TOSHIBA TLP250

TLP250
TOSHIBA Photocoupler
GaAℓAs Ired & Photo−IC
TLP250
Transistor Inverter
Inverter For Air Conditioner
IGBT Gate Drive
Power MOS FET Gate Drive
Unit in mm
The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a
integrated photodetector.
This unit is 8−lead DIP package.
TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.
•
Input threshold current: IF=5mA(max.)
•
Supply current (ICC): 11mA(max.)
•
Supply voltage (VCC): 10−35V
•
Output current (IO): ±1.5A (max.)
•
Switching time (tpLH/tpHL): 0.5μs(max.)
•
Isolation voltage: 2500Vrms(min.)
•
UL recognized: UL1577, file No.E67349
•
Option(D4)
VDE Approved : DIN EN60747-5-2
TOSHIBA
11−10C4
Weight: 0.54 g(Typ.)
Maximum Operating Insulation Voltage : 890VPK
Highest Permissible Over Voltage
: 4000VPK
(Note):When a EN60747-5-2 approved type is needed,
Pin Configuration (top view)
Please designate “Option(D4)”
Truth Table
Input
LED
Tr1
Tr2
On
On
Off
Off
Off
On
1
8
2
7
3
6
4
5
1 : N.C.
2 : Anode
3 : Cathode
4 : N.C.
5 : GND
6 : V O (Output)
7 : VO
8 : VCC
Schmatic
I CC
VCC
8
IF
(Tr 1)
2+
7
VF
3IO
(Tr 2)
6
VO
VO
GND
A 0.1μF bypass capcitor must be
connected between pin 8 and 5 (See Note 5).
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TLP250
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
IF
20
mA
ΔIF / ΔTa
−0.36
mA / °C
IFPT
1
A
VR
5
V
Forward current
LED
Forward current derating (Ta ≥ 70°C)
Peak transient forward curent
(Note 1)
Reverse voltage
Junction temperature
“H”peak output current (PW ≤ 2.5μs,f ≤ 15kHz)
“L”peak output current (PW ≤ 2.5μs,f ≤ 15kHz)
125
°C
IOPH
−1.5
A
(Note 2)
IOPL
+1.5
A
(Ta ≤ 70°C)
Output voltage
Detector
Tj
(Note 2)
VO
(Ta = 85°C)
(Ta ≤ 70°C)
Supply voltage
35
24
35
VCC
(Ta = 85°C)
24
V
V
Output voltage derating (Ta ≥ 70°C)
ΔVO / ΔTa
−0.73
V / °C
Supply voltage derating (Ta ≥ 70°C)
ΔVCC / ΔTa
−0.73
V / °C
Tj
125
°C
f
25
kHz
Junction temperature
Operating frequency
(Note 3)
Operating temperature range
Topr
−20~85
°C
Storage temperature range
Tstg
−55~125
°C
Lead soldering temperature (10 s)
Tsol
260
°C
BVS
2500
Vrms
Isolation voltage (AC, 1 min., R.H.≤ 60%)
(Note 4)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1:
Pulse width PW ≤ 1μs, 300pps
Note 2:
Exporenential wavefom
Note 3:
Exporenential wavefom, IOPH ≤ −1.0A( ≤ 2.5μs), IOPL ≤ +1.0A( ≤ 2.5μs)
Note 4:
Device considerd a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted
together.
Note 5:
A ceramic capacitor(0.1μF) should be connected from pin 8 to pin 5 to stabilize the operation of the high
gain linear amplifier. Failure to provide the bypassing may impair the switching proparty. The total lead
length between capacitor and coupler should not exceed 1cm.
Recommended Operating Conditions
Characteristic
Input current, on
Input voltage, off
Supply voltage
Peak output current
Operating temperature
(Note6)
Symbol
Min
Typ.
Max
Unit
IF(ON)
7
8
10
mA
VF(OFF)
0
―
0.8
V
VCC
15
―
IOPH/IOPL
―
―
Topr
−20
25
30
20
±0.5
70
V
A
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Note 6: Input signal rise time(fall time)<0.5μs.
