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BAT81S-BAT83S
150mA Surface Mount Small Signal Schottky Diodes
Features
· Integrated protection ring against static
discharge
· Low capacitance
· Low leakage current
· Low forward voltage drop
· Very low switching time
· Lead (Pb)-free component
· Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
B
A
A
C
D
DO-35
Dim
Min
A
25.40
Max
¾
Mechanical Data
B
¾
4.00
· Case: DO35 Glass case
· Weight: approx. 125 mg
C
¾
0.60
D
¾
2.00
All Dimensions in mm
· Cathode Band Color: black
· Packaging Codes/Options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Maximum Ratings and Electrical [email protected] TA = 25°C unless otherwise specified
Parameter
Test condition
Reverse voltage
Part
Symbol
Value
Unit
BAT81S
VR
40
V
BAT82S
VR
50
V
BAT83S
VR
60
V
IF
Forward continuous current
30
mA
Peak forward surge current
tp ≤ 10 ms
IFSM
500
mA
Repetitive peak forward current
tp ≤ 1 s
IFRM
150
mA
Parameter
Max
Unit
IF = 0.1 mA
VF
330
mV
IF = 1 mA
VF
410
mV
IF = 15 mA
VF
1000
mV
Reverse current
VR = VRmax
IR
200
nA
Diode capacitance
VR = 1 V, f = 1 MHz
CD
1.6
pF
Forward voltage
Test condition
Symbol
1 of 2
Min
Typ.
PR - Reverse Power Dissipation (mW)
14
1000
VR = 60 V
I F - Forward Current (mA)
12
RthJA = 540 K/W
10
8
6
Limit at
PPRR -- Limit
at100
100%%VRVR
4
PR - Limit at 80 % VR
100
Tj = 125 °C
10
Tj = 25 °C
1
0.1
2
0.01
0
25
50
75
100
125
0
150
Tj - Junction Temperature (°C)
15794
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
1
1.5
2.0
Figure 3. Forward Current vs. Forward Voltage
1000
2.0
CD - Diode Capacitance (pF)
V R = V RRM
I R - Reverse Current (µA)
0.5
V F - Forward Voltage (V)
15796
100
10
1
f = 1 MHz
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
25
15795
0
50
75
100
125
0.1
150
Tj - Junction Temperature (°C)
15797
Figure 2. Reverse Current vs. Junction Temperature
1
10
100
VR - Reverse Voltage (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
2 of 2