Typical)
Ta = 25°C
IF = 15 mA
VCC = 5 V
RL = 330 Ω
n = repeat 20 times
ON
(OFF)
d1 = 0.01 mm
Center of optical axis
d
IF
ICC
VCC
RL
OUT
VOUT
GND
GND
5
tPLH (tPHL)
0
14
Ambient temperature Ta (°C)
IF
VOUT
(EE-SX3@@)
VOUT
(EE-SX4@@)
12
VCC = 5 V
IF = 0 mA (15 mA)
40
30
10
Low-level Output Voltage vs.
Ambient Temperature Characteristics (Typical)
Response Delay Time vs. Forward
Current (Typical)
Response delay time tPHL, tPLH (μs)
Supply voltage VCC (V)
VCC
OUT
VOUT
Supply voltage VCC (V)
Low-level Output Voltage vs.
Output Current (Typical)
VCC = 5 V
RL = 330 Ω
Ta = 25°C
ICC
RL
Forward voltage VF (V)
35
Ta = 25°C
RL = 1 kΩ
IFT OFF (IFT ON)
Output current IC (mA)
Current Consumption vs. Supply
Voltage (Typical)
IF
2.0
0
Ambient temperature Ta (°C)
Ta = 25°C
IF = 0 mA (15 mA)
LED current IFT (mA)
Ta = −30°C
Ta = 25°C
Low level output voltage VOL (V)
2.5
2.5
Low level output voltage VOL (V)
LED Current vs. Ambient Temperature Characteristics (Typical)
LED Current vs. Supply Voltage
(Typical)
Output transistor
Ambient temperature Ta (°C)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Forward current IF (mA)
Forward current IF (mA)
Output allowable dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
0
5
10
15
Forward current IF (mA)
OFF
(ON)
20
-0.4 -0.3 -0.2 -0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
Distance d (mm)
EE-SX3161-W11/4161-W11 Photomicrosensor (Transmissive)
141
Photomicrosensor (Transmissive)
EE-SX1088-W11
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• General-purpose model with a 3.4-mm-wide slot.
• Pre-wired Sensors (AWG28).
• Solder-less lead wire connection to increase reliability.
25±0.2
Two, R1
19±0.15
Optical axis
■ Absolute Maximum Ratings (Ta = 25°C)
6±0.2 5±0.2
Item
Two, C2
Four, C0.3
Emitter
Two, 3.2±0.2 dia. holes
12.8±0.2
3.4±0.2
0.5±0.1
Sensing window
B
0.5±0.1
A
Optical axis
Detector
10±0.2
7.2±0.2
8.4±0.1
6.5±0.1
3.1
2.5±0.1
610MIN
E
C
3.55
Cross section B-B
11.6±0.2
B
A
K 4 A
Four, Wires UL1061,
AWG#28
Cross section A-A
Ambient temperature
Internal Circuit
A
E
K
C
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 80°C
Storage
Tstg
–25°C to 85°C
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. If you mount the Sensor with screws, use M3 screws, spring
washers, and flat washers and use a tightening torque of 0.5
N·m max.
4. You should use the product in the condition without any
stress on the cable.
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Tolerance
3 mm max.
±0.3
Terminal No.
Name
A
Anode
3 < mm ≤ 6
±0.375
K
C
Cathode
Collector
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
E
Emitter
18 < mm ≤ 30
±0.65
Rated value
IF
Detector
Emitter
8.4±0.1
6.5±0.1
Symbol
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.15 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
142
EE-SX1088-W11 Photomicrosensor (Transmissive)
■ Engineering Data
Ta = 25°C
VCE = 10 V
Ta = 25°C
Ta = 70°C
Forward voltage VF (V)
Ambient temperature Ta (°C)
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
IF = 20 mA
VCE = 5 V
VCE = 10 V
0 lx
Ambient temperature Ta (°C)
Response Time vs. Load Resistance Characteristics (Typical)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
120
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of
optical axis)
80
d
60
40
20
0
0
0.25
0.5
0.75
Distance d (mm)
1.0
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
Relative light current IL (%)
Relative light current IL (%)
120
VCC = 5 V
Ta = 25°C
(Center of optical axis)
IF = 50 mA
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Dark current ID (nA)
Light current IL (mA)
Ta = 25°C
Forward current IF (mA)
Relative Light Current vs.
Ambient Temperature Characteristics (Typical)
Relative light current IL (%)
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Light current IL (mA)
PC
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
80
d
60
40
20
0
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1088-W11 Photomicrosensor (Transmissive)
143
Photomicrosensor (Transmissive)
EE-SX3088-W11/4088-W11
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• General-purpose model with a 3.4-mm-wide slot.
• Light-receiving element and amplification circuits contained in one
chip.
• Can use a power supply voltage of 4.5 to 16 V.
• Connects directly to C-MOS or TTL.
• Dark-ON Sensor: EE-SX3088-W11
• Light-ON Sensor: EE-SX4088-W11
• Pre-wired Sensors (AWG28).
• Solder-less lead wire connection to increase reliability.
25±0.2
Two, R1
19±0.15
Optical axis
6±0.2 5±0.2
Two, 3.2±0.2 dia. holes
Four, C0.3
Two, C2
12.8±0.2
3.4±0.2
Emitter
0.5±0.1
Sensing window
B
Detector
0.5±0.1
A
Optical axis
10±0.2
7.2±0.2
8.4±0.1
6.5±0.1
■ Absolute Maximum Ratings (Ta = 25°C)
8.4±0.1
6.5±0.1
3.1
Item
Emitter
2.5±0.1
G
O
Cross section B-B
4
K
A
Four, Wires UL1061,
Cross section A-A
AWG#28
3.55
11.6±0.2
B
A
Detector
Internal Circuit
A
K
50 mA
(see note 1)
Reverse voltage
VR
4V
Power supply voltage
VCC
16 V
Output voltage
VOUT
28 V
G
Output current
IOUT
16 mA
O
Permissible output POUT
dissipation
250 mW
(see note 1)
Operating
Topr
–25°C to 75°C
Storage
Tstg
–25°C to 85°C
V
Unless otherwise specified, the
tolerances are as shown below.
Name
Dimensions
Ambient temperature
Tolerance
A
K
Anode
Cathode
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
V
Power supply
(Vcc)
6 < mm ≤ 10
±0.45
Output (OUT)
Ground (GND)
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
O
G
Rated value
IF
610MIN
V
Terminal No.
Symbol
Forward current
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. If you mount the Sensor with screws, use M3 screws, spring
washers, and flat washers and use a tightening torque of 0.5
N·m max.
3. You should use the product in the condition without any
stress on the cable.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 20 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm
IF = 20 mA
Low-level output voltage
VOL
0.12 V typ., 0.4 V max.
VCC = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA (EE-SX3088),
IF = 5 mA (EE-SX4088)
High-level output voltage
VOH
15 V min.
VCC = 16 V, RL = 1 kΩ, IF = 5 mA (EE-SX3088),
IF = 0 mA (EE-SX4088)
Current consumption
ICC
3.2 mA typ., 10 mA max.
VCC = 16 V
870 nm
VCC = 4.5 to 16 V
IFT
2 mA typ., 5 mA max.
VCC = 4.5 to 16 V
Hysteresis
ΔH
15% typ.
VCC = 4.5 to 16 V (see note 1)
Response frequency
f
3kHz min.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2)
Response delay time
tPLH (tPHL)
3 μs typ.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Response delay time
tPHL (tPLH)
20 μs typ.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Emitter
Detector
Peak spectral sensitivi- λP
ty wavelength
LED current when output is OFF
LED current when output is ON
144
EE-SX3088-W11/4088-W11 Photomicrosensor (Transmissive)
3. The following illustrations show the definition of response
delay time. The value in the parentheses applies to the EESX4088.
Note: 1. Hysteresis denotes the difference in forward LED
current value, expressed in percentage, calculated
from the respective forward LED currents when the
photo IC in turned from ON to OFF and when the
photo IC in turned from OFF to ON.
Input
2. The value of the response frequency is measured
by rotating the disk as shown below.
Output
2.1 mm
0.5 mm
Input
Output
EE-SX3088
EE-SX4088
Disk
0.5 mm
■ Engineering Data
Note: The values in the parentheses apply to the EE-SX4088.
IFT OFF (IFT ON)
IFT ON (IFT OFF)
LED current IFT (mA)
Forward current IF (mA)
Low-level Output Voltage vs.
Output Current (Typical)
IFT ON (IFT OFF)
Supply voltage VCC (V)
Low-level Output Voltage vs.
Ambient Temperature Characteristics (Typical)
Ta = 25°C
VCC = 5 V
IF = 0 mA (15 mA)
Response Delay Time vs. Forward
Current (Typical)
Response delay time tPHL, tPLH (μs)
Current consumption Icc (mA)
IFT OFF (IFT ON)
VCC = 5 V
IF = 0 mA (15 mA)
IOL = 16 mA
IOL = 5 mA
Ambient temperature Ta (°C)
Output current IC (mA)
Current Consumption vs. Supply
Voltage (Typical)
Supply voltage VCC (V)
Ta = 70°C
Forward voltage VF (V)
Ambient temperature Ta (°C)
Ta = 25°C
IF = 0 mA (15 mA)
Ta = 25°C
RL = 1 kΩ
Low level output voltage VOL (V)
LED current IFT (mA)
VCC = 5 V
RL = 330 Ω
LED Current vs. Supply Voltage
(Typical)
Ta = −30°C
Ta = 25°C
Low level output voltage VOL (V)
LED Current vs. Ambient Temperature Characteristics (Typical)
Forward Current vs. Forward
Voltage Characteristics (Typical)
VCC = 5 V
RL = 330 Ω
Ta = 25°C
VOUT
(EE-SX3@@)
VOUT
(EE-SX4@@)
Repeat Sensing Position
Characteristics (Typical)
Output transistor
Ambient temperature Ta (°C)
Output allowable dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
Ta = 25°C
IF = 15 mA
VCC = 5 V
RL = 330 Ω
n = repeat 20 times
ON
(OFF)
d1 = 0.01 mm
Center of optical axis
d
OFF
(ON)
-0.4 -0.3 -0.2 -0.1
Forward current IF (mA)
0
0.1
0.2
0.3
0.4
0.5
0.6
Distance d (mm)
EE-SX3088-W11/4088-W11 Photomicrosensor (Transmissive)
145
Photomicrosensor (Transmissive)
EE-SX1096-W11
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Pre-wired Sensors (AWG28).
• Solder-less lead wire connection to increase reliability.
• With a horizontal aperture.
25±0.2
Two, R1
19±0.15
Optical axis
■ Absolute Maximum Ratings (Ta = 25°C)
6±0.2 5±0.2
Item
Two, C2
Four, C0.3
Two, 3.2±0.2 dia. holes
Emitter
12.6±0.2
3.4±0.2
Emitter
Sensing
window
B
2.1±0.15
0.5±0.1
A
Optical axis
2.1±0.15
Detector
0.5±0.1
3.1
2.5±0.1
610MIN
C
3.55
11.6±0.2
Cross section B-B
B
K 4 A
Four, Wires UL1061,
AWG#28
Cross section A-A
A
Ambient temperature
Internal Circuit
A
E
K
Unless otherwise specified, the
tolerances are as shown below.
C
Dimensions
±0.3
Terminal No.
Name
A
Anode
K
Cathode
C
Collector
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
E
18 < mm ≤ 30
±0.65
Emitter
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 80°C
Storage
Tstg
–25°C to 85°C
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. If you mount the Sensor with screws, use M3 screws, spring
washers, and flat washers and use a tightening torque of 0.5
N·m max.
4. You should use the product in the condition without any
stress on the cable.
Tolerance
3 mm max.
Rated value
IF
Detector
10±0.2
7.2±0.2
E
Symbol
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Forward voltage
Symbol
Value
VF
1.2 V typ., 1.5 V max.
Condition
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
146
EE-SX1096-W11 Photomicrosensor (Transmissive)
■ Engineering Data
Light current IL (mA)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Relative Light Current vs.
Ambient Temperature Characteristics (Typical)
IF = 20 mA
IF = 10 mA
Dark current ID (nA)
IF = 30 mA
Collector−Emitter voltage VCE (V)
Response time tr, tf (μs)
VCC = 5 V
Ta = 25°C
Ambient temperature Ta (°C)
120
80
d
60
40
20
−0.5
−0.25
0
0.25
0.5
Distance d (mm)
0.75
1.0
Sensing Position Characteristics
(Typical)
120
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
0
Load resistance RL (kΩ)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
Response Time vs. Load Resistance Characteristics (Typical)
VCE = 10 V
0 lx
Relative light current IL (%)
IF = 40 mA
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
Relative light current IL (%)
Light current IL (mA)
Ta = 25°C
IF = 50 mA
Forward current IF (mA)
Forward voltage VF (V)
(Center of optical axis)
PC
Light Current vs. Forward Current
Characteristics (Typical)
Ta = 25°C
VCE = 10 V
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
100
80
d
60
40
20
0
−2.0
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1096-W11 Photomicrosensor (Transmissive)
147
Photomicrosensor (Transmissive)
EE-SX3096-W11/4096-W11
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Light-receiving element and amplification circuits contained in one
chip.
• Can use a power supply voltage of 4.5 to 16 V.
• Connects directly to C-MOS or TTL.
• Dark-ON Sensor: EE-SX3096-W11
• Light-ON Sensor: EE-SX4096-W11
• Pre-wired Sensors (AWG28).
• Solder-less lead wire connection to increase reliability.
• With a horizontal aperture.
25±0.2
Two, R1
19±0.15
Optical axis
6±0.2 5±0.2
Two, 3.2±0.2 dia. holes
Emitter
B
2.1±0.15
Sensing
window
Two, C2
Four, C0.3
12.6±0.2
3.4±0.2
Detector
A
Optical axis
2.1±0.15
■ Absolute Maximum Ratings (Ta = 25°C)
10±0.2
0.5±0.1
7.2±0.2
0.5±0.1
3.1
Item
Emitter
2.5±0.1
Symbol
IF
50 mA
(see note 1)
Reverse voltage
VR
4V
Power supply voltage
VCC
16 V
610MIN
G
O
V
K
A
4
Four, Wires UL1061,
AWG#28
Cross section A-A
3.55
Cross section B-B
11.6±0.2
B
Detector
A
Internal Circuit
A
K
Output voltage
VOUT
28 V
G
Output current
IOUT
16 mA
O
Permissible output POUT
dissipation
250 mW
(see note 1)
Operating
Topr
–25°C to 75°C
Storage
Tstg
–25°C to 85°C
V
Terminal No.
Unless otherwise specified, the
tolerances are as shown below.
Name
Dimensions
Ambient temperature
Tolerance
A
K
Anode
Cathode
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
V
Power supply
(Vcc)
6 < mm ≤ 10
±0.45
Output (OUT)
Ground (GND)
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
O
G
Rated value
Forward current
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. If you mount the Sensor with screws, use M3 screws, spring
washers, and flat washers and use a tightening torque of 0.5
N·m max.
3. You should use the product in the condition without any
stress on the cable.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 20 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm
IF = 20 mA
Low-level output voltage
VOL
0.12 V typ., 0.4 V max.
VCC = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA (EE-SX3096),
IF = 5 mA (EE-SX4096)
High-level output voltage
VOH
15 V min.
VCC = 16 V, RL = 1 kΩ, IF = 5 mA (EE-SX3096),
IF = 0 mA (EE-SX4096)
Current consumption
ICC
3.2 mA typ., 10 mA max.
VCC = 16 V
870 nm
VCC = 4.5 to 16 V
IFT
2 mA typ., 5 mA max.
VCC = 4.5 to 16 V
Hysteresis
ΔH
15% typ.
VCC = 4.5 to 16 V (see note 1)
Response frequency
f
3kHz min.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2)
Response delay time
tPLH (tPHL)
3 μs typ.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Response delay time
tPHL (tPLH)
20 μs typ.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Emitter
Detector
Peak spectral sensitivi- λP
ty wavelength
LED current when output is OFF
LED current when output is ON
148
EE-SX3096-W11/4096-W11 Photomicrosensor (Transmissive)
Note: 1. Hysteresis denotes the difference in
forward LED current value, expressed in percentage,
calculated from the respective forward LED currents
when the photo IC in turned from ON to OFF and
when the photo IC in turned from OFF to ON.
