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RB531S-30
100mA Surface Mount Schottky Barrier Diode
Features
· Ultra small mold type.(EMD2)
· Low V F
L
· High reliability
C
H
Mechanical Data
· Case: Molded Plastic
M
A
K
B
SOD-523
Dim
Min
Max
A
0.25
0.35
B
0.70
0.90
C
1.50
1.70
H
1.10
1.30
K
0.55
0.65
L
0.10
0.30
M
0.10
0.12
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Parameter
Reverse voltage(DC)
Average rectified forward current
Forward current surge peak(60Hz/1cyc)
Junction temperature
Storage temperature
Parameter
Forward voltage
Reverse current
Symbol
VF
IR
@ TA = 25°C unless otherwise specified
Limits
Symbol
VR
Io
IFSM
Tj
Tstg
Min.
-
30
100
500
125
-40to+125
Typ.
-
Max.
0.35
Unit
V
10
μA
1of3
Unit
V
mA
mA
C
C
Conditions
IF=10mA
VR=10V
100
Ta=125C
100
Ta=75C
10
Ta=-25C
1
Ta=25C
0.1
0.01
0.001
REVERSE CURRENT : IR(A)
1000
Ta=75C
100
Ta=25C
10
1
Ta=-25C
0.1
0.01
100
200
300
400
500
600
0
10
FORWARD VOLTAGE : V F(mV)
VF-IF CHARACTERISTICS
1
0
270
AVE : 270.2mV
260
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
280
20
15
10
AVE : 2.037A
5
0
VF DISPERSION MAP
PEAK SURGE
FORWARD CURRENT : IFSM(A)
1cyc
Ifsm
8.3ms
10
AVE : 3.90A
5
0
8.3ms
8.3ms
1cyc
5
10
Mounted on epoxy board
IF=100mA
FORWARD POWER
DISSIPATION : Pf(W)
100
1
14
13
12
11
10
Ifsm
t
5
1
10
100
0.1
0.08
0.08
D=1/2
DC
0.06
Sin(=180)
0.04
0.06
D=1/2
0.04
DC
Sin(=180)
0.02
time
300s
0.1
AVE : 17.34pF
15
TIME : t(ms)
IFSM-t CHARACTERISTICS
0.02
0.01
16
100
0.1
Rth(j-c)
1ms
17
NUMBER OF CYCLES
IFSM -CYCLE CHARACTERISTICS
IFSM DISRESION MAP
IM=10mA
Ta=25C
f=1MHz
VR=0V
n=10pcs
18
0
1
Rth(j-a)
20
10
Ifsm
0
1000
15
Ct DISPERSION MAP
10
15
10
19
IR DISPERSION MAP
20
5
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
20
Ta=25C
VR=10V
n=30pcs
25
REVERSE CURRENT : IR(A)
FORWARD VOLTAGE : VF(mV)
290
10
0.001
10
30
Ta=25C
VF=10mA
n=30pcs
250
TRANSIENT
THAERMAL IMPEDANCE : Rth (C/W)
30
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
300
PEAK SURGE
FORWARD CURRENT : IFSM(A)
20
f=1MHｚ
PEAK SURGE
FORWARD CURRENT : IFSM(A)
0
REVERSE POWER
DISSIPATION : PR (W)
FORWARD CURRENT : IF(mA)
Ta=125C
CAPACITANCE BETWEEN TERMINALS : Ct(pF)
10000
1000
10
TIME : t(s)
Rth-t CHARACTERISTICS
0
0
100
1000
0
0.1
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
2of3
0.2
0
10
20
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
30
0.3
0.3
Io
0V
VR
t
0.2
DC
T
Io
0A
D=t/T
VR=15V
Tj=125C
D=1/2
0.1
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
0A
0V
VR
t
0.2
DC
T
D=t/T
VR=15V
Tj=125C
D=1/2
0.1
Sin(=180)
Sin(=180)
0
0
0
25
50
75
100
AMBIENT TEMPERATURE : Ta(C)
Derating Curve"(Io-Ta)
125
0
25
50
75
100
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
3of3
125