2SC5662 / 2SC4726 / 2SC4083 /2SC3838K Transistors High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 / 2SC4083 / 2SC3838K zExternal dimensions (Unit : mm) zFeatures 1) High transition frequency. (Typ. fT= 3.2GHz) 2) Small rbb’⋅Cc and high gain. (Typ. 4ps) 3) Small NF. 2SC5662 0.2 1.2 0.32 0.8 1.2 (3) 0.2 (1)(2) 0.22 0.4 0.4 zPackaging specifications and hFE VMT3 NP EMT3 NP UMT3 NP SMT3 NP AD T2L AD TL 1D T106 AD T146 8000 3000 3000 3000 2SC4726 (3) (2) (1) 0.2 zAbsolute maximum ratings (Ta=25°C) 2SC4083 0.2 Limits Unit Collector-base voltage Collector-emitter voltage VCBO VCEO 20 11 V V Emitter-base voltage Collector current VEBO IC 3 50 0.15 0.2 V mA 2SC5662, 2SC4726 2SC4083, 2SC3838K PC Tj 150 °C Storage temperature Tstg −55 to +150 °C (1) Emitter (2) Base (3) Collector 1.0 2.0 0.9 0.2 0.3 0.7 (3) (1) (2) W Junction temperature 0.15 0.5 0.5 1.25 Symbol 0.55 0.3 ROHM : EMT3 EIAJ : SC-75A Collector power dissipation 0.7 1.6 0.1Min. Package hFE Marking 0.1Min. 2SC3838K 1.6 2SC4083 0.8 2SC4726 2.1 2SC5662 Parameter (1) Base (2) Emitter (3) Collector ROHM : VMT3 Type Code Basic ordering unit (pieces) 0.13 0.5 0.8 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 0.15 1.3 (1) Emitter (2) Base (3) Collector Each lead has same dimensions 2.9 2SC3838K 1.1 0.4 0.8 1.6 2.8 (3) (2) ROHM : SMT3 EIAJ : SC-59 0.15 1.9 0.3Min. (1) 0.95 0.95 (1) Emitter (2) Base (3) Collector Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO 20 11 3 − − − − − − V V Collector cutoff current ICBO Emitter cutoff current IEBO − − VCE(sat) − − − − 0.5 0.5 0.5 µA µA V hFE 56 − 180 − fT Cob 1.4 3.2 0.8 rbb'⋅Cc NF − 4 − 1.5 12 GHz pF ps − 3.5 − dB Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage DC current transfer ratio 2SC5662, 2SC4726, 2SC4083, 2SC3838K Transition frequency Output capacitance Collector-base time constant Noise factor − V Conditions IC = 10µA IC = 1mA IE = 10µA VCB = 10V VEB = 2V IC/IB = 10mA/5mA VCE/IC = 10V/5mA VCE = 10V , IE = −10mA , f = 500MHz VCB = 10V , IE = 0A , f = 1MHz VCB = 10V , IC = 10mA , f = 31.8MHz VCE = 6V , IC = 2mA , f = 500MHz , Rg = 50Ω Rev.B 1/2 2SC5662 / 2SC4726 / 2SC4083 /2SC3838K Transistors Ta=25°C VCE=10V 200 100 50 20 10 0.1 0.2 0.5 1 2 5 10 20 50 5.0 500 Ta=25°C 200 100 50 IC/IB=10 20 IC/IB=2 10 0.1 0.2 1.0 Cob Cre 0.5 0.2 0.1 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.4 Capacitance vs. reverse bias voltage 2 5 10 20 50 0.5 0.2 50 −0.5 −1 −2 Ta=25°C VCE=10V −5 −10 −20 −50 EMITTER CURRENT : IE (mA) Fig.3 Gain bandwidth product vs. emitter current Ta=25°C VCE=10V f=31.8MHz Ta=25°C VCE=6V f=500MHz 20 NOISE FIGURE : NF (dB) 2.0 rbb' (ps) Ta=25°C f=1MHz IE=0A 1 1.0 0.1 −0.1 −0.2 Fig.2 Collector-emitter saturation voltage vs. collector current COLLECTOR TO BASE TIME CONSTANT : Cc OUTPUT CAPACITANCE : Cob (pF) FEEDBACK CAPACITANCE : Cre (pF) 5.0 0.5 2.0 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.1 DC current gain vs. collector current TRANSITIONFREQUENCY : fT (GHz) DC CURRENT TRANSFER RATIO : hFE 500 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) zElectric characteristics curves 10 5.0 20 10 2.0 1.0 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) Fig.5 Collector to base time constance vs. collector current 0 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) Fig.6 Noisfactor vs. collector current characteristics Rev.B 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1