3. The following illustrations show the definition of response
delay time. The value in the parentheses applies to the
EE-SX4096.
Input
2. The value of the response frequency is
measured by rotating the disk as shown below.
Output
2.1 mm
0.5 mm
Input
Output
EE-SX3096
EE-SX4096
Disk
0.5 mm
■ Engineering Data
Note: The values in the parentheses apply to the EE-SX4096.
IFT OFF (IFT ON)
IFT ON (IFT OFF)
LED current IFT (mA)
Forward current IF (mA)
Low-level Output Voltage vs.
Output Current (Typical)
IFT ON (IFT OFF)
Supply voltage VCC (V)
Low-level Output Voltage vs.
Ambient Temperature Characteristics (Typical)
Ta = 25°C
VCC = 5 V
IF = 0 mA (15 mA)
Response Delay Time vs. Forward
Current (Typical)
Response delay time tPHL, tPLH (μs)
Current consumption Icc (mA)
IFT OFF (IFT ON)
VCC = 5 V
IF = 0 mA (15 mA)
IOL = 16 mA
IOL = 5 mA
Ambient temperature Ta (°C)
Output current IC (mA)
Current Consumption vs. Supply
Voltage (Typical)
Supply voltage VCC (V)
Ta = 70°C
Forward voltage VF (V)
Ambient temperature Ta (°C)
Ta = 25°C
IF = 0 mA (15 mA)
Ta = 25°C
RL = 1 kΩ
Low level output voltage VOL (V)
LED current IFT (mA)
VCC = 5 V
RL = 330 Ω
LED Current vs. Supply Voltage
(Typical)
Ta = −30°C
Ta = 25°C
Low level output voltage VOL (V)
LED Current vs. Ambient Temperature Characteristics (Typical)
Forward Current vs. Forward
Voltage Characteristics (Typical)
VCC = 5 V
RL = 330 Ω
Ta = 25°C
VOUT
(EE-SX3@@)
VOUT
(EE-SX4@@)
Repeat Sensing Position
Characteristics (Typical)
Output transistor
Ambient temperature Ta (°C)
Output allowable dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
Ta = 25°C
IF = 15 mA
VCC = 5 V
RL = 330 Ω
n = repeat 20 times
ON
(OFF)
d1 = 0.01 mm
Center of optical axis
d
OFF
(ON)
-0.4 -0.3 -0.2 -0.1
Forward current IF (mA)
0
0.1
0.2
0.3
0.4
0.5
0.6
Distance d (mm)
EE-SX3096-W11/4096-W11 Photomicrosensor (Transmissive)
149
Photomicrosensor (Transmissive)
EE-SX1160-W11
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Wide model with a 9.5-mm-wide slot.
• Pre-wired Sensors (AWG28).
• Solder-less lead wire connection to increase reliability.
31.75±0.2
Four, R1
25.4±0.15
Optical axis
■ Absolute Maximum Ratings (Ta = 25°C)
6±0.2 5.2±0.2
Emitter
Detector
18.9±0.2
Emitter
Item
Two, 3.2±0.15 dia. holes
Four, C0.3
Symbol
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
5V
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 80°C
Storage
Tstg
–25°C to 85°C
9.5±0.2
Sensing
window
1.1±0.1
13.9±0.1
12±0.1
B
A
Optical axis
15.5±0.2
12.7±0.2
1.1±0.1
13.9±0.1
12±0.1
3.2±0.1
E
Two, C0.8
Detector
610MIN.
C
B
K
A
Cross section B-B
A
Cross section A-A
Ambient temperature
Internal Circuit
A
E
K
C
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. If you mount the Sensor with screws, use M3 screws, and
flat washers and use a tightening torque of 0.5 N·m max.
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Tolerance
3 mm max.
±0.3
Terminal No.
Name
A
Anode
3 < mm ≤ 6
±0.375
K
C
Cathode
Collector
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
E
Emitter
18 < mm ≤ 30
±0.65
Rated value
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
920 nm typ.
IF = 20 mA
Light current
IL
3.5 mA min., 16 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.15 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Detector
150
EE-SX1160-W11 Photomicrosensor (Transmissive)
■ Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
20
100
40
30
50
20
10
0
-40
-20
0
20
40
60
Ta = 25°C
Ta = 70°C
IF = 40 mA
14
IF = 30 mA
10
IF = 20 mA
8
6
IF = 10 mA
4
6
4
0
10
20
30
40
50
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
VCE = 10 V
0 lx
Dark current ID (nA)
IF = 50 mA
12
8
IF = 20 mA
VCE = 5 V
Relative light current IL (%)
Ta = 25°C
22
16
10
Forward current IF (mA)
Relative Light Current vs.
Ambient Temperature Characteristics (Typical)
26
18
12
Forward voltage VF (V)
Voltage Characteristics (Typical)
20
14
0
Ambient temperature Ta (°C)
24
16
2
0
100
80
Ta = 25°C
VCE = 10 V
18
Light current IL (mA)
PC
Forward current IF (mA)
50
Collector dissipation PC (mW)
IF
Light current IL (mA)
Light Current vs. Forward Current
Characteristics (Typical)
150
60
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
2
1
2
3
4
5
6
7
8
9
10
Ambient temperature Ta (°C)
Response Time vs. Load Resistance Characteristics (Typical)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
120
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of
optical axis)
80
d
60
40
20
0
-2.5 -2.0 -1.5 -1.0 -0.5
0
0.5
1.0
Distance d (mm)
1.5
2.0
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
Relative light current IL (%)
Relative light current IL (%)
120
VCC = 5 V
Ta = 25°C
2.5
(Center of optical axis)
0
0
80
d
60
40
20
0
-2.5 -2.0 -1.5 -1.0 -0.5
0
0.5
1.0
1.5
2.0
2.5
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1160-W11 Photomicrosensor (Transmissive)
151
Photomicrosensor (Transmissive)
EE-SX3160-W11/4160-W11
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Wide model with a 9.5-mm-wide slot.
• Light-receiving element and amplification circuits contained in one
chip.
• Can use a power supply voltage of 4.5 to 16 V.
• Connects directly to C-MOS or TTL.
• Dark-ON Sensor: EE-SX3160-W11
• Light-ON Sensor: EE-SX4160-W11
• Pre-wired Sensors (AWG28).
• Solder-less lead wire connection to increase reliability.
31.75±0.2
Four, R1
25.4±0.15
Optical axis
6±0.2 5.2±0.2
Four, C0.3 Two, 3.2±0.15 dia. holes
Emitter
Sensing
window
9.5±0.2
B
13.9±0.1
12±0.1
Detector
18.9±0.2
1.1±0.1
Optical
axis
A
15.5±0.2
12.7±0.2
Two, C0.8
1.1±0.1
■ Absolute Maximum Ratings (Ta = 25°C)
Item
13.9±0.1
12±0.1
Emitter
3.2±0.1
610MIN.
V
B
G
O
Cross section B-B
K
A
A
Detector
Cross section A-A
Internal Circuit
A
G
O
K
V
Terminal No.
Dimensions
Ambient temperature
Rated value
50 mA
(see note 1)
Reverse voltage
VR
4V
Power supply voltage
VCC
16 V
Output voltage
VOUT
28 V
Output current
IOUT
16 mA
Permissible output POUT
dissipation
Unless otherwise specified, the
tolerances are as shown below.
Name
Symbol
IF
Forward current
250 mW
(see note 1)
Operating
Topr
–25°C to 75°C
Storage
Tstg
–25°C to 85°C
Tolerance
A
K
Anode
Cathode
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
V
Power supply
(Vcc)
6 < mm ≤ 10
±0.45
O
G
Output (OUT)
Ground (GND)
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. If you mount the Sensor with screws, use M3 screws, and
flat washers and use a tightening torque of 0.5 N·m max.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 20 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
920 nm
IF = 20 mA
Low-level output voltage
VOL
0.12 V typ., 0.4 V max.
VCC = 4.5 to 16 V, IOL = 16 mA, IF = 0 mA (EE-SX3160),
IF = 10 mA (EE-SX4160)
High-level output voltage
VOH
15 V min.
VCC = 16 V, RL = 1 kΩ, IF = 10 mA (EE-SX3160),
IF = 0 mA (EE-SX4160)
Current consumption
ICC
3.2 mA typ., 10 mA max.
VCC = 16 V
870 nm
VCC = 4.5 to 16 V
IFT
2 mA typ., 10 mA max.
VCC = 4.5 to 16 V
Hysteresis
ΔH
15% typ.
VCC = 4.5 to 16 V (see note 1)
Response frequency
f
3kHz min.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 2)
Response delay time
tPLH (tPHL)
3 μs typ.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Response delay time
tPHL (tPLH)
20 μs typ.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA (see note 3)
Emitter
Detector
Peak spectral sensitivi- λP
ty wavelength
LED current when output is OFF
LED current when output is ON
152
EE-SX3160-W11/4160-W11 Photomicrosensor (Transmissive)
3. The following illustrations show the definition of response
delay time. The value in the parentheses applies to the
EE-SX4160.
Note: 1. Hysteresis denotes the difference in forward LED
current value, expressed in percentage, calculated
from the respective forward LED currents when the
photo IC in turned from ON to OFF and when the
photo IC in turned from OFF to ON.
Input
2. The value of the response frequency is measured
by rotating the disk as shown below.
Input
Output
Output
2.1 mm
0.5 mm
EE-SX3160
EE-SX4160
Disk
0.5 mm
■ Engineering Data
Note: The values in the parentheses apply to the EE-SX4160.
LED current IFT (mA)
VCC = 5 V
RL = 330 Ω
2.0
IFT OFF (IFT ON)
1.5
1.0
IFT ON (IFT OFF)
IF
ICC
VCC
0.5
RL
OUT
VOUT
GND
0
-60
-40
-20
0
20
40
60
80
Ta = 70°C
Current consumption Icc (mA)
GND
1.5
1.0
IFT ON (IFT OFF)
0.5
0
2
4
6
8
IF
25
20
t
tPHL
tPLH
tPHL
t
t
tPLH
tPHL (tPLH)
15
IF
ICC
VCC
RL
OUT
VOUT
10
16
IOL = 16 mA
IOL = 5 mA
Repeat Sensing Position
Characteristics (Typical)
Ta = 25°C
IF = 15 mA
VCC = 5 V
RL = 330 Ω
n = repeat 20 times
ON
(OFF)
d1 = 0.01 mm
Center of optical axis
d
IF
ICC
VCC
RL
OUT
VOUT
GND
GND
5
tPLH (tPHL)
0
14
VCC = 5 V
IF = 0 mA (15 mA)
40
VOUT
(EE-SX3@@)
VOUT
(EE-SX4@@)
12
Ambient temperature Ta (°C)
Response Delay Time vs. Forward
Current (Typical)
30
10
Low-level Output Voltage vs.
Ambient Temperature Characteristics (Typical)
Ta = 25°C
VCC = 5 V
IF = 0 mA (15 mA)
VCC = 5 V
RL = 330 Ω
Ta = 25°C
OUT
VOUT
Supply voltage VCC (V)
Low-level Output Voltage vs.
Output Current (Typical)
Response delay time tPHL, tPLH (μs)
Supply voltage VCC (V)
VCC
RL
Forward voltage VF (V)
35
ICC
IFT OFF (IFT ON)
Output current IC (mA)
Current Consumption vs. Supply
Voltage (Typical)
Ta = 25°C
RL = 1 kΩ
IF
2.0
0
Ambient temperature Ta (°C)
Ta = 25°C
IF = 0 mA (15 mA)
LED current IFT (mA)
Ta = −30°C
Ta = 25°C
Low level output voltage VOL (V)
2.5
2.5
Low level output voltage VOL (V)
LED Current vs. Ambient Temperature Characteristics (Typical)
LED Current vs. Supply Voltage
(Typical)
Output transistor
Ambient temperature Ta (°C)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Forward current IF (mA)
Forward current IF (mA)
Output allowable dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
0
5
10
15
Forward current IF (mA)
OFF
(ON)
20
-0.4 -0.3 -0.2 -0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
Distance d (mm)
EE-SX3160-W11/4160-W11 Photomicrosensor (Transmissive)
153
Photomicrosensor (Reflective)
EE-SY1200
Be sure to read Precautions on page 24.
■ Dimensions
Detector center
■ Features
Emitter center
1.9
(0.7)
(1)
(0.8)
(0.8)
3.2
Note:
Unless otherwise specified tolerances are ±0.15.
No burrs dimensions are included in
outline dimensions.
The burrs dimensions are 0.15 MAX.
Diagonal line indicate the region is
part Au plating area.
Recommended Soldering Pattern
2-1
2-1.7
1.2
Item
IF
50*1
mA
Pulse forward
current
IFP
500*2
mA
Reverse voltage
VR
4
V
Collector-Emitter
voltage
VCEO
30
V
Emitter-Collector
voltage
VECO
5
V
Collector current
IC
20
mA
Collector dissipation
PC
50*1
mW
Operating temperature
Topr
−25 to +85
°C
Storage temperature
Tstg
−40 to +100
°C
Reflow soldering temperature
Tsol
240*3
°C
2-0.65
Name
A
Anode
K
Cathode
C
Collector
E
Emitter
Note:1. The shaded portion in the
above figure may cause
shorting. Do not wire in
this portion.
2. The dimensional tolerance
for the recommended soldering pattern is ±0.1 mm.
Detector
Internal Circuit
C
A
E
K
Symbol Rated value Unit
Forward current
2-0.65
2-0.45
A
Terminal No.
Emitter
K
0.7
C
■ Absolute Maximum Ratings
(Ta=25°C)
2-1
1.1
E
• Ultra-compact model.
• PCB surface mounting type.
• High S/N ratio
(High light current / Low leakage current)
• Recommended sensing distance = 1.0 to 4.0 mm
*1 Refer to the temperature rating chart if the ambient temperature
exceeds 25°C.
*2 The pulse width is 10 μs maximum with a frequency of 100 Hz.
*3 Complete soldering within 10 seconds for reflow soldering.
■ Electrical and Optical Characteristics (Ta=25°C)
Item
Emitter
Symbol
Value
Unit
MIN.
TYP.
MAX.
Condition
Forward voltage
VF
---
1.2
1.4
V
IF = 20 mA
Reverse current
IR
---
---
10
μA
VR = 4 V
λP
---
940
---
nm
---
Light current 1
I L1
200
---
1000
μA
Light current 2
I L2
150
---
---
μA
Peak emission wavelength
ID
---
2
200
nA
IF = 10 mA, VCE = 2 V, Aluminum-deposited
surface, d = 4 mm*1
IF = 4 mA, VCE = 2 V, Aluminum-deposited
surface, d = 1 mm*1
VCE = 10 V, 0 lx
Leakage current 1
I LEAK1
---
---
500
nA
IF = 10 mA, VCE = 2 V, with no reflection*2
Leakage current 2
I LEAK2
---
---
200
nA
IF = 4 mA, VCE = 2 V, with no reflection*2
VCE (sat)
---
---
---
V
---
λP
---
850
---
nm
---
Rising time
tr
---
30
---
μs
VCC = 2 V, RL = 1 kΩ, IL = 100 μA, d = 1 mm*1
Falling time
tf
---
30
---
μs
VCC = 2 V, RL = 1 kΩ, IL = 100 μA, d = 1 mm*1
Detector
Dark current
Collector-Emitter saturated
voltage
Peak spectral sensitivity
wavelength
*1. The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
*2. Depends on the installed condition of the Photomicrosensor, the detector may receive the sensor's LED light and/or the external light which
is reflected from surroundings of the Photomicrosensor and /or the background object.
Please confirm the condition of the Photomicrosensor by actual intended application prior to the mass production use.
