PRELIMINARY DATA SHEET SILICON MMIC L-BAND DOWNCONVERTER UPC2734GR INTERNAL BLOCK DIAGRAM FEATURES • BROADBAND FREQUENCY OPERATION RF = 0.9 - 2.1 GHz, LO = 1.1 - 2.5 GHz MIX OUT • HIGH DYNAMIC RANGE: PSAT = +5 dBm Typical IF OUT 1 • LOW DISTORTION: RF IN IP3 = +11 dBm Typical IF OUT 2 • SWITCHABLE IF OUTPUTS • SMALL SSOP20 PACKAGE AMPLIFIER SWITCH • TAPE AND REEL PACKAGING AVAILABLE LO IN DESCRIPTION The UPC2734GR Silicon MMIC Frequency Downconverter is manufactured using the NESAT III MMIC process. The NESAT III process produces transistors with fT approaching 20 GHz. The device was designed specifically for use as a Receiver/Downconverter in wide-dynamic range DBS, compressed video or spread-spectrum receivers. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. SW LO OUT SW OUTPUT VSW ≤ 2 V* IF OUT 1 VSW ⊕ 3 V IF OUT 2 * If SW is left open, IF OUT1 is selected. ELECTRICAL CHARACTERISTICS1 (TA = 25° C, VCC = 5 V, PLO = -10 dBm) PART NUMBER PACKAGE OUTLINE SYMBOLS UNITS MIN TYP ICC Circuit Current (no signal) mA 28 40 fRF RF Frequency Range GHz 0.9 CG Conversion Gain fRF = 900 MHz, fIF = 402.8 MHz fRF = 900 MHz, fIF = 479.5 MHz fRF = 2.1 GHz, fIF = 402.8 MHz fRF = 2.1 GHz, fIF = 479.5 MHz dB dB dB dB 10 9 7.5 7 NF Noise Figure fRF = 900 MHz, fIF = 402.8 MHz fRF = 900 MHz, fIF = 479.5 MHz fRF = 2.1 GHz, fIF = 402.8 MHz fRF = 2.1 GHz, fIF = 479.5 MHz dB dB dB dB PSAT IP3 PARAMETERS AND CONDITIONS UPC2734GR S20 (SSOP20) Saturated Output Power (PIN = 0 dBm) fRF = 900 MHz, fIF = 402.8 MHz fRF = 900 MHz, fIF = 479.5 MHz fRF = 2.1 GHz, fIF = 402.8 MHz fRF = 2.1 GHz, fIF = 479.5 MHz dBm dBm dBm dBm SSB 3rd Order Intercept Point f1 = 900 MHz, f2 = 930 MHz f1 = 2.1 GHz, f2 = 2.13 GHz dBm dBm +1 +0.5 +1 0 MAX 52 2.1 13 12 10.5 10 16 15 13.5 13 9 10 14 15 11 13 17 18 +4 +3.5 +4 +3 +11 +10 Note: 1. Test Circuit. California Eastern Laboratories UPC2734GR ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS VCC Supply Voltage RECOMMENDED OPERATING CONDITIONS UNITS RATINGS V 6 SYMBOLS PARAMETERS UNITS MIN TYP MAX PD Power Dissipation2 mW 433 VCC Supply Voltage V 4.5 5.0 5.5 TOP Operating Temperature °C -40 to +85 TOP Operating Temperature °C -40 25 85 TSTG Storage Temperature °C -65 to +150 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB (TA = +75°C). ELECTRICAL CHARACTERISTICS (TA = 25° C, VCC = 5 V, Measured using Application Circuit) PART NUMBER PACKAGE OUTLINE SYMBOLS UPC2734GR S20 (SSOP20) PARAMETERS AND CONDITIONS UNITS MIN GHz 0.9 TYP fRF RF Frequency Range CG Conversion Gain fRF = 900 MHz, fIF = 402.8 MHz fRF = 900 MHz, fIF = 479.5 MHz fRF = 2.1 GHz, fIF = 402.8 MHz fRF = 2.1 GHz, fIF = 479.5 MHz dB dB dB dB 14 13.5 14.5 14 NF Noise Figure fRF = 900 MHz, fIF = 402.8 MHz fRF = 900 MHz, fIF = 479.5 MHz fRF = 2.1 GHz, fIF = 402.8 MHz fRF = 2.1 GHz, fIF = 479.5 MHz dB dB dB dB 9.7 9.7 11 11 dBm dBm dBm dBm +5 +4 +5 +5.5 dBm dBm +11 +11 PSAT MAX 2.1 Saturated Output Power (PIN = 0 dBm) fRF = 900 MHz, fIF = 402.8 MHz fRF = 900 MHz, fIF = 479.5 MHz fRF = 2.1 GHz, fIF = 402.8 MHz fRF = 2.1 GHz, fIF = 479.5 MHz IP3 SSB 3rd Order Intercept Point fRF1 = 900 MHz, fRF2 = 930 MHz fRF1 = 2.1 GHz, fRF2 = 2.13 GHz TYPICAL PERFORMANCE CURVES (VCC = 5 V, from Test Circuit) OUTPUT POWER vs. INPUT POWER AND TEMPERATURE CONVERSION GAIN vs. RF FREQUENCY AND TEMPERATURE 10 Output Power, POUT (dBm) Conversion Gain, CG (dB) 20 15 10 5 = -40 ˚C = +25 ˚C = +85 ˚C fIF = 479.5 MHz PIN = -30 dBm 0 0.1 0.2 0 -10 -20 = -40 ˚C = +25 ˚C = +85 ˚C fIF = 479.5 MHz fRF = 2.1 GHz -30 0.5 1 2 RF Frequency (GHz) 3 4 5 -30 -20 -10 0 Input Power, PIN (dBm) 10 UPC2734GR TYPICAL PERFORMANCE CURVES (VCC = 5 V, from Test Circuit) NOISE FIGURE vs. RF FREQUENCY AND TEMPERATURE THIRD ORDER INTERMODULATION vs. INPUT POWER AND TEMPERATURE 0 Noise Figure, NF (dB) Output Power, POUT (dBm) Intermodulation Distortion, IM3 (dBm) 20 POUT -20 IM3 -40 = -40 ˚C = +25 ˚C = +85 ˚C -60 15 10 = -40 ˚C = +25 ˚C = +85 ˚C 5 fIF = 479.5 MHz fRF = 2.1, 2.13 GHz fIF = 479.5 MHz PIN = 30 dBm 0 -30 -10 -20 0 0.1 +10 Input Power, PIN (dBm) 0.2 0.5 2 1 3 4 5 RF Frequency (GHz) CIRCUIT CURRENT vs. VOLTAGE AND TEMPERATURE 60 Circuit Current 50 40 30 20 10 = -40 ˚C = +25 ˚C = +85 ˚C 0 1 0 2 3 4 5 6 Supply Voltage, VCC (dBm) TYPICAL PERFORMANCE CURVES (VCC = 5 V, from Application Circuit) THIRD ORDER INTERMODULATION vs. INPUT POWER VCC = 5.0 V PIN = -30 dBm 0 POUT -10 -20 IM3 -30 -40 15 CG 20 15 10 NF 10 5 fIF = 479 MHz fIF = 402 MHz -50 0 -60 -30 -20 -10 Input Power Level (dBm) 0 0 5 1 2 RF Frequency (GHz) Noise Figure, NF (dB) 10 25 20 fRF = 2.1 - 2.13 GHz fIF = 479.5 MHz TA = 25˚C Conversion Gain, CG (dB) Output Power, POUT (dBm) Intermodulation Distortion, IM3 (dBm) 20 CONVERSION GAIN AND NOISE FIGURE vs. RF FREQUENCY UPC2734GR TYPICAL PERFORMANCE CURVES (TA = 25°C, VCC = 5 V unless otherwise specified, from Application Circuit) OSCILLATOR FREQUENCY DRIFT vs. SUPPLY VOLTAGE OSCILLATOR FREQUENCY BANDWIDTH -10 -20 Power Out, POUT (dBm) LO Frequency Drift (MHz) VCC = 4.5 V 1 VCC = 5.0 V 0 2.64 GHz 1.23 GHz 2 -1 VCC = 5.5 V -30 -40 -50 -60 -70 -2 VTU = 0 - 30 V 2.0 1.0 1.0 2.0 LO Frequency (GHz) LO Frequency (GHz) TUNING VOLTAGE vs. OSCILLATOR FREQUENCY Oscillator Frequency (GHz) 3.0 2.5 2.0 1.5 1.0 0 5 10 15 20 30 25 Tuning Voltage (V) TEST CIRCUIT VCC 150 µF 1000 pF OSC OUT 150 pF 100 Ω 100 Ω 150 pF OSC IN SW 150 µF 150 pF 20 19 17 18 16 14 15 13 11 REG OSC. AMP OSC BUFFER AMP 12 SW MIX IF AMP 1 2 3 4 5 6 7 8 9 10 IF OUT2 RF IN 150 pF 3300 pF 150 pF IF OUT1 150 pF 3.0 UPC2734GR APPLICATION CIRCUIT 150 pF OSC OUT HVU316 (HITACHI) VTU 2KΩ 5000 pF VCC 150 pF 3300 pF HVU316 5000 pF 1MΩ 150 Ω SW 3300pF 150 Ω 0.5 pF 5000 pF 1pF 3300 pF 4 pF 19 20 17 18 16 14 15 13 BUFFER AMP 11 REG OSC. AMP OSC 12 SW MIX IF AMP 1 2 3 4 5 6 7 8 9 10 3300 pF IF OUT2 150 pF RF IN 150 pF IF OUT1 150 pF OUTLINE DIMENSIONS (Units in mm) LEAD CONNECTIONS PACKAGE OUTLINE SSOP 20 20 11 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. NEC C2734G XXXXX N XXX = Lot/Date Code 1 7.00 MAX 10 Mixer IF Output GND Bypass (RF IN) RF IN NC NC NC VCC IF OUT 1 IF OUT 2 11. SW - IF Amp Switch 12. VCC 13. OSC OUT 14. GND 15. OSC Collector 1 16. OSC Base 2 17. OSC Base 1 18. OSC Collector 2 19. GND 20. Bypass (Mixer IF OUT) 6.4±0.2 4.4±0.1 1.0 NC = No Connection 1.5 ±0.1 +0.10 0.15- 0.05 1.8 MAX +0.10 0.22 - 0.05 0.5±0.2 0.65 0.575 MAX All dimensions are typical unless otherwise specified. Lead Material: Alloy 42 Lead Plating: Lead Tin Alloy ORDERING INFORMATION PART NUMBER QUANTITY UPC2734GR-E1 2500/Reel Note: Embossed Tape, 12 mm wide. Pins 1 through 10 are in tape pull-out direction. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -11/97 DATA SUBJECT TO CHANGE WITHOUT NOTICE