EMD4 / UMD4N Transistors General purpose (dual digital transistors) EMD4 / UMD4N zExternal dimensions (Unit : mm) (3) 0.22 (4) (5) (6) (2) 1.2 1.6 0.5 0.5 1.0 1.6 EMD4 (1) 0.5 0.13 zFeatures 1) Both the DTA114Y chip and DTC144E chip in an EMT6 or UMT6 package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. ROHM : EMT6 Each lead has same dimensions Abbreviated symbol : D4 zStructure A PNP and NPN digital transistor (each with a single built in resistor) 1.3 0.65 (1) 2.0 (3) (2) (4) (5) (6) 0.2 0.65 UMD4N 1.25 ROHM : UMT6 EIAJ : SC-88 zEquivalent circuit 0.7 0∼0.1 0.1Min. 0.9 2.1 0.15 The following characteristics apply to both the DTr1 and DTr2, however, the “ −” sign on DTr2 values for the PNP type have been omitted. Each lead has same dimensions Abbreviated symbol :D4 EMD4 / UMD4N (3) (2) (1) R1 R2 DTr1 DTr1 R1/R2=47kΩ / 47kΩ DTr2 R1/R2=10kΩ / 47kΩ DTr2 R2 (4) R1 (5) (6) zPackaging specifications Taping Package Type Code T2R TR Basic ordering unit (pieces) 8000 3000 EMD4 UMD4N Rev.B 1/4 EMD4 / UMD4N Transistors zAbsolute maximum ratings (Ta = 25°C) Parameter Limits Symbol Unit DTr1(DTC144E) DTr2(DTA114Y) Supply voltage VCC 50 −50 V Input voltage VIN −10 to +40 −40 to +6 V IO 30 −70 IC(Max.) 100 −100 150(TOTAL) Output current mA mW 120(1ELEMENT) Power dissipation Pd Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C zElectrical characteristics (Ta = 25°C) DTr 1 Parameter Input voltage Output voltage Input current Output current Symbol Min. Typ. Max. VI(off) − − 0.5 Unit VI(on) 3 − − VO(on) − 0.1 0.3 V II − − 0.18 mA VI=5V IO(off) − − 0.5 µA VCC=50V, VI=0V VO=5V, IO=5mA V Conditions VCC=5V, IO=100µA VO=0.3V, IO=2mA IO/II=10mA/0.5mA DC current gain GI 68 − − − Input resistance R1 32.9 47 61.1 kΩ − Resistance ratio R2/R1 0.8 1 1.2 − − fT − 250 − MHz Symbol Min. Typ. Max. Unit VI(off) − − −0.3 VI(on) −1.4 − − VO(on) − −0.1 −0.3 V II − − −0.88 mA VI= −5V Transition frequency VCE=10V, IE=−5mA, f=100MHz ∗ ∗ Transition frequency of the device DTr 2 Parameter Input voltage Output voltage Input current V Conditions VCC= −5V, IO= −100µA VO= −0.3V, IO= −1mA IO/II= −5mA / −0.25mA IO(off) − − −0.5 µA VCC= −50V, VI=0V DC current gain GI 68 − − − VO= −5V, IO= −5mA Input resistance R1 7 10 13 kΩ − Resistance ratio R2/R1 3.7 4.7 5.7 − − fT − 250 − MHz Output current Transition frequency VCE= −10V, IE=5mA, f=100MHz ∗ ∗ Transition frequency of the device Rev.B 2/4 EMD4 / UMD4N Transistors zElectrical characteristic curves DTr1 (NPN) 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 Ta=−40°C 25°C 100°C 5 2 1 500m 200µ 100µ 50µ 20µ 10µ 5µ 500µ 1m 2m 5m 10m 20m 2µ 1µ 0 50m 100m 200 100 Ta=100°C 25°C −40°C 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 1 100µ 200µ 3.0 OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) Fig.1 Input voltage vs. output current (ON characteristics) Fig.2 Output current vs. input voltage (OFF characteristics) 1 VO=5V 500 2m Ta=100°C 25°C 1m −40°C 500µ 200m 100m 100µ 200µ 1k VCC=5V DC CURRENT GAIN : GI 100 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO(on) (V) 500m Ta=100°C 25°C −40°C 200m 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current DTr2 (NPN) OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) −20 −10 −5 −2 −10m −5m VO=−0.3V −50 Ta=−40°C 25°C 100°C −1 −500m −200m −100m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) Fig.5 Input voltage vs. output current (ON characteristics) VCC=−5V 1k 500 −2m −1m −500µ DC CURRENT GAIN : GI −100 Ta=100°C 25°C −40°C −200µ −100µ −50µ −20µ −10µ −5µ −2µ −1µ 0 200 VO=−5V Ta=100°C 25°C −40°C 100 50 20 10 5 2 −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 INPUT VOLTAGE : VI(off) (V) Fig.6 Output current vs. input voltage (OFF characteristics) 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) Fig.7 DC current gain vs. output current Rev.B 3/4 EMD4 / UMD4N Transistors −1 lO/lI=20 OUTPUT VOLTAGE : VO(on) (V) −500m −200m −100m Ta=100°C 25°C −40°C −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) Fig.8 Output voltage vs. output current Rev.B 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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