154
EE-SY1200 Photomicrosensor (Reflective)
■ Engineering Data
Forward Current vs. Forward Voltage
Characteristics (Typical)
Forward current IF (mA)
50
40
30
20
PC
-20
0
20
Light current IL (mA)
Light Current vs. Collector-Emitter
Voltage Characteristics (Typical)
1,600
IF=10mA, d=1mm
1,400
Ta=-30°C
Ta=+25°C
40
Ta=25°C
2,500
VCE=2V
d=1mm
2,000
Ta=+70°C
30
1,500
20
1,000
10
500
0
40
60
80
100
Ambient temperature Ta (°C)
1,200
IF=7mA, d=1mm
1,000
IF=15mA, d=4mm
800
0
0.2
0.4
0.6
0.8
1
0
1.2 1.4 1.6 1.8
Forward voltage VF (V)
Relative Light Current vs. Ambient
Temperature Characteristics (Typical)
Relative light current IL (%)
0
50
3,000
IF
10
-40
60
120
IF=10mA
VCE=2V
110
100
VCE=2V
d=4mm
0
5
10
15
20
Forward current IF (mA)
Dark Current vs. Ambient Temperature
Characteristics (Typical)
Dark current ID (nA)
Forward current IF (mA)
Collector dissipation PC (mW)
60
Light Current vs. Forward Current
Characteristics (Typical)
Light current IL (μA)
Forward Current vs. Collector
Dissipation Temperature Rating
10,000
1,000
100
10
90
1
IF=10mA, d=4mm
600
80
IF=4mA, d=1mm
400
0.1
IF=7mA, d=4mm
IF=2mA, d=1mm
200
70
0.01
IF=4mA, d=4mm
0
0
2
4
IF=2mA, d=4mm
6
8
10
Collector-Emitter voltage VCE (V)
-20
0
20
40
60
80
100
Ambient temperature Ta (°C)
Sensing Distance Characteristics
(Typical)
0.001
-30 -20 -10
tf
100
10 20 30 40 50 60 70 80 90
Ambient temperature Ta (°C)
120
Aluminum-deposited surface
90
d
80
IF=4mA, 10mA
VCE=10V
70
60
50
Relative light current IL (%)
tr
1,000
0
Sensing Position Characteristics
(Typical)
100
10,000
Relative light current IL (%)
Response time tr,tf (μs)
Response Time vs. Load Resistance
Characteristics (Typical)
60
-40
White
100
Black
d
L
-
0
+
80
IF=10mA
VCE=2V
d=4mm
60
40
40
30
10
20
IF=4mA
VCE=2V
d=1mm
20
10
1
0.1
1
10
100
Load resistance RL (kΩ)
Relative light current IL (%)
Sensing Position Characteristics
(Typical)
120
0
0.5
1
1.5
2
2.5
3
3.5 4
4.5 5
Distance d (mm)
Response Time Measurement
Circuit
Black
0
d
-
0
0
+
-4
-3
-2
-1
0
1
2
3
4
Card moving distance L (mm)
Light Current Measurement Setup
Diagram
Aluminum-deposited surface
t
80
tr
tf
60
IF=10mA
VCE=2V
d=4mm
Input
IF=4mA
VCE=2V
d=1mm
20
0
-6
-5
t
90%
10%
Output
L
40
0
-6
Input
White
100
0
-5
-4
-3
-2
IL
d
Glass
VCC
Output
Sensor
RL
-1
0
1
2
3
4
Card moving distance L (mm)
EE-SY1200 Photomicrosensor (Reflective)
155
■ Tape and Reel
Reel Dimension (Unit: mm)
φ13±0.5
φ21±0.8
0.2
0.4
0.6
φ60±1
0.8
0.6
0.4
0.2
0.8
2±0.5
13 +10
180 -30
15.4±1
Tape Dimension (Unit: mm)
4
φ1.5
2
4
1.75
5.5
12
3.45
0.3
1.35
2.15
Part Mounting Direction
• The devices are oriented in the rectangular holes in the carrier tape so that the edge with the LED faces the round feeding holes.
0.2
0.4
0.6
0.8
Tape Quantity
2,000 pcs./reel
156
EE-SY1200 Photomicrosensor (Reflective)
0.8
A
0.6
K
Pull-out direction
0.4
C
0.2
E
■ Precautions to be taken on mounting
Temperature Profile
The reflow soldering can be implemented in two times complying
with the following diagram.
All the temperatures in the product must be within the diagram.
Treatment after Opening
1. Reflow soldering must be done within 48 hours stored at the conditions of humidity 60%RH or less and temperature 5 to 25°C.
2. In case of long time storage after open, please mount at the conditions of humidity 70%RH or less and temperature 5 to 30°C
within 1 week by using dry box or resealing with desiccant in
moisture-proof bag by sealer.
240°C MAX.
Baking before Mounting
Temperature (°C)
1to 4°C/sec
200°C
10 sec MAX.
160°C MAX.
1to 4°C/sec
50 sec MAX.
1to 4°C/sec
In case that it could not carry out the above treatment, it is able to
mount by baking treatment.
However baking treatment shall be limited only 1 time.
Recommended conditions : 60°C, 12 to 24 hours (reeled one)
100°C, 8 to 24 hours (loose one)
120 sec MAX.
Time (sec)
Manual soldering
The manual soldering cannot be applied to the products.
There is a possibility that the housing is deformed and/or Au plating
is peeled off by heat.
Other Notes
The use of infrared lamp causes the temperature at the resin to rise
particularly too high.
All the temperatures in the product must be within the above
diagram.
Do not immerse the resin part into the solder.
Even if within the above temperature diagram, there is a possibility
that the gold wire in the products is broken in case that the
deformation of PCB gives the stress to the product terminals.
Please confirm the conditions of the reflow soldering fully by actual
solder reflow machine prior to the mass production use.
■ Storage and Handling after Opening
Storage Conditions
In order to avoid the absorption of moisture, the products shall be
stored in a dry box with desiccant or in the following conditions.
Storage temp. : 5 to 30°C
Storage humidity : 70%RH or less
EE-SY1200 Photomicrosensor (Reflective)
157
Photomicrosensor (Reflective)
EE-SY171
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• 3-mm-tall, thin model
• Recommended sensing distance = 3.5 mm
Two, 1.2 dia.
Two, 2 dia.
Anode mark
■ Absolute Maximum Ratings (Ta = 25°C)
Four, 0.5
Item
Emitter
Detector
0° to 30°
Four, 0.25
Ambient temperature
Internal Circuit
A
C
K
E
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
±0.3
3 < mm ≤ 6
6 < mm ≤ 10
±0.375
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–40°C to 85°C
Storage
Tstg
–40°C to 85°C
Tsol
260°C
(see note 3)
Soldering temperature
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
3 mm max.
Symbol
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
50 μA min., 500 μA max.
IF = 20 mA, VCE = 10 V
White paper with a reflection ratio of 90%,
d = 3.5 mm (see note)
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
2 μA max.
IF = 20 mA, VCE = 10 V with no reflection
Collector–Emitter saturated
voltage
VCE (sat)
---
---
850 nm typ.
VCE = 10 V
Peak spectral sensitivity wave- λP
length
Rising time
tr
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Falling time
tf
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
158
EE-SY171 Photomicrosensor (Reflective)
■ Engineering Data
Light Current vs. Forward Current
Characteristics (Typical)
Ambient temperature Ta (°C)
Forward current IF (mA)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Ta = 25°C
IF = 20 mA
VCE = 10 V
Sensing object: White
paper with a reflection
factor of 90%
Sensing Position Characteristics
(Typical)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Sensing object: White paper
with a reflection factor of 90%
d1 = 3 mm
d1 = 4 mm
d1 = 5 mm
Distance d2 (mm)
Distance d (mm)
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Response Time vs. Load
Resistance Characteristics
(Typical)
Vcc = 5 V
Ta = 25°C
Load resistance RL (kΩ)
Ambient temperature Ta (°C)
Relative light current IL (%)
Sensing Distance Characteristics
(Typical)
Ta = 25°C
d = 3.5 mm
Sensing object: White
paper with a reflection
factor of 90%
Collector−Emitter voltage VCE (V)
Response time tr, tf (μs)
VCE = 10 V
0lx
Dark Current ID (nA)
Relative light current IL (%)
IF = 20 mA
VCE = 5 V
Ambient temperature Ta (°C)
Light current IL (μA)
Ta = 25°C
VCE = 10 V
d = 3.5 mm
Sensing object:
White paper with a
reflection factor of
90%
Sensing Angle Characteristics
(Typical)
Relative light current IL (%)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light current IL (μA)
Light current IL (μA)
Forward current IF (mA)
Collector dissipation Pc (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
IF = 20 mA
VCE = 10 V
Ta = 25°C
d = 3.5 mm
Sensing object:
White paper with
a reflection factor
of 90%
Angle deviation θ (°)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SY171 Photomicrosensor (Reflective)
159
Photomicrosensor (Reflective)
EE-SY169
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• High-quality model with plastic lenses.
• Highly precise sensing range with a tolerance of ±0.6 mm horizontally and vertically.
• With a red LED sensing dyestuff-type inks.
• Limited reflective model.
• Recommended sensing distance = 4.0 mm
• For lesser LED forward current the EE-SY169B would be a better
choice.
■ Absolute Maximum Ratings (Ta = 25°C)
Item
Surface A
Emitter
1±0.1 dia.
Two, C0.2
1±0.1 dia.
(see note)
(see note)
Detector
Internal Circuit
A
C
K
E
Terminal No.
Name
A
Anode
K
C
E
Cathode
Collector
Emitter
Note: These dimensions are for
the surface A. Other lead
wire pitch dimensions are for
the housing surface.
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Tolerance
3 < mm ≤ 6
6 < mm ≤ 10
10 < mm ≤ 18
±0.3
±0.375
±0.45
±0.55
18 < mm ≤ 30
±0.65
3 mm max.
Ambient temperature
Symbol
Rated value
Forward current
IF
40 mA
(see note 1)
Pulse forward current
IFP
300 mA
(see note 2)
Reverse voltage
VR
3V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
0°C to 70°C
Storage
Tstg
–20°C to 80°C
Tsol
260°C
(see note 3)
Soldering temperature
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
Forward voltage
VF
1.85 V typ., 2.3 V max.
IF = 20 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 3 V
Peak emission wavelength
λP
660 nm typ.
IF = 20 mA
Light current
IL
160 μA min., 2,000 μA max.
IF = 20 mA, VCE = 5 V
White paper with a reflection ratio of 90%,
d = 4 mm (see note)
Dark current
ID
2 nA typ., 200 nA max.
VCE = 5 V, 0 lx
Leakage current
ILEAK
2 μA max.
IF = 20 mA, VCE = 5 V with no reflection
Collector–Emitter saturated
voltage
VCE (sat)
---
---
850 nm typ.
VCE = 5 V
Peak spectral sensitivity wave- λP
length
Rising time
tr
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Falling time
tf
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
160
EE-SY169 Photomicrosensor (Reflective)
■ Engineering Data
d = 4 mm
VCE = 5 V
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Ta = 25°C
IF = 20 mA
VCE = 10 V
Sensing object: White paper
with a reflection factor of 90%
Angle deviation θ (°)
Collector−Emitter voltage VCE (V)
Response Time vs. Load
Resistance Characteristics
(Typical)
Response time tr, tf (μs)
Vcc = 5 V
Ta = 25°C
IF = 20 mA
VCE = 5 V
Ta = 25°C
Sensing object:
White paper with
a reflection factor
of 90%
d1 = 3.5 mm
d1 = 4.0 mm
d1 = 4.5 mm
Direction
Sensor
Load resistance RL (kΩ)
Sensing Position Characteristics
(Typical)
Distance d2 (mm)
Sensing Angle Characteristics
(Typical)
Relative light current IL (%)
Relative light current IL (%)
d = 3 mm
d = 4 mm
d = 5 mm
VCE = 10 V
0lx
Sensing Position Characteristics
(Typical)
Distance d (mm)
Sensing Angle Characteristics
(Typical)
IF = 10 mA
Ambient temperature Ta (°C)
Relative light current IL (%)
Light current IL (μA)
Ta = 25°C
IF = 20 mA
VCE = 10 V
Sensing object:
White paper with a
reflection factor of
90%
IF = 20 mA
Relative light current IL (%)
Ambient temperature Ta (°C)
Sensing Distance Characteristics
(Typical)
IF = 40 mA
IF = 30 mA
Forward current IF (mA)
Dark Current ID (nA)
Relative light current IL (%)
IF = 20 mA
VCE = 5 V
Ta = 25°C
d = 4 mm
Sensing object: White
paper with a reflection
factor of 90%
IF = 5 mA
Ambient temperature Ta (°C)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light current IL (μA)
Light Current vs. Forward Current
Characteristics (Typical)
Light current IL (μA)
Forward current IF (mA)
Collector dissipation Pc (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
Ta = 25°
IF = 20 mA VCE
= 10 V
Sensing object:
White paper with
a reflection fac
tor of 90%
IF = 20 mA
VCE = 5 V
Ta = 25°C
d1 = 4 mm
Sensing object: White
paper with a reflection
factor of 90%
Sensing
d = 0 object
Direction
Sensor
Distance d2 (mm)
Response Time Measurement
Circuit
Input
d = 3 mm
d = 4 mm
d = 5 mm
Output
90 %
10 %
Input
Output
Angle deviation θ (°)
EE-SY169 Photomicrosensor (Reflective)
161
Photomicrosensor (Reflective)
EE-SY169A
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• High-quality model with plastic lenses.
• Highly precise sensing range with a tolerance of ±0.6 mm horizontally and vertically.
• Convergent reflective model with infrared LED.
• Recommended sensing distance = 4.0 mm
■ Absolute Maximum Ratings (Ta = 25°C)
Item
Emitter
Surface A
1±0.1 dia.
Two, C0.2
1±0.1 dia.
Detector
(see note)
(see note)
Internal Circuit
A
C
K
E
Dimensions
Terminal No.
A
K
C
E
Ambient temperature
Note: These dimensions are for the
surface A. Other lead wire
pitch dimensions are for the
housing surface.
Unless otherwise specified, the
tolerances are as shown below.
Name
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
3V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
0°C to 70°C
Storage
Tstg
–20°C to 80°C
Tsol
260°C
(see note 3)
Soldering temperature
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
Anode
Cathode
Collector
Emitter
Symbol
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
Condition
Forward voltage
VF
1.5 V max.
Reverse current
IR
10 μA max.
VR = 4 V
Peak emission wavelength
λP
920 nm typ.
IF = 20 mA
Light current
IL
160 μA min., 2,000 μA max.
IF = 20 mA, VCE = 5 V
White paper with a reflection ratio of
90%, d = 4 mm (see note)
Dark current
ID
2 nA typ., 200 nA max.
VCE = 5 V, 0 lx
Leakage current
ILEAK
2 μA max.
IF = 20 mA, VCE = 5 V with no reflection
---
---
λP
850 nm typ.
VCE = 5 V
Rising time
tr
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Falling time
tf
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Emitter
Detector
Collector–Emitter saturated volt- VCE (sat)
age
Peak spectral sensitivity wavelength
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
162
EE-SY169A Photomicrosensor (Reflective)
IF = 30 mA
■ Engineering Data
d = 4 mm
VCE = 5 V
Ambient temperature Ta (°C)
Sensing object:
White paper
with a reflection
factor of 90%
Sensing object: White paper
with a reflection factor of 90%
Angle deviation θ (°)
IF = 10 mA
Collector−Emitter voltage VCE (V)
Response Time vs. Load
Resistance Characteristics
(Typical)
Response time tr, tf (μs)
Vcc = 5 V
Ta = 25°C
Load resistance RL (kΩ)
Sensing object: White
IF = 20 mA paper with a reflection
factor of 90%
VCE = 5 V
Ta = 25°C
d1 = 3.5 mm
d1 = 4.0 mm
d1 = 4.5 mm
Direction
Sensor
Sensing Position Characteristics
(Typical)
Sensing Angle Characteristics
(Typical)
Ta = 25°
IF = 20 mA VCE
= 10 V
Sensing object:
White paper
with a reflection
factor of 90%
IF = 20 mA
VCE = 5 V
Ta = 25°C
d1 = 4 mm
Sensing object:
White paper with
a reflection factor
of 90%
d=0
Sensing
object
Direction
Sensor
Distance d2 (mm)
Distance d2 (mm)
Relative light current IL (%)
Relative light current IL (%)
d = 3 mm Ta = 25°C
d = 4 mm IF = 20 mA
d = 5 mm VCE = 10 V
VCE = 10 V
0lx
Sensing Position Characteristics
(Typical)
Distance d (mm)
Sensing Angle Characteristics
(Typical)
IF = 20 mA
Relative light current IL (%)
Ta = 25°C
IF = 20 mA
VCE = 10 V
IF = 30 mA
Ambient temperature Ta (°C)
Relative light current IL (%)
Light current IL (μA)
Sensing Distance Characteristics
(Typical)
IF = 40 mA
IF = 5 mA
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Dark Current ID (nA)
Relative light current IL (%)
IF = 20 mA
VCE = 5 V
Ta = 25°C
d = 4 mm
Sensing object: White
paper with a reflection
factor of 90%
Forward current IF (mA)
Ambient temperature Ta (°C)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light current IL (μA)
Light Current vs. Forward Current
Characteristics (Typical)
Light current IL (μA)
Forward current IF (mA)
Collector dissipation Pc (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
Response Time Measurement
Circuit
Input
d = 3 mm
d = 4 mm
d = 5 mm
Output
90 %
10 %
Input
Output
Angle deviation θ (°)
EE-SY169A Photomicrosensor (Reflective)
163
Photomicrosensor (Reflective)
EE-SY169B
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• High-quality model with plastic lenses.
