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RB051M-2Y
3.0A Surface Mount Schottky Barrier Diode
Features
C
H
· Small power mold type.（PMDU）
· Ultra Low V F
· High reliability
A
B
K
M
L
SOD-123
Dim
Min
Max
A
0.55 Typ
B
1.40
1.70
C
3.55
3.85
H
2.55
2.85
J
0.00
0.10
K
1.00
1.35
L
0.25
0.40
M
0.10
0.15
0
8°
α
All Dimensions in mm
Mechanical Data
· Case: Molded Plastic
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current(*1)
Forward current surge peak （60Hz・1cyc）
Junction temperature
Storage temperature
Parameter
Symbol
VF
Forward voltage
IR
Reverse current
(*1)Mounting on alumina board. Tc=95C　Max.
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Min.
-
1of3
Limits
20
20
3
30
125
-40 to +125
Typ.
Max.
0.46
-
0.9
Unit
V
V
A
A
C
C
Unit
V
mA
Conditions
IF=3A
VR=20V
10
Ta=125C
Ta=150C
10000000
1000
Ta=125C
f=1MHz
Ta=75C
Ta=25C
Ta=-25C
0.1
0.01
100000
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=150C
1
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(A)
1000000
Ta=75C
10000
1000
Ta=25C
100
Ta=-25C
10
100
10
1
0.001
1
0.1
0
100
200
300
400
500
0
5
10
15
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
4000
3500
390
3000
2500
380
2000
1500
370
AVE:382.2mV
AVE:270.0uA
1000
460
450
440
AVE:454.2pF
430
420
410
400
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
100
1cyc
8.3ms
100
AVE:48.0A
50
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
90
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
RESERVE RECOVERY TIME:trr(ns)
30
150
470
0
200
15
10
5
0
20
Ta=25C
f=1MHz
VR=0V
n=10pcs
480
500
360
15
490
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
400
10
500
Ta=25C
VR=30V
n=30pcs
4500
REVERSE CURRENT:IR(uA)
FORWARD VOLTAGE:VF(mV)
Ta=25C
IF=3A
n=30pcs
5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
5000
410
PEAK SURGE
FORWARD CURRENT:IFSM(A)
0
20
AVE:9.8ns
Ifsm
80
70
8.3ms
8.3ms
1cyc
60
50
40
30
20
10
0
0
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
IFSM DISPERSION MAP
100
Mounted on alumina board
100
100
IM=10mA
IF=0.5A
t
70
60
50
40
30
20
10
0
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
time
300us
10
Rth(j-c)
1
0.1
0.001
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (C/W)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
80
1ms
D=1/2
2
Rth(j-a)
90
1.5
Sin(=180)
1
DC
0.5
0
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2of3
100
1000
0
1
2
3
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
4
5
0A
0V
t
100
5
Io
0A
VR
0V
D=t/T
VR=1V
Tj=150C
T
Io
VR
t
5
T
D=t/T
VR=1V
Tj=150C
90
70
60
D=1/2
50
40
DC
30
20
DC
4
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
80
D=1/2
3
2
Sin(=180)
1
DC
4
D=1/2
3
Sin(=180)
2
1
10
Sin(=180)
0
0
0
0
5
10
15
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
20
0
25
50
75
100
30
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
25
20
15
AVE:9.80kV
10
5
0
C=200pF
R=0
125
AMBIENT TEMPERATURE:Ta(C)
Derating Curve"(Io-Ta)
C=100pF
R=1.5k
ESD DISPERSION MAP
3of3
150
0
25
50
75
100
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
125
150