RB441Q-40 0.1A Axial Leaded Schottky Barrier Diode Features · Glass sealed envelope for high reliability. (MSD) · Small pitch enables insertion on PCBs. · Low VF.(VF=0.45V Typ. at 100mA) B A A C D DO-35 Mechanical Data · Case: DO-35 Glass Case · Weight: approx. 0.11g Dim Min Max A 25.40 ¾ B ¾ 4.00 C ¾ 0.60 D ¾ 2.00 All Dimensions in mm Maximum Ratings and Electrical Characteristics Parameter Symbol Limits Unit 40 V VR 40 V IO 0.1 A Peak reverse voltage VRM DC reverse voltage Mean rectifying current Peak forward surge current @ TA = 25°C unless otherwise specified IFSM 1 Junction temperature Tj 125 °C Storage temperature Tstg −40~+125 °C Parameter A Symbol Min. Typ. Max. Unit Forward voltage VF1 − − 0.34 V IF=10mA Forward voltage VF2 − − 0.55 V IF=100mA Reverse current IR − − 100 µA VR=40V Capacitance between terminals CT − 6.0 − pF VR=10V, f=1MHz Note) ESD sensitve product handling required. 1 of 2 Conditions 10m Typ. pulse measurement REVERSE CURRENT : IR (A) 100m 10m Ta =1 75 25°C °C 25 ° −2 C 5 °C FORWARD CURRENT : IF (A) 1 1m 100µ 10µ 0 0.1 0.2 0.3 0.4 0.5 0.6 Typ. pulse measurement 1m Ta=125°C 100µ 75°C 10µ 25°C 1µ 0.1µ 0 0.7 5 FORWARD VOLTAGE : VF (V) CAPACITANCE BETWEEN TERMINALS : CT (pF) FORWARD SURGE CURRENT : IF Surge (A) 10 100 20 25 30 35 40 Fig. 2 Reverse characteristics P=50% 1 15 REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10 1000 100 10 1 0 1000 5 10 15 20 PULSE WIDTH (mS) Fig. 3 Capacitance between terminals characteristics Fig. 4 Forward surge current characteristics 100 0.4 Sine wave (Tj=25°C) Io CURRENT (%) POWER DISSIPATION : PF (W) 0.5 0.3 DC (Tj=25°C) 0.2 0.1 0 25 REVERSE VOLTAGE : VR (V) 80 60 40 20 0 0 0.5 25 50 75 100 125 AMBIENT TEMPERATURE : Ta (°C) AVERAGE FORWARD CURRENT : IO (A) Fig. 6 Derating curve (mounting on glass epoxy PCBs) Fig. 5 Mean rectifying current characteristics 2of2