• Highly precise sensing range with a tolerance of ±0.6 mm horizontally and vertically.
• With a red LED sensing dyestuff-type links.
• Limited reflective model
• Higher gain than EE-SY169.
• Possible to get the same IL as EE-SY169 with IF=10 mA. (half of
EE-SY169 condition)
• Recommended sensing distance = 4.0 mm
3.2
0.5
6±0.3 2.5
1.8
12.5±0.3
8±0.3
■ Absolute Maximum Ratings (Ta = 25°C)
Surface A
1
3±0.5
1±
0.1 dia.
3±0.5
1
Item
Two, C0.2
1±0.1 dia.
Emitter
(see note)
4.8
(see note)
9.2±0.5
3.2
7±0.1
A
C
K
E
0.5
Detector
3
2.5
Internal Circuit
A
C
K
E
Note: These dimensions are for the
surface A. Other lead wire
pitch dimensions are for the
housing surface.
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Terminal No.
A
K
C
E
Ambient temperature
Symbol
IF
40 mA
(see note 1)
Pulse forward current
IFP
300 mA
(see note 2)
Reverse voltage
VR
3V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
0°C to 70°C
Storage
Tstg
–20°C to 80°C
Tsol
260°C
(see note 3)
Soldering temperature
Tolerance
Name
3 mm max.
±0.3
Anode
Cathode
Collector
Emitter
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
Forward current
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Symbol
Value
Condition
Forward voltage
VF
1.85 V typ., 2.3 V max.
IF = 20 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 3 V
Peak emission wavelength
λP
660 nm typ.
IF = 20 mA
Light current
IL
160 μA min., 2,000 μA max.
IF = 10 mA, VCE = 5 V
White paper with a reflection ratio of
90%, d = 4 mm (see note)
Dark current
ID
2 nA typ., 200 nA max.
VCE = 5 V, 0 lx
Leakage current
ILEAK
2 μA max.
IF = 20 mA, VCE = 5 V with no reflection
---
---
λP
850 nm typ.
VCE = 5 V
Rising time
tr
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Falling time
tf
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Detector
Collector–Emitter saturated volt- VCE (sat)
age
Peak spectral sensitivity wavelength
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
164
EE-SY169B Photomicrosensor (Reflective)
■ Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
100
IF
40
80
30
60
20
40
10
20
−20
0
20
40
60
1,000
800
600
400
200
0
0
100
80
10
0
90
80
70
60
80
100
Ambient temperature Ta (°C)
200
100
3
4
5
6
7
8
9
0.01
0.001
−30 −20 −10 0
100
140
120
100
80
60
40
20
0
−30
−20
−10
0
10
Angle deviation θ (°)
20
30
tr
0.1
IF = 10 mA
VCE = 5 V
Ta = 25°C
d1 = 4 mm
100
d2
40
Direction
d1
Sen-
20
105
10
1
Sensing Position Characteristics
(Typical)
120
Sensing object: White
paper with a reflection
factor of 90%
60
Sensor
sor
Sensing object:
White paper with
a reflection factor
of 90%
80
Sensing
d = 0 object
60
d2
Direction
40
d1
Sensor
20
0
1
Relative light current IL (%)
Relative light current IL (%)
d
25
Load resistance RL (kΩ)
d1 = 3.5 mm
d1 = 4.0 mm
d1 = 4.5 mm
80
110
180
20
10
1
0.01
2
3
4
5
6
5
6
Sensing object:
White paper with
a reflection factor
of 90%
Ta = 25°
IF = 10 mA
VCE = 10 V
8
9
10
11
12
13
Response Time Measurement
Circuit
Input
d
0
t
90 %
10 %
Output
d = 3 mm
d = 4 mm
d = 5 mm
100
7
Distance d2 (mm)
Sensing Angle Characteristics
(Typical)
200
15
tf
10 20 30 40 50 60 70 80 90
IF = 10 mA
VCE = 5 V
Ta = 25°C
10
d = 3 mm Ta = 25°C
d = 4 mm IF = 10 mA
d = 5 mm VCE = 10 V
10
100
Distance d2 (mm)
160
5
0
1,000
Sensing Position Characteristics
(Typical)
Sensing Angle Characteristics
(Typical)
220
IF = 2.5 mA
Vcc = 5 V
Ta = 25°C
0.1
Distance d (mm)
240
0
Response Time vs. Load
Resistance Characteristics
(Typical)
0
2
IF = 5 mA
Collector−Emitter voltage VCE (V)
1
0
1
400
60
10
Relative light current IL (%)
Light current IL (μA)
300
0
IF = 10 mA
600
10,000
120
Sensing object:
White paper
with a reflection
factor of 90%
400
800
Ambient temperature Ta (°C)
Ta = 25°C
IF = 20 mA
VCE = 10 V
500
50
100
Sensing Distance Characteristics
(Typical)
600
40
Response time tr, tf (μs)
Dark Current ID (nA)
Relative light current IL (%)
100
40
IF = 15 mA
1,000
VCE = 10 V
0lx
1,000
20
30
10,000
110
0
20
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 10 mA
VCE = 5 V
−20
1,200
Forward current IF (mA)
120
60
−40
Sensing object: White
paper with a reflection
factor of 90%
200
Ambient temperature Ta (°C)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
IF = 20 mA
Ta = 25°C
d = 4 mm
1,400
Relative light current IL (%)
0
−40
1,600
d = 4 mm
VCE = 5 V
Light current IL (μA)
50
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
1,200
Light current IL (μA)
PC
Forward current IF (mA)
1,400
120
Collector dissipation Pc (mW)
60
Light Current vs. Forward Current
Characteristics (Typical)
0
t
tr
95
Input
tf
IL
VCC
90
Output
85
RL
80
−20
−10
0
10
20
Angle deviation θ (°)
EE-SY169B Photomicrosensor (Reflective)
165
Photomicrosensor (Reflective)
EE-SY113
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Compact reflective Photomicrosensor (EE-SY110) with a molded
housing and a dust-tight cover.
• Recommended sensing distance = 4.4 mm
Four, 0.5
■ Absolute Maximum Ratings (Ta = 25°C)
Item
Emitter
Symbol
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Notch for directional discrimination
2.5
Detector
Four, 0.25
15 to 18
Ambient temperature
Internal Circuit
A
C
K
E
Terminal No.
Name
A
Anode
K
C
Cathode
Collector
E
Unless otherwise specified, the
tolerances are as shown below.
Emitter
Dimensions
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Operating
Topr
–40°C to 80°C
Storage
Tstg
–40°C to 85°C
Tsol
260°C
(see note 3)
Soldering temperature
Tolerance
3 mm max.
Rated value
Forward current
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
160 μA min., 1,600 μA max.
IF = 20 mA, VCE = 10 V
White paper with a reflection ratio of
90%, d = 4.4 mm (see note)
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
2 μA max.
IF = 20 mA, VCE = 10 V with no reflection
---
---
λP
850 nm typ.
VCE = 10 V
Rising time
tr
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Falling time
tf
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Emitter
Detector
Collector–Emitter saturated volt- VCE (sat)
age
Peak spectral sensitivity wavelength
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
166
EE-SY113 Photomicrosensor (Reflective)
IF = 30 mA
■ Engineering Data
VCE = 10 V
d = 4.4 mm
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Ambient temperature Ta (°C)
Ta = 25°C
IF = 20 mA
VCE = 10 V
Light current IL (μA)
Sensing object: White paper
with a reflection factor of 90%
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
Sensing Distance Characteristics
(Typical)
IF = 20 mA
VCE = 10 V
Ta = 25°C
d1 = 4.4 mm
Sensing object:
White paper
with a reflection
factor of 90%
d1
d2
Direction
Distance d2 (mm)
IF = 30 mA
IF = 20 mA
IF = 10 mA
Vcc = 5 V
Ta = 25°C
Load resistance RL (kΩ)
Sensing Angle Characteristics
(Typical)
Relative light current IL (%)
Ambient temperature Ta (°C)
IF = 40 mA
Response Time vs. Load
Resistance Characteristics
(Typical)
Response time tr, tf (μs)
VCE = 10 V
0x
Dark current ID (nA)
Relative light current IL (%)
IF = 20 mA
VCE = 5 V
d = 4.4 mm
Sensing object: White
paper with a reflection
factor of 90%
Collector−Emitter voltage VCE (V)
Forward current IF (mA)
Ambient temperature Ta (°C)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Sensing object: White paper
with a reflection factor of 90%
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light current IL (mA)
Light Current vs. Forward Current
Characteristics (Typical)
Light current IL (μA)
Forward current IF (mA)
Collector dissipation Pc (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
Ta = 25°C
VCE = 10 V
IF = 20 mA
d = 4.4 mm
Sensing object: White
paper with a reflection
factor of 90%
Angle deviation θ (°)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SY113 Photomicrosensor (Reflective)
167
Photomicrosensor (Reflective)
EE-SY313/-SY413
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Incorporates an IC chip with a built-in detector element and amplifier.
• Incorporates a detector element with a built-in temperature compensation circuit.
• Compact reflective Photomicrosensor (EE-SY310/-SY410) with a
molded housing and a dust-tight cover.
• A wide supply voltage range: 4.5 to 16 VDC
• Directly connects with C-MOS and TTL.
• Dark ON model (EE-SY313)
• Light ON model (EE-SY413)
• Recommended sensing distance = 4.4 mm
Five, 0.5
■ Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rated value
50 mA (see note 1)
Forward current IF
Emitter
15 to 18
17 to 24
Detector
Internal Circuit
A
V
O
K
G
Terminal No.
Name
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Tolerance
A
Anode
3 mm max.
±0.3
K
Cathode
3 < mm ≤ 6
V
Power supply
(Vcc)
6 < mm ≤ 10
±0.375
±0.45
O
G
Output (OUT)
Ground (GND)
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Reverse voltage VR
4V
Pulse forward
current
Power supply
voltage
Output voltage
IFP
VCC
1A
(see note 2)
16 V
VOUT
28 V
Output current
IOUT
16 mA
POUT
250 mW (see note 1)
Topr
Tstg
Tsol
–40°C to 65°C
–40°C to 85°C
260°C
(see note 3)
Permissible
output dissipation
Ambient tem- Operating
perature
Storage
Soldering temperature
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Emitter
Detector
Item
Forward voltage
Symbol
VF
Value
1.2 V typ., 1.5 V max.
Reverse current
IR
Condition
IF = 20 mA
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission waveλP
length
Low-level output voltage VOL
920 nm typ.
IF = 20 mA
0.12 V typ., 0.4 V max.
High-level output voltage
VOH
15 V min.
Current consumption
ICC
3.2 mA typ., 10 mA max.
Vcc = 4.5 to 16 V, IOL = 16 mA, without incident light (EESY313), with incident light (EE-SY413) (see notes 1 and
2)
Vcc = 16 V, RL = 1 kΩ, with incident light (EE-SY313), without incident light (EE-SY413) (see notes 1 and 2)
Vcc = 16 V
870 nm typ.
VCC = 4.5 to 16 V
10 mA typ., 20 mA max.
VCC = 4.5 to 16 V
Peak spectral sensitivity λP
wavelength
LED current when output is OFF
IFT
LED current when output is ON
Hysteresis
ΔH
17% typ.
VCC = 4.5 to 16 V
Response frequency
f
50 pps min.
VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA
Response delay time
tPLH (tPHL)
3 μs typ.
VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA
Response delay time
tPHL (tPLH)
20 μs typ.
VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA
168
EE-SY313/-SY413 Photomicrosensor (Reflective)
Note: 1. With incident light" denotes the condition whereby
the light reflected by white paper with a reflection
factor of 90% at a sensing distance of 4.4 mm is
received by the photo IC when the forward current (IF)
of the LED is 20 mA.
4. The value of the response frequency is measured by rotating
the disk as shown below.
200 mm dia.
15 mm
2. Sensing object: White paper with a reflection factor of
90% at a sensing distance of 4.4 mm.
3. Hysteresis denotes the difference in forward LED
current value, expressed in percentage, calculated
from the respective forward LED currents when the
photo IC is turned from ON to OFF and when the
photo IC is turned from OFF to ON.
15 mm
15 mm
4.4 mm
5. The following illustrations show the definition of response delay
time. The value in the parentheses applies to the EE-SY413.
Input
Input
Output
Output
(tPLH)
(tPHL)
(tPHL)
EE-SY313
(tPLH)
EE-SY413
■ Engineering Data
Note: The values in the parentheses apply to the EE-SY413.
IFT OFF (IFT ON)
IFT ON (IFT OFF)
Supply voltage VCC (V)
LED current IFT (mA)
Forward current IF (mA)
IFT OFF (IFT ON)
IFT ON (IFT OFF)
Supply voltage VCC (V)
Low-level Output Voltage vs.
Output Current (Typical)
Low-level Output Voltage vs.
Ambient Temperature
Characteristics (Typical)
Ta = 25°C
VCC = 5 V
IF = 0 mA (20 mA)
Output current IC (mA)
Response Delay Time vs. Forward
Current (Typical)
Response delay time tPHL, tPLH (μs)
Current consumption Icc (mA)
Ta = 25°C
IF = 0 mA (15 mA)
Ta = 70°C
Ta = 25°C
RL = 1 kΩ
Forward voltage VF (V)
Ambient temperature Ta (°C)
Current Consumption vs. Supply
Voltage (Typical)
Ta = −30°C
Ta = 25°C
Low level output voltage VOL (V)
VCC = 5 V
RL = 330 Ω
LED Current vs. Supply Voltage
(Typical)
VCC = 5 V
RL = 330 Ω
Ta = 25°C
VOUT
(EE-SY3@@)
VOUT
(EE-SY4@@)
tPHL (tPLH)
VCC = 5 V
IF = 0 mA (20 mA)
IOL = 16 mA
IOL = 5 mA
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Distance d2 (mm)
LED current IFT (mA)
LED Current vs. Ambient
Temperature Characteristics
(Typical)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Low level output voltage VOL (V)
Ambient temperature Ta (°C)
Output allowable dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
IF = 20 mA
VCC = 5 V
Ta = 25°C
Sensing object: White
paper with a reflection
factor of 90%
Operate
Release
tPLH (tPHL)
Forward current IF (mA)
Distance d1 (mm)
EE-SY313/-SY413 Photomicrosensor (Reflective)
169
Photomicrosensor (Reflective)
EE-SY110
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Compact reflective model with a molded housing.
• Recommended sensing distance = 5.0 mm
■ Absolute Maximum Ratings (Ta = 25°C)
Four, 0.5
Item
+0.2
- 0.3
Emitter
Four, R1.5
Detector
15.2±0.2
Four, 0.25
15 to 18
Ambient temperature
Symbol
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–40°C to 85°C
Storage
Tstg
–40°C to 85°C
Tsol
260°C
(see note 3)
Soldering temperature
Internal Circuit
A
C
K
E
Terminal No.
Name
A
K
Anode
Cathode
C
E
Collector
Emitter
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
3 mm max.
±0.2
3 < mm ≤ 6
±0.24
6 < mm ≤ 10
±0.29
10 < mm ≤ 18
±0.35
18 < mm ≤ 30
±0.42
Rated value
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
200 μA min., 2,000 μA max.
