QBS-559 - API Technologies

Part Number: QBS-559
Broadband 50 Watt GaN Power Amplifier
20 to 800 MHz high power, class AB design utilizing GaN technology
Features
*Similar Model
•
65 Watts Typical Saturated Output Power
•
Rugged GaN Technology
•
Adaptive Biasing to Promote Efficiency
•
Optional Forward/Reverse Power Detection
•
Blanking Feature Available
• Microprocessor Based Control
o Fault Monitoring
o Temperature Compensation
o Sequencing
o Interface Options
API Technologies’ Model QBS-559 is a high power, class AB solid state amplifier which utilizes the latest GaN technology to offer
broadband performance from 20 to 800 MHz. The RFPA has an integrated, high efficiency DC to DC converter to promote
operation over a wide DC input voltage range of +25 to +32 VDC; drawing 5.1 amps with a saturated gain of 41 dB, and a typical
output power of 65 watts.
The microprocessor based design incorporates an adaptive biasing algorithm to optimize efficiency and output power across the
frequency band under varying load conditions. This rugged, high reliability GaN based amplifier is capable of performing in
adverse commercial and military environments with EMI and moisture sealing, and will not be damaged operating into a 10:1
load mismatch at full rated power. Optional RF blanking controlled through an LVDS signal, and forward/reverse power
detection are available upon request.
Technical Specifications (25°C) (1)
Parameter
Maximum Ratings
Typical
Min / Max
20 - 800 MHz
20 - 700 MHz
Linear Gain
47 dB
─
PSAT Gain (2)
41 dB
─
Output Power @ PSAT
65 W
50 W Min.
Power Flatness @ PSAT
± 0.75 dB
± 1.0 dB Max.
Power Over Temp. @ PSAT
± 1.0 dB
─
Input VSWR
1.2 :1
1.5 :1 Max.
Noise Figure
7 dB
10 dB Max.
2nd Harmonic @ PSAT
-20 dBc
─
3rd Harmonic @ PSAT
-11 dBc
─
Spurious Signals (non-harmonic)
< -70 dBc
─
DC Supply Voltage
+28 Volts
+25 to +32 Volts
700 mA
─
5.1 Amps
5.1 Amps
5 µs
10 µs
Frequency Range
Current Draw (Quiescent)
Current Draw @ PSAT
Switching Time ON/OFF
Package Dimensions
(3)
7.98(L) x 4.59(W) x 1.55(H) inches
Material
Finish
Storage Temperature
-45°C to +100°C
Operating Temperature (Case)
-20°C to +80°C
DC Input Voltage
+32 VDC
RF Input Power
+23 dBm
Protection
VSWR Tolerance
10 :1
Case Shut Off Temperature
+85°C
Notes:
1. Specifications are based on measured
performance in a 50Ω system.
2. With a nominal input power of +7 dBm.
3. Switching time pertains to an optional
blanking function controlled by an LVDS
signal.
6061-T6 Aluminum Alloy
Clear Iridite (MIL-DTL-5541F, Class 3)
Weight (no heatsink)
RF Connectors
2.5 lbs (1134 grams)
SMA Female (4-Hole Flange)
DC Interface Connector
15 Pin D-Sub Plug
Rev Date: 5/8/2014
© API Technologies Corp. Proprietary Information
Page # 1
|
www.apitech.com
|
micro.apitech.com
|
+1.888.553.7531
|
[email protected]
Part Number: QBS-559
Outline Drawing
DC Power / Interface (Refer to Detail A)
D-SUB Pin Designations
Pin #
Signal
Pin #
Signal
1
28V
9
28V RTN
2
28V
10
28V RTN
3
28V
11
28V RTN
4
N/C
12
N/C
5
RESERVED
13
RESERVED
6
N/C
14
BLANKING (-)
7
BLANKING (+)
15
Chassis GND
8
Chassis GND
Rev Date: 5/8/2014
© API Technologies Corp. Proprietary Information
Page # 2
|
www.apitech.com
|
micro.apitech.com
|
+1.888.553.7531
|
MicrowaveS[email protected]