2SB1710 Transistors General purpose amplification (−30V, −1A) 2SB1710 zExternal dimensions (Units : mm) zApplication Low frequency amplifier Driver 2.8 Limits −30 −30 −6 −1 −2 500 150 −55~+150 0.4 (3) (1) 0.85 0.7 1.0MAX (2) Each lead has same dimensions Abbreviated symbol : EW (1) Base (2) Emitter (3) Collector zPackaging specifications zAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICP PC Power dissipation Junction temperature Tj Range of storage temperature Tstg 0~0.1 0.3∼0.6 ROHM :TSMT3 Parameter Collector-base voltage 1.9 0.16 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ −350mV at Ic = −500mA / IB = −25mA 0.95 0.95 2.9 1.6 Unit V V V A A∗1 mW ∗2 °C °C Package Type Code Basic ordering unit (pieces) Taping TL 3000 2SB1710 ∗1 Single pulse, PW=1ms ∗2 Each Terminal Mounted on a Recommended zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −30 −30 −6 − − − 270 − − Typ. − − − − − −150 − 320 7 Max. − − − −100 −100 −350 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=−10µA IC=−1mA IE=−10µA VCB=−30V VEB=−6V IC=−500mA, IB=−25mA VCE=−2V, IC=−100mA ∗ VCE=−2V, IE=100mA, f=100MHz VCB=−10V, IE=0A, f=1MHz ∗ ∗ Pulsed 1/2 2SB1710 Transistors DC CURRENT GAIN : hFE Ta=25°C Ta=−40°C 100 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current VCE=−2V Pulsed Ta=100°C Ta=25°C 0.1 Ta=−40°C 0.01 0.001 0 0.5 1 Ta=100°C Ta=25°C Ta=−40°C VCE(sat) 0.01 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Ta=25°C Pulsed 1 IC/IB=20/1 0.1 IC/IB=50/1 IC/IB=10/1 0.01 0.001 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) 1000 1000 Ta=25°C VCE=−2V f=100MHz 0.1 Ta=25°C VCE=−5V IC/IB=20/1 tstg 100 Fig.5 Gain bandwidth product vs. emitter current Fig.4 Grounded emitter propagation characteristics 10 Fig.3 Collector-emitter saturation voltage vs. collector current EMITTER CURRENT : IE (A) BASE TO EMITTER CURRENT : VBE (V) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) VBE(sat) Ta=−40°C Ta=25°C Ta=100°C 0.1 10 0.01 1.5 100 1 IC/IB=20/1 Pulsed Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (A) 1 10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=−2V Pulsed Ta=100°C SWITCHING TIME : (ns) 1000 BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) zElectrical characteristic curves 1 100 tf tr tdon 10 1 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.6 Switching time Ta=25°C IC=0A f=1MHz Cib Cob 10 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0