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TLP250
Electrical Characteristics (Ta = −20~70°C, unless otherwise specified)
Symbol
Test
Cir−
cuit
VF
―
ΔVF / ΔTa
Input reverse current
Input capacitance
Characteristic
Min
Typ.*
Max
Unit
IF = 10 mA , Ta = 25°C
―
1.6
1.8
V
―
IF = 10 mA
―
−2.0
―
mV / °C
IR
―
VR = 5V, Ta = 25°C
―
―
10
μA
CT
―
V = 0 , f = 1MHz , Ta = 25°C
―
45
250
pF
“H” level
IOPH
1
IF = 10 mA
V8−6 = 4V
−0.5
−1.5
―
“L” level
IOPL
2
IF = 0
V6−5 = 2.5V
0.5
2
―
“H” level
VOH
3
VCC1 = +15V, VEE1 = −15V
RL = 200Ω, IF = 5mA
11
12.8
―
“L” level
VOL
4
VCC1 = +15V, VEE1 = −15V
RL = 200Ω, VF = 0.8V
―
−14.2
−12.5
“H” level
ICCH
―
VCC = 30V, IF = 10mA
Ta = 25°C
―
7
―
VCC = 30V, IF = 10mA
―
―
11
VCC = 30V, IF = 0mA
Ta = 25°C
⎯
7.5
⎯
VCC = 30V, IF = 0mA
―
―
11
―
1.2
5
mA
0.8
―
―
V
10
―
35
V
―
1.0
2.0
pF
―
Ω
Input forward voltage
Temperature coefficient of
forward voltage
Output current
Output voltage
Supply current
“L” level
ICCL
―
Test Condition
VCC = 30V
(*1)
Threshold input
current
“Output
L→H”
IFLH
―
VCC1 = +15V, VEE1 = −15V
RL = 200Ω, VO > 0V
Threshold input
voltage
“Output
H→L”
VFHL
―
VCC1 = +15V, VEE1 = −15V
RL = 200Ω, VO < 0V
Supply voltage
VCC
―
Capacitance
(input−output)
CS
―
VS = 0 , f = 1MHz
Ta = 25℃
Resistance(input−output)
RS
―
VS = 500V , Ta = 25°C
R.H.≤ 60%
* All typical values are at Ta = 25°C
A
V
1×10
12
10
14
mA
(*1): Duration of IO time ≤ 50μs
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TLP250
Switching Characteristics (Ta = −20~70°C , unless otherwise specified)
Characteristic
Propagation
delay time
Symbol
L→H
Test
Cir−
cuit
Test Condition
Min
Typ.*
Max
―
0.15
0.5
―
0.15
0.5
―
―
―
―
―
―
VCM = 600V, IF = 8mA
VCC = 30V, Ta = 25°C
−5000
―
―
V / μs
VCM = 600V, IF = 0mA
VCC = 30V, Ta = 25°C
5000
―
―
V / μs
tpLH
H→L
tpHL
Output rise time
tr
Output fall time
tf
Common mode transient
immunity at high level
output
CMH
Common mode transient
immunity at low level
output
CML
5
IF = 8mA
VCC1 = +15V, VEE1 = −15V
RL = 200Ω
Unit
μs
6
All typical values are at Ta = 25°C
Test Circuit 1 : IOPH
Test Circuit 2 : IOPL
8
8
1
1
VCC
0.1μF
0.1μF
V8-6
IF
IOPH
4
VCC
A
A
IOPL
4
Test Circuit 3 : VOH
V6-5
Test Circuit 4 : VOL
8
8
1
1
VCC1
0.1μF
IF
VCC1
0.1μF
VF
RL
RL
V VOH
V
4
VOL
4
VEE1
VEE1
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TLP250
Test Circuit 5: tpLH, tpHL, tr tf
8
IF
IF
0.1μF
tr
tf
VCC1
VOH
VO
RL
VO
GND
VOL
tpLH
100Ω
80%
80%
tpHL
VEE1
Test Circuit 6: CMH, CML
8
1
IF
SW
A
0.1μF
VCC
B
VO
4
VCM
+
-
600V
VCM
90%
10%
tf
tr
CML = 480 (V)
tr (μs)
SW :A(IF=8mA)
CMH = 480 (V)
tf (μs)
CMH
VO
3V
SW :B(IF=0)
26V
CHL
CML(CMH) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output
voltage in the low (high) state.
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TLP250
IF – V F
Forward current IF
(mA)
50
30
ΔVF / ΔTa – IF
-2.6
Ta = 25 °C
Forward voltage temperature
coefficient ΔVF / ΔTa (mV / °C)
100
10
5
3
1
0.5
0.3
0.1
0.05
0.03
0.01
1.0
1.4
1.2
1.8
1.6
Forward voltage
-2.4
-2.2
-2.0
-1.8
-1.6
-1.4
0.1
2.0
1
0.3 0.5
VF (V)
3
Forward current
IF – Ta
5
30
10
IF (mA)
VCC – Ta
40
30
Allowable supply voltage VCC
Allowable forward current
IF (mA)
(V)
40
20
10
0
0
20
40
60
80
30
20
10
0
100
0
Ambient temperature Ta (°C)
20
40
60
80
100
Ambient temperature Ta (°C)
IOPH, IOPL – Ta
Allowable peak output current
IOPH, IOPL (A)
PW ≦ 2.5 μs, f ≦ 15 KHz
2
1
0
0
20
40
60
80
100
Ambient Temperature Ta (°C)
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TLP250
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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