IF = 20 mA, VCE = 10 V
White paper with a reflection ratio of
90%, d = 5 mm (see note)
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
2 μA max.
IF = 20 mA, VCE = 10 V with no reflection
---
---
λP
850 nm typ.
VCE = 10 V
Rising time
tr
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Falling time
tf
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Emitter
Detector
Collector–Emitter saturated volt- VCE (sat)
age
Peak spectral sensitivity wavelength
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
170
EE-SY110 Photomicrosensor (Reflective)
IF = 30 mA
■ Engineering Data
Light Current vs. Forward Current
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Sensing Distance Characteristics
(Typical)
Light current IL (μA)
Sensing object: White paper
with a reflection factor of 90%
Sensing Position Characteristics
(Typical)
IF = 20 mA
VCE = 10 V
Ta = 25°C
d1 = 5 mm
Sensing object:
White paper
with a reflection
factor of 90%
Direction
Distance d2 (mm)
Distance d (mm)
IF = 30 mA
IF = 20 mA
IF = 10 mA
Response Time vs. Load
Resistance Characteristics
(Typical)
Vcc = 5 V
Ta = 25°C
Load resistance RL (kΩ)
Ambient temperature Ta (°C)
Relative light current IL (%)
Ta = 25°C
IF = 20 mA
VCE = 10 V
IF = 40 mA
Collector−Emitter voltage VCE (V)
Sensing Angle Characteristics
VCE = 10 V
(Typical)
IF = 20 mA
Relative light current IL (%)
Ambient temperature Ta (°C)
Ta = 25°C
d = 5 mm
Response time tr, tf (μs)
VCE = 10 V
0x
Dark current ID (nA)
Relative light current IL (%)
IF = 20 mA
VCE = 5 V
Light current IL (mA)
Forward current IF (mA)
Ambient temperature Ta (°C)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Sensing object: White paper with a
reflection factor of 90%
d = 5 mm
VCE = 10 V
Light current IL (mA)
Forward current IF (mA)
Collector dissipation Pc (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
d = 5 mm
Sensing object:
White paper
with a reflection
factor of 90%
d
Angle deviation θ (°)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SY110 Photomicrosensor (Reflective)
171
Photomicrosensor (Reflective)
EE-SF5(-B)
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Dust-tight construction.
• With a visible-light intercepting filter which allows objects to be
sensed without being greatly influenced by the light radiated from
fluorescent lamps.
• Mounted with M2 screws.
• Model with soldering terminals (EE-SF5).
• Model with PCB terminals (EE-SF5-B).
• Recommended sensing distance = 5.0 mm
Matted
1.9 dia.
2.2±0.2 dia. hole
■ Absolute Maximum Ratings (Ta = 25°C)
Item
Four,
1.5
Four,
0.5
7.6±1
Emitter
Symbol
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 80°C
Storage
Tstg
–30°C to 80°C
Tsol
260°C
(see note 3)
Four, 0.25
2.54
7.62±0.3
2.54±0.2
EE-SF5
Detector
EE-SF5-B
Internal Circuit
A
C
K
Dimensions
E
Terminal No.
A
K
C
E
Unless otherwise specified, the
tolerances are as shown below.
Name
Anode
Cathode
Collector
Emitter
Ambient temperature
Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
6 < mm ≤ 10
±0.375
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
Forward current
Soldering temperature
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
200 μA min., 2,000 μA max.
IF = 20 mA, VCE = 10 V
White paper with a reflection ratio of
90%, d = 5 mm (see note)
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
2 μA max.
IF = 20 mA, VCE = 10 V with no reflection
---
---
λP
850 nm typ.
VCE = 10 V
Rising time
tr
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Falling time
tf
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Detector
Collector–Emitter saturated volt- VCE (sat)
age
Peak spectral sensitivity wavelength
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
172
EE-SF5(-B) Photomicrosensor (Reflective)
■ Engineering Data
IF = 20 mA
VCE = 5 V
Light current IL (mA)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
Ta = 25°C
(a) : d1 = 3 mm
(b) : d1 = 5 mm
Sensing object: White
paper with a reflection
factor of 90%
d1
Sensing Angle Characteristics
(Typical)
Sensing Angle Characteristics
(Typical)
Relative light current IL (%)
Relative light current IL (%)
Ta = 25°C
IF = 20 mA
VCE = 10 V
Sensing object: White paper
with a reflection factor of 90%
d = 5 mm
Angle deviation θ (°)
VCC = 5 V
Ta = 25°C
Sensing Position Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
Ta = 25°C
d1 = 5 mm
Sensing
object: White
paper with a
reflection
factor of 90%
Phototransistor side
LED side
d1 =
5 mm
Distance d2 (mm)
Distance d2 (mm)
Distance d (mm)
IF = 10 mA
Load resistance RL (kΩ)
Relative light current IL (%)
Ta = 25°C
VCE = 10 V
Sensing object: White paper
with a reflection factor of 90%
IF = 20 mA
Response Time vs. Load
Resistance Characteristics
(Typical)
VCE = 10 V
0lx
Relative light current IL (%)
Sensing Distance Characteristics
(Typical)
Ta = 25°C
d = 5 mm
IF = 40 mA
Sensing object:
White paper with
a reflection factor
of 90%
IF = 30 mA
Collector−Emitter voltage VCE (V)
Dark Current ID (nA)
Relative light current IL (%)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Ambient temperature Ta (°C)
Light current IL (μA)
Ta = 25°C
VCE = 10 V
d = 5 mm
Sensing object:
White paper with a
reflection factor of
90%
Forward current IF (mA)
Ambient temperature Ta (°C)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Response time tr, tf (μs)
Forward current IF (mA)
Light current IL (μA)
Light Current vs. Forward Current
Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Sensing
object
Ta = 25°C
IF = 20 mA
VCE = 10 V
d = 5 mm
Sensing object: White paper
with a reflection factor of 90%
Output
Angle deviation θ (°)
EE-SF5(-B) Photomicrosensor (Reflective)
173
Photomicrosensor (Reflective)
EE-SY310/-SY410
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Incorporates an IC chip with a built-in detector element and amplifier.
• Incorporates a detector element with a built-in temperature compensation circuit.
• Compact reflective model with a molded housing.
• A wide supply voltage range: 4.5 to 16 VDC
• Directly connects with C-MOS and TTL.
• Dark ON model (EE-SY310)
• Light ON model (EE-SY410)
• Recommended sensing distance = 5.0 mm
Five, 0.5
4.6 +0.2
−0.3
Two. R1.5
Two. R2
Five, 0.3
■ Absolute Maximum Ratings (Ta = 25°C)
Emitter
15 to 18
17 to 24
Reverse voltage
IFP
V
O
Output current
Detector
K
G
Terminal No.
Name
A
Anode
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Tolerance
3 mm max.
±0.2
K
Cathode
3 < mm ≤ 6
V
Power supply
(Vcc)
6 < mm ≤ 10
±0.24
±0.29
Output (OUT)
Ground (GND)
10 < mm ≤ 18
±0.35
18 < mm ≤ 30
±0.42
O
G
Symbol Rated value
50 mA
IF
(see note 1)
VR
4V
Pulse forward
current
Power supply
voltage
Output voltage
Internal Circuit
A
Item
Forward current
Permissible output dissipation
Ambient tempera- Operating
ture
Storage
Soldering temperature
VCC
1A
(see note 2)
16 V
VOUT
28 V
IOUT
16 mA
POUT
250 mW
(see note 1)
–40°C to 75°C
–40°C to 85°C
260°C
(see note 3)
Topr
Tstg
Tsol
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Symbol
Value
Forward voltage
VF
1.2 V typ., 1.5 V max.
Reverse current
IR
Condition
IF = 20 mA
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength λP
920 nm typ.
IF = 20 mA
Low-level output voltage
VOL
0.12 V typ., 0.4 V max.
Vcc = 4.5 to 16 V, IOL = 16 mA,
without incident light (EE-SY310), with incident light
(EE-SY410) (see notes 1 and 2)
High-level output voltage
VOH
15 V min.
Vcc = 16 V, RL = 1 kΩ,
with incident light (EE-SY310), without incident light
(EE-SY410) (see notes 1 and 2)
Current consumption
ICC
3.2 mA typ., 10 mA max.
Vcc = 16 V
Peak spectral sensitivity
wavelength
λP
870 nm typ.
VCC = 4.5 to 16 V
IFT
6 mA typ., 15 mA max.
VCC = 4.5 to 16 V
Hysteresis
ΔH
17% typ.
VCC = 4.5 to 16 V
Response frequency
f
50 Hz min.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA
Response delay time
tPLH (tPHL)
3 μs typ.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA
Response delay time
tPHL (tPLH)
20 μs typ.
VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA
Detector
LED current when output is OFF
LED current when output is ON
174
EE-SY310/-SY410 Photomicrosensor (Reflective)
Note: 1. With incident light" denotes the condition whereby
the light reflected by white paper with a reflection
factor of 90% at a sensing distance of 5 mm is
received by the photo IC when the forward current (IF)
of the LED is 20 mA.
4. The value of the response frequency is measured by rotating
the disk as shown below.
200 mm dia.
15 mm
2. Sensing object: White paper with a reflection factor of
90% at a sensing distance of 5 mm.
15 mm
3. Hysteresis denotes the difference in forward LED
current value, expressed in percentage, calculated
from the respective forward LED currents when the
photo IC is turned from ON to OFF and when the
photo IC is turned from OFF to ON.
15 mm
5 mm
5. The following illustrations show the definition of response delay
time. The value in the parentheses applies to the EE-SY410.
Input
Input
Output
Output
(tPLH)
(tPHL)
(tPHL)
EE-SY310
(tPLH)
EE-SY410
■ Engineering Data
Note: The values in the parentheses apply to the EE-SY410.
IFT OFF (IFT ON)
IFT ON (IFT OFF)
Supply voltage VCC (V)
Ta = 25°C
VCC = 5 V
IF = 0 mA (15 mA)
VCC = 5 V
RL = 330 Ω
Ta = 25°C
VOUT
(EE-SY3@@)
VOUT
(EE-SY4@@)
tPHL (tPLH)
IFT OFF (IFT ON)
IFT ON (IFT OFF)
Low-level Output Voltage vs.
Ambient Temperature
Characteristics (Typical)
Output current IOUT (mA)
Response Delay Time vs. Forward
Current (Typical)
Response delay time tPHL, tPLH (μs)
Current consumption Icc (mA)
Ta = 25°C
IF = 0 mA (15 mA)
LED current IFT (mA)
Forward current IF (mA)
Low-level Output Voltage vs.
Output Current (Typical)
Ta = 25°C
RL = 1 kΩ
Supply voltage VCC (V)
Forward voltage VF (V)
Ambient temperature Ta (°C)
Current Consumption vs. Supply
Voltage (Typical)
Ta = 70°C
Low level output voltage VOL (V)
VCC = 5 V
RL = 330 Ω
Ta = −30°C
Ta = 25°C
LED Current vs. Supply Voltage
(Typical)
VCC = 5 V
IF = 0 mA (15 mA)
IOL = 16 mA
IOL = 5 mA
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Distance d2 (mm)
LED current IFT (mA)
LED Current vs. Ambient
Temperature Characteristics
(Typical)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Low level output voltage VOL (V)
Ambient temperature Ta (°C)
Output allowable dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
IF = 20 mA
VCC = 5 V
Ta = 25°C
Sensing object: White
paper with a reflection
factor of 90%
Operate
Release
Forward current IF (mA)
Distance d1 (mm)
EE-SY310/-SY410 Photomicrosensor (Reflective)
175
Photomicrosensor (Reflective)
EE-SB5(-B)
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Dust-tight construction.
• With a visible-light intercepting filter which allows objects to be
sensed without being greatly influenced by the light radiated from
fluorescent lamps.
• Mounted with M3 screws.
• Model with soldering terminals (EE-SB5).
• Model with PCB terminals (EE-SB5-B).
• Recommended sensing distance = 5.0 mm
Two, 3.2±0.2 dia. holes
Optical axis
Optical axis
■ Absolute Maximum Ratings (Ta = 25°C)
9±0.2
11.5±0.2
Item
Emitter
Symbol
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 80°C
Storage
Tstg
–30°C to 80°C
Tsol
260°C
(see note 3)
Four, 0.5
Four, 0.25
2.54±0.2
2.54±0.2
7.62±0.3
EE-SB5
EE-SB5-B
Detector
Internal Circuit
A
C
K
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
E
Tolerance
Name
3 < mm ≤ 6
±0.3
±0.375
A
K
C
Anode
Cathode
Collector
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
E
Emitter
18 < mm ≤ 30
±0.65
3 mm max.
Terminal No.
Ambient temperature
Rated value
Forward current
Soldering temperature
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
200 μA min., 2,000 μA max.
IF = 20 mA, VCE = 10 V
White paper with a reflection ratio of
90%, d = 5 mm (see note)
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
2 μA max.
IF = 20 mA, VCE = 10 V with no reflection
---
---
λP
850 nm typ.
VCE = 10 V
Rising time
tr
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Falling time
tf
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Emitter
Detector
Collector–Emitter saturated volt- VCE (sat)
age
Peak spectral sensitivity wavelength
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
176
EE-SB5(-B) Photomicrosensor (Reflective)
IF = 30 mA
■ Engineering Data
Distance d (mm)
Relative light current IL (%)
Sensing Angle Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
Light current IL (μA)
Ta = 25°C
IF = 20 mA
VCE = 10 V
Sensing object: White paper
with a reflection factor of 90%
Light current IL (mA)
IF = 20 mA
IF = 10 mA
Response Time vs. Load
Resistance Characteristics
(Typical)
VCC = 5 V
Ta = 25°C
Load resistance RL (kΩ)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Distance Characteristics
(Typical)
VCE = 10 V
0lx
IF = 20 mA
VCE = 10 V
Ta = 25°C
d1 = 5 mm
Sensing object:
White paper
with a reflection
factor of 90%
IF = 40 mA
IF = 30 mA
Response time tr, tf (μs)
Dark Current ID (nA)
Relative light current IL (%)
IF = 20 mA
VCE = 5 V
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Ta = 25°C
d = 5 mm
Sensing object:
White paper with
a reflection factor
of 90%
Collector−Emitter voltage VCE (V)
Forward current IF (mA)
Ambient temperature Ta (°C)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Ta = 25°C
VCE = 10 V
d = 5 mm
Sensing object:
White paper with
a reflection fac
tor of 90%
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
Forward current IF (mA)
Light current IL (mA)
Light Current vs. Forward Current
Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
IF = 20 mA
VCE = 10 V
Ta = 25°C
d1 = 5 mm
Sensing
object: White
paper with a
reflection
factor of 90%
Distance d2 (mm)
Distance d2 (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Ta = 25°C
IF = 20 mA
VCE = 10 V
d = 5 mm
Output
Sensing object: White paper
with a reflection factor of 90%
Angle deviation θ (°)
EE-SB5(-B) Photomicrosensor (Reflective)
177
Photomicrosensor (Actuator)
EE-SA105
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Model has an actuator.
• Low operating force (0.15 N (15 gf)).
• Connects to circuits with ease.
■ Absolute Maximum Ratings (Ta = 25°C)
Item
R0.6
1.4 dia.
1.4
Emitter
Actuator 14.2±0.3
8.2
6.2
Detector
Collector mark
9±1
Four, 0.5
Four, 0.25
6.8±0.5
2.5
Ambient temperature
Internal Circuit
K
C
A
E
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Tolerance
3 mm max.
±0.3
Terminal No.
A
K
C
Name
Anode
Cathode
Collector
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
E
Emitter
18 < mm ≤ 30
±0.65
Symbol
Rated value
Forward current
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
5V
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 70°C
Storage
Tstg
–40°C to
100°C
Tsol
260°C
(see note 3)
Soldering temperature
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min.
IF = 20 mA, VCE = 5 V at free position (FP)
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
10 μA max.
IF = 20 mA, VCE = 5 V at operating position (OP)
Collector–Emitter saturated
voltage
VCE (sat)
0.15 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
850 nm typ.
