DTC125TUA / DTC125TKA / DTC125TSA Transistors Digital transistor (built-in resistor) DTC125TUA / DTC125TKA / DTC125TSA 0.1to0.4 (1) Emitter(Source) (2) Base(Gate) (3) Collector(Drain) Junction temperature Tj Tstg Storage temperature 200 Pc 300 150 −55 ∼ +150 (1) (2) 0.95 0.95 1.9 2.9 2.8 0.3to0.6 1.1 VEBO IC 1.6 0.8 Emitter-base voltage Collector current Collector power DTC125TUA / DTC125TKA dissipation DTC125TSA V V V mA 0to0.1 Unit 50 50 5 100 (3) 0.4 Limits VCBO VCEO 2.0 Each lead has same dimensions ROHM : UMT3 EIAJ : SC-70 0.15 Symbol 1.3 0to0.1 0.15 0.2 2.1 !Absolute maximum ratings (Ta = 25°C) Parameter 0.9 (1) (2) (3) 0.3 1.25 DTC125TKA Collector-base voltage Collector-emitter voltage 0.65 0.65 DTC125TUA 0.7 !External dimensions (Units : mm) !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated. 3) Only the on / off conditions need to be set for operation, making device design easy. 4) Higher mounting densities can be achieved. Each lead has same dimensions mW (1) Emitter(Source) (2) Base(Gate) (3) Collector(Drain) ROHM : SMT3 EIAJ : SC-59 °C °C DTC125TSA 2 3 4 DTC125TUA DTC125TKA DTC125TSA UMT3 0A T106 3000 SMT3 0A T146 3000 SPT − (15Min.) Part No. Package Marking Packaging code Basic ordering unit (pieces) 3Min. !Package, marking, and packaging specifications 0.45 0.5 0.45 2.5 TP 5000 5 (1) (2) (3) Taping specifications (1) Emitter (2) Collector (3) Base ROHM : SPT EIAJ : SC-72 !Electrical characteristics (Ta = 25°C) !Circuit schematic Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage BVCBO BVCEO − − − − V V IC = 50µA IC = 1mA Emitter-base breakdown voltage Collector cutoff current BVEBO 50 50 5 − − V IE = 50µA ICBO − − µA VCB = 50V IEBO − 250 0.5 0.5 0.3 600 200 250 260 − kΩ MHz DC current transfer ratio hFE − − 100 Input resistance R1 140 Transition frequency fT − Emitter cutoff current Collector-emitter saturation voltage ∗ Transition frequency of the device. VCE(sat) − µA V − Conditions C B R1 E VEB = 4V E : Emitter C : Collector B : Base IC = 0.5mA , IB = 0.05mA IC = 1mA , VCE = 5V − VCE = 10V , IE = -5mA , f = 100MHz ∗