1N4148 / 1N4448 150mA Axial Leaded Fast Switching Diode Features · · · Fast Switching Speed General Purpose Rectification Silicon Epitaxial Planar Construction B A A · · · · · C D Mechanical Data Case: DO-35 Leads: Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Marking: Type Number Weight: 0.13 grams (approx.) DO-35 Dim Min A 25.40 Max ¾ B ¾ 4.00 C ¾ 0.60 D ¾ 2.00 All Dimensions in mm Maximum Ratings and Electrical Characteristics Characteristic Symbol 1N4148 Unit 100 V VRRM VRWM VR 75 V VR(RMS) RMS Reverse Voltage 1N4448 VRM Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage @ TA = 25°C unless otherwise specified 53 V Forward Continuous Current (Note 1) IFM Average Rectified Output Current (Note 1) IO 150 mA IFSM 1.0 2.0 A Pd 500 1.68 mW mW/°C RqJA 300 K/W Tj , TSTG -65 to +175 Non-Repetitive Peak Forward Surge Current @ t = 1.0s @ t = 1.0ms Power Dissipation (Note 1) Derate Above 25°C Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Characteristic 300 500 mA °C Symbol Min Max Unit VFM ¾ 0.62 ¾ 1.0 0.72 1.0 V IF = 10mA IF = 5.0mA IF = 100mA Maximum Peak Reverse Current IRM ¾ 5.0 50 30 25 mA mA mA nA VR = 75V VR = 70V, Tj = 150°C VR = 20V, Tj = 150°C VR = 20V Capacitance Cj ¾ 4.0 pF VR = 0, f = 1.0MHz Reverse Recovery Time trr ¾ 4.0 ns IF = 10mA to IR =1.0mA VR = 6.0V, RL = 100W Maximum Forward Voltage 1N4148 1N4448 1N4448 Notes: 1. Valid provided that device terminals are kept at ambient temperature. 1 of 2 Test Condition 10,000 100 IR, LEAKAGE CURRENT (nA) IF, INSTANTANEOUS FORWARD CURRENT (mA) 1000 10 1.0 0.1 1000 100 10 VR = 20V 1 0.01 0 1 2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Forward Characteristics 2 of 2 0 100 200 Tj, JUNCTION TEMPERATURE (°C) Fig. 2, Leakage Current vs Junction Temperature