BAT85S 200mA Surface Mount Schottky Barrier Diodes Features · Integrated protection ring against static discharge · Very low forward voltage · Lead (Pb)-free component · Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC B A A C D DO-35 Dim Min A 25.40 Max ¾ Mechanical Data B ¾ 4.00 · Case: DO35 Glass case · Weight: approx. 125 mg C ¾ 0.60 D ¾ 2.00 All Dimensions in mm · Cathode Band Color: black · Packaging Codes/Options: TR/10 k per 13" reel (52 mm tape), 50 k/box TAP/10 k per Ammopack (52 mm tape), 50 k/box Maximum Ratings and Electrical Characteristics Parameter Test condition Reverse voltage @ TA = 25°C unless otherwise specified Symbol Value Unit VR 30 V Peak forward surge current tp ≤ 10 ms IFSM 5 A Repetitive peak forward current tp ≤ 1 s IFRM 300 mA IF 200 mA IFAV 200 mA Forward continuous current Average forward current PCB mounting, l = 4 mm; VRWM = 25 V, Tamb = 50 °C Parameter Forward voltage Max Unit IF = 0.1 mA Test condition Symbol VF Min Typ. 240 mV IF = 1 mA VF 320 mV IF = 10 mA VF 400 mV IF = 30 mA VF 500 mV IF = 100 mA VF 800 mV Reverse current VR = 25 V IR 2 µA Diode capacitance VR = 1 V, f = 1 MHz CD 10 pF Reverse Recovery Time IF = 10 mA to IR = 10 mA to iR = 1 mA trr 5 ns 1 of 2 VR = 30 V 180 IF - Forward Current (mA) PR - Reverse Power Dissipation (mW) 1000 200 160 140 RthJA = 540 kW 120 PR - Limit at 100 % VR 100 80 PR - Limit at 80 % VR 60 40 Tj = 25 °C 10 1 20 0.1 0 25 50 75 100 125 0 150 Tj - Junction Temperature (°C) 15822 0.5 1.0 1.5 VF - Forward Voltage (V) 15824 Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature Figure 3. Forward Current vs. Forward Voltage 1000 10 CD - Diode Capacitance (pF) IR - Reverse Current (µA) Tj = 125 °C 100 VR = VRRM 100 10 f = 1 MHz 9 8 7 6 5 4 3 2 1 1 0 25 15823 50 75 100 125 150 0.1 Tj - Junction Temperature (°C) 15825 1 10 100 VR - Reverse Voltage (V) Figure 4. Diode Capacitance vs. Reverse Voltage Figure 2. Reverse Current vs. Junction Temperature 2 of 2