VCE = 10 V
Forward voltage
Peak spectral sensitivity wave- λP
length
Rising time
tr
---
---
Falling time
tf
---
---
■ Mechanical Characteristics
Actuator operation
(IF = 20 mA, VCE = 5 V)
(see note 1)
Free position (FP):
14.2±0.3 mm
Operating position (OP): 13.0 mm min.
Total travel position (TTP): 12.1 mm max.
Operating force (see note 2)
0.15 N (15 gf) max.
Mechanical life expectancy
500,000 operations min. (The actuator traveling from its FP to FP via TTP is regarded as one operation.)
178
EE-SA105 Photomicrosensor (Actuator)
Note: 1. Free position (FP):
The distance between the bottom of the housing to the
top of the actuator without any external force imposed
on the actuator.
Operating position (OP):
The distance between the bottom of the housing
to the top of the actuator when the actuator is
pressed and the IL becomes ILEAK or less.
Total travel position (TTP): The distance between the bottom of the housing
to the top of the actuator when the actuator is fully
pressed.
2. Operating force: The force required to press the actuator from its FP to OP.
■ Engineering Data
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
IF = 30 mA
IF = 20 mA
IF = 10 mA
Collector−Emitter voltage VCE (V)
Relative light current IL (%)
Light current IL (mA)
IF = 40 mA
Ta = 25°C
Ta = 70°C
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Ta = 25°C
IF = 50 mA
Ta = −30°C
Forward current IF (mA)
Forward voltage VF (V)
Ambient temperature Ta (°C)
Ta = 25°C
VCE = 10 V
Light current IL (mA)
PC
Light Current vs. Forward Current
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
VCE = 10 V
0 lx
Dark current ID (nA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Relative light current IL (%)
Sensing Position Characteristics
(Typical)
IF = 20 mA
VCE = 10 V
Ta = 25°C
d (FP point: 0 mm)
Distance d (mm)
EE-SA105 Photomicrosensor (Actuator)
179
Photomicrosensor (Actuator)
EE-SA113
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
•
•
•
•
Model has an actuator.
Low operating force (0.15 N (15 gf)).
Connects to circuits with ease.
Recommended sensing distance = 4.4 mm
■ Absolute Maximum Ratings (Ta = 25°C)
Item
Emitter
Detector
Ambient temperature
Internal Circuit
K
C
A
E
Terminal No.
A
K
C
E
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
±0.3
Name
3 < mm ≤ 6
±0.375
Anode
Cathode
Collector
Emitter
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
5V
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 70°C
Storage
Tstg
–40°C to 85°C
Tsol
260°C
(see note 3)
Soldering temperature
Tolerance
3 mm max.
Symbol
Forward current
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Forward voltage
Value
VF
1.2 V typ., 1.5 V max.
Condition
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min.
IF = 20 mA, VCE = 5 V at free position (FP)
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
10 μA max.
IF = 20 mA, VCE = 5 V at operating position
(OP)
Collector–Emitter saturated voltage
VCE (sat)
0.15 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
λP
850 nm typ.
VCE = 10 V
Rising time
tr
---
---
Falling time
tf
---
---
Peak spectral sensitivity wavelength
■ Mechanical Characteristics
Actuator operation
(IF = 20 mA, VCE = 5 V)
(see note 1)
Free position (FP):
11.4±0.3 mm
Operating position (OP): 10.2 mm min.
Total travel position (TTP): 9.3 mm max.
Operating force (see note 2)
0.15 N (15 gf) max.
Mechanical life expectancy
500,000 operations min. (The actuator traveling from its FP to FP via TTP is regarded as one operation.)
180
EE-SA113 Photomicrosensor (Actuator)
Note: 1. Free position (FP):
Operating position (OP):
The distance between the bottom of the housing to
the top of the actuator without any external force
imposed on the actuator.
The distance between the bottom of the housing to
the top of the actuator when the actuator is
pressed and the IL becomes ILEAK or less.
Total travel position (TTP):
The distance between the bottom of the housing
to the top of the actuator when the actuator is fully
pressed.
2. Operating force: The force required to press the actuator from its FP to OP.
■ Engineering Data
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
IF = 30 mA
IF = 20 mA
IF = 10 mA
Collector−Emitter voltage VCE (V)
Relative light current IL (%)
Light current IL (mA)
IF = 40 mA
Ta = 25°C
Ta = 70°C
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Ta = 25°C
IF = 50 mA
Ta = −30°C
Forward current IF (mA)
Forward voltage VF (V)
Ambient temperature Ta (°C)
Ta = 25°C
VCE = 10 V
Light current IL (mA)
PC
Light Current vs. Forward Current
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
VCE = 10 V
0 lx
Dark current ID (nA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Relative light current IL (%)
Sensing Position Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
Ta = 25°C
d (FP point: 0 mm)
Distance d (mm)
EE-SA113 Photomicrosensor (Actuator)
181
Photomicrosensor (Actuator Mounted)
EE-SA102
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• An actuator can be attached.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
17
■ Absolute Maximum Ratings (Ta = 25°C)
Item
6
Emitter
0.5±0.1
13.5
Optical
axis
11
Two, R1
Detector
6.2±0.5
2.5
Two, 0.7
Four, 0.25
1.25±0.1
Four, 0.5
Cross section AA
Cross section BB
Internal Circuit
Ambient temperature
5±0.1
K
C
Symbol
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to
100°C
Tsol
260°C
(see note 3)
Soldering temperature
0
Two, 0.7−0.1
dia.
60°
1.8+0.1
−0.05dia.
Two, R0.2
A
E
R3
0.4
3
Terminal No.
Name
A
K
C
Anode
Cathode
Collector
E
Emitter
Two, R0.2
Two, R0.2
0.5
Rated value
Forward current
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Part C
Unless otherwise specified,
the tolerances are ±0.2 mm.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Emitter
Detector
182
EE-SA102 Photomicrosensor (Actuator Mounted)
IF = 30 mA
■ Engineering Data
Ta = 25°C
Ta = 70°C
IF = 20 mA
IF = 10 mA
Collector−Emitter voltage VCE (V)
Response time tr, tf (μs)
VCC = 5 V
Ta = 25°C
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
Relative light current IL (%)
Response Time vs. Load Resistance Characteristics (Typical)
VCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
120
80
Response Time Measurement
Circuit
d
60
40
20
0
−2.0
Load resistance RL (kΩ)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
IF = 40 mA
IF = 30 mA
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Dark current ID (nA)
IF = 50 mA
Forward current IF (mA)
Forward voltage VF (V)
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Relative light current IL (%)
Light current IL (mA)
Ta = 25°C
Ta = 25°C
VCE = 10 V
Light current IL (mA)
Ta = −30°C
Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Relative light current IL (%)
PC
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
Distance d (mm)
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Actuator Dimensions
Input
Output
2.5±0.2 dia.
90 %
10 %
0
1.6−0.1
dia.
13.7±0.1
Input
17±0.2
Output
Note: 1. Make sure that the portions marked with dotted lines have no burrs.
2. The material of the actuator must be selected by considering the infrared
permeability of the actuator.
EE-SA102 Photomicrosensor (Actuator Mounted)
183
Photomicrosensor (Actuator Mounted)
EE-SA103
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• An actuator can be attached.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
0.3±0.1
9
3
1±0.08
■ Absolute Maximum Ratings (Ta = 25°C)
0.3±0.1
60°±2°
4
Item
0.3±0.1
0.3±0.1
Part C
Four, C0.3
1.6+0.05
0 dia.
7.7
4
Two,
0.5
6±0.15
B A
C
2.3
6
Emitter
2.3
Optical
axis
1.5
4.4
2.5
E
1.2+0.05
0 dia.
0.25 max.
0.3 max.
C0.3
0.7±0.1
1.2
C
B A
6.75±0.2
9.3±1
A
K
Four, 0.5
Four, 0.25
(2.5)
(2.5)
Cross section BB
Cross section AA
K
K
Ambient temperature
C
A
Internal Circuit
E
E
Terminal No.
Name
A
Anode
K
C
E
Cathode
Collector
Emitter
Dimensions
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to
100°C
Tsol
260°C
(see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
3 mm max.
±0.3
3 < mm £ 6
±0.375
6 < mm £ 10
±0.45
10 < mm £ 18
±0.55
18 < mm £ 30
±0.65
Rated value
IF
Soldering temperature
C
Unless otherwise specified, the
tolerances are as shown below.
A
Detector
Symbol
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
184
EE-SA103 Photomicrosensor (Actuator Mounted)
■ Engineering Data
Ambient temperature Ta (°C)
Ta = 25°C
Ta = 70°C
IF = 20 mA
IF = 10 mA
Collector−Emitter voltage VCE (V)
VCE = 10 V
0 lx
Dark current ID (nA)
IF = 30 mA
Ambient temperature Ta (°C)
Response Time vs. Load Resistance Characteristics (Typical)
Sensing Position Characteristics
(Typical)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
120
80
Response Time Measurement
Circuit
Distance d (mm)
d
60
40
20
0
−2.0
Load resistance RL (kΩ)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
Relative light current IL (%)
Response time tr, tf (μs)
Forward current IF (mA)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
Relative light current IL (%)
IF = 40 mA
VCC = 5 V
Ta = 25°C
Light current IL (mA)
Ta = −30°C
Forward voltage VF (V)
IF = 50 mA
Light current IL (mA)
Ta = 25°C
VCE = 10 V
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Ta = 25°C
Light Current vs. Forward Current
Characteristics (Typical)
Relative light current IL (%)
PC
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Actuator Dimensions
Input
Output
2.2±0.1 dia.
90 %
10 %
0
1.5−0.1
dia.
Input
Output
Note: 1. Make sure that the portions marked with dotted lines have
no burrs.
2. The material of the actuator must be selected by
considering the infrared permeability of the actuator.
EE-SA103 Photomicrosensor (Actuator Mounted)
185
Photomicrosensor (Actuator Mounted)
EE-SA104
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• An actuator can be attached.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
1±0.08
9
6±0.15
1.6+0.05
0 dia.
■ Absolute Maximum Ratings (Ta = 25°C)
Item
0.3±0.1
0.3±0.1
Part C
Emitter
0.3±0.1
0.3±0.1
Optical
axis
Detector
4.4
9.3±1
0.7±0.1
1.2+0.05
0 dia.
Four, 0.25
0.25 max.
Four, 0.5
6.75±0.2
Ambient temperature
Cross section AA
Cross section BB
Internal Circuit
K
Unless otherwise specified, the
tolerances are as shown below.
A
E
Terminal No.
Name
A
Anode
K
C
E
Cathode
Collector
Emitter
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to
100°C
Tsol
260°C
(see note 3)
Soldering temperature
C
Dimensions
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
IF
Two, 0.5
Four, C0.3
9.7
0.3 max.
Symbol
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
186
EE-SA104 Photomicrosensor (Actuator Mounted)
■ Engineering Data
Ambient temperature Ta (°C)
Ta = 25°C
Ta = 70°C
IF = 20 mA
IF = 10 mA
Collector−Emitter voltage VCE (V)
VCE = 10 V
0 lx
Dark current ID (nA)
IF = 30 mA
Ambient temperature Ta (°C)
Response Time vs. Load Resistance Characteristics (Typical)
Sensing Position Characteristics
(Typical)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
120
80
Response Time Measurement
Circuit
Distance d (mm)
d
60
40
20
0
−2.0
Load resistance RL (kΩ)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
Relative light current IL (%)
Response time tr, tf (μs)
Forward current IF (mA)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
Relative light current IL (%)
IF = 40 mA
VCC = 5 V
Ta = 25°C
Light current IL (mA)
Ta = −30°C
Forward voltage VF (V)
IF = 50 mA
Light current IL (mA)
Ta = 25°C
VCE = 10 V
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Ta = 25°C
Light Current vs. Forward Current
Characteristics (Typical)
Relative light current IL (%)
PC
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Actuator Dimensions
Input
Output
2.2±0.1 dia.
90 %
10 %
0
1.5−0.1
dia.
Input
Output
Note: 1. Make sure that the portions marked with dotted lines have
no burrs.
2. The material of the actuator must be selected by
considering the infrared permeability of the actuator.
EE-SA104 Photomicrosensor (Actuator Mounted)
187
Photomicrosensor (Actuator Mounted)
EE-SA107-P2
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
•
•
•
•
8.5
(18.5)
A
K, E
C
(8) 7.6±0.2 (4)
3.6
1.2
0.5
(Aperture width)
2.4
9.3
(5.5)
15.2
1.2
Post header 292250-3
(Tyco Electronics AMP)
■ Absolute Maximum Ratings (Ta = 25°C)
2.2 +0.1
0 dia.
Item
Emitter
2.4
Optical
axis (18.6)
(5.8)
10.1
(5.1)
15.6
A
An actuator can be attached.
Snap-in mounting model.
Mounts to 1.0-, 1.2- and 1.6-mm-thick PCBs.
Connects to Tyco Electronics AMP’s CT-series connectors.
5.6 0.8
3.3
(1.6)
(1.9)
+0.1
3±0.2
1.1−0.05
5.8 +0.1
−0.2
7.3 +0.1
−0.2
A
Detector
0.5 +0.15
−0.1
*7.6 +1
−0.3
(6)
1.7 +0.15
−0.05
+0.1
3.5 +0.1
−0.2 1.3 −0.05
5.8 +0.1
−0.2
7.3 +0.1
−0.2
17 +0.1
−0.05
Internal Circuit
Note: The asterisked dimension is
specified by datum A only.
Ambient temperature
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Terminal No.
Name
A
Anode
K
C
E
Cathode
Collector
Emitter
Symbol
Rated value
Forward current
IF
50 mA
(see note)
Pulse forward current
IFP
---
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
5V
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–40°C to 85°C
Tsol
---
Soldering temperature
Tolerance
3 mm max.
±0.3
3 < mm £ 6
±0.375
6 < mm £ 10
±0.45
10 < mm £ 18
±0.55
18 < mm £ 30
±0.65
Note:
Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
Recommended Mating Connectors:
Tyco Electronics AMP 179228-3 (crimp connector)
173977-3 (press-fit connector)
175778-3 (crimp connector)
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 30 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 5 V
Dark current
ID
200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.3 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 5 V
Rising time
tr
8 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 1 mA
Falling time
tf
8 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 1 mA
188
EE-SA107-P2 Photomicrosensor (Actuator Mounted)
■ Engineering Data
Ambient temperature Ta (°C)
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Light current IL (mA)
Relative Light Current vs.
Ambient Temperature Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
VCE = 10 V
0 lx
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
120
Relative light current IL (%)
Response time tr, tf (μs)
VCC = 5 V
Ta = 25°C
Forward current IF (mA)
Forward voltage VF (V)
Collector−Emitter voltage VCE (V)
Response Time vs. Load Resistance Characteristics (Typical)
Ta = 25°C
Ta = 70°C
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
80
Response Time Measurement
Circuit
d
60
40
20
0
−2.0
Load resistance RL (kΩ)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
IF = 50 mA
Ta = 25°C
VCE = 10 V
Dark current ID (nA)
Light current IL (mA)
Ta = 25°C
Ta = −30°C
Relative light current IL (%)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Relative light current IL (%)
PC
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Distance d (mm)
Actuator Dimensions
0
3 −0.2
dia.
2±0.1 dia.
Input
Output
10%
90%
Input
VCC
14.7±0.05
17.2±0.1
Output
GND
Note: 1. Make sure that the portions marked with dotted lines have no burrs.
2. The material of the actuator must be selected by considering the
infrared permeability of the actuator.
EE-SA107-P2 Photomicrosensor (Actuator Mounted)
189
Photomicrosensor (Actuator Mounted)
EE-SA407-P2
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
•
•
•
•
•
•
•
292250-3
(Tyco Electronics AMP)
2.2+0.1
0 dia.
0.5 (Aperture width)
An actuator can be attached.
Snap-in mounting model.
Mounts to 1.0-, 1.2- and 1.6-mm-thick panels.
High resolution with a 0.5-mm-wide sensing aperture.
With a 3.6-mm-wide slot.
Photo IC output signals directly connect with logic circuit and TTL.
Connects to Tyco Electronics AMP’s CT-series connectors.
■ Absolute Maximum Ratings (Ta = 25°C)
Optical axis
▲
▲
Item
(see note)
Note: The dimension is specified
by datum A only.
