TIGER ELECTRONIC CO.,LTD TO-92 A42 Plastic-Encapsulate Transistors TRANSISTOR (NPN) TO-92 FEATURES High voltage 1. EMITTER 2. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ RӨJA Thermal Resistance, junction to Ambient 200 ℃/mW RӨJC Thermal Resistance, unction to Case 83.3 ℃/mW 3. COLLECTOR 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 300 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 300 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=200V, IE=0 0.25 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA hFE(1) VCE=10V, IC=1mA 60 hFE(2) VCE=10V, IC=10mA 80 hFE(3) VCE=10V, IC=30mA 75 Collector-emitter saturation voltage VCE(sat) IC=20mA, IB=2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC=20mA, IB=2mA 0.9 V DC current gain fT Transition frequency VCE=20V, IC=10mA,f=30MHZ 250 50 MHz CLASSIFICATION OF hFE(2) Rank Range A B1 B2 C 80-100 100-150 150-200 200-250 Typical Characteristics A42