1S101A-LS101C 30mA Surface Mount Schottky Barrier Diode Features · Integrated protection ring against static discharge · Low capacitance · Low leakage current · Low forward voltage drop · Lead (Pb)-free component · Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC C B A SOD-80 Dim Min Max A 3.30 3.70 B 1.30 1.60 C 0.28 0.50 Mechanical Data · Case:SOD-80 Glass case · Weight: approx. 34 mg All Dimensions in mm · Cathode Band Color: Black · Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Maximum Ratings and Electrical Characteristics Parameter Test condition Reverse voltage @ TA = 25°C unless otherwise specified Part Symbol Value Unit LS101A VR 60 V LS101B VR 50 V LS101C Peak forward surge current tp = 10 µs Repetitive peak forward current Forward continuous current Parameter Reverse Breakdown Voltage Leakage current Forward voltage drop Test condition IR = 10 µA VR = 50 V 40 V 2 A IFRM 150 mA IF 30 mA Part Symbol Min LS101A V(BR)R 60 Typ. Max Unit V V LS101B V(BR)R 50 LS101C V(BR)R 40 LS101A IR 200 nA V VR = 40 V LS101B IR 200 nA VR = 30 V LS101C IR 200 nA IF = 1 mA LS101A VF 410 mV LS101B VF 400 mV LS101C VF 390 mV LS101A VF 1000 mV LS101B VF 950 mV LS101C VF 900 mV LS101A CD 2.0 pF LS101B CD 2.1 pF LS101C CD 2.2 pF IF = 15 mA Diode capacitance VR IFSM VR = 0 V, f = 1 MHz 1 of 2 100 CD - Diode Capacitance (pF) 2.0 IR = Reverse Current (µA) Tj = 125 °C 10 Tj = 100 °C Tj = 75 °C 1 Tj = 50 °C 0.1 Tj = 25 °C Tj = 25 °C 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.01 0 5 10 15 20 25 30 35 40 45 50 0 VR - Reverse Voltage (V) 16204 16205 Figure 1. Reverse Current vs. Reverse Voltage IF = Forward Current (mA) 10 15 20 25 30 35 40 45 50 VR - Reverse Voltage (V) Figure 2. Diode Capacitance vs. Reverse Voltage 10.00 1.00 0.10 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 16206 5 VF - Forward Voltage (V) Figure 3. Forward Current vs. Forward Voltage 2 of 2