BAY135 200mA Axial Leaded Small Signal Switching Diodes Features · Silicon Planar Diode · Very low reverse current · Lead (Pb)-free component · Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC B A A C D Mechanical Data DO-35 · Case: DO35 Glass case · Weight: approx. 125 mg · Cathode Band Color: black · Packaging Codes/Options: TR/10 k per 13" reel (52 mm tape), 50 k/box TAP/10 k per Ammopack (52 mm tape), 50 k/box Dim Min A 25.40 Max ¾ B ¾ 4.00 C ¾ 0.60 D ¾ 2.00 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Symbol Value Unit Peak reverse voltage, non repetitive Parameter Test condition VRSM 140 V Repetitive peak reverse voltage VRRM 140 V VR 125 V Reverse voltage Peak forward surge current tp = 1 µs IFSM 2 A Average forward current f = 50 Hz IFAV 200 mA Parameter Max Unit Forward voltage IF = 100 mA Test condition VF 1000 mV Reverse current E ≤ 300 lx, VR IR 3 nA E ≤ 300 lx, VR, Tj = 125 °C IR 0.5 µA E ≤ 300 lx, VR = 60 V IR 1 nA 5 pF Breakdown voltage IR = 5 µA, tp/T = 0.01, tp = 0.3 ms Diode capacitance VR = 0, f = 1 MHz Symbol V(BR) CD 1of2 Min Typ. 140 V 10000 1000 I F - Forward Current (mA) I R - Reverse Current (nA) V R = VRRM 1000 Scattering Limit 100 10 1 Scattering Limit 10 1 0.1 0 94 9079 Tj = 25 °C 100 40 80 120 160 200 Tj - Junction Temperature (°C) 0 94 9078 Figure 1. Reverse Current vs. Junction Temperature 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage (V) Figure 2. Forward Current vs. Forward Voltage 2 of 2