Internal Circuit
Rated value
VCC
7V
Output voltage
VOUT
28 V
Output current
IOUT
16 mA
Permissible output dissipation
POUT
250 mW
(see note)
Ambient temper- Operating
ature
Storage
Topr
–20°C to 75°C
Tstg
–40°C to 85°C
Soldering temperature
Tsol
---
Note: Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
Unless otherwise specified, the
tolerances are as shown below.
V
Symbol
Power supply voltage
0
Dimensions
G
Tolerance
3 mm max.
±0.3
Name
3 < mm ≤ 6
±0.375
V
Power supply
(Vcc)
6 < mm ≤ 10
±0.45
O
G
Output (OUT)
Ground (GND)
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Terminal No.
Recommended Mating Connectors:
Tyco Electronics AMP 179228-3 (crimp connector)
175778-3 (crimp connector)
173977-3 (press-fit connector)
■ Electrical and Optical Characteristics (Ta = 25°C, VCC = 5 V ±10%)
Item
Symbol
Current consumption
Value
ICC
30 mA max.
Condition
With and without incident
Low-level output voltage
VOL
0.35 V max.
IOUT = 16 mA with incident
High-level output voltage
VOH
(VCC x 0.9) V min.
VOUT = VCC without incident, RL = 47 kΩ
Response frequency
f
3 kHz min.
VOUT = VCC, RL = 47 kΩ (see note)
Note: The value of the response frequency is measured by
rotating the disk as shown below.
Disk
2.1 mm
0.5 mm
190
0.5 mm
t = 0.2 mm
EE-SA407-P2 Photomicrosensor (Actuator Mounted)
■ Engineering Data
d2 = 0±1.1 mm
VCC = 5 V
Ta = 25°C
RL = 47 kΩ
Light interrupting plate
Center of optical axis
Output transistor
d1 = 0±0.3 mm
Sensing Position Characteristics
(Typical)
VCC = 5 V
Ta = 25°C
RL = 47 kΩ
d
OFF
d2
ON
−3
−2
−1
0
1
2
3
Distance d (mm)
Distance d (mm)
Ambient temperature Ta (°C)
Center of optical axis
Sensing Position Characteristics
(Typical)
Output transistor
Output allowable dissipation Pc (mW)
Output Allowable Dissipation vs.
Ambient Temperature Characteristics
■ Recommended Mounting Holes
17.1±0.1
(for t =1.0,1.2,1.6)
t = 1.0 mm
t = 1.2 mm
t = 1.6 mm
• When mounting the Photomicrosensor to a panel with a hole opened by pressing, make sure that the hole has no burrs. The mounting strength
of the Photomicrosensor will decrease if the hole has burrs.
• When mounting the Photomicrosensor to a panel with a hole opened by pressing, be sure to mount the Photomicrosensor on the pressing side
of the panel.
• The mounting strength of the Photomicrosensor will increase if the Photomicrosensor is mounted to a panel with a hole that is only a little larger
than the size of the Photomicrosensor, in which case, however, it will be difficult to mount the Photomicrosensor to the panel. The mounting
strength of the Photomicrosensor will decrease if the Photomicrosensor is mounted to a panel with a hole that is comparatively larger than the
size of the Photomicrosensor, in which case, however, it will be easy to mount the Photomicrosensor to the panel. When mounting the Photomicrosensor to a panel, open an appropriate hole for the Photomicrosensor according to the application.
• After mounting the Photomicrosensor to any panel, make sure that the Photomicrosensor does not wobble.
• When mounting the Photomicrosensor to a molding with a hole, make sure that the edges of the hole are sharp enough, otherwise the Photomicrosensor may come fall out.
Actuator Dimensions
0
3 −0.2 dia.
2±0.1 dia.
Note: 1. Make sure that the portions
marked with dotted lines
have no burrs.
2. The material of the actuator
must be selected by
considering the infrared
permeability of the actuator.
EE-SA407-P2 Photomicrosensor (Actuator Mounted)
191
MEMO
192
Microphotonic Devices
Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Manuscript Paper Sensors
EY3A-1051 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EY3A-1081 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Micro-displacement Sensor
Z4D-B01 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
194
196
198
200
193
Selection Guide
■ Manuscript Paper Sensors
Sensing distance
Model
Page
50 mm
EY3A-1051
196
80 mm
EY3A-1081
198
■ Micro-displacement Sensor
Sensing distance
4±1 mm
194
Resolution
Model
±10 µm
Z4D-B01
Selection Guide
Page
200
MEMO
195
Manuscript Paper Sensor (1 Beam: 50 mm)
EY3A-1051
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
Positioning boss
7.9 dia.
Center of detector
• Ensures higher sensitivity and external light interference resistivity
than any other photomicrosensor.
• Narrow sensing range ensures stable sensing of a variety of sensing objects.
■ Absolute Maximum Ratings (Ta = 25°C)
8.3
dia
.
Item
3.2+0.2
-0 dia.
Center of emitter
Pin no. 1
Rated value
VCC
7V
Load voltage
VOUT
7V
Load current
IOUT
10 mA
Ambient temperature
15
0.5
Symbol
Power supply voltage
Operating
Topr
0°C to 60°C
Storage
Tstg
–15°C to 70°C
Note: Make sure there is no icing or condensation when operating the
Sensor.
8 dia.
3 +0
-0.2 dia.
Pin no. Remarks
Name
1
2
O
V
Output (OUT)
Power supply
(Vcc)
3
G
Ground (GND)
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Tolerance
±0.3
3 mm max.
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
10 < mm ≤ 18
±0.45
±0.55
18 < mm ≤ 30
±0.65
30 < mm ≤ 50
±0.8
Recommended Mating Connectors:
Japan Molex 51090-0300 (crimp connector)
52484-0310 (press-fit connector)
■ Electrical and Optical Characteristics (Ta = 0°C to 60°C)
Item
Value
Condition
Power supply voltage
5 V ±5%
---
Current consumption
50 mA max.
VCC = 5 V, RL = ∞
Peak current consumption
200 mA max.
VCC = 5 V, RL = ∞
Low-level output voltage
0.6 V max.
VCC = 5 V, IOL = 4 mA (see note 1)
High-level output voltage
3.5 V min.
VCC = 5 V, RL = 4.7 kΩ (see note 2)
Response delay time (High to Low)
1.5 ms max.
The time required for the output to become “Lo” after placing
sensing object.
Response delay time (Low to high)
1.5 ms max.
The time required for the output to become “Hi” after removing
sensing object.
Note: 1. These conditions are for the sensing of lusterless paper with an OD of 0.9 maximum located at the correct sensing position of the Sensor
as shown in the optical path arrangement on page 197.
2. These conditions are for the sensing of the paper supporting plate with an OD of 0.05 located using the glass plate without paper as
shown in the optical path arrangement on page 197.
196
EY3A-1051 Manuscript Paper Sensor (1 Beam: 50 mm)
■ Characteristics (Paper Table Glass: t = 6 mm max., Transparency Rate: 90% min.)
(Ta =0°C to 60°C)
Item
Characteristic value
Sensing density
Lusterless paper with an OD of 0.9 max. (sensing distance: 50 mm) (see note)
Non-sensing distance
85 mm (from the top of the sensor), OD: 0.05
Paper sensing distance
50 mm (from the top of the sensor)
Ambient illumination
Sunlight: 3,000 lx max., fluorescent light: 2,000 lx max.
Note: 1. The data shown are initial data.
2. Optical darkness (OD) is defined by the following formula:
OD = − log10
PIN (mW):
POUT
PIN
Light power incident upon the document
POUT (mW): Reflected light power from the document
■ Optical Path Arrangement
85 (see note 2)
10 dia.
(see note 1)
50 (standard value)
8.9
Paper supporting plate
Glass
Note: 1. The part with oblique lines indicates the paper sensing area of the EY3A-1051, which is practically
determined by the diameter of the beam and its tolerance.
2. The non-sensing distance of the EY3A-1051 is determined using a paper with an OD of 0.05.
■ Engineering Data
Distance Characteristics (Typical)
OD (value)
4.75 V
5.0 V
5.25 V
Distance (mm)
EY3A-1051 Manuscript Paper Sensor (1 Beam: 50 mm)
197
Manuscript Paper Sensor (1 Beam: 80 mm)
EY3A-1081
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Ensures higher sensitivity and external light interference resistivity
than any other photomicrosensor.
• Narrow sensing range ensures stable sensing of a variety of sensing objects.
Center of detector
Positioning boss
■ Absolute Maximum Ratings (Ta = 25°C)
7.9 dia.
8.3 dia.
Center of emitter
3.2
Item
+0.2
0 dia.
Pin no.1
Symbol
Rated value
Power supply voltage
VCC
7V
Load voltage
VOUT
7V
Load current
IOUT
10 mA
Operating
Topr
0°C to 60°C
Storage
Tstg
–15°C to 70°C
Ambient temperature
Note: Make sure there is no icing or condensation when operating the
Sensor.
3
Pin no. Remarks
0
-0.2
dia.
Name
1
O
Output (OUT)
2
3
V
G
Power supply (Vcc)
Ground (GND)
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
30 < mm ≤ 50
±0.8
50 < mm ≤ 80
±0.95
Recommended Mating Connectors:
Japan Molex 51090-0300 (crimp connector)
52484-0310 (press-fit connector)
■ Electrical and Optical Characteristics (Ta = 0°C to 60°C)
Item
Value
Condition
Power supply voltage
5 V ±5%
---
Current consumption
50 mA max.
VCC = 5 V, RL = ∞
Peak current consumption
200 mA max.
VCC = 5 V, RL = ∞
Low-level output voltage
0.6 V max.
VCC = 5 V, IOL = 4 mA (see note 1)
High-level output voltage
3.5 V min.
VCC = 5 V, RL = 4.7 kΩ (see note 2)
Response delay time (High to Low)
1.5 ms max.
The time required for the output to become “Lo” after placing
sensing object.
Response delay time (Low to high)
1.5 ms max.
The time required for the output to become “Hi” after removing
sensing object.
Note: 1. These conditions are for the sensing of lusterless paper with an OD of 0.7 maximum located at the correct sensing position of the Sensor
as shown in the optical path arrangement on page 199.
2. These conditions are for the sensing of the paper supporting plate with an OD of 0.05 located using the glass plate without paper as
shown in the optical path arrangement on page 199.
198
EY3A-1081 Manuscript Paper Sensor (1 Beam: 80 mm)
■ Characteristics (Paper Table Glass: t = 6 mm max., Transparency Rate: 90% min.)
(Ta =0°C to 60°C)
Item
Characteristic value
Sensing density
Lusterless paper with an OD of 0.7 max. (sensing distance: 80 mm) (see note)
Non-sensing distance
120 mm (from the top of the sensor), OD: 0.05
Paper sensing distance
80 mm (from the top of the sensor)
Ambient illumination
Sunlight: 3,000 lx max., fluorescent light: 2,000 lx max.
Note: 1. The data shown are initial data.
2. Optical darkness (OD) is defined by the following formula:
OD = − log10
POUT
PIN
PIN (mW):Light power incident upon the document
POUT (mW):Reflected light power from the document
■ Optical Path Arrangement
120 (see note 2)
80 (Standard value)
10 dia. (see note 1)
Paper supporting plate
Glass
Note: 1. The part with oblique lines indicates the paper sensing area of the EY3A-1081, which is practically determined by the diameter of the
beam and its tolerance.
2. The non-sensing distance of the EY3A-1081 is determined using a paper with an OD of 0.05.
■ Engineering Data
OD (value)
Distance Characteristics (Typical)
4.75 V
5.0 V
5.25 V
Distance (mm)
EY3A-1081 Manuscript Paper Sensor (1 Beam: 80 mm)
199
Micro-displacement Sensor
Z4D-B01
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
•
•
•
•
2-175489-4
(Tyco Electronics AMP)
35.5
22
16±0.05
9.8
+0.05
Two, 2 –0.15 dia.
• Paper thickness detection
• Multi-feed detection
• Travel distance detection
5.8
Pin no. Remarks
2
1.2
8.8
11.5
Two, 3.5 dia.
(1)
(2)
(3)
(4)
5.7±0.2
5±0.2
8.2±0.2
15.7±0.2
15
10
(1.3)
(6.3)
4.8
Mounting Hole Dimensions
16±0.2
9.1±0.2
+0.1
Two, 2.3−0 dia.
2-M3
■ Applications
Two, 1 dia.
Center of
Detector
2.5
1.8
14.5
9.2
0.4
8.4±0.3
5±0.05
Mounting reference plane
Emitter axis
Easier control enabled by built-in processor circuit.
Resolution: ±10 µm.
Operating area: 6.5±1 mm.
Adapts well to changes in reflection factor using division processing.
Name
1
PLS
LED pulse light emission control signal
2
3
VCC
OUT
Power supply
Output
4
GND
Ground
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
±0.3
3 mm max.
13
40±0.3
Recommended Mating Connectors:
Tyco Electronics AMP
175778-4 (crimp-type connector)
173977-4 (press-fit connector)
Tolerance
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
30 < mm ≤ 50
±0.8
■ Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Supply voltage
VCC
Value
Unit
7
VDC
VDC
Condition
---
LED pulse light emission control signal
PLS
7
LED light emission pulse
TFP
100 (see note) ms
LED
Operating temperature
Topr
–10 to 65
°C
No freezing or condensation
Storage temperature
Tstg
–25 to 80
°C
---
---
Note: Refer to Pulsed Forward Current Rated Curve.
■ Electrical and Optical Characteristics (Ta = –10°C to 65°C)
Item
Symbol
Rated value
Ripple (p-p): 10 mV p-p max.
OUT
0.2 VDC to (VCC–0.3) V
(see note 1)
tr
100 µs max.
(see note 2)
PLS
3.5 VDC to VCC
---
VCC
Current consumption
Response delay time (High to Low)
Response delay time (Low to high)
Note: 1. Load impedance (between OUT-GND) is set at more than 10 kΩ.
2. The time for output voltage to rise from 10% to 90% of the full output range.
200
Condition
5 VDC ±10%
Power supply voltage
Z4D-B01 Micro-displacement Sensor
■ Characteristics (Ta = –10°C to 65°C)
Object: N8.5 Munsell paper with a reflection factor of 70%.
Item
Value
Operating area (see note 1)
6.5 ±1 mm
Sensitivity variation (see note 2)
–1.4 mV/µm ±10% max.
Resolution (see note 3)
±10 µm max. (Ta = 25°C)
Linearity (see note 4)
2% F.S. (full scale) max.
Note: 1. Distance from Mounting Reference Plane to Target.
2. The sensitivity is defined as slope of the line and it represents the variation in the output voltage per unit length between different products.
3. This is the value of the electrical noise width in the output signal converted to a distance under the following conditions.
(1) A/D conversion time: 50 µs max.
(2) Ripple noise in the power supply voltage (Vcc): 10 mVp-p max.
(3) Low-pass filter time constant of the downstream signal processing circuit: 0.4 ms
(4) Distance from mounting reference plane to target: 6.5 mm
4. This is the peak-to-peak value of the deviation of the signal output from a straight line.
A linearity of 2% F.S. indicates the following value:
(1) Distance full-scale converted value: 2 mm × 0.02 = 0.04 mm (40 µm)
(2) Output voltage converted value: 1.4 mV/µm × 40 µm = 56 mV (for a sensor with a sensitivity of 1.4 mV/µm)
■ Engineering Data
Sensitivity change ratio (%)
5
Output voltage (V)
4
3
2
1
5
100
4
80
3
60
2
1
0
−1
−2
−3
−5
5.5
6.0
6.5
7.0
7.5
8.0
Pulsed Forward
Current Rated Curve
(ms)
Vcc=5V
Distance: 6.5 mm
Duty ratio (%)=
100
tFP
T
×100
tFP
40
20
0
−20
−40
T
10
Recommended
operating area
1
−60
−80
−4
0
5.0
Temperature
Characteristics (Typical)
Pulse width (tFP)
Dependency of Object on
Reflection Factor (Typical)
Output change ratio (%)
Operating Distance
Characteristics (Typical)
0
Operating distance (mm)
20
40
60
80
100
−100
−40
−20
0
20
40
60
80
0.1
100
0
Ambient temperature (°C)
Reflection factor of object (%)
20
40
60
80
Duty ratio (%)
■ Circuit Diagram
PSD
I/V
Amplifier
V1
V1+V2
OUT
A/D
port
Output
PLS
(LED optical signal)
5
0
5V
PLS
LED
D port
Timer
GND
Object
5
Sensor output
Microprocessor
(Reference)
ASIC
0
Output voltage
corresponding
to the distance
Micro-displacement Sensor
The sensor output is obtained by adding a pulse signal to the PLS terminal. An output cannot be obtained merely by adding a DC voltage to the PLS terminal.
