BAT85 0.2A Axial Leaded Small Signal Schottky Diodes Features · For general purpose applications · This diode features very low turn-on voltage B A and fast switching. These devices are protected A by a PN junction guard ring against excessive voltage, such as electrostatic discharges C D DO-35 Mechanical Data Dim Min Max · Case:JEDEC DO--35,glass case A 25.40 ¾ · Polarity: Color band denotes cathode end B ¾ 4.00 · Weight: Approx. 0.13 gram C ¾ 0.60 D ¾ 2.00 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Symbols VR Continuous reverse voltage Forw ard continuous current Peak forw ard current Surge forw ard current Pow er dissipation @ @ IF TA=25 IFM TA =25 @ IFSM tp<1s,TA=25 P tot @ TA=65 Value UNITS 30.0 V 200 1) mA 300 1) mA 600 1) mA 200 1) mW Junction temperature TJ 125 Ambient operating temperature range TA c-55 ---+ 125 TSTG c-55 ---+ 150 Storage temperature range Reverse breakdow n voltage Symbols Min. VR 30.0 Typ. Max. V Forw ard voltage Pulse test tp<300 s, <2% @ IF=0.1mA @ IF=1mA @ IF=10mA @ IF=30mA @ IF=100mA VF Leakage current V R=25V IR 2.0 Junction capacitance at V R=1V,f=1MHz CJ 10 Reverse recovery time @ IF=10mA,IR=10mA,IR=1mA trr 5 Thermal resistance junction to ambient 0.24 0.32 0.4 0.5 0.8 RθJA 1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature 1 of 2 UNITS 430 V V V V V A pF ns 1) /W FIG.1-- ADMISSIBLEPOWERDISSIPATIONVS. AMBIENT FIG. 2--TYPICAL INSTANTANEOUS FORWORD TEMPERATURE CHARACTERISTICS Forward current (mA) Ptot -Power ( mW ) 1000 200 100 TJ=125 100 T J= 25 10 1 T J= -4 0 0 .1 0 .0 1 0 100 0 200 TA -Ambient temperature( ) 0 .6 0 .8 1 .0 1 .2 VF -Forward Voltage (V) FIG. 3 -- TYPICAL REVERSE CHARACTERISTICS FIG.4 -- TYPICAL JUNCTION CAPACITANCE 14 Junction capacitance ( pF ) 1000 Reverse leakage current ( A) 0 .2 0 .4 T J= 1 2 5 100 100 10 75 50 1 25 0 .1 12 10 8 6 4 2 0 0 .0 1 0 5 10 15 20 25 30 5 10 15 20 25 VR -Reverse voltage (V) VR -Reverse voltage (V) 2of2 30