BAT81S-BAT83S 150mA Surface Mount Small Signal Schottky Diodes Features · Integrated protection ring against static discharge · Low capacitance · Low leakage current · Low forward voltage drop · Very low switching time · Lead (Pb)-free component · Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC B A A C D DO-35 Dim Min A 25.40 Max ¾ Mechanical Data B ¾ 4.00 · Case: DO35 Glass case · Weight: approx. 125 mg C ¾ 0.60 D ¾ 2.00 All Dimensions in mm · Cathode Band Color: black · Packaging Codes/Options: TR/10 k per 13" reel (52 mm tape), 50 k/box TAP/10 k per Ammopack (52 mm tape), 50 k/box Maximum Ratings and Electrical Characteristics@ TA = 25°C unless otherwise specified Parameter Test condition Reverse voltage Part Symbol Value Unit BAT81S VR 40 V BAT82S VR 50 V BAT83S VR 60 V IF Forward continuous current 30 mA Peak forward surge current tp ≤ 10 ms IFSM 500 mA Repetitive peak forward current tp ≤ 1 s IFRM 150 mA Parameter Max Unit IF = 0.1 mA VF 330 mV IF = 1 mA VF 410 mV IF = 15 mA VF 1000 mV Reverse current VR = VRmax IR 200 nA Diode capacitance VR = 1 V, f = 1 MHz CD 1.6 pF Forward voltage Test condition Symbol 1 of 2 Min Typ. PR - Reverse Power Dissipation (mW) 14 1000 VR = 60 V I F - Forward Current (mA) 12 RthJA = 540 K/W 10 8 6 Limit at PPRR -- Limit at100 100%%VRVR 4 PR - Limit at 80 % VR 100 Tj = 125 °C 10 Tj = 25 °C 1 0.1 2 0.01 0 25 50 75 100 125 0 150 Tj - Junction Temperature (°C) 15794 Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature 1 1.5 2.0 Figure 3. Forward Current vs. Forward Voltage 1000 2.0 CD - Diode Capacitance (pF) V R = V RRM I R - Reverse Current (µA) 0.5 V F - Forward Voltage (V) 15796 100 10 1 f = 1 MHz 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.1 25 15795 0 50 75 100 125 0.1 150 Tj - Junction Temperature (°C) 15797 Figure 2. Reverse Current vs. Junction Temperature 1 10 100 VR - Reverse Voltage (V) Figure 4. Diode Capacitance vs. Reverse Voltage 2 of 2