The output will be a pulse output synchronized with the PLS signal. The output must be held with a latching or sample-and-hold circuit in the microprocessor.
■ Typical Application
Detecting Paper
Thickness in Printers
Detecting Two Sheets of
Paper
Detecting Sheet Thickness
Micro-displacement
Sensor
Paper
Micro-displacement Sensor
Roller
Shaft
Roller
Displacement
Sensor
Sheet
Z4D-B01 Micro-displacement Sensor
201
MEMO
202
Information
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 204
203
Reliability
■ Market Product Quality
OMRON is making efforts so that OMRON’s Photomicrosensors can achieve a failure rate of only 10–7/h.
OMRON will continue improving the quality of its products to comply with OMRON Photomicrosensors users’ demand for product quality while
actively providing good after-sales service.
OMRON’s Photomicrosensors achieved a failure rate of 10 ppm. Figure 5 shows the reasons for the return of OMRON Photomicrosensors.
The reasons for approximately two-thirds of the products sent back were that they were not working or they were destroyed. It is possible that they
were not working or they were destructed because excessive voltages were imposed on them or they were not operated properly according to their
specifications. To solve such problems, OMRON is actively holding preliminary meetings with customers who will use OMRON products and advise
them of the operating conditions required by the products while actively providing them with after-sales service.
Figure 5. Reasons for Products Sent Back
Design problems
Other
(0.4%)
(1.8%)
Element problems
(7.2%)
Component
problems
(27.0%)
Destruction
(35.3%)
Not working
(28.4%)
■ Reliability
The life of any Photomicrosensor depends on the secular changes of the optical output of the LED built into the Photomicrosensor. The following
are the output characteristics of the Photomicrosensor, all of which depend on the optical output of the LED.
Phototransistor output
Light current (IL)
Photo IC output
LED current IFT with the photo IC output ON and OFF
Amplifier output (reflective sensor)
Sensing distance d
OMRON has been conducting reliability tests of each type of Photomicrosensor to check the secular changes of the optical output of the LED built
into the Photomicrosensor.
204
Product Quality Control and Reliability
■ Reliability Tests
In principle, Photomicrosensors conform to JEITA standards. The following table shows the details of the reliability tests of Photomicrosensors conducted by OMRON.
Figure 6. Details of Reliability Tests
Classification
Test
Detail
Conforming standard
Thermal con- Soldering heat
dition test
resistivity
Evaluates the soldering heat resistivity of products. Usually, JEITA ED-4701/300
ED-8121
this test is conducted under the following conditions.
JIS C7021: A1
Soldering temperature: 260±5°C
Soldering time:10±1 s
IEC Pub68-2-20
Thermal shock
Evaluates the resistivity of products to radical temperature JEITA ED-4701/300
changes. Usually, this test is conducted under the following JIS C7021: A3
conditions.
IEC Pub68-2-14
Ta: 0°C to 100°C (liquid bath) or TstgMIN to TstgMAX (liquid
bath)
Temperature cy- Evaluates the low- and high-temperature
cle
resistivity of products.
Tstg min.
(30 min)
25°C
(5 min)
Tstg max.
(30 min)
25°C
(5 min)
JEITA ED-4701/100
JIS C7021: A4
IEC Pub68-2-14
The five-minute storage
periods at a temperature
of 25°C in the test may
be omitted.
1 cycle
Temperature
Evaluates the high-temperature and
and humidity cy- high-humidity resistivity of products.
cle
65°C
90% to 95%
25°C
10 cycles
−10°C
24 h
Mechanical
test
JEITA ED-4701/200
JIS C7021: A5
IEC Pub68-2-4
1 cycle
Soldering ease Evaluates the terminal soldering ease of the products. Usu- JEITA ED-4701/300
ED-8121
ally, this test is conducted under the following conditions.
JIS C7021: A2
Soldering temperature: 230±5°C
Soldering time: 5±0.5 s
IEC Pub68-2-20
Terminal
strength
Evaluates the resistivity of the terminals of products to the
force imposed on the terminals while the products are
mounted, wired, or operated.
1. Tension test
On each terminal of products, a specified load is
imposed for 10±1 s in the direction of the terminal.
2. Bending test
On the tip of each terminal of products, a specified load
is imposed to bend the terminal by 90° and to change it
back.
Shock resistance
JEITA ED-4701/400
ED-8121
JIS C7021: A11
IEC Pub68-2-21
Judges the structural resistivity and mechanical resistivity of JEITA ED-4701/400
products. The conditions of this test vary with the product
ED-8121
structure. Usually, this test is conducted under the following JIS C7021: A7
conditions.
IEC Pub68-2-27
Impact acceleration:14,700 m/s2
Pulse width: 0.5 ms
A product may be subjected to this test after it
is packed up.
Vibration resis- Evaluates the vibration resistivity of products while they are JEITA ED-4701/400
tance
transported or operated. Usually, this test is conducted under
ED-8121
the following conditions.
JIS C7021: A10
Frequency: 100 to 2000 Hz/4 min
IEC Pub68-2-21
200 m/s2
A product may be subjected to this test after it
is packed up.
Natural drop
JEITA EIAJ-8121
Evaluates the irregular shock resistivity of products while
they are handled, transported, or operated. Usually, this test JIS C7021: A8
IEC Pub68-2-32
is conducted under the following conditions.
Height: 75 cm
No. of times: 3
A product may be subjected to this test after it
is packed up.
Product Quality Control and Reliability
205
Classification
Test
Detail
Life expectan- Continuous op- Evaluates the resistivity of products to a continuous, longcy test
eration
time electrical stress and temperature stress. Usually, this
test is conducted under the following conditions.
Ta: 25±5°C
Bias: IFMAX or PCMAX
High-temperature storage
Evaluates the resistivity of products to a high-storage temperature for a long time. Usually, this test is conducted under
the following conditions.
Ta: TstgMAX
Time: 1,000 hrs
EIAJ-EDX-8121
EIAJ-SD-121: 115
JIS C7021: B10
IEC Pub68-2-2
Low-temperature storage
Evaluates the resistivity of products to a low-storage temperature for a long time. Usually, this test is conducted under the
following conditions.
Ta: TstgMIN
Time: 1,000 hrs
EIAJ-EDX-8121
EIAJ-SD-121: 116
JIS C7021: B12
IEC Pub68-2-1
High-temperature and highhumidity storage
Evaluates the resistivity of products to a high-storage temperature and high storage humidity for a long time. Usually,
this test is conducted under the following conditions.
Ta: 60°C
Humidity: 90%
Time: 1,000 hrs
EIAJ-EDX-8121
EIAJ-SD-121: 117
JIS C7021: B11
IEC Pub68-2-3
High-temperature reverse
bias
Evaluates the resistivity of products to a continuous electrical EIAJ-SD-121: 203
stress and temperature stress.
JIS C7021: B8
Note: The above testing conditions and testing times depend on the features of each product.
206
Conforming standard
EIAJ-EDX-8121
EIAJ-SD-121: 201
JIS C7021: B4
Product Quality Control and Reliability
A product may be subjected to this test at a
high temperature, low
temperature, or high
temperature and humidity.
A product may be subjected to this test at a
low temperature, high
temperature, or high humidity.
■ Data from Reliability Tests
The following tables show the results of the reliability tests of typical Transmissive Photomicrosensors with an Infrared LED conducted by OMRON.
Providing this data does not imply that OMRON guarantees the specified reliability level.
Typical Failure Rates (MTTF Data)
EE-SX1041 (Transmissive Phototransistor Output)
Failure Criteria
Item
Symbol
Measuring
conditions
Failure criteria
General test (see note)
Life test
Forward voltage
VF
IF = 30 mA
1.5 V max.
1.8 V max.
Reverse current
IR
VR = 4 V
10 μA max.
20 μA max.
Dark current
ID
VCE = 10 V 0lx
200 nA max.
400 nA max.
Light current
IL
IF = 20 mA
VCE = 10 V
0.5 mA min.
14 mA max.
Initial value × 0.7 min.
Note: Except life test.
Test Results
Test item
Test conditions (see note 1)
Number of
samples
Failure rate (1/h)
(see note 2)
22 pcs
4.4 x 104
0
5.22 x 10–5
High-temperature stor- Ta = 100°C
age
2000 h
22 pcs
4.4 x 104
0
5.22 x 10–5
Low-temperature stor- Ta = –30°C
age
2000 h
22 pcs
4.4 x 104
0
5.22 x 10–5
High-temperature and
high-humidity storage
Ta = 60°C, 90%
2000 h
22 pcs
4.4 x 104
0
5.22 x 10–5
High-temperature reverse bias
Ta = 85°C, VCE = 30 V
2000 h
22 pcs
4.4 x 104
0
5.22 x 10–5
Temperature cycle
–30°C (30 min) to 100°C (30 min) 22 pcs
10 times
---
0
---
Shock resistance
11 pcs
14,700 m/s2, 0.5 ms, 3 times
each in ±X, ±Y, and ±Z directions
---
0
---
Vibration resistance
20 to 2,000 Hz, 1.5 mm or
11 pcs
98 m/s2 each in X, Y, and Z directions
---
0
---
Continuous operation
Ta = 25°C, IF = 50 mA
2000 h
Component hours Number of failures
(h)
Note: 1. The tests after 1001 hours are for reference only.
2. Confidence level of 90%.
Product Quality Control and Reliability
207
EE-SX1235A-P2 (Transmissive Phototransistor Output)
Failure Criteria
Item
Symbol
Forward voltage
Measuring
conditions
Failure criteria
General test (see note)
Life test
VF
IF = 30 mA
1.5 V max.
1.8 V max.
20 μA max.
Reverse current
IR
VR = 4 V
10 μA max.
Dark current
ID
VCE = 10 V 0lx
200 nA max.
400 nA max.
Light current
IL
IF = 20 mA
VCE = 5 V
0.5 mA min.
14 mA max.
Initial value × 0.7 min.
Note: Except life test.
Test Results
Test item
Test conditions (see note 1)
Component hours Number of failures
(h)
Failure rate (1/h)
(see note 2)
22 pcs
4.4 x 104
0
5.22 x 10–5
High-temperature stor- Ta = 100°C
age
2000 h
22 pcs
4.4 x 104
0
5.22 x 10–5
Low-temperature stor- Ta = –40°C
age
2000 h
22 pcs
4.4 x 104
0
5.22 x 10–5
High-temperature and
high-humidity storage
Ta = 60°C, 90%
2000 h
22 pcs
4.4 x 104
0
5.22 x 10–5
High-temperature reverse bias
Ta = 85°C, VCE = 30 V
2000 h
22 pcs
4.4 x 104
0
5.22 x 10–5
Temperature cycle
–40°C (30 min) to 100°C (30 min) 22 pcs
10 times
---
0
---
Shock resistance
294 m/s2, 0.5 ms, 3 times each in 11 pcs
±X, ±Y, and ±Z directions
---
0
---
Vibration resistance
5 to 50 Hz, 1.5 mm or 9.8 m/s2
each in X, Y, and Z directions
11 pcs
---
0
---
Continuous operation
Ta = 25°C, IF = 50 mA
2000 h
Number of
samples
Note: 1. The tests after 1001 hours are for reference only.
2. Confidence level of 90%.
208
Product Quality Control and Reliability
EE-SX398 (Transmissive Photo-IC Output)
Failure Criteria
Item
Symbol
Measuring
conditions
Failure criteria
General test (see note)
Life test
Forward voltage
VF
IF = 20 mA
1.5 V max.
1.8 V max.
Reverse current
IR
VR = 4 V
10 μA max.
20 μA max.
Low-level output
voltage
VOL
VCC = 16 V
0.4 V max.
0.48 V max.
High-level output
current
IOH
100 μA max.
200 μA max.
Current consumption
ICC
VCC = 16 V
10 mA max.
12 mA max.
LED current when
output is OFF
IFT
VCC = 16 V
5 mA max.
Initial value × 1.3 max.
IOL = 16 mA
IF = 0 mA
VCC = 16 V
VOUT = 28 V
IF = 5 mA
IOL = 16 mA
Note: Except life test.
Test Results
Test item
Continuous operation
Test conditions (see note 1)
Number of
samples
Ta = 25°C, IF = 20 mA, VCC = 5 V 22 pcs
1500 h
Component hours Number of failures
(h)
Failure rate (1/h)
(see note 2)
3.3 x 104
0
6.96 x 10–5
High-temperature stor- Ta = 100°C
age
2000 h
22 pcs
3.3 x 104
0
6.96 x 10–5
Low-temperature stor- Ta = –40°C
age
2000 h
22 pcs
3.3 x 104
0
6.96 x 10–5
High-temperature and
high-humidity storage
Ta = 60°C, 90%
2000 h
22 pcs
3.3 x 104
0
6.96 x 10–5
High-temperature reverse bias
Ta = 85°C, VCE = 30 V
2000 h
22 pcs
3.3 x 104
0
6.96 x 10–5
Temperature cycle
–40°C (30 min) to 100°C (30 min) 22 pcs
10 times
---
0
---
Shock resistance
11 pcs
14,700 m/s2, 0.5 ms, 3 times
each in ±X, ±Y, and ±Z directions
---
0
---
Vibration resistance
20 to 2,000 Hz, 1.5 mm or
11 pcs
98 m/s2 each in X, Y, and Z directions
---
0
---
Note: 1. The tests after 1001 hours are for reference only.
2. Confidence level of 90%.
Product Quality Control and Reliability
209
EE-SX4235A-P2 (Transmissive Photo-IC Output)
Failure Criteria
Item
Symbol
Measuring
conditions
Failure criteria
General test (see note)
Life test
Current consumption
ICC
VCC = 5.5 V
16.5 mA max.
19.8 mA max.
Low-level output
voltage
VOL
VCC = 4.5 V
0.35 V max.
0.42 V max.
High-level output
voltage
IOH
4.95 V max.
3.96 V max.
IOUT = 16 mA
with incident
VCC = 5.5 V
VOUT = VCC
with incident
RL = 47 kΩ
Note: Except life test.
Test Results
Test item
Test conditions (see note 1)
Component hours Number of failures
(h)
Failure rate (1/h)
(see note 2)
22 pcs
2.2 x 104
0
1.05 x 10–4
High-temperature stor- Ta = 85°C
age
1000 h
22 pcs
2.2 x 104
0
1.05 x 10–4
Low-temperature stor- Ta = –40°C
age
1000 h
22 pcs
2.2 x 104
0
1.05 x 10–4
High-temperature and
high-humidity storage
Ta = 60°C, 90%
1000 h
22 pcs
2.2 x 104
0
1.05 x 10–4
Temperature cycle
–40°C (30 min) to 85°C (30 min) 22 pcs
10 times
---
0
---
Shock resistance
294 m/s2, 0.5 ms, 3 times each in 11 pcs
±X, ±Y, and ±Z directions
---
0
---
Vibration resistance
5 to 50 Hz, 1.5 mm or 9.8 m/s2
each in X, Y, and Z directions
11 pcs
---
0
---
Continuous operation
Ta = 25°C, VCC = 5 V
1000 h
Number of
samples
Note: 1. The tests after 1001 hours are for reference only.
2. Confidence level of 90%.
210
Product Quality Control and Reliability
Micro Sensing Device Data Book
• Application
• Application
examplesexamples
provided in
provided
this document
in this document
are for reference
are for reference
only. In actual
only. applications,
In actual applications,
confirm equipment
confirm equipment
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OMRON
OMRON
Corporation
Corporation
Electronic
Electronic
and Mechanical
and Mechanical
Components
Components
Company
Company
Contact:
Contact:
www.omron.com/ecb
www.omron.com/ecb
Cat. No.Cat.
X062-E1-08
No. X062-E1-08
0815 (1001)(O)
0815 (1001)(O)