SSF10N90F1
Main Product Characteristics:
VDSS
900V
RDS(on)
0.85Ω(typ.)
ID
10A ①
Marking and pin
TO-3P
Assignment
Features and Benefits:
Schematic diagram
Advanced MOSFET process technology
Low On Resistance
Low Gate Charge
Fast switching and reverse body recovery
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25℃
Continuous Drain Current, VGS @ 10V
ID @ TC = 100℃
Continuous Drain Current, VGS @ 10V ①
7
IDM
Pulsed Drain Current ②
40
Power Dissipation ③
170
W
Linear Derating Factor
1.36
W/℃
VDS
Drain-Source Voltage
900
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=20mH
300
mJ
IAS
Avalanche Current @ L=20mH
5.5
A
-55 to +150
℃
PD @TC = 25℃
TJ
TSTG
10
①
Operating Junction and Storage Temperature Range
©Silikron Semiconductor CO., LTD.
2015.01.23
www.silikron.com
Preliminary Version: 1.0
A
page 1 of 6
SSF10N90F1
Thermal Resistance
Symbol
Characterizes
Typ.
Max.
Units
RθJC
Junction-to-case ③
—
0.73
℃/W
RθJA
Junction-to-ambient (t ≤ 10s)④
—
40
℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source breakdown voltage
900
—
—
V
VGS = 0V, ID = 250μA
RDS(on)
Static Drain-to-Source on-resistance
—
0.85
1.3
Ω
VGS=10V,ID = 4.5A
VGS(th)
Gate threshold voltage
2
—
4
V
VDS = VGS, ID = 250μA
IDSS
Drain-to-Source leakage current
—
—
1
—
—
500
IGSS
Gate-to-Source forward leakage
—
—
100
—
—
-100
Qg
Total gate charge
—
66
—
Qgs
Gate-to-Source charge
—
13
—
Qgd
Gate-to-Drain("Miller") charge
—
25
—
VGS = 10V
td(on)
Turn-on delay time
—
18
—
VGS=10V, VDS =450V,
tr
Rise time
—
28
—
td(off)
Turn-Off delay time
—
49
—
tf
Fall time
—
34
—
ID =10A
Ciss
Input capacitance
—
2956
—
VGS = 0V
Coss
Output capacitance
—
106
—
Crss
Reverse transfer capacitance
—
18
—
μA
nA
Conditions
VDS =900V,VGS = 0V
TJ = 125℃
VGS =30V
VGS = -30V
ID = 10A,
nC
nS
pF
VDS=450V,
RL=45Ω,
RGEN=4.7Ω
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
10 ①
A
—
—
40
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.5
V
IS=10A, VGS=0V
trr
Reverse Recovery Time
—
265
—
nS
TJ = 25 ℃ , IF =10A, di/dt =
Qrr
Reverse Recovery Charge
—
1.7
—
nC
100A/μs
©Silikron Semiconductor CO., LTD.
2015.01.23
www.silikron.com
Preliminary Version: 1.0
page 2 of 6
SSF10N90F1
Test circuits and Waveforms
EAS Test Circuit:
Gate charge test circuit:
Switching Time Test Circuit:
Switching Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25℃
©Silikron Semiconductor CO., LTD.
2015.01.23
www.silikron.com
Preliminary Version: 1.0
page 3 of 6
SSF10N90F1
Mechanical Data：
©Silikron Semiconductor CO., LTD.
2015.01.23
www.silikron.com
Preliminary Version: 1.0
page 4 of 6
SSF10N90F1
Ordering and Marking Information
Device Marking: SSF10N90F1
Package (Available)
TO-3P
Operating Temperature Range
C : -55 to 150 ℃
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
TO-3P
30
8
240
1200
5
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 150℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO., LTD.
2015.01.23
www.silikron.com
Preliminary Version: 1.0
page 5 of 6
SSF10N90F1
ATTENTION:
■
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Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
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Any and all information described or contained herein are subject to change without notice due to
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Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Suzhou Silikron Semiconductor Corp.
11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China
TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
©Silikron Semiconductor CO., LTD.
2015.01.23
www.silikron.com
Preliminary Version: 1.0